ページ 1236 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品

IRFC4468D

Infineon Technologies

MOSFET N-CH WAFER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫5,792

-

BSP89 E6327

Infineon Technologies

MOSFET N-CH 240V 350MA SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

在庫25,500

MOSFET (Metal Oxide)

240V

350mA (Ta)

4.5V, 10V

1.8V @ 108µA

6.4nC @ 10V

140pF @ 25V

±20V

-

1.8W (Ta)

6 Ohm @ 350mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4

TO-261-4, TO-261AA

IRF6637TR1PBF

Infineon Technologies

MOSFET N-CH 30V 14A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 14A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MP
Package / Case: DirectFET? Isometric MP

パッケージ: DirectFET? Isometric MP

在庫17,628

MOSFET (Metal Oxide)

30V

14A (Ta), 59A (Tc)

4.5V, 10V

2.35V @ 250µA

17nC @ 4.5V

1330pF @ 15V

±20V

-

2.3W (Ta), 42W (Tc)

7.7 mOhm @ 14A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

DIRECTFET? MP

DirectFET? Isometric MP

IRF7807PBF

Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫5,712

MOSFET (Metal Oxide)

30V

8.3A (Ta)

4.5V

1V @ 250µA

17nC @ 5V

-

±12V

-

2.5W (Tc)

25 mOhm @ 7A, 4.5V

-

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IRFU4105PBF

Infineon Technologies

MOSFET N-CH 55V 27A I-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫7,840

MOSFET (Metal Oxide)

55V

27A (Tc)

10V

4V @ 250µA

34nC @ 10V

700pF @ 25V

±20V

-

68W (Tc)

45 mOhm @ 16A, 10V

-55°C ~ 175°C (TJ)

Through Hole

IPAK (TO-251)

TO-251-3 Short Leads, IPak, TO-251AA

IRL3715LPBF

Infineon Technologies

MOSFET N-CH 20V 54A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫38,400

MOSFET (Metal Oxide)

20V

54A (Tc)

4.5V, 10V

3V @ 250µA

17nC @ 4.5V

1060pF @ 10V

±20V

-

3.8W (Ta), 71W (Tc)

14 mOhm @ 26A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

2N6660-E3

Vishay Siliconix

MOSFET N-CH 60V 990MA TO-205

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-205AF (TO-39)
Package / Case: TO-205AD, TO-39-3 Metal Can

パッケージ: TO-205AD, TO-39-3 Metal Can

在庫6,368

MOSFET (Metal Oxide)

60V

990mA (Tc)

5V, 10V

2V @ 1mA

-

50pF @ 25V

±20V

-

725mW (Ta), 6.25W (Tc)

3 Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-205AF (TO-39)

TO-205AD, TO-39-3 Metal Can

SI1307DL-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 0.85A SOT323-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 290mW (Ta)
Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323

パッケージ: SC-70, SOT-323

在庫155,424

MOSFET (Metal Oxide)

12V

850mA (Ta)

1.8V, 4.5V

450mV @ 250µA (Min)

5nC @ 4.5V

-

±8V

-

290mW (Ta)

290 mOhm @ 1A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SC-70-3

SC-70, SOT-323

NTD14N03R-1G

ON Semiconductor

MOSFET N-CH 25V 2.5A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫3,184

MOSFET (Metal Oxide)

25V

2.5A (Ta)

4.5V, 10V

2V @ 250µA

1.8nC @ 5V

115pF @ 20V

±20V

-

1.04W (Ta), 20.8W (Tc)

95 mOhm @ 5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

IXFX21N100Q

IXYS

MOSFET N-CH 1000V 21A PLUS 247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫103,464

MOSFET (Metal Oxide)

1000V

21A (Tc)

10V

5.5V @ 4mA

170nC @ 10V

6900pF @ 25V

±20V

-

500W (Tc)

500 mOhm @ 10.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

IXFX180N10

IXYS

MOSFET N-CH 100V 180A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫13,980

MOSFET (Metal Oxide)

100V

180A (Tc)

10V

4V @ 8mA

390nC @ 10V

10900pF @ 25V

±20V

-

560W (Tc)

8 mOhm @ 90A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247?-3

TO-247-3

FDMS86520L

Fairchild/ON Semiconductor

MOSFET N CH 60V 13.5A 8PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4615pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 13.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6), Power56
Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

在庫28,920

MOSFET (Metal Oxide)

60V

13.5A (Ta), 22A (Tc)

4.5V, 10V

3V @ 250µA

63nC @ 10V

4615pF @ 30V

±20V

-

2.5W (Ta), 69W (Tc)

8.2 mOhm @ 13.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (5x6), Power56

8-PowerTDFN

ZXMN3B14FTA

Diodes Incorporated

MOSFET N-CH 30V 2.9A SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 568pF @ 15V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫1,625,052

MOSFET (Metal Oxide)

30V

2.9A (Ta)

2.5V, 4.5V

700mV @ 250µA

6.7nC @ 4.5V

568pF @ 15V

±12V

-

1W (Ta)

80 mOhm @ 3.1A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

TO-236-3, SC-59, SOT-23-3

PSMN010-80YLX

Nexperia USA Inc.

MOSFET N-CH 80V LFPAK56

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 6506pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 194W (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669

パッケージ: SC-100, SOT-669

在庫4,400

MOSFET (Metal Oxide)

80V

84A (Tc)

5V, 10V

2.1V @ 1mA

44.2nC @ 5V

6506pF @ 25V

±20V

-

194W (Tc)

10 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK56, Power-SO8

SC-100, SOT-669

SQD90P04-9M4L_GE3

Vishay Siliconix

MOSFET P-CH 40V 90A TO252AA

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫17,118

MOSFET (Metal Oxide)

40V

90A (Tc)

4.5V, 10V

2.5V @ 250µA

155nC @ 10V

6675pF @ 20V

±20V

-

136W (Tc)

9.4 mOhm @ 17A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPak (2 Leads + Tab), SC-63

BUK762R9-40E,118

Nexperia USA Inc.

MOSFET N-CH 40V 100A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫23,418

MOSFET (Metal Oxide)

40V

100A (Tc)

10V

4V @ 1mA

79nC @ 10V

6200pF @ 25V

±20V

-

234W (Tc)

2.9 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB60R600C6

Infineon Technologies

MOSFET N-CH 600V 7.3A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫390,120

MOSFET (Metal Oxide)

600V

7.3A (Tc)

10V

3.5V @ 200µA

20.5nC @ 10V

440pF @ 100V

±20V

-

63W (Tc)

600 mOhm @ 2.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-2

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSZ058N03LS G

Infineon Technologies

MOSFET N-CH 30V 40A TSDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

在庫9,468

MOSFET (Metal Oxide)

30V

15A (Ta), 40A (Tc)

4.5V, 10V

2.2V @ 250µA

30nC @ 10V

2400pF @ 15V

±20V

-

2.1W (Ta), 45W (Tc)

5.8 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

IPD90R1K2C3ATMA1

Infineon Technologies

MOSFET N-CH 900V 5.1A TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫25,314

MOSFET (Metal Oxide)

900V

5.1A (Tc)

10V

3.5V @ 310µA

28nC @ 10V

710pF @ 100V

±20V

-

83W (Tc)

1.2 Ohm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

BUK9612-55B,118

Nexperia USA Inc.

MOSFET N-CH 55V 75A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3693pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫23,244

MOSFET (Metal Oxide)

55V

75A (Tc)

5V, 10V

2V @ 1mA

31nC @ 5V

3693pF @ 25V

±15V

-

157W (Tc)

10 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AO4294

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 11.5A 8SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫10,922,652

MOSFET (Metal Oxide)

100V

11.5A (Ta)

4.5V, 10V

2.4V @ 250µA

50nC @ 10V

2420pF @ 50V

±20V

-

3.1W (Ta)

12 mOhm @ 11.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IRFU024NPBFAKLA1

Infineon Technologies

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251AA)
Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA

パッケージ: -

在庫21,585

MOSFET (Metal Oxide)

55 V

17A (Tc)

10V

4V @ 250µA

20 nC @ 10 V

370 pF @ 25 V

±20V

-

45W (Tc)

75mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Through Hole

IPAK (TO-251AA)

TO-251-3 Short Leads, IPAK, TO-251AA

AOK040A60

Alpha & Omega Semiconductor Inc.

N

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9320 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

パッケージ: -

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MOSFET (Metal Oxide)

600 V

70A (Tc)

10V

3.6V @ 250µA

175 nC @ 10 V

9320 pF @ 100 V

±20V

-

500W (Tc)

40mOhm @ 25A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247

TO-247-3

PJQ4468AP_R2_00001

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN3333-8
Package / Case: 8-PowerVDFN

パッケージ: -

在庫14,925

MOSFET (Metal Oxide)

60 V

5A (Ta), 18A (Tc)

4.5V, 10V

2.5V @ 250µA

20 nC @ 10 V

1173 pF @ 25 V

±20V

-

2W (Ta), 24W (Tc)

34mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

DFN3333-8

8-PowerVDFN

PJQ4414P_R2_00001

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN3333-8
Package / Case: 8-PowerVDFN

パッケージ: -

在庫12,264

MOSFET (Metal Oxide)

30 V

8A (Ta), 25A (Tc)

4.5V, 10V

2.5V @ 250µA

4.3 nC @ 4.5 V

392 pF @ 25 V

±20V

-

2W (Ta), 21W (Tc)

18mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

DFN3333-8

8-PowerVDFN

AOB360A70L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 12A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

在庫2,850

MOSFET (Metal Oxide)

700 V

12A (Tc)

10V

4V @ 250µA

22.5 nC @ 10 V

1360 pF @ 100 V

±20V

-

156W (Tc)

360mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

CPH3337-T-TL-E

onsemi

PCH 2.5V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

RLD03N06CLESM

Harris Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-