ページ 136 - トランジスタ - IGBT - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - IGBT - シングル

レコード 4,424
ページ  136/158
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説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SGB30N60ATMA1
Infineon Technologies

IGBT 600V 41A 250W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 112A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 1.29mJ
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 44ns/291ns
  • Test Condition: 400V, 30A, 11 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫4,656
600V
41A
112A
2.4V @ 15V, 30A
250W
1.29mJ
Standard
140nC
44ns/291ns
400V, 30A, 11 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
RJH1CM5DPQ-E0#T2
Renesas Electronics America

IGBT 1200V 30A 245W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 245W
  • Switching Energy: 1.6mJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 74nC
  • Td (on/off) @ 25°C: 40ns/100ns
  • Test Condition: 600V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫3,456
1200V
30A
-
2.7V @ 15V, 15A
245W
1.6mJ (on), 700µJ (off)
Standard
74nC
40ns/100ns
600V, 15A, 5 Ohm, 15V
200ns
150°C (TJ)
Through Hole
TO-247-3
TO-247
hot STGW19NC60WD
STMicroelectronics

IGBT 600V 42A 125W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 125W
  • Switching Energy: 81µJ (on), 125µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 25ns/90ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫41,100
600V
42A
-
2.5V @ 15V, 12A
125W
81µJ (on), 125µJ (off)
Standard
53nC
25ns/90ns
390V, 12A, 10 Ohm, 15V
31ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXGH30N60B2
IXYS

IGBT 600V 70A 190W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: 13ns/110ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫3,952
600V
70A
150A
1.8V @ 15V, 24A
190W
320µJ (off)
Standard
66nC
13ns/110ns
400V, 24A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
SGR15N40LTM
Fairchild/ON Semiconductor

IGBT 400V 45W DPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 130A
  • Power - Max: 45W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫7,696
400V
-
130A
8V @ 4.5V, 130A
45W
-
Standard
-
-
-
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRGS4064DTRLPBF
Infineon Technologies

IGBT 600V 20A 101W D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
  • Power - Max: 101W
  • Switching Energy: 29µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 27ns/79ns
  • Test Condition: 400V, 10A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫2,352
600V
20A
40A
1.91V @ 15V, 10A
101W
29µJ (on), 200µJ (off)
Standard
32nC
27ns/79ns
400V, 10A, 22 Ohm, 15V
62ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGC4060B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫4,352
600V
8A
-
-
-
-
Standard
-
-
-
-
175°C (TJ)
Surface Mount
Die
Die
APT70GR65B2DU40
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 134A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
  • Power - Max: 595W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 305nC
  • Td (on/off) @ 25°C: 18ns/170ns
  • Test Condition: 433V, 70A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX? [B2]
パッケージ: TO-247-3
在庫4,752
650V
134A
280A
2.4V @ 15V, 70A
595W
-
Standard
305nC
18ns/170ns
433V, 70A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX? [B2]
IXGQ35N120BD1
IXYS

IGBT 1200V 75A 400W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
  • Power - Max: 400W
  • Switching Energy: 900µJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 40ns/270ns
  • Test Condition: 960V, 35A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
パッケージ: TO-3P-3, SC-65-3
在庫4,720
1200V
75A
200A
3.3V @ 15V, 35A
400W
900µJ (on), 3.8mJ (off)
Standard
140nC
40ns/270ns
960V, 35A, 3 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXGH120N30B3
IXYS

IGBT 300V 75A 540W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 480A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A
  • Power - Max: 540W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫2,784
300V
75A
480A
1.7V @ 15V, 120A
540W
-
Standard
225nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGH48N60B3
IXYS

IGBT 600V 300W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
  • Power - Max: 300W
  • Switching Energy: 840µJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 22ns/130ns
  • Test Condition: 480V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫7,040
600V
-
280A
1.8V @ 15V, 32A
300W
840µJ (on), 660µJ (off)
Standard
115nC
22ns/130ns
480V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
STGF30M65DF2
STMicroelectronics

IGBT TRENCH 650V 60A TO220FP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 38W
  • Switching Energy: 300µJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 31.6ns/115ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
パッケージ: TO-220-3 Full Pack
在庫7,408
650V
60A
120A
2V @ 15V, 30A
38W
300µJ (on), 960µJ (off)
Standard
80nC
31.6ns/115ns
400V, 30A, 10 Ohm, 15V
140ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
IKW40N65H5FKSA1
Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 255W
  • Switching Energy: 390µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 22ns/165ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫7,200
650V
74A
120A
2.1V @ 15V, 40A
255W
390µJ (on), 120µJ (off)
Standard
95nC
22ns/165ns
400V, 20A, 15 Ohm, 15V
62ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
NGTB25N120IHLWG
ON Semiconductor

IGBT 1200V 50A 192W TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
  • Power - Max: 192W
  • Switching Energy: 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: -/235ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫6,864
1200V
50A
200A
2.3V @ 15V, 25A
192W
800µJ (off)
Standard
200nC
-/235ns
600V, 25A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
RJP60F0DPM-00#T1
Renesas Electronics America

IGBT 600V 50A 40W TO-3PFM

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A
  • Power - Max: 40W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 46ns/70ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
パッケージ: TO-3PFM, SC-93-3
在庫6,132
600V
50A
-
1.82V @ 15V, 25A
40W
-
Standard
-
46ns/70ns
400V, 30A, 5 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
AOTF20B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 20A TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
  • Power - Max: 45W
  • Switching Energy: 470µJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 26ns/122ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 322ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: TO-220-3
在庫16,596
650V
60A
60A
2.15V @ 15V, 20A
45W
470µJ (on), 270µJ (off)
Standard
46nC
26ns/122ns
400V, 20A, 15 Ohm, 15V
322ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot STGB10NC60KDT4
STMicroelectronics

IGBT 600V 20A 65W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
  • Power - Max: 65W
  • Switching Energy: 55µJ (on), 85µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 17ns/72ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫58,728
600V
20A
30A
2.5V @ 15V, 5A
65W
55µJ (on), 85µJ (off)
Standard
19nC
17ns/72ns
390V, 5A, 10 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IKD04N60RFATMA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 60µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 12ns/116ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫7,424
600V
8A
12A
2.5V @ 15V, 4A
75W
60µJ (on), 50µJ (off)
Standard
27nC
12ns/116ns
400V, 4A, 43 Ohm, 15V
34ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
FGA40N65SMD
Fairchild/ON Semiconductor

IGBT 650V 80A 349W TO3P

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 349W
  • Switching Energy: 820µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 119nC
  • Td (on/off) @ 25°C: 12ns/92ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
パッケージ: TO-3P-3, SC-65-3
在庫7,776
650V
80A
120A
2.5V @ 15V, 40A
349W
820µJ (on), 260µJ (off)
Standard
119nC
12ns/92ns
400V, 40A, 6 Ohm, 15V
42ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IKW40N60H3FKSA1
Infineon Technologies

IGBT 600V 80A 306W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 306W
  • Switching Energy: 1.68mJ
  • Input Type: Standard
  • Gate Charge: 223nC
  • Td (on/off) @ 25°C: 19ns/197ns
  • Test Condition: 400V, 40A, 7.9 Ohm, 15V
  • Reverse Recovery Time (trr): 124ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫6,036
600V
80A
160A
2.4V @ 15V, 40A
306W
1.68mJ
Standard
223nC
19ns/197ns
400V, 40A, 7.9 Ohm, 15V
124ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
RGS50TSX2DGC11
Rohm Semiconductor

IGBT TRENCH FS 1200V 50A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 395 W
  • Switching Energy: 1.4mJ (on), 1.65mJ (off)
  • Input Type: Standard
  • Gate Charge: 67 nC
  • Td (on/off) @ 25°C: 37ns/140ns
  • Test Condition: 600V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 182 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
パッケージ: -
在庫1,248
1200 V
50 A
75 A
2.1V @ 15V, 25A
395 W
1.4mJ (on), 1.65mJ (off)
Standard
67 nC
37ns/140ns
600V, 25A, 10Ohm, 15V
182 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
HGT1S15N120C3S
Harris Corporation

35A, 1200V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
  • Power - Max: 164 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 100 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
パッケージ: -
Request a Quote
1200 V
35 A
120 A
3.5V @ 15V, 15A
164 W
-
Standard
100 nC
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
FGHL75T65LQDT
onsemi

FS4 LOW VCESAT IGBT 650V 75A TO2

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
  • Power - Max: 469 W
  • Switching Energy: 1.88mJ (on), 2.38mJ (off)
  • Input Type: Standard
  • Gate Charge: 793 nC
  • Td (on/off) @ 25°C: 48ns/568ns
  • Test Condition: 400V, 75A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 152 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: -
在庫1,209
650 V
80 A
300 A
1.35V @ 15V, 75A
469 W
1.88mJ (on), 2.38mJ (off)
Standard
793 nC
48ns/568ns
400V, 75A, 4.7Ohm, 15V
152 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IKY120N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 160A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 160 A
  • Current - Collector Pulsed (Icm): 480 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
  • Power - Max: 498 W
  • Switching Energy: 1.7mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 244 nC
  • Td (on/off) @ 25°C: 25ns/175ns
  • Test Condition: 400V, 120A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 64 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-2
パッケージ: -
在庫690
650 V
160 A
480 A
1.65V @ 15V, 120A
498 W
1.7mJ (on), 1.5mJ (off)
Standard
244 nC
25ns/175ns
400V, 120A, 10Ohm, 15V
64 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-2
IXXH80N65B4D1
IXYS

IGBT PT 650V 180A TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 180 A
  • Current - Collector Pