画像 |
部品番号 |
メーカ |
説明 |
パッケージ |
在庫 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫2,496 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | - | 230W (Tc) | 3.1 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫7,440 |
|
MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | ±30V | - | 200W (Tc) | 45 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 6TSOT
|
パッケージ: - |
在庫4,208 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 8.5A 8-SOIC
|
パッケージ: 8-SOIC (0.154", 3.90mm Width) |
在庫15,132 |
|
MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 2.5V, 10V | 1.5V @ 250µA | 12nC @ 4.5V | 1100pF @ 15V | ±12V | - | 3.1W (Ta) | 24 mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Microsemi Corporation |
MOSFET P-CH 100V 11A
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パッケージ: TO-204AA, TO-3 |
在庫2,544 |
|
MOSFET (Metal Oxide) | 100V | 11A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 360 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
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NXP |
MOSFET N-CH 25V 33A LFPAK
|
パッケージ: SC-100, SOT-669 |
在庫6,288 |
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MOSFET (Metal Oxide) | 25V | 33A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 8.3nC @ 10V | 528pF @ 12V | ±20V | - | 26W (Tc) | 12.6 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON
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パッケージ: 8-VDFN Exposed Pad |
在庫3,584 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | ±20V | - | 700mW (Ta), 22W (Tc) | 16.9 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 25V 23A D2PAK
|
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫3,552 |
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MOSFET (Metal Oxide) | 25V | 23A (Ta) | 4.5V, 10V | 2V @ 250µA | 3.76nC @ 4.5V | 225pF @ 20V | ±20V | - | 37.5W (Tj) | 45 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 30V 12A 8-SOIC
|
パッケージ: 8-SOIC (0.154", 3.90mm Width) |
在庫933,288 |
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MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 1V @ 250µA | 50nC @ 4.5V | 2400pF @ 25V | ±16V | - | 2.5W (Ta) | 9 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH TO252-3
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パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫3,872 |
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MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 4.5V @ 345µA | 32nC @ 10V | 870pF @ 100V | ±20V | - | 83.3W (Tc) | 420 mOhm @ 3.4A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TO251-3
|
パッケージ: TO-251-3 Stub Leads, IPak |
在庫3,312 |
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MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 15nC @ 10V | 1600pF @ 15V | ±20V | - | 42W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 20V 7A MCPH6
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パッケージ: 6-SMD, Flat Leads |
在庫69,000 |
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MOSFET (Metal Oxide) | 20V | 7A (Ta) | 1.8V, 4.5V | - | 8.4nC @ 4.5V | 660pF @ 10V | ±12V | - | 1.5W (Ta) | 24 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 30V 2.5A CPH3
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パッケージ: TO-236-3, SC-59, SOT-23-3 |
在庫4,544 |
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MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 2.6V @ 1mA | 3.9nC @ 10V | 172pF @ 10V | ±20V | - | 1W (Ta) | 156 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 950V 12A TO220
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パッケージ: TO-220-3 |
在庫4,112 |
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MOSFET (Metal Oxide) | 950V | 12A (Tc) | 10V | 5V @ 100µA | 40nC @ 10V | 900pF @ 100V | ±30V | - | 170W (Tc) | 500 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT
|
パッケージ: 8-PowerVDFN |
在庫3,120 |
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MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 250µA | 67nC @ 10V | 5600pF @ 25V | ±20V | - | 188W (Tc) | 1.1 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO263-3
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パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫390,000 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | ±20V | - | 79W (Tc) | 8.1 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 15A 8SOIC
|
パッケージ: 8-SOIC (0.154", 3.90mm Width) |
在庫1,027,488 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 67nC @ 10V | 2525pF @ 15V | ±20V | - | 2.5W (Ta) | 6 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 200MA SC89-3
|
パッケージ: SC-89, SOT-490 |
在庫463,188 |
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MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | 0.75nC @ 4.5V | - | ±6V | - | 300mW (Ta) | 5 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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STMicroelectronics |
MOSFET N-CH 800V 9A TO-220FP
|
パッケージ: TO-220-3 Full Pack |
在庫4,464 |
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MOSFET (Metal Oxide) | 800V | 9A (Tc) | 10V | 5V @ 100µA | 22nC @ 10V | 635pF @ 100V | ±30V | - | 30W (Tc) | 600 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Nexperia USA Inc. |
PSMN2R0-55YLH/SOT1023/4 LEADS
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パッケージ: - |
在庫57,702 |
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MOSFET (Metal Oxide) | 55 V | 200A (Ta) | 4.5V, 10V | 2.2V @ 1mA | 184 nC @ 10 V | 11353 pF @ 27 V | ±20V | - | 333W (Ta) | 2.1mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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STMicroelectronics |
HIP247 IN LINE
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パッケージ: - |
在庫1,707 |
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SiCFET (Silicon Carbide) | 1700 V | 7A (Tc) | 20V | 3.5V @ 1mA | 13.3 nC @ 20 V | 133 pF @ 1000 V | +22V, -10V | - | 96W (Tc) | 1.3Ohm @ 3A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
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onsemi |
MOSFET N-CH 60V 9.9A/50A TO252AA
|
パッケージ: - |
在庫9,813 |
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MOSFET (Metal Oxide) | 60 V | 9.9A (Ta), 50A (Tc) | 6V, 10V | 4V @ 250µA | 29 nC @ 10 V | 1350 pF @ 25 V | ±20V | - | 115W (Tc) | 13.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Nuvoton Technology Corporation |
SINGLE NCH MOSFET 12V, 3.4A, 27M
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 3.4A (Ta) | 1.5V, 4.5V | 1V @ 236µA | 5.8 nC @ 4.5 V | 275 pF @ 10 V | ±8V | - | 360mW (Ta) | 30mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | 4-CSP (0.8x0.8) | 4-XFLGA, CSP |
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Infineon Technologies |
MOSFET N-CH 600V 31A TO263-3
|
パッケージ: - |
在庫3,063 |
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MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 4.5V @ 760µA | 67 nC @ 10 V | 2721 pF @ 400 V | ±20V | - | 156W (Tc) | 70mOhm @ 15.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
N-CHANNEL 20-V (D-S) MOSFET
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 6.2A (Ta), 7.9A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 18 nC @ 8 V | 666 pF @ 10 V | ±8V | - | 1.7W (Ta), 2.7W (Tc) | 28mOhm @ 5.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
650V DTMOS6 HSD 42MOHM TO-247
|
パッケージ: - |
在庫630 |
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MOSFET (Metal Oxide) | 650 V | 55A (Ta) | 10V | 4.5V @ 2.85mA | 105 nC @ 10 V | 6280 pF @ 300 V | ±30V | - | 360W (Tc) | 42mOhm @ 27.5A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
TRENCH >=100V
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 17A (Tc) | 10V | 4.9V @ 50µA | 20 nC @ 10 V | 800 pF @ 50 V | ±20V | - | 80W (Tj) | 95mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ANBON SEMICONDUCTOR (INT'L) LIMITED |
N-CHANNEL SILICON CARBIDE POWER
|
パッケージ: - |
在庫150 |
|
SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 4V @ 10mA | 142 nC @ 20 V | 2946 pF @ 1000 V | +25V, -10V | - | 330W (Tc) | 55mOhm @ 40A, 20V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |