ページ 1442 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品

IRF7702GTRPBF

Infineon Technologies

MOSFET P-CH 12V 8A 8-TSSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫7,216

MOSFET (Metal Oxide)

12V

8A (Ta)

1.8V, 4.5V

1.2V @ 250µA

81nC @ 4.5V

3470pF @ 10V

±8V

-

1.5W (Ta)

14 mOhm @ 8A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP

8-TSSOP (0.173", 4.40mm Width)

IRF6622TRPBF

Infineon Technologies

MOSFET N-CH 25V 15A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 13V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 15A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? SQ
Package / Case: DirectFET? Isometric SQ

パッケージ: DirectFET? Isometric SQ

在庫15,072

MOSFET (Metal Oxide)

25V

15A (Ta), 59A (Tc)

4.5V, 10V

2.35V @ 25µA

17nC @ 4.5V

1450pF @ 13V

±20V

-

2.2W (Ta), 34W (Tc)

6.3 mOhm @ 15A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

DIRECTFET? SQ

DirectFET? Isometric SQ

IRFR3706TRPBF

Infineon Technologies

MOSFET N-CH 20V 75A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫2,176

MOSFET (Metal Oxide)

20V

75A (Tc)

2.8V, 10V

2V @ 250µA

35nC @ 4.5V

2410pF @ 10V

±12V

-

88W (Tc)

9 mOhm @ 15A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7426TR

Infineon Technologies

MOSFET N-CH 20V 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫5,408

MOSFET (Metal Oxide)

20V

-

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

BUK9C5R3-100EJ

NXP

MOSFET N-CH 100V D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

パッケージ: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

在庫2,528

MOSFET (Metal Oxide)

100V

-

Surface Mount

D2PAK-7

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

AO4722

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 8.5A 8SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫251,652

MOSFET (Metal Oxide)

30V

8.5A (Ta)

4.5V, 10V

2.5V @ 250µA

20nC @ 10V

1100pF @ 15V

±20V

Schottky Diode (Body)

1.7W (Ta)

14 mOhm @ 11.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

SI7848DP-T1-E3

Vishay Siliconix

MOSFET N-CH 40V 10.4A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.83W (Ta)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

パッケージ: PowerPAK? SO-8

在庫408,576

MOSFET (Metal Oxide)

40V

10.4A (Ta)

4.5V, 10V

3V @ 250µA

28nC @ 5V

-

±20V

-

1.83W (Ta)

9 mOhm @ 14A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8

BSS138LT3

ON Semiconductor

MOSFET N-CH 50V 200MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫6,128

MOSFET (Metal Oxide)

50V

200mA (Ta)

5V

1.5V @ 1mA

-

50pF @ 25V

±20V

-

225mW (Ta)

3.5 Ohm @ 200mA, 5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

IRF640L

Vishay Siliconix

MOSFET N-CH 200V 18A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫9,672

MOSFET (Metal Oxide)

200V

18A (Tc)

10V

4V @ 250µA

70nC @ 10V

1300pF @ 25V

±20V

-

3.1W (Ta), 130W (Tc)

180 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I2PAK

TO-262-3 Long Leads, I2Pak, TO-262AA

SPD08N50C3

Infineon Technologies

MOSFET N-CH 560V 7.6A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫745,380

MOSFET (Metal Oxide)

560V

7.6A (Tc)

10V

3.9V @ 350µA

32nC @ 10V

750pF @ 25V

±20V

-

83W (Tc)

600 mOhm @ 4.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

NTD4808N-1G

ON Semiconductor

MOSFET N-CH 30V 9.8A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1538pF @ 12V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.4W (Ta), 54.6W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫84,732

MOSFET (Metal Oxide)

30V

10A (Ta), 63A (Tc)

4.5V, 11.5V

2.5V @ 250µA

13nC @ 4.5V

1538pF @ 12V

±20V

-

1.4W (Ta), 54.6W (Tc)

8 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

DMP6180SK3Q-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V TO252

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 984.7pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫7,344

MOSFET (Metal Oxide)

60V

14A (Tc)

4.5V, 10V

2.7V @ 250µA

17.1nC @ 10V

984.7pF @ 30V

±20V

-

2.7W (Ta)

110 mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252, (D-Pak)

TO-252-3, DPak (2 Leads + Tab), SC-63

STU13N60M2

STMicroelectronics

MOSFET N-CH 600V 11A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫3,120

MOSFET (Metal Oxide)

600V

11A (Tc)

10V

4V @ 250µA

17nC @ 10V

580pF @ 100V

±25V

-

110W (Tc)

380 mOhm @ 5.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

IPAK (TO-251)

TO-251-3 Short Leads, IPak, TO-251AA

SUM90P10-19L-E3

Vishay Siliconix

MOSFET P-CH 100V 90A D2PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 326nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫85,944

MOSFET (Metal Oxide)

100V

90A (Tc)

4.5V, 10V

3V @ 250µA

326nC @ 10V

11100pF @ 50V

±20V

-

13.6W (Ta), 375W (Tc)

19 mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2Pak)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPW11N60C3

Infineon Technologies

MOSFET N-CH 650V 11A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫99,624

MOSFET (Metal Oxide)

650V

11A (Tc)

10V

3.9V @ 500µA

60nC @ 10V

1200pF @ 25V

±20V

-

125W (Tc)

380 mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPP147N12N3 G

Infineon Technologies

MOSFET N-CH 120V 56A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 60V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 56A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫6,744

MOSFET (Metal Oxide)

120V

56A (Ta)

10V

4V @ 61µA

49nC @ 10V

3220pF @ 60V

±20V

-

107W (Tc)

14.7 mOhm @ 56A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

DMP2070UCB6-7

Diodes Incorporated

MOSFET P-CH 20V 2.5A U-WLB1510-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 920mW (Ta)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-WLB1510-6
Package / Case: 6-UFBGA, WLBGA

パッケージ: 6-UFBGA, WLBGA

在庫1,080,000

MOSFET (Metal Oxide)

20V

2.5A (Ta)

1.5V, 4.5V

1V @ 250µA

2.9nC @ 4.5V

210pF @ 10V

±8V

-

920mW (Ta)

70 mOhm @ 1A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

U-WLB1510-6

6-UFBGA, WLBGA

SI4186DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 35.8A 8SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫5,072

MOSFET (Metal Oxide)

20V

35.8A (Tc)

4.5V, 10V

2.4V @ 250µA

90nC @ 10V

3630pF @ 10V

±20V

-

3W (Ta), 6W (Tc)

2.6 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

JANSR2N7593U3

Microchip Technology

RH MOSFET _ U3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U3 (SMD-0.5)
Package / Case: 3-SMD, No Lead

パッケージ: -

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MOSFET (Metal Oxide)

250 V

12.4A (Tc)

12V

4V @ 1mA

50 nC @ 12 V

-

±20V

-

75W (Tc)

210mOhm @ 7.8A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

U3 (SMD-0.5)

3-SMD, No Lead

2SK2596BXTL-E

Renesas Electronics Corporation

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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S2N7002ET1G

onsemi

SMALL SIGNAL MOSFET 60V 310MA 2.

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300mW (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

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MOSFET (Metal Oxide)

60 V

260mA (Ta)

4.5V, 10V

2.5V @ 250µA

0.81 nC @ 5 V

40 pF @ 25 V

±20V

-

300mW (Tj)

2.5Ohm @ 240mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

WI61195TR

Wise-Integration

POWER GAN IC 8X8 PDFN

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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在庫7,500

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NVTFS002N04CTAG

onsemi

MOSFET N-CH 40V 27A/136A 8WDFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 136A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN

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MOSFET (Metal Oxide)

40 V

27A (Ta), 136A (Tc)

10V

3.5V @ 90µA

34 nC @ 10 V

2250 pF @ 25 V

±20V

-

3.2W (Ta), 85W (Tc)

2.4mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-WDFN (3.3x3.3)

8-PowerWDFN

MMBT7002K-AQ

Diotec Semiconductor

MOSFET N-CH 60V 300MA SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

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在庫2,985

MOSFET (Metal Oxide)

60 V

300mA (Ta)

4.5V, 10V

2.5V @ 250µA

-

50 pF @ 25 V

±20V

-

350mW (Ta)

3Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

SIHP30N60AEL-GE3

Vishay Siliconix

MOSFET N-CH 600V 28A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

600 V

28A (Tc)

10V

4V @ 250µA

120 nC @ 10 V

2565 pF @ 100 V

±30V

-

250W (Tc)

120mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

HUF76129D3S

Fairchild Semiconductor

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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MOSFET (Metal Oxide)

30 V

20A (Tc)

4.5V, 10V

3V @ 250µA

46 nC @ 10 V

1425 pF @ 25 V

±20V

-

105W (Tc)

16mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252 (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

SI2333CDS-T1-BE3

Vishay Siliconix

P-CHANNEL 12-V (D-S) MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

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MOSFET (Metal Oxide)

12 V

5.1A (Ta), 7.1A (Tc)

1.8V, 4.5V

1V @ 250µA

25 nC @ 4.5 V

1225 pF @ 6 V

±8V

-

1.25W (Ta), 2.5W (Tc)

35mOhm @ 5.1A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

3SK298ZP-TL-E

Renesas Electronics Corporation

SMALL SIGNAL N-CHANNEL MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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