ページ 85 - トランジスタ - IGBT - モジュール | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - IGBT - モジュール

レコード 3,436
ページ  85/123
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パッケージ
在庫
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Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7T200HF12B
Infineon Technologies

MOD IGBT 1200V 200A POWIR 62

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 1060W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 22.4nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 62 Module
  • Supplier Device Package: POWIR? 62
パッケージ: POWIR? 62 Module
在庫5,360
Half Bridge
1200V
400A
1060W
2.2V @ 15V, 200A
2mA
22.4nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR? 62 Module
POWIR? 62
IRG5K150HF12B
Infineon Technologies

MOD IGBT 1200V 150A POWIR 62

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 300A
  • Power - Max: 1060W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 19nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 62 Module
  • Supplier Device Package: POWIR? 62
パッケージ: POWIR? 62 Module
在庫5,312
Half Bridge
1200V
300A
1060W
2.6V @ 15V, 150A
2mA
19nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR? 62 Module
POWIR? 62
VS-GT400TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 750A 2344W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 750A
  • Power - Max: 2344W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 51.2nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
パッケージ: Double INT-A-PAK (3 + 8)
在庫5,232
Half Bridge
1200V
750A
2344W
2.35V @ 15V, 400A
5mA
51.2nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
VS-EMG050J60N
Vishay Semiconductor Diodes Division

IGBT 600V 88A 338W EMIPAK2

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 88A
  • Power - Max: 338W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: EMIPAK2
  • Supplier Device Package: EMIPAK2
パッケージ: EMIPAK2
在庫3,776
Half Bridge
600V
88A
338W
2.1V @ 15V, 50A
100µA
9.5nF @ 30V
Standard
Yes
150°C (TJ)
Chassis Mount
EMIPAK2
EMIPAK2
CM100E3U-12H
Powerex Inc.

IGBT MOD CHOP 600V 100A U SER

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 400W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 8.8nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: Module
在庫7,072
Single
600V
100A
400W
3V @ 15V, 100A
1mA
8.8nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APTGT50SK120D1G
Microsemi Corporation

IGBT 1200V 75A 270W D1

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Power - Max: 270W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
パッケージ: D1
在庫6,176
Single
1200V
75A
270W
2.1V @ 15V, 50A
5mA
3.6nF @ 25V
Standard
No
-
Chassis Mount
D1
D1
APTGF90A60TG
Microsemi Corporation

IGBT MODULE NPT PHASE LEG SP4

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫7,888
Half Bridge
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTGF530U120D4G
Microsemi Corporation

IGBT 1200V 700A 3900W D4

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 700A
  • Power - Max: 3900W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 37nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: D4
  • Supplier Device Package: D4
パッケージ: D4
在庫5,296
Single
1200V
700A
3900W
3.7V @ 15V, 600A
5mA
37nF @ 25V
Standard
No
-
Chassis Mount
D4
D4
VIO75-06P1
IXYS

MOD IGBT DIODE SGL 600V ECOPAC2

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 69A
  • Power - Max: 208W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 800µA
  • Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
パッケージ: ECO-PAC2
在庫4,928
Single
600V
69A
208W
2.8V @ 15V, 75A
800µA
2.8nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC2
ECO-PAC2
MWI100-12A8
IXYS

MOD IGBT SIXPACK RBSOA 1200V E3

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 640W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
  • Current - Collector Cutoff (Max): 6.3mA
  • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
パッケージ: E3
在庫4,448
Three Phase Inverter
1200V
160A
640W
2.6V @ 15V, 100A
6.3mA
6.5nF @ 25V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
E3
E3
APTGL700U120D4G
Microsemi Corporation

IGBT 1200V 910A 3000W D4

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 910A
  • Power - Max: 3000W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
  • Current - Collector Cutoff (Max): 4mA
  • Input Capacitance (Cies) @ Vce: 37.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D4
  • Supplier Device Package: D4
パッケージ: D4
在庫7,968
Single
1200V
910A
3000W
2.2V @ 15V, 600A
4mA
37.2nF @ 25V
Standard
No
-40°C ~ 175°C (TJ)
Chassis Mount
D4
D4
MWI75-12T7T
IXYS

IGBT MOD TRENCH SIX-PACK E3

  • IGBT Type: Trench
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 355W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Current - Collector Cutoff (Max): 4mA
  • Input Capacitance (Cies) @ Vce: 5.35nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
パッケージ: E2
在庫2,448
Three Phase Inverter
1200V
110A
355W
2.15V @ 15V, 75A
4mA
5.35nF @ 25V
Standard
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
E2
E2
MII145-12A3
IXYS

MOD IGBT RBSOA 1200V 160A Y4-M5

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 700W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
  • Current - Collector Cutoff (Max): 6mA
  • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M5
  • Supplier Device Package: Y4-M5
パッケージ: Y4-M5
在庫3,552
Half Bridge
1200V
160A
700W
2.7V @ 15V, 100A
6mA
6.5nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Y4-M5
Y4-M5
VS-GB50TP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 100A 446W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 446W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 4.29nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
パッケージ: INT-A-PAK (3 + 4)
在庫5,536
Half Bridge
1200V
100A
446W
2.15V @ 15V, 50A
5mA
4.29nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
IXGN100N160A
IXYS

IGBT 200A 1600V SOT-227B

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1600V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
パッケージ: SOT-227-4, miniBLOC
在庫5,088
Single
1600V
200A
-
-
-
-
Standard
No
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
hot FZ1600R17KE3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1700V 1600A

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 2300A
  • Power - Max: 8950W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 145nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: Module
在庫5,728
Three Phase Inverter
1700V
2300A
8950W
2.45V @ 15V, 600A
5mA
145nF @ 25V
Standard
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
MG12300D-BA1MM
Littelfuse Inc.

IGBT 1200V 450A 1800W PKG D

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 450A
  • Power - Max: 1800W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A (Typ)
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 21.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: D3
パッケージ: Module
在庫5,424
Half Bridge
1200V
450A
1800W
1.9V @ 15V, 300A (Typ)
2mA
21.2nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
D3
FMM7G50US60N
Fairchild Semiconductor

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: -
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 139 W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250 µA
  • Input Capacitance (Cies) @ Vce: 3.565 nF @ 30 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: Module
  • Supplier Device Package: -
パッケージ: -
Request a Quote
Three Phase Inverter with Brake
600 V
50 A
139 W
2.7V @ 15V, 50A
250 µA
3.565 nF @ 30 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Through Hole
Module
-
FS300R17OE4BOSA1
Infineon Technologies

IGBT MOD 1700V 450A 1850W

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 450 A
  • Power - Max: 1850 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
在庫18
Full Bridge
1700 V
450 A
1850 W
2.3V @ 15V, 300A
3 mA
24.5 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FS100R12KT4PB15BPSA1
Infineon Technologies

IGBT MODULE

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 515 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO3
パッケージ: -
Request a Quote
Full Bridge Inverter
1200 V
100 A
515 W
2.1V @ 15V, 100A
1 mA
6.3 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONO3
FF225R17ME3BOSA1
Infineon Technologies

IGBT MOD 1700V 340A 1400W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 340 A
  • Power - Max: 1400 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 225A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 20.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
Request a Quote
Half Bridge Inverter
1700 V
340 A
1400 W
2.45V @ 15V, 225A
3 mA
20.5 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
F3L300R12MT4B22BOSA1
Infineon Technologies

IGBT MOD 1200V 450A 1550W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 450 A
  • Power - Max: 1550 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
Request a Quote
Half Bridge Inverter
1200 V
450 A
1550 W
2.1V @ 15V, 300A
1 mA
19 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
MSCGTQ100HD65C1AG
Microchip Technology

PM-IGBT-TFS-SBD~-SP1F

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 80 A
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP1
パッケージ: -
在庫6
Half Bridge
650 V
80 A
-
-
80 A
-
Standard
No
-
Chassis Mount
Module
SP1
FS450R17OE4BOSA1
Infineon Technologies

IGBT MOD 1700V 630A 2400W

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 630 A
  • Power - Max: 2400 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
Request a Quote
Full Bridge
1700 V
630 A
2400 W
2.3V @ 15V, 450A
3 mA
36 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
BSM25GD120DN2E3224BOSA1
Infineon Technologies

IGBT MOD 1200V 35A 200W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Power - Max: 200 W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
  • Current - Collector Cutoff (Max): 800 µA
  • Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
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Three Phase Inverter
1200 V
35 A
200 W
3V @ 15V, 25A
800 µA
1.65 nF @ 25 V
Standard
No
150°C (TJ)
Chassis Mount
Module
Module
FF600R12ME4WB73BPSA1
Infineon Technologies

MEDIUM POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONOD
パッケージ: -
在庫15
2 Independent
1200 V
600 A
20 mW
2.1V @ 15V, 600A
3 mA
37 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONOD
6MS30017E43W40372NOSA1
Infineon Technologies

IGBT MODULE 1700V 1800A

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 1800 A
  • Power - Max: 29140 W
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -25°C ~ 55°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
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Three Phase Inverter
1700 V
1800 A
29140 W
-
-
-
Standard
Yes
-25°C ~ 55°C
Chassis Mount
Module
Module
BSM100GB60DLCHOSA1
Infineon Technologies

IGBT MOD 600V 130A 445W

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 130 A
  • Power - Max: 445 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
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Single
600 V
130 A
445 W
2.45V @ 15V, 100A
500 µA
-
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module