ページ 416 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - シングル

レコード 42,029
ページ  416/1,401
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF6629TRPBF
Infineon Technologies

MOSFET N-CH 25V 29A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4260pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 29A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
パッケージ: DirectFET? Isometric MX
在庫15,600
MOSFET (Metal Oxide)
25V
29A (Ta), 180A (Tc)
4.5V, 10V
2.35V @ 100µA
51nC @ 4.5V
4260pF @ 13V
±20V
-
2.8W (Ta), 100W (Tc)
2.1 mOhm @ 29A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
hot AOD522
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
在庫199,860
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RJK5031DPD-00#J2
Renesas Electronics America

MOSFET N-CH 500V 3A MP3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫6,320
MOSFET (Metal Oxide)
500V
3A (Ta)
10V
-
-
280pF @ 25V
±30V
-
40.3W (Tc)
3.2 Ohm @ 1.5A, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
FQD9N25TF
Fairchild/ON Semiconductor

MOSFET N-CH 250V 7.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫4,384
MOSFET (Metal Oxide)
250V
7.4A (Tc)
10V
5V @ 250µA
20nC @ 10V
700pF @ 25V
±30V
-
2.5W (Ta), 55W (Tc)
420 mOhm @ 3.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IXFK32N90P
IXYS

MOSFET N-CH 900V 32A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
パッケージ: TO-264-3, TO-264AA
在庫3,408
MOSFET (Metal Oxide)
900V
32A (Tc)
10V
6.5V @ 1mA
215nC @ 10V
10600pF @ 25V
±30V
-
960W (Tc)
300 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
FKP202
Sanken

MOSFET N-CH 200V 45A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 22A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3 Full Pack
パッケージ: TO-220-3 Full Pack
在庫2,768
MOSFET (Metal Oxide)
200V
45A (Ta)
10V
4.5V @ 1mA
-
2000pF @ 25V
±30V
-
40W (Tc)
53 mOhm @ 22A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3 Full Pack
TK42A12N1,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 120V 42A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 60V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 21A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
パッケージ: TO-220-3 Full Pack, Isolated Tab
在庫7,520
MOSFET (Metal Oxide)
120V
42A (Tc)
10V
4V @ 1mA
52nC @ 10V
3100pF @ 60V
±20V
-
35W (Tc)
9.4 mOhm @ 21A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack, Isolated Tab
ATP401-TL-H
ON Semiconductor

MOSFET N-CH 60V 100A ATPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: ATPAK (2 leads+tab)
パッケージ: ATPAK (2 leads+tab)
在庫3,888
MOSFET (Metal Oxide)
60V
100A (Ta)
4.5V, 10V
-
300nC @ 10V
17000pF @ 20V
±20V
-
90W (Tc)
3.7 mOhm @ 50A, 10V
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 leads+tab)
hot IRF730ASTRLPBF
Vishay Siliconix

MOSFET N-CH 400V 5.5A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫18,084
MOSFET (Metal Oxide)
400V
5.5A (Tc)
10V
4.5V @ 250µA
22nC @ 10V
600pF @ 25V
±30V
-
74W (Tc)
1 Ohm @ 3.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AON6596
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
パッケージ: 8-PowerSMD, Flat Leads
在庫7,856
MOSFET (Metal Oxide)
30V
20A (Ta), 35A (Tc)
4.5V, 10V
2.5V @ 250µA
30nC @ 10V
1150pF @ 15V
±20V
-
5W (Ta), 41W (Tc)
7.5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
IXFH60N65X2
IXYS

MOSFET N-CH 650V 60A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: -
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫3,680
MOSFET (Metal Oxide)
650V
60A (Tc)
10V
5.5V @ 4mA
107nC @ 10V
6180pF @ 25V
±30V
-
780W (Tc)
52 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
-
TO-247-3
hot STFW3N170
STMicroelectronics

MOSFET N-CH 1700V 2.6A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 Ohm @ 1.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
パッケージ: TO-3P-3 Full Pack
在庫6,432
MOSFET (Metal Oxide)
1700V
2.6A (Tc)
10V
5V @ 250µA
44nC @ 10V
1100pF @ 100V
±30V
-
63W (Tc)
13 Ohm @ 1.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
IRF7749L2TRPBF
Infineon Technologies

MOSFET N-CH 60V DIRECTFET L8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET L8
  • Package / Case: DirectFET? Isometric L8
パッケージ: DirectFET? Isometric L8
在庫6,480
MOSFET (Metal Oxide)
60V
33A (Ta), 375A (Tc)
10V
4V @ 250µA
300nC @ 10V
12320pF @ 25V
±20V
-
3.3W (Ta), 125W (Tc)
1.5 mOhm @ 120A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DIRECTFET L8
DirectFET? Isometric L8
RQ5C060BCTCL
Rohm Semiconductor

PCH -20V -6A MIDDLE POWER MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 21.1 mOhm @ 6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
パッケージ: SC-96
在庫7,728
MOSFET (Metal Oxide)
20V
6A (Ta)
4.5V
1.2V @ 1mA
19.2nC @ 4.5V
1360pF @ 10V
±8V
-
1W (Tc)
21.1 mOhm @ 6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSMT3
SC-96
STW30NM60N
STMicroelectronics

MOSFET N-CH 600V 25A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫8,460
MOSFET (Metal Oxide)
600V
25A (Tc)
10V
4V @ 250µA
91nC @ 10V
2700pF @ 50V
±30V
-
190W (Tc)
130 mOhm @ 12.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRFI4228PBF
Infineon Technologies

MOSFET N-CH 150V 34A TO-220AB FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
パッケージ: TO-220-3 Full Pack
在庫20,892
MOSFET (Metal Oxide)
150V
34A (Tc)
10V
5V @ 250µA
110nC @ 10V
4560pF @ 25V
±30V
-
46W (Tc)
16 mOhm @ 20A, 10V
-40°C ~ 150°C (TJ)
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
NTE2387
NTE Electronics, Inc

MOSFET N-CHANNEL 800V 4.1A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
800 V
4.1A (Tc)
10V
4V @ 250µA
78 nC @ 10 V
1300 pF @ 25 V
±20V
-
125W (Tc)
3Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
UF3SC120009K4S
Qorvo

SICFET N-CH 1200V 120A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Cascode SiCJFET)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 789W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
パッケージ: -
在庫3,402
SiCFET (Cascode SiCJFET)
1200 V
120A (Tc)
12V
6V @ 10mA
234 nC @ 15 V
8512 pF @ 100 V
±20V
-
789W (Tc)
11mOhm @ 100A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
NP28N10SDE-E1-AY
Renesas

NP28N10SDE-E1-AY - MOS FIELD EFF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 14A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
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MOSFET (Metal Oxide)
100 V
28A (Tc)
4.5V, 10V
2.5V @ 250µA
75 nC @ 10 V
3300 pF @ 25 V
±20V
-
1.2W (Ta), 100W (Tc)
52mOhm @ 14A, 10V
175°C
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
MC3541-TP
Micro Commercial Co

Interface

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-723
  • Package / Case: SOT-723
パッケージ: -
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MOSFET (Metal Oxide)
30 V
100mA
2.5V, 4V
1.5V @ 100µA
-
13 pF @ 5 V
±20V
-
150mW
8Ohm @ 10mA, 4V
-55°C ~ 150°C
Surface Mount
SOT-723
SOT-723
SSFQ3903
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -13A, -30V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: -
在庫18,000
MOSFET (Metal Oxide)
30 V
13A (Tc)
4.5V, 10V
2.5V @ 250µA
56 nC @ 4.5 V
4800 pF @ 15 V
±20V
-
4.2W (Tc)
9.5mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
R6049YNXC7G
Rohm Semiconductor

NCH 600V 22A, TO-220FM, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 2.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
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在庫2,940
MOSFET (Metal Oxide)
600 V
22A (Tc)
10V, 12V
6V @ 2.9mA
65 nC @ 10 V
2940 pF @ 100 V
±30V
-
90W (Tc)
82mOhm @ 11A, 12V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
AM2338NE-T1-PF-ML
MOSLEADER

Single N 30V 5.2A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
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TSM180P03CS
Taiwan Semiconductor Corporation

-30V, -10A, SINGLE P-CHANNEL POW

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: -
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MOSFET (Metal Oxide)
30 V
10A (Tc)
4.5V, 10V
2.5V @ 250µA
14.6 nC @ 4.5 V
1730 pF @ 15 V
±20V
-
2.5W (Tc)
18mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
DMTH10H003SPSW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type Q)
  • Package / Case: 8-PowerTDFN
パッケージ: -
在庫7,212
MOSFET (Metal Oxide)
100 V
166A (Tc)
6V, 10V
4V @ 250µA
85 nC @ 10 V
5542 pF @ 50 V
±20V
-
2.6W (Ta), 167W (Tc)
3mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
FK4B01110LE
Nuvoton Technology Corporation

SINGLE NCH MOSFET 12V, 2.3A 57MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 118µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.55 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 340mW (Ta)
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ALGA004-W-0606-RA01
  • Package / Case: 4-XFLGA
パッケージ: -
在庫3,000
MOSFET (Metal Oxide)
12 V
2.3A (Ta)
1.5V, 4.5V
1V @ 118µA
2.55 nC @ 4.5 V
274 pF @ 10 V
±8V
-
340mW (Ta)
64mOhm @ 1.5A, 4.5V
-40°C ~ 85°C (TA)
Surface Mount
ALGA004-W-0606-RA01
4-XFLGA
IPDQ60R022S7AXTMA1
Infineon Technologies

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 416W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
パッケージ: -
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MOSFET (Metal Oxide)
600 V
24A (Tc)
12V
4.5V @ 1.44mA
150 nC @ 12 V
5640 pF @ 300 V
±20V
-
416W (Tc)
22mOhm @ 23A, 12V
-40°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
FDMS9410L-F085
onsemi

MOSFET N-CH 40V 50A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tj)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerVDFN
パッケージ: -
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MOSFET (Metal Oxide)
40 V
50A (Tc)
10V
3V @ 250µA
45 nC @ 10 V
1960 pF @ 20 V
±20V
-
75W (Tj)
4.1mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
Power56
8-PowerVDFN
IXFT150N17T2
IXYS

MOSFET N-CH 175V 150A TO268HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 175 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 880W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268HV (IXFT)
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
パッケージ: -
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MOSFET (Metal Oxide)
175 V
150A (Tc)
10V
4.5V @ 1mA
233 nC @ 10 V
14600 pF @ 25 V
±20V
-
880W (Tc)
12mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-268HV (IXFT)
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
PMV37EN2-ML
MOSLEADER

N 30V 5.6A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
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