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IRF3315STRRPBF

Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫72,924

MOSFET (Metal Oxide)

150V

21A (Tc)

10V

4V @ 250µA

95nC @ 10V

1300pF @ 25V

±20V

-

3.8W (Ta), 94W (Tc)

82 mOhm @ 12A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7421D1PBF

Infineon Technologies

MOSFET N-CH 30V 5.8A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,792

MOSFET (Metal Oxide)

30V

5.8A (Ta)

4.5V, 10V

1V @ 250µA

27nC @ 10V

510pF @ 25V

±20V

Schottky Diode (Isolated)

2W (Ta)

35 mOhm @ 4.1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IRF9520NS

Infineon Technologies

MOSFET P-CH 100V 6.8A D2PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫460,788

MOSFET (Metal Oxide)

100V

6.8A (Tc)

10V

4V @ 250µA

27nC @ 10V

350pF @ 25V

±20V

-

3.8W (Ta), 48W (Tc)

480 mOhm @ 4A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AO3415_108

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V SOT23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫3,312

-

IXFN260N17T

IXYS

MOSFET N-CH 170V 245A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 170V
Current - Continuous Drain (Id) @ 25°C: 245A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1090W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

在庫7,296

MOSFET (Metal Oxide)

170V

245A

10V

5V @ 8mA

400nC @ 10V

24000pF @ 25V

±20V

-

1090W (Tc)

6.5 mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

FQPF13N10

Fairchild/ON Semiconductor

MOSFET N-CH 100V 8.7A TO-220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 4.35A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫6,064

MOSFET (Metal Oxide)

100V

8.7A (Tc)

10V

4V @ 250µA

16nC @ 10V

450pF @ 25V

±25V

-

30W (Tc)

180 mOhm @ 4.35A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

IXTQ50N20P

IXYS

MOSFET N-CH 200V 50A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

在庫3,520

MOSFET (Metal Oxide)

200V

50A (Tc)

10V

5V @ 250µA

70nC @ 10V

2720pF @ 25V

±20V

-

360W (Tc)

60 mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

AOW15S60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 15A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫4,368

MOSFET (Metal Oxide)

600V

15A (Tc)

10V

3.8V @ 250µA

15.6nC @ 10V

717pF @ 100V

±30V

-

208W (Tc)

290 mOhm @ 7.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

MCQ9435-TP

Micro Commercial Co

P-CHANNEL MOSFET, SOP-8 PACKAGE

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫3,504

MOSFET (Metal Oxide)

30V

5.1A

10V

2V @ 250µA

40nC @ 10V

-

±20V

-

1.4W

105 mOhm @ 2A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOP

8-SOIC (0.154", 3.90mm Width)

STE40NC60

STMicroelectronics

MOSFET N-CH 600V 40A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 20A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP?
Package / Case: ISOTOP

パッケージ: ISOTOP

在庫6,660

MOSFET (Metal Oxide)

600V

40A

10V

4V @ 250µA

430nC @ 10V

11100pF @ 25V

±30V

-

460W (Tc)

130 mOhm @ 20A, 10V

150°C (TJ)

Chassis Mount

ISOTOP?

ISOTOP

BUK9Y153-100E,115

Nexperia USA Inc.

MOSFET N-CH 100V 9.4A LFPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 146 mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669

パッケージ: SC-100, SOT-669

在庫38,736

MOSFET (Metal Oxide)

100V

9.4A (Tc)

5V

2.1V @ 1mA

6.8nC @ 5V

716pF @ 25V

±10V

-

37W (Tc)

146 mOhm @ 2A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK56, Power-SO8

SC-100, SOT-669

SI3410DV-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 8A 6-TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 4.1W (Tc)
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

パッケージ: SOT-23-6 Thin, TSOT-23-6

在庫601,200

MOSFET (Metal Oxide)

30V

8A (Tc)

4.5V, 10V

3V @ 250µA

33nC @ 10V

1295pF @ 15V

±20V

-

2W (Ta), 4.1W (Tc)

19.5 mOhm @ 5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

6-TSOP

SOT-23-6 Thin, TSOT-23-6

DMP1005UFDF-7

Diodes Incorporated

MOSFET P-CH 12V 26A 6UDFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2020-6 (Type F)
Package / Case: 6-UDFN Exposed Pad

パッケージ: -

在庫1,188,426

MOSFET (Metal Oxide)

12 V

26A (Tc)

1.8V, 4.5V

1V @ 250µA

47 nC @ 8 V

2475 pF @ 6 V

±8V

-

2.1W (Ta)

8.5mOhm @ 5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

U-DFN2020-6 (Type F)

6-UDFN Exposed Pad

FDZ451PZ

Fairchild Semiconductor

SMALL SIGNAL FIELD-EFFECT TRANSI

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-WLCSP (0.8x0.8)
Package / Case: 4-XFBGA, WLCSP

パッケージ: -

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MOSFET (Metal Oxide)

20 V

2.6A (Ta)

1.5V, 4.5V

1.2V @ 250µA

8.8 nC @ 4.5 V

555 pF @ 10 V

±8V

-

400mW (Ta)

140mOhm @ 2A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

4-WLCSP (0.8x0.8)

4-XFBGA, WLCSP

MSJPF07N80A-BP

Micro Commercial Co

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 78W (Tj)
Rds On (Max) @ Id, Vgs: 950mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

パッケージ: -

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MOSFET (Metal Oxide)

800 V

7A (Tc)

10V

4.5V @ 250µA

14 nC @ 10 V

502 pF @ 25 V

±20V

-

78W (Tj)

950mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

XP70SL1K4AH

YAGEO XSEMI

MOSFET N-CH 700V 3.2A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫3,000

MOSFET (Metal Oxide)

700 V

3.2A (Tc)

10V

5V @ 250µA

16.8 nC @ 10 V

608 pF @ 100 V

±20V

-

2W (Ta), 28.4W (Tc)

1.4Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

PJMD990N65EC_L2_00001

Panjit International Inc.

650V SUPER JUNCTION MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 47.5W (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫18,000

MOSFET (Metal Oxide)

650 V

4.7A (Tc)

10V

4V @ 250µA

9.7 nC @ 10 V

306 pF @ 400 V

±30V

-

47.5W (Tc)

990mOhm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

2SK2114-E

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

DMTH69M8LFVW-13

Diodes Incorporated

MOSFET N-CH 60V 15.9/45.4A PWRDI

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Package / Case: 8-PowerVDFN

パッケージ: -

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MOSFET (Metal Oxide)

60 V

15.9A (Ta), 45.4A (Tc)

4.5V, 10V

3V @ 250µA

33.5 nC @ 10 V

1925 pF @ 30 V

±16V

-

3.6W (Ta), 29.4W (Tc)

9.5mOhm @ 13.5A, 10V

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

PowerDI3333-8 (SWP) Type UX

8-PowerVDFN

SIRC18DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V
Vgs (Max): +20V, -16V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 54.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

パッケージ: -

在庫19,497

MOSFET (Metal Oxide)

30 V

60A (Tc)

4.5V, 10V

2.4V @ 250µA

111 nC @ 10 V

5060 pF @ 15 V

+20V, -16V

Schottky Diode (Body)

54.3W (Tc)

1.1mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SO-8

RJK5012DPP-MG-T2

Renesas

RJK5012DPP - N CHANNEL MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220FN
Package / Case: TO-220-3 Full Pack

パッケージ: -

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MOSFET (Metal Oxide)

500 V

12A (Ta)

10V

4.5V @ 1mA

29 nC @ 10 V

1100 pF @ 25 V

±30V

-

30W (Tc)

620mOhm @ 6A, 10V

150°C

Through Hole

TO-220FN

TO-220-3 Full Pack

SPP08N80C3XK

Infineon Technologies

MOSFET N-CH 800V 8A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

パッケージ: -

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MOSFET (Metal Oxide)

800 V

8A (Tc)

10V

3.9V @ 470µA

60 nC @ 10 V

1100 pF @ 100 V

±20V

-

104W (Tc)

650mOhm @ 5.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

AONS66909

Alpha & Omega Semiconductor Inc.

N

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerSMD, Flat Leads

パッケージ: -

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MOSFET (Metal Oxide)

100 V

30A (Ta), 160A (Tc)

8V, 10V

3.7V @ 250µA

75 nC @ 10 V

4100 pF @ 50 V

±20V

-

7.3W (Ta), 208W (Tc)

4.2mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (5x6)

8-PowerSMD, Flat Leads

C3M0075120J-TR

Wolfspeed, Inc.

SICFET N-CH 1200V 30A TO263-7

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
Vgs (Max): +15V, -4V
FET Feature: -
Power Dissipation (Max): 113.6W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

パッケージ: -

在庫2,400

SiCFET (Silicon Carbide)

1200 V

30A (Tc)

15V

4V @ 5mA

51 nC @ 15 V

1350 pF @ 1000 V

+15V, -4V

-

113.6W (Tc)

90mOhm @ 20A, 15V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-7

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

2SJ281-TL-E

onsemi

PCH 4V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

UPA1724G-E1-A

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

QM2404K-ML

MOSLEADER

Single N 20V 4.8A SOT23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

DI001N65PTK

Diotec Semiconductor

IC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 31.2W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-QFN (3x3)
Package / Case: 8-PowerVDFN

パッケージ: -

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MOSFET (Metal Oxide)

650 V

1A (Tc)

10V

2.5V @ 250µA

5.8 nC @ 10 V

209 pF @ 350 V

±20V

-

31.2W (Tc)

1.6Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-QFN (3x3)

8-PowerVDFN

PJQ5435E-AU_R2_006A1

Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
Package / Case: 8-PowerVDFN

パッケージ: -

在庫9,000

MOSFET (Metal Oxide)

30 V

13.2A (Ta), 47A (Tc)

4.5V, 10V

2.5V @ 250µA

34 nC @ 10 V

1610 pF @ 25 V

±25V

-

3.3W (Ta), 43W (Tc)

