ページ 329 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品 | Heisener Electronics
連絡先
SalesDept@heisener.com 86-755-83210559-817
ログイン/登録
Language Translation

* Please refer to the English Version as our Official Version.

BOM
カート 0

トランジスタ - FET、MOSFET - シングル

レコード 42,029
ページ  329/1,401
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IPD16CN10N G
Infineon Technologies

MOSFET N-CH 100V 53A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 61µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 53A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫529,956
MOSFET (Metal Oxide)
100V
53A (Tc)
10V
4V @ 61µA
48nC @ 10V
3220pF @ 50V
±20V
-
100W (Tc)
16 mOhm @ 53A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SPB80N08S2L-07
Infineon Technologies

MOSFET N-CH 75V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 233nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 67A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫14,460
MOSFET (Metal Oxide)
75V
80A (Tc)
4.5V, 10V
2V @ 250µA
233nC @ 10V
6820pF @ 25V
±20V
-
300W (Tc)
6.8 mOhm @ 67A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRLL014NTR
Infineon Technologies

MOSFET N-CH 55V 2A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
パッケージ: TO-261-4, TO-261AA
在庫10,500
MOSFET (Metal Oxide)
55V
2A (Ta)
4V, 10V
2V @ 250µA
14nC @ 10V
230pF @ 25V
±16V
-
1W (Ta)
140 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
SI4446DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 3.9A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫6,384
MOSFET (Metal Oxide)
40V
3.9A (Ta)
4.5V, 10V
1.6V @ 250µA
12nC @ 4.5V
700pF @ 20V
±12V
-
1.1W (Ta)
40 mOhm @ 5.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IXFN48N50U3
IXYS

MOSFET N-CH 500V 48A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 48A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
パッケージ: SOT-227-4, miniBLOC
在庫7,632
MOSFET (Metal Oxide)
500V
48A
10V
4V @ 8mA
270nC @ 10V
8400pF @ 25V
±20V
-
520W (Tc)
100 mOhm @ 500mA, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
hot IXTA152N085T7
IXYS

MOSFET N-CH 85V 152A TO-263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7 (IXTA..7)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
パッケージ: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
在庫4,512
MOSFET (Metal Oxide)
85V
152A (Tc)
10V
4V @ 250µA
114nC @ 10V
5500pF @ 25V
±20V
-
360W (Tc)
7 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7 (IXTA..7)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FQU4N50TU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 2.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
パッケージ: TO-251-3 Short Leads, IPak, TO-251AA
在庫6,000
MOSFET (Metal Oxide)
500V
2.6A (Tc)
10V
5V @ 250µA
13nC @ 10V
460pF @ 25V
±30V
-
2.5W (Ta), 45W (Tc)
2.7 Ohm @ 1.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot FDU3706
Fairchild/ON Semiconductor

MOSFET N-CH 20V 14.7A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1882pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 16.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
パッケージ: TO-251-3 Short Leads, IPak, TO-251AA
在庫121,212
MOSFET (Metal Oxide)
20V
14.7A (Ta), 50A (Tc)
2.5V, 10V
1.5V @ 250µA
23nC @ 4.5V
1882pF @ 10V
±12V
-
3.8W (Ta), 44W (Tc)
9 mOhm @ 16.2A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
hot STP5N95K3
STMicroelectronics

MOSFET N-CH 950V 4A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫390,000
MOSFET (Metal Oxide)
950V
4A (Tc)
10V
5V @ 100µA
19nC @ 10V
460pF @ 25V
±30V
-
90W (Tc)
3.5 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
AUIRFB4410
Infineon Technologies

MOSFET N-CH 100V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫3,136
MOSFET (Metal Oxide)
100V
75A (Tc)
10V
4V @ 150µA
180nC @ 10V
5150pF @ 50V
±20V
-
200W (Tc)
10 mOhm @ 58A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
AUIRFR8401TRL
Infineon Technologies

MOSFET N-CH 40V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.25 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫3,920
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
3.9V @ 50µA
63nC @ 10V
2200pF @ 25V
±20V
-
79W (Tc)
4.25 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IXTH6N80A
IXYS

MOSFET N-CH 800V 6A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫7,920
MOSFET (Metal Oxide)
800V
6A (Tc)
10V
4.5V @ 250µA
130nC @ 10V
2800pF @ 25V
±20V
-
180W (Tc)
1.4 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXFH96N20P
IXYS

MOSFET N-CH 200V 96A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫3,680
MOSFET (Metal Oxide)
200V
96A (Tc)
10V
5V @ 4mA
145nC @ 10V
4800pF @ 25V
±20V
-
600W (Tc)
24 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot FCH104N60F
Fairchild/ON Semiconductor

MOSFET N-CH 600V 37A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫106,548
MOSFET (Metal Oxide)
600V
37A (Tc)
10V
5V @ 250µA
139nC @ 10V
5950pF @ 100V
±20V
-
357W (Tc)
104 mOhm @ 18.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
TK10A80E,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 800V TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
パッケージ: TO-220-3 Full Pack, Isolated Tab
在庫4,784
MOSFET (Metal Oxide)
800V
10A (Ta)
10V
4V @ 1mA
46nC @ 10V
2000pF @ 25V
±30V
-
50W (Tc)
1 Ohm @ 5A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack, Isolated Tab
BSZ240N12NS3 G
Infineon Technologies

MOSFET N-CH 120V 37A TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 60V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫2,656
MOSFET (Metal Oxide)
120V
37A (Tc)
10V
4V @ 35µA
27nC @ 10V
1900pF @ 60V
±20V
-
66W (Tc)
24 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
FCP165N60E
Fairchild/ON Semiconductor

MOSFET N-CH 600V 23A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2434pF @ 380V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫21,192
MOSFET (Metal Oxide)
600V
23A (Tc)
10V
3.5V @ 250µA
75nC @ 10V
2434pF @ 380V
±20V
-
227W (Tc)
165 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GSFC02501
Good-Ark Semiconductor

MOSFET, P-CHANNEL, -25V, -0.85A,

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 690mW (Ta)
  • Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
パッケージ: -
在庫15,099
MOSFET (Metal Oxide)
25 V
850mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.8 nC @ 4.5 V
58 pF @ 10 V
±8V
-
690mW (Ta)
640mOhm @ 550mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
PSMNR90-40SSHJ
Nexperia USA Inc.

MOSFET N-CH 40V 375A LFPAK88

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 375A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 375W (Ta)
  • Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK88 (SOT1235)
  • Package / Case: SOT-1235
パッケージ: -
在庫6
MOSFET (Metal Oxide)
40 V
375A (Ta)
10V
3.6V @ 1mA
166 nC @ 10 V
12888 pF @ 25 V
±20V
Schottky Diode (Body)
375W (Ta)
0.9mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK88 (SOT1235)
SOT-1235
GSFA10200
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 200.00A, 1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10430 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
パッケージ: -
在庫969
MOSFET (Metal Oxide)
100 V
200A (Tc)
10V
3.9V @ 250µA
165 nC @ 10 V
10430 pF @ 50 V
±20V
-
400W (Tc)
2.7mOhm @ 60A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
IXRFSM12N100
IXYS-RF

MOSFET N-CH 1000V 12A 16SMPD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 800 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 940W
  • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 16-SMPD
  • Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
12A (Tc)
15V
5.5V @ 250µA
77 nC @ 10 V
2875 pF @ 800 V
±20V
-
940W
1.05Ohm @ 6A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
16-SMPD
16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
SQJQ186ER-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 80 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 329A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10552 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: 8-PowerSMD, Gull Wing
パッケージ: -
在庫5,958
MOSFET (Metal Oxide)
80 V
329A (Tc)
10V
3.5V @ 250µA
185 nC @ 10 V
10552 pF @ 25 V
±20V
-
600W (Tc)
2.3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerSMD, Gull Wing
TSM70N900CH
Taiwan Semiconductor Corporation

700V, 4.5A, SINGLE N-CHANNEL POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
700 V
4.5A (Tc)
10V
4V @ 250µA
9.7 nC @ 10 V
482 pF @ 100 V
±30V
-
50W (Tc)
900mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPAK, TO-251AA
SQ7414AEN-T1_BE3
Vishay Siliconix

MOSFET N-CH 60V 5.6A PPAK 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 5.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
60 V
16A (Tc)
4.5V, 10V
2.5V @ 250µA
24 nC @ 10 V
980 pF @ 30 V
±20V
-
62W (Tc)
26mOhm @ 5.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
DMP2077UCA3-7
Diodes Incorporated

MOSFET P-CH 20V 4A X4-DSN1006-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 8V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.34 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 660mW
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X4-DSN1006-3
  • Package / Case: 3-XFDFN
パッケージ: -
在庫23,700
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 8V
1V @ 250µA
1.34 nC @ 4.5 V
143 pF @ 10 V
±12V
-
660mW
78mOhm @ 500mA, 8V
-55°C ~ 150°C (TJ)
Surface Mount
X4-DSN1006-3
3-XFDFN
SIHG22N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 19A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
パッケージ: -
在庫876
MOSFET (Metal Oxide)
600 V
19A (Tc)
10V
4V @ 250µA
96 nC @ 10 V
1423 pF @ 100 V
±30V
-
179W (Tc)
182mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIDR510EP-T1-RE3
Vishay Siliconix

N-CHANNEL 100 V (D-S) 175C MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 148A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8
パッケージ: -
在庫17,940
MOSFET (Metal Oxide)
100 V
33A (Ta), 148A (Tc)
7.5V, 10V
4V @ 250µA
81 nC @ 10 V
4980 pF @ 50 V
±20V
-
7.5W (Ta), 150W (Tc)
3.6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8DC
PowerPAK® SO-8
NVTYS002N03CLTWG
onsemi

T6 30V N-CH LL IN LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2697 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.25mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-LFPAK
  • Package / Case: SOT-1205, 8-LFPAK56
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
30 V
29A (Ta), 140A (Tc)
4.5V, 10V
2.2V @ 250µA
37 nC @ 10 V
2697 pF @ 15 V
±20V
-
3.2W (Ta), 75W (Tc)
2.25mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-LFPAK
SOT-1205, 8-LFPAK56
RF1S25N06SM
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
60 V
25A
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PSMN8R9-100BSEJ
Nexperia USA Inc.

MOSFET N-CH 100V 108A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9488 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 296W (Ta)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 1V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
100 V
75A (Ta)
10V
4V @ 1mA
160 nC @ 10 V
9488 pF @ 50 V
±20V
-
296W (Ta)
10mOhm @ 25A, 1V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB