ページ 1272 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - シングル

レコード 42,029
ページ  1,272/1,502
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRFZ24NSTRRPBF
Infineon Technologies

MOSFET N-CH 55V 17A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫9,096
MOSFET (Metal Oxide)
55V
17A (Tc)
10V
4V @ 250µA
20nC @ 10V
370pF @ 25V
±20V
-
3.8W (Ta), 45W (Tc)
70 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRL3103LPBF
Infineon Technologies

MOSFET N-CH 30V 64A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA
在庫134,064
MOSFET (Metal Oxide)
30V
64A (Tc)
4.5V, 10V
1V @ 250µA
33nC @ 4.5V
1650pF @ 25V
±16V
-
94W (Tc)
12 mOhm @ 34A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IRFR3704
Infineon Technologies

MOSFET N-CH 20V 75A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫4,240
MOSFET (Metal Oxide)
20V
75A (Tc)
10V
3V @ 250µA
19nC @ 4.5V
1996pF @ 10V
±20V
-
90W (Tc)
9.5 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
AOT11C60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 440 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫5,968
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
5V @ 250µA
42nC @ 10V
2000pF @ 100V
±30V
-
278W (Tc)
440 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP2M008A060CG
Global Power Technologies Group

MOSFET N-CH 600V 7.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫5,744
MOSFET (Metal Oxide)
600V
7.5A (Tc)
10V
5V @ 250µA
23nC @ 10V
1063pF @ 25V
±30V
-
120W (Tc)
1.2 Ohm @ 3.75A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot AO4292
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 8A 8-SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫11,162,316
MOSFET (Metal Oxide)
100V
8A (Ta)
4.5V, 10V
2.7V @ 250µA
25nC @ 10V
1190pF @ 50V
±20V
-
3.1W (Ta)
23 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SIE726DF-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 60A POLARPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK? (L)
  • Package / Case: 10-PolarPAK? (L)
パッケージ: 10-PolarPAK? (L)
在庫7,888
MOSFET (Metal Oxide)
30V
60A (Tc)
4.5V, 10V
3V @ 250µA
160nC @ 10V
7400pF @ 15V
±20V
-
5.2W (Ta), 125W (Tc)
2.4 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
10-PolarPAK? (L)
10-PolarPAK? (L)
SI7674DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
パッケージ: PowerPAK? SO-8
在庫5,136
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
3V @ 250µA
90nC @ 10V
5910pF @ 15V
±20V
-
5.4W (Ta), 83W (Tc)
3.3 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot AOD4182
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 53A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 4.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2005pF @ 40V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫22,668
MOSFET (Metal Oxide)
80V
8.5A (Ta), 53A (Tc)
7V, 10V
4.2V @ 250µA
34nC @ 10V
2005pF @ 40V
±25V
-
2.5W (Ta), 100W (Tc)
15.5 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
APT15F50K
Microsemi Corporation

MOSFET N-CH 500V 15A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 223W (Tc)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫2,352
MOSFET (Metal Oxide)
500V
15A (Tc)
-
5V @ 500µA
55nC @ 10V
2250pF @ 25V
-
-
223W (Tc)
390 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
hot NTD24N06L
ON Semiconductor

MOSFET N-CH 60V 24A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫390,000
MOSFET (Metal Oxide)
60V
24A (Ta)
5V
2V @ 250µA
32nC @ 5V
1140pF @ 25V
±15V
-
1.36W (Ta), 62.5W (Tj)
45 mOhm @ 10A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDP060AN08A0
Fairchild/ON Semiconductor

MOSFET N-CH 75V 80A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 255W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫37,092
MOSFET (Metal Oxide)
75V
16A (Ta), 80A (Tc)
6V, 10V
4V @ 250µA
95nC @ 10V
5150pF @ 25V
±20V
-
255W (Tc)
6 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
FDWS9408_F085
Fairchild/ON Semiconductor

N-CHANNEL POWER TRENCH MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tj)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫7,856
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4V @ 250µA
92nC @ 10V
-
±20V
-
214W (Tj)
1.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
hot NDF10N60ZH
ON Semiconductor

MOSFET N-CH 600V 10A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
パッケージ: TO-220-3 Full Pack
在庫36,864
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
4.5V @ 100µA
68nC @ 10V
1645pF @ 25V
±30V
-
39W (Tc)
750 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
FCPF1300N80ZYD
Fairchild/ON Semiconductor

MOSFET N-CH 800V 4A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3 (Y-Forming)
  • Package / Case: TO-220-3 Full Pack, Formed Leads
パッケージ: TO-220-3 Full Pack, Formed Leads
在庫17,796
MOSFET (Metal Oxide)
800V
4A (Tc)
10V
4.5V @ 400µA
21nC @ 10V
880pF @ 100V
±20V
-
24W (Tc)
1.3 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3 (Y-Forming)
TO-220-3 Full Pack, Formed Leads
IXFH20N85X
IXYS

850V/20A ULTRA JUNCTION X-CLASS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫6,784
MOSFET (Metal Oxide)
850V
20A (Tc)
10V
5.5V @ 2.5mA
63nC @ 10V
1660pF @ 25V
±30V
-
540W (Tc)
330 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
BSP88H6327XTSA1
Infineon Technologies

MOSFET N-CH 4SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 108µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
パッケージ: TO-261-4, TO-261AA
在庫53,856
MOSFET (Metal Oxide)
240V
350mA (Ta)
2.8V, 10V
1.4V @ 108µA
6.8nC @ 10V
95pF @ 25V
±20V
-
1.8W (Ta)
6 Ohm @ 350mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
hot IRLML6402GTRPBF
Infineon Technologies

MOSFET P-CH 20V 3.7A SOT-23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫436,980
MOSFET (Metal Oxide)
20V
3.7A (Ta)
2.5V, 4.5V
1.2V @ 250µA
12nC @ 5V
633pF @ 10V
±12V
-
1.3W (Ta)
65 mOhm @ 3.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
SIHB22N60S-GE3
Vishay Siliconix

MOSFET N-CH 600V 22A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
パッケージ: -
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MOSFET (Metal Oxide)
600 V
22A (Tc)
10V
4V @ 250µA
110 nC @ 10 V
2810 pF @ 25 V
±30V
-
250W (Tc)
190mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SISD5300DN-T1-GE3
Vishay Siliconix

N-CHANNEL 30 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Ta), 198A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5030 pF @ 15 V
  • Vgs (Max): +16V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.87mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-F
  • Package / Case: PowerPAK® 1212-F
パッケージ: -
在庫17,895
MOSFET (Metal Oxide)
30 V
62A (Ta), 198A (Tc)
4.5V, 10V
2V @ 250µA
36.2 nC @ 10 V
5030 pF @ 15 V
+16V, -12V
-
5.4W (Ta), 57W (Tc)
0.87mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-F
PowerPAK® 1212-F
AUIRF2804L-313TRL
Infineon Technologies

MOSFET N-CH 40V 195A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262-3
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
40 V
195A (Tc)
10V
4V @ 250µA
240 nC @ 10 V
6450 pF @ 25 V
±20V
-
300W (Tc)
2.3mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
SIHFR430ATRL-GE3
Vishay Siliconix

MOSFET N-CH 500V 5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
500 V
5A (Tc)
10V
4.5V @ 250µA
24 nC @ 10 V
490 pF @ 25 V
±30V
-
110W (Tc)
1.7Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
UJ3C065030K3S
Qorvo

MOSFET N-CH 650V 85A TO247-3

  • FET Type: N-Channel
  • Technology: -
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 441W (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
パッケージ: -
在庫15,087
-
650 V
85A (Tc)
12V
6V @ 10mA
51 nC @ 15 V
1500 pF @ 100 V
±25V
-
441W (Tc)
35mOhm @ 50A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TSM10N60CZ-C0G
Taiwan Semiconductor Corporation

MOSFET N-CH 600V 10A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
4V @ 250µA
45.8 nC @ 10 V
1738 pF @ 25 V
±30V
-
166W (Tc)
750mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
AON6934A_2C1
Alpha & Omega Semiconductor Inc.

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HUF75823D3S
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
150 V
14A (Tc)
10V
4V @ 250µA
54 nC @ 20 V
800 pF @ 25 V
±20V
-
85W (Tc)
150mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
UPA2723UT1A-E1-AY
Renesas Electronics Corporation

MOSFET N-CH 30V 33A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 17A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN3333 (3.3x3.3)
  • Package / Case: 8-VDFN Exposed Pad
パッケージ: -
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MOSFET (Metal Oxide)
30 V
33A (Ta)
-
2.5V @ 1mA
64 nC @ 5 V
8100 pF @ 10 V
-
-
-
2.5mOhm @ 17A, 10V
-
Surface Mount
8-DFN3333 (3.3x3.3)
8-VDFN Exposed Pad
2SJ690-T1B-AT
Renesas Electronics Corporation

MOSFET P-CH 30V 2.5A SC96-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-96-3, Thin Mini Mold
  • Package / Case: SC-96
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
5.2 nC @ 4.5 V
450 pF @ 10 V
±12V
-
200mW (Ta)
119mOhm @ 1A, 4.5V
150°C
Surface Mount
SC-96-3, Thin Mini Mold
SC-96