12.1mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DFN5060-8

8-PowerVDFN

RJK03J3DPA-00-J5A

Renesas Electronics Corporation

N-CHANNEL POWER SWITCHING MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

部品番号	メーカ	説明	パッケージ	在庫	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3315STRRPBF	Infineon Technologies	MOSFET N-CH 150V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫72,924	MOSFET (Metal Oxide)	150V	21A (Tc)	10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	±20V	-	3.8W (Ta), 94W (Tc)	82 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7421D1PBF	Infineon Technologies	MOSFET N-CH 30V 5.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,792	MOSFET (Metal Oxide)	30V	5.8A (Ta)	4.5V, 10V	1V @ 250µA	27nC @ 10V	510pF @ 25V	±20V	Schottky Diode (Isolated)	2W (Ta)	35 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF9520NS	Infineon Technologies	MOSFET P-CH 100V 6.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫460,788	MOSFET (Metal Oxide)	100V	6.8A (Tc)	10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	±20V	-	3.8W (Ta), 48W (Tc)	480 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AO3415_108	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫3,312	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFN260N17T	IXYS	MOSFET N-CH 170V 245A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 245A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1090W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	パッケージ: SOT-227-4, miniBLOC	在庫7,296	MOSFET (Metal Oxide)	170V	245A	10V	5V @ 8mA	400nC @ 10V	24000pF @ 25V	±20V	-	1090W (Tc)	6.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
FQPF13N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8.7A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 4.35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫6,064	MOSFET (Metal Oxide)	100V	8.7A (Tc)	10V	4V @ 250µA	16nC @ 10V	450pF @ 25V	±25V	-	30W (Tc)	180 mOhm @ 4.35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IXTQ50N20P	IXYS	MOSFET N-CH 200V 50A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	パッケージ: TO-3P-3, SC-65-3	在庫3,520	MOSFET (Metal Oxide)	200V	50A (Tc)	10V	5V @ 250µA	70nC @ 10V	2720pF @ 25V	±20V	-	360W (Tc)	60 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
AOW15S60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 15A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫4,368	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	3.8V @ 250µA	15.6nC @ 10V	717pF @ 100V	±30V	-	208W (Tc)	290 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
MCQ9435-TP	Micro Commercial Co	P-CHANNEL MOSFET, SOP-8 PACKAGE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.1A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫3,504	MOSFET (Metal Oxide)	30V	5.1A	10V	2V @ 250µA	40nC @ 10V	-	±20V	-	1.4W	105 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
STE40NC60	STMicroelectronics	MOSFET N-CH 600V 40A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: ISOTOP	パッケージ: ISOTOP	在庫6,660	MOSFET (Metal Oxide)	600V	40A	10V	4V @ 250µA	430nC @ 10V	11100pF @ 25V	±30V	-	460W (Tc)	130 mOhm @ 20A, 10V	150°C (TJ)	Chassis Mount	ISOTOP?	ISOTOP
BUK9Y153-100E,115	Nexperia USA Inc.	MOSFET N-CH 100V 9.4A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 146 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	パッケージ: SC-100, SOT-669	在庫38,736	MOSFET (Metal Oxide)	100V	9.4A (Tc)	5V	2.1V @ 1mA	6.8nC @ 5V	716pF @ 25V	±10V	-	37W (Tc)	146 mOhm @ 2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SI3410DV-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 8A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 4.1W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	パッケージ: SOT-23-6 Thin, TSOT-23-6	在庫601,200	MOSFET (Metal Oxide)	30V	8A (Tc)	4.5V, 10V	3V @ 250µA	33nC @ 10V	1295pF @ 15V	±20V	-	2W (Ta), 4.1W (Tc)	19.5 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
DMP1005UFDF-7	Diodes Incorporated	MOSFET P-CH 12V 26A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	パッケージ: -	在庫1,188,426	MOSFET (Metal Oxide)	12 V	26A (Tc)	1.8V, 4.5V	1V @ 250µA	47 nC @ 8 V	2475 pF @ 6 V	±8V	-	2.1W (Ta)	8.5mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
FDZ451PZ	Fairchild Semiconductor	SMALL SIGNAL FIELD-EFFECT TRANSI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (0.8x0.8) Package / Case: 4-XFBGA, WLCSP	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	20 V	2.6A (Ta)	1.5V, 4.5V	1.2V @ 250µA	8.8 nC @ 4.5 V	555 pF @ 10 V	±8V	-	400mW (Ta)	140mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-WLCSP (0.8x0.8)	4-XFBGA, WLCSP
MSJPF07N80A-BP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 78W (Tj) Rds On (Max) @ Id, Vgs: 950mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	800 V	7A (Tc)	10V	4.5V @ 250µA	14 nC @ 10 V	502 pF @ 25 V	±20V	-	78W (Tj)	950mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
XP70SL1K4AH	YAGEO XSEMI	MOSFET N-CH 700V 3.2A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 28.4W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫3,000	MOSFET (Metal Oxide)	700 V	3.2A (Tc)	10V	5V @ 250µA	16.8 nC @ 10 V	608 pF @ 100 V	±20V	-	2W (Ta), 28.4W (Tc)	1.4Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJMD990N65EC_L2_00001	Panjit International Inc.	650V SUPER JUNCTION MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 47.5W (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫18,000	MOSFET (Metal Oxide)	650 V	4.7A (Tc)	10V	4V @ 250µA	9.7 nC @ 10 V	306 pF @ 400 V	±30V	-	47.5W (Tc)	990mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK2114-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMTH69M8LFVW-13	Diodes Incorporated	MOSFET N-CH 60V 15.9/45.4A PWRDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	60 V	15.9A (Ta), 45.4A (Tc)	4.5V, 10V	3V @ 250µA	33.5 nC @ 10 V	1925 pF @ 30 V	±16V	-	3.6W (Ta), 29.4W (Tc)	9.5mOhm @ 13.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
SIRC18DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 54.3W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	パッケージ: -	在庫19,497	MOSFET (Metal Oxide)	30 V	60A (Tc)	4.5V, 10V	2.4V @ 250µA	111 nC @ 10 V	5060 pF @ 15 V	+20V, -16V	Schottky Diode (Body)	54.3W (Tc)	1.1mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
RJK5012DPP-MG-T2	Renesas	RJK5012DPP - N CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	500 V	12A (Ta)	10V	4.5V @ 1mA	29 nC @ 10 V	1100 pF @ 25 V	±30V	-	30W (Tc)	620mOhm @ 6A, 10V	150°C	Through Hole	TO-220FN	TO-220-3 Full Pack
SPP08N80C3XK	Infineon Technologies	MOSFET N-CH 800V 8A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 470µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	3.9V @ 470µA	60 nC @ 10 V	1100 pF @ 100 V	±20V	-	104W (Tc)	650mOhm @ 5.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
AONS66909	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.3W (Ta), 208W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	100 V	30A (Ta), 160A (Tc)	8V, 10V	3.7V @ 250µA	75 nC @ 10 V	4100 pF @ 50 V	±20V	-	7.3W (Ta), 208W (Tc)	4.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
C3M0075120J-TR	Wolfspeed, Inc.	SICFET N-CH 1200V 30A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 113.6W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	パッケージ: -	在庫2,400	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	15V	4V @ 5mA	51 nC @ 15 V	1350 pF @ 1000 V	+15V, -4V	-	113.6W (Tc)	90mOhm @ 20A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
2SJ281-TL-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA1724G-E1-A	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
QM2404K-ML	MOSLEADER	Single N 20V 4.8A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DI001N65PTK	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31.2W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	650 V	1A (Tc)	10V	2.5V @ 250µA	5.8 nC @ 10 V	209 pF @ 350 V	±20V	-	31.2W (Tc)	1.6Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerVDFN
PJQ5435E-AU_R2_006A1	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	パッケージ: -	在庫9,000	MOSFET (Metal Oxide)	30 V	13.2A (Ta), 47A (Tc)	4.5V, 10V	2.5V @ 250µA	34 nC @ 10 V	1610 pF @ 25 V	±25V	-	3.3W (Ta), 43W (Tc)	12.1mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
RJK03J3DPA-00-J5A	Renesas Electronics Corporation	N-CHANNEL POWER SWITCHING MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-