ページ 33 - トランジスタ - IGBT - モジュール | ディスクリート半導体製品 | Heisener Electronics
連絡先
SalesDept@heisener.com +86-755-83210559 ext. 809
Language Translation

* Please refer to the English Version as our Official Version.

トランジスタ - IGBT - モジュール

レコード 3,436
ページ  33/123
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG5K30FF06Z
Infineon Technologies

MOD IGBT 600V 30A 6PK EZIRPACK1

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Power - Max: 200W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 1.9nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: EZIRPACK 1? Module
  • Supplier Device Package: EZIRPACK 1?
パッケージ: EZIRPACK 1? Module
在庫6,416
Three Phase Inverter
600V
60A
200W
2.1V @ 15V, 30A
1mA
1.9nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
EZIRPACK 1? Module
EZIRPACK 1?
IRG5K100HF12B
Infineon Technologies

MOD IGBT 1200V 100A POWIR 62

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 780W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 11.7nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 62 Module
  • Supplier Device Package: POWIR? 62
パッケージ: POWIR? 62 Module
在庫3,824
Half Bridge
1200V
200A
780W
2.6V @ 15V, 100A
2mA
11.7nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR? 62 Module
POWIR? 62
QID1215003
Powerex Inc.

MOD IGBT 1200V 105A

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 960W
  • Vce(on) (Max) @ Vge, Ic: 6.5V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 24nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,272
2 Independent
1200V
150A
960W
6.5V @ 15V, 150A
1mA
24nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
-
-
-
VS-GT100NA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 134A 463W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
パッケージ: SOT-227-4, miniBLOC
在庫6,880
Single
1200V
134A
463W
2.85V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GB70LA60UF
Vishay Semiconductor Diodes Division

IGBT 600V 111A 447W SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 111A
  • Power - Max: 447W
  • Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
パッケージ: SOT-227-4, miniBLOC
在庫3,280
Single
600V
111A
447W
2.44V @ 15V, 70A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
IXSN35N100U1
IXYS

IGBT 64A 1000V SOT-227B

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 38A
  • Power - Max: 205W
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
  • Current - Collector Cutoff (Max): 750µA
  • Input Capacitance (Cies) @ Vce: 4.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
パッケージ: SOT-227-4, miniBLOC
在庫5,056
Single
1000V
38A
205W
3.5V @ 15V, 25A
750µA
4.5nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
hot CM600HA-28H
Powerex Inc.

IGBT MOD SGL 1400V 600A H SER

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 600A
  • Power - Max: 4100W
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 600A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 120nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: Module
在庫4,192
Single
1400V
600A
4100W
4.2V @ 15V, 600A
2mA
120nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
CM400DX-12A
Powerex Inc.

IGBT MOD DUAL 600V 400A NX SER

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 1340W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 50nF @ 10V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: Module
在庫7,824
Half Bridge
600V
400A
1340W
2.1V @ 15V, 400A
1mA
50nF @ 10V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
VS-GT100TP60N
Vishay Semiconductor Diodes Division

IGBT 600V 160A 417W INT-A-PAK

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 417W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 7.71nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
パッケージ: INT-A-PAK (3 + 4)
在庫2,320
Half Bridge
600V
160A
417W
2.1V @ 15V, 100A
5mA
7.71nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-CPV364M4UPBF
Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Power - Max: 63W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 2.1nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
パッケージ: 19-SIP (13 Leads), IMS-2
在庫5,312
-
600V
20A
63W
2.1V @ 15V, 10A
250µA
2.1nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
APTGLQ75H65T1G
Microsemi Corporation

PWR MOD IGBT4 650V 150A SP1

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SP1
  • Supplier Device Package: SP1
パッケージ: SP1
在庫7,456
Full Bridge
650V
150A
250W
2.3V @ 15V, 75A
100µA
4.62nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Through Hole
SP1
SP1
APTGT150A60T1G
Microsemi Corporation

IGBT PHASE LEG 600V 225A SP1

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 225A
  • Power - Max: 480W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
パッケージ: SP1
在庫7,568
Half Bridge
600V
225A
480W
1.9V @ 15V, 150A
250µA
9.2nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
FS150R12N2T7BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2-6

