ページ 14 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - シングル

レコード 42,029
ページ  14/1,401
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BTS121AE3045ANTMA1
Infineon Technologies

MOSFET N CH 100V 22A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,424
MOSFET (Metal Oxide)
100V
22A (Tc)
4.5V
2.5V @ 1mA
-
1500pF @ 25V
±10V
-
95W (Tc)
100 mOhm @ 9.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-220AB
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD088N04LGBTMA1
Infineon Technologies

MOSFET N-CH 40V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 16µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫2,544
MOSFET (Metal Oxide)
40V
50A (Tc)
4.5V, 10V
2V @ 16µA
28nC @ 10V
2100pF @ 20V
±20V
-
47W (Tc)
8.8 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPB096N03LGATMA1
Infineon Technologies

MOSFET N-CH 30V 35A TO-263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫5,568
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.2V @ 250µA
15nC @ 10V
1600pF @ 15V
±20V
-
42W (Tc)
9.6 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFT1446-H
ON Semiconductor

MOSFET N-CH 60V 20A TP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 23W (Tc)
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
パッケージ: TO-251-3 Short Leads, IPak, TO-251AA
在庫2,880
MOSFET (Metal Oxide)
60V
20A (Ta)
4V, 10V
2.6V @ 1mA
16nC @ 10V
750pF @ 20V
±20V
-
1W (Ta), 23W (Tc)
51 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TP
TO-251-3 Short Leads, IPak, TO-251AA
SI7160DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 20A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 15V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
パッケージ: PowerPAK? SO-8
在庫5,840
MOSFET (Metal Oxide)
30V
20A (Tc)
4.5V, 10V
2.5V @ 250µA
66nC @ 10V
2970pF @ 15V
±16V
-
5W (Ta), 27.7W (Tc)
8.7 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
IRF9540STRR
Vishay Siliconix

MOSFET P-CH 100V 19A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫4,160
MOSFET (Metal Oxide)
100V
19A (Tc)
10V
4V @ 250µA
61nC @ 10V
1400pF @ 25V
±20V
-
3.7W (Ta), 150W (Tc)
200 mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFK20N120P
IXYS

MOSFET N-CH 1200V 20A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
パッケージ: TO-264-3, TO-264AA
在庫7,312
MOSFET (Metal Oxide)
1200V
20A (Tc)
10V
6.5V @ 1mA
193nC @ 10V
11100pF @ 25V
±30V
-
780W (Tc)
570 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
PSMN2R0-60PSRQ
Nexperia USA Inc.

MOSFET N-CH 60V TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 192nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 338W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫7,408
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 1mA
192nC @ 10V
13500pF @ 30V
±20V
-
338W (Tc)
2.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
AOW7S60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 7A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA
在庫4,064
MOSFET (Metal Oxide)
600V
7A (Tc)
10V
3.9V @ 250µA
8.2nC @ 10V
372pF @ 100V
±30V
-
104W (Tc)
600 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
hot NVMFS5832NLWFT1G
ON Semiconductor

MOSFET N-CH 40V 120A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 127W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫18,000
MOSFET (Metal Oxide)
40V
21A (Ta)
4.5V, 10V
2.4V @ 250µA
51nC @ 10V
2700pF @ 25V
±20V
-
3.7W (Ta), 127W (Tc)
4.2 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
SIHF5N50D-E3
Vishay Siliconix

MOSFET N-CH 500V 5.3A TO220 FLPK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
パッケージ: TO-220-3 Full Pack
在庫3,584
MOSFET (Metal Oxide)
500V
5.3A (Tc)
10V
5V @ 250µA
20nC @ 10V
325pF @ 100V
±30V
-
30W (Tc)
1.5 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
hot NTE4151PT1G
ON Semiconductor

MOSFET P-CH 20V 0.76A SC-89

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 313mW (Tj)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490
パッケージ: SC-89, SOT-490
在庫259,836
MOSFET (Metal Oxide)
20V
760mA (Tj)
1.8V, 4.5V
1.2V @ 250µA
2.1nC @ 4.5V
156pF @ 5V
±6V
-
313mW (Tj)
360 mOhm @ 350mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-3
SC-89, SOT-490
IPP50R500CE
Infineon Technologies

MOSFET N-CH 500V 7.6A PG-TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫7,320
MOSFET (Metal Oxide)
500V
7.6A (Tc)
13V
3.5V @ 200µA
18.7nC @ 10V
433pF @ 100V
±20V
Super Junction
-
500 mOhm @ 2.3A, 13V
-
Through Hole
PG-TO220-3-1
TO-220-3
hot IRLH6224TRPBF
Infineon Technologies

MOSFET N-CH 20V 28A PQFN 5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫11,004
MOSFET (Metal Oxide)
20V
28A (Ta), 105A (Tc)
2.5V, 4.5V
1.1V @ 50µA
86nC @ 10V
3710pF @ 10V
±12V
-
3.6W (Ta), 52W (Tc)
3 mOhm @ 20A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
STH400N4F6-6
STMicroelectronics

MOSFET N-CH 40V 180A H2PAK-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 404nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
パッケージ: TO-263-7, D2Pak (6 Leads + Tab)
在庫5,872
MOSFET (Metal Oxide)
40V
180A (Tc)
10V
4.5V @ 250µA
404nC @ 10V
20500pF @ 25V
±20V
-
300W (Tc)
1.15 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK
TO-263-7, D2Pak (6 Leads + Tab)
hot IXTQ130N10T
IXYS

MOSFET N-CH 100V 130A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
パッケージ: TO-3P-3, SC-65-3
在庫424,500
MOSFET (Metal Oxide)
100V
130A (Tc)
10V
4.5V @ 250µA
104nC @ 10V
5080pF @ 25V
±20V
-
360W (Tc)
9.1 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
hot IRLR2703TRPBF
Infineon Technologies

MOSFET N-CH 30V 23A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫112,380
MOSFET (Metal Oxide)
30V
23A (Tc)
4V, 10V
1V @ 250µA
15nC @ 4.5V
450pF @ 25V
±16V
-
45W (Tc)
45 mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF7204TRPBF
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫1,730,328
MOSFET (Metal Oxide)
20V
5.3A (Ta)
4.5V, 10V
2.5V @ 250µA
25nC @ 10V
860pF @ 10V
±12V
-
2.5W (Tc)
60 mOhm @ 5.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SPP80N06S209
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 125µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
55 V
80A (Tc)
10V
4V @ 125µA
80 nC @ 10 V
3140 pF @ 25 V
±20V
-
190W (Tc)
9.1mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
RJK0390DPA-00-J53
Renesas Electronics Corporation

MOSFET N-CH 30V 65A 8WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
30 V
65A (Ta)
-
-
54 nC @ 4.5 V
8900 pF @ 10 V
-
-
60W (Tc)
2.2mOhm @ 32.5A, 10V
-
Surface Mount
8-WPAK
8-PowerWDFN
PMXB65ENE-147
NXP

NOW NEXPERIA PMXB65ENE - SMALL S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1010D-3
  • Package / Case: 3-XDFN Exposed Pad
パッケージ: -
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MOSFET (Metal Oxide)
30 V
3.2A (Ta)
4.5V, 10V
2.5V @ 250µA
11 nC @ 10 V
295 pF @ 15 V
±20V
-
400mW (Ta), 8.33W (Tc)
67mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1010D-3
3-XDFN Exposed Pad
AON7442
Alpha & Omega Semiconductor Inc.

MOSFET N-CHANNEL 30V 50A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2994 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN-EP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
パッケージ: -
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MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
2.2V @ 250µA
65 nC @ 10 V
2994 pF @ 15 V
±20V
-
83W (Tc)
1.9mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3.3x3.3)
8-PowerWDFN
NTMJS1D3N04CTWG
onsemi

MOSFET N-CH 40V 41A/235A 8LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-LFPAK
  • Package / Case: SOT-1205, 8-LFPAK56
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
40 V
41A (Ta), 235A (Tc)
10V
3.5V @ 170µA
65 nC @ 10 V
4300 pF @ 25 V
±20V
-
3.8W (Ta), 128W (Tc)
1.3mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-LFPAK
SOT-1205, 8-LFPAK56
DMN3016LFDFQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V U-DFN2020-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 730mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
パッケージ: -
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MOSFET (Metal Oxide)
30 V
10A (Ta)
4.5V, 10V
2V @ 250µA
25.1 nC @ 10 V
1415 pF @ 15 V
±20V
-
730mW (Ta)
12mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
CDM4-650-TR13-PBFREE
Central Semiconductor Corp

MOSFET N-CH 650V 4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V
  • Vgs (Max): 30V
  • FET Feature: -
  • Power Dissipation (Max): 620mW (Ta), 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫5,433
MOSFET (Metal Oxide)
650 V
4A (Ta)
10V
4V @ 250µA
11.4 nC @ 10 V
463 pF @ 25 V
30V
-
620mW (Ta), 77W (Tc)
2.7Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
RF4P060BGTCR
Rohm Semiconductor

NCH 100V 6A, HUML2020L8, POWER M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020-8S
  • Package / Case: 8-PowerUDFN
パッケージ: -
在庫9,000
MOSFET (Metal Oxide)
100 V
6A (Ta)
4.5V, 10V
2.5V @ 1mA
6.7 nC @ 10 V
305 pF @ 50 V
±20V
-
2W (Ta)
53mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
DFN2020-8S
8-PowerUDFN
DMP4026SFGQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
40 V
28A (Tc)
4.5V, 10V
1.8V @ 250µA
48 nC @ 10 V
2275 pF @ 20 V
±20V
-
2.6W (Ta), 33W (Tc)
25mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
IRF843
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: -
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MOSFET (Metal Oxide)
450 V
7A (Tc)
10V
4V @ 250µA
63 nC @ 10 V
1225 pF @ 25 V
±20V
-
125W (Tc)
1.1Ohm @ 4.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
PJD2NA60_R2_00001
Panjit International Inc.

600V N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 257 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
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MOSFET (Metal Oxide)
600 V
2A (Ta)
10V
4V @ 250µA
5.7 nC @ 10 V
257 pF @ 25 V
±30V
-
-
4.4Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
NVMFS5C670NLWFAFT3G
onsemi

MOSFET N-CH 60V 17A/71A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 53µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
パッケージ: -
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MOSFET (Metal Oxide)
60 V
17A (Ta), 71A (Tc)
4.5V, 10V
2V @ 53µA
20 nC @ 10 V
1400 pF @ 25 V
±20V
-
61W (Tc)
6.1mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads