ページ 422 - トランジスタ - FET、MOSFET - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - シングル

レコード 42,029
ページ  422/1,502
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在庫
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPD80N06S3-09
Infineon Technologies

MOSFET N-CH 55V 80A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 55µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫4,144
MOSFET (Metal Oxide)
55V
80A (Tc)
10V
4V @ 55µA
88nC @ 10V
6100pF @ 25V
±20V
-
107W (Tc)
8.4 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRLBA1304PPBF
Infineon Technologies

MOSFET N-CH 40V 185A SUPER-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: SUPER-220? (TO-273AA)
  • Package / Case: Super-220?-3 (Straight Leads)
パッケージ: Super-220?-3 (Straight Leads)
在庫68,400
MOSFET (Metal Oxide)
40V
185A (Tc)
4.5V, 10V
1V @ 250µA
140nC @ 4.5V
7660pF @ 25V
±16V
-
300W (Tc)
4 mOhm @ 110A, 10V
-55°C ~ 175°C (TJ)
Through Hole
SUPER-220? (TO-273AA)
Super-220?-3 (Straight Leads)
hot IRL3714ZL
Infineon Technologies

MOSFET N-CH 20V 36A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA
在庫16,200
MOSFET (Metal Oxide)
20V
36A (Tc)
4.5V, 10V
2.55V @ 250µA
7.2nC @ 4.5V
550pF @ 10V
±20V
-
35W (Tc)
16 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
IXTV26N60P
IXYS

MOSFET N-CH 600V 26A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
パッケージ: TO-220-3, Short Tab
在庫5,712
MOSFET (Metal Oxide)
600V
26A (Tc)
10V
5V @ 250µA
72nC @ 10V
4150pF @ 25V
±30V
-
460W (Tc)
270 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
hot FDZ206P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 13A BGA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4280pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 30-BGA (4x3.5)
  • Package / Case: 30-WFBGA
パッケージ: 30-WFBGA
在庫336,000
MOSFET (Metal Oxide)
20V
13A (Ta)
2.5V, 4.5V
1.5V @ 250µA
53nC @ 4.5V
4280pF @ 10V
±12V
-
2.2W (Ta)
9.5 mOhm @ 13A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
30-BGA (4x3.5)
30-WFBGA
BUK6207-30C,118
NXP

MOSFET N-CH 30V 90A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 54.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫6,400
MOSFET (Metal Oxide)
30V
90A (Tc)
4.5V, 10V
2.8V @ 1mA
54.8nC @ 10V
3470pF @ 25V
±16V
-
128W (Tc)
5.2 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFH5302DTRPBF
Infineon Technologies

MOSFET N-CH 30V 29A 8VQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3635pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6) Single Die
  • Package / Case: 8-PowerVDFN
パッケージ: 8-PowerVDFN
在庫432,600
MOSFET (Metal Oxide)
30V
29A (Ta), 100A (Tc)
4.5V, 10V
2.35V @ 100µA
55nC @ 10V
3635pF @ 25V
±20V
-
3.6W (Ta), 104W (Tc)
2.5 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6) Single Die
8-PowerVDFN
NTMFS6B14NT1G
ON Semiconductor

MOSFET N-CH 100V 10A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫4,224
MOSFET (Metal Oxide)
100V
10A (Ta), 50A (Tc)
6V, 10V
4V @ 250µA
20nC @ 10V
1300pF @ 50V
±20V
-
3.1W (Ta), 77W (Tc)
15 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NTTFS4H05NTAG
ON Semiconductor

MOSFET N-CH 25V 22.4A U8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 22.4A (Ta), 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.66W (Ta), 46.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
パッケージ: 8-PowerWDFN
在庫6,624
MOSFET (Metal Oxide)
25V
22.4A (Ta), 94A (Tc)
4.5V, 10V
2.1V @ 250µA
18.9nC @ 10V
1205pF @ 12V
±20V
-
2.66W (Ta), 46.3W (Tc)
3.3 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
TSM6N50CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫2,832
MOSFET (Metal Oxide)
500V
5.6A (Ta)
10V
4V @ 250µA
25nC @ 10V
900pF @ 25V
±30V
-
90W (Tc)
1.4 Ohm @ 2.8A, 10V
150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
STLD200N4F6AG
STMicroelectronics

MOSFET N-CH 40V 120A PWRFLAT 5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 158W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
パッケージ: 8-PowerSMD, Flat Leads
在庫2,816
MOSFET (Metal Oxide)
40V
120A (Tc)
6.5V, 10V
4V @ 1mA
172nC @ 10V
10700pF @ 10V
±20V
-
158W (Tc)
1.5 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerSMD, Flat Leads
IXFP22N60P3
IXYS

MOSFET N-CH 600V 22A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫6,448
MOSFET (Metal Oxide)
600V
22A (Tc)
10V
5V @ 1.5mA
38nC @ 10V
2600pF @ 25V
±30V
-
500W (Tc)
360 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPB70N10S312ATMA1
Infineon Technologies

MOSFET N-CH 100V 70A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫21,840
MOSFET (Metal Oxide)
100V
70A (Tc)
10V
4V @ 83µA
66nC @ 10V
4355pF @ 25V
±20V
-
125W (Tc)
11.3 mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot CMLDM8120 TR
Central Semiconductor Corp

MOSFET P-CH 20V 0.86A SOT563

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V
  • Vgs (Max): 8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-563
  • Package / Case: SOT-563, SOT-666
パッケージ: SOT-563, SOT-666
在庫9,420
MOSFET (Metal Oxide)
20V
860mA (Ta)
1.8V, 4.5V
1V @ 250µA
3.56nC @ 4.5V
200pF @ 16V
8V
-
150mW (Ta)
150 mOhm @ 950mA, 4.5V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563
SOT-563, SOT-666
NTTFS5C670NLTAG
ON Semiconductor

MOSFET N-CH 60V 16A WDFN8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 53µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
パッケージ: 8-PowerWDFN
在庫13,656
MOSFET (Metal Oxide)
60V
16A (Ta), 70A (Tc)
4.5V, 10V
2V @ 53µA
20nC @ 10V
1400pF @ 25V
±20V
-
3.2W (Ta), 63W (Tc)
6.5 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
DMT6016LPS-13
Diodes Incorporated

MOSFET N-CH 60V 10.6A POWERDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.23W (Ta)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫26,724
MOSFET (Metal Oxide)
60V
10.6A (Ta)
4.5V, 10V
2.5V @ 250µA
17nC @ 10V
864pF @ 30V
±20V
-
1.23W (Ta)
16 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
FQT1N60CTF_WS
Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.2A SOT-223-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
パッケージ: TO-261-4, TO-261AA
在庫36,000
MOSFET (Metal Oxide)
600V
200mA (Tc)
10V
4V @ 250µA
6.2nC @ 10V
170pF @ 25V
±30V
-
2.1W (Tc)
11.5 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
DMN3066LVTQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4 nC @ 4.5 V
328 pF @ 10 V
±12V
-
900mW
67mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
SIHA30N60AEL-GE3
Vishay Siliconix

MOSFET N-CH 600V 28A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
4V @ 250µA
120 nC @ 10 V
2565 pF @ 100 V
±30V
-
39W (Tc)
120mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
IRFH5206TR2PBF
Infineon Technologies

MOSFET N-CH 60V 16A 5X6 PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerVDFN
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
60 V
16A (Ta), 89A (Tc)
-
4V @ 100µA
60 nC @ 10 V
2490 pF @ 25 V
-
-
-
6.7mOhm @ 50A, 10V
-
Surface Mount
8-PQFN (5x6)
8-PowerVDFN
IPA030N10NF2SXKSA1
Infineon Technologies

TRENCH >=100V PG-TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 169µA
  • Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
在庫84
MOSFET (Metal Oxide)
100 V
83A (Tc)
6V, 10V
3.8V @ 169µA
154 nC @ 10 V
7300 pF @ 50 V
±20V
-
41W (Tc)
3mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
SIR5112DP-T1-RE3
Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 42.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
パッケージ: -
在庫35,934
MOSFET (Metal Oxide)
100 V
12.6A (Ta), 42.6A (Tc)
7.5V, 10V
4V @ 250µA
16 nC @ 10 V
790 pF @ 50 V
±20V
-
5W (Ta), 56.8W (Tc)
14.9mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SI1441EDH-T1-BE3
Vishay Siliconix

MOSFET P-CH 20V 4A/4A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
パッケージ: -
在庫4,926
MOSFET (Metal Oxide)
20 V
4A (Ta), 4A (Tc)
-
1V @ 250µA
33 nC @ 8 V
-
±10V
-
1.6W (Ta), 2.8W (Tc)
41mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
ISZ143N13NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FQB12N60TM
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
600 V
10.5A (Tc)
10V
5V @ 250µA
54 nC @ 10 V
1900 pF @ 25 V
±30V
-
3.13W (Ta), 180W (Tc)
700mOhm @ 5.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFQ80N25X3
IXYS

MOSFET N-CH 250V 80A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
250 V
80A (Tc)
10V
4.5V @ 1.5mA
83 nC @ 10 V
5430 pF @ 25 V
±20V
-
390W (Tc)
16mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
2N7002T-13-G
Diodes Incorporated

MOSFET N-CH 60V SOT523

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RFP23N06LE
Harris Corporation

N-CHANNEL, MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-