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1.2 µA
  • Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2
パッケージ: -
在庫30
Three Level Inverter
1200 V
150 A
20 mW
1.8V @ 15V, 150A
1.2 µA
30.1 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-ECONO2
FF900R17ME7B11BPSA1
Infineon Technologies

MEDIUM POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
パッケージ: -
在庫30
2 Independent
1700 V
900 A
20 mW
1.85V @ 15V, 900A
5 mA
93.8 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
FS100R12KT4GBOSA1
Infineon Technologies

IGBT MOD 1200V 100A 515W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 515 W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
在庫30
Three Phase Inverter
1200 V
100 A
515 W
2.2V @ 15V, 100A
1 mA
6.3 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF200R12KE3B2HOSA1
Infineon Technologies

IGBT MOD 1200V 295A 1050W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 295 A
  • Power - Max: 1050 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
在庫15
Half Bridge
1200 V
295 A
1050 W
2.15V @ 15V, 200A
5 mA
14 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
BSM10GD120DN2BOSA1
Infineon Technologies

IGBT MODULE 2 LOW PWR ECONO2-1

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FS450R07A2P2B31BOSA1
Infineon Technologies

IGBT MODULE PACK DRV HYBRIDD-1

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
PCHMB75W12
KYOCERA AVX

IGBT MODULE, 1IN1, CHOPPER CIRCU

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Power - Max: 290 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 8000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
Request a Quote
Single
1200 V
75 A
290 W
2V @ 15V, 75A
1 mA
8000 pF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FB30R06W1E3BOMA1
Infineon Technologies

IGBT MODULE 600V 39A 115W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 39 A
  • Power - Max: 115 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
在庫72
Three Phase Inverter
600 V
39 A
115 W
2V @ 15V, 30A
1 mA
1.65 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF300R12KE4EHOSA1
Infineon Technologies

IGBT MOD 1200V 460A 1600W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 460 A
  • Power - Max: 1600 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
Request a Quote
2 Independent
1200 V
460 A
1600 W
2.15V @ 15V, 300A
5 mA
19 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
FMM7G30US60I
Fairchild Semiconductor

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: -
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Power - Max: 104 W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Current - Collector Cutoff (Max): 250 µA
  • Input Capacitance (Cies) @ Vce: 2.1 nF @ 30 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: Module
  • Supplier Device Package: -
パッケージ: -
Request a Quote
Three Phase Inverter with Brake
600 V
30 A
104 W
2.7V @ 15V, 30A
250 µA
2.1 nF @ 30 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Through Hole
Module
-
FS200R07N3E4RB11BOSA1
Infineon Technologies

FS200R07 - IGBT MODULE

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
NXH350N100H4Q2F2S1G-R
onsemi

GEN1.5 1500V MASS MARKET

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 303 A
  • Power - Max: 592 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 42-PIM/Q2PACK (93x47)
パッケージ: -
在庫216
Three Level Inverter
1000 V
303 A
592 W
2.3V @ 15V, 375A
1 mA
24.146 nF @ 20 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
42-PIM/Q2PACK (93x47)
FZ2400R12HE4B9HDSA2
Infineon Technologies

IGBT MODULE

  • IGBT Type: Trench Field Stop
  • Configuration: 3 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 3560 A
  • Power - Max: 13500 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
Request a Quote
3 Independent
1200 V
3560 A
13500 W
2.1V @ 15V, 2.4kA
5 mA
150 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FF8MR12W2M1PB11BPSA1
Infineon Technologies

IGBT MODULE LOW POWER EASY

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FZ600R12KP4HOSA1
Infineon Technologies

IGBT MODULE 1200V 600A

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 42 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
在庫30
Single
1200 V
600 A
-
2.05V @ 15V, 600A
5 mA
42 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
APTGTQ100DA65T1G
Microchip Technology

IGBT MODULE 650V 100A 250W SP1

  • IGBT Type: -
  • Configuration: Boost Chopper
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 250 W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100 µA
  • Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP1
パッケージ: -
Request a Quote
Boost Chopper
650 V
100 A
250 W
2.2V @ 15V, 100A
100 µA
6 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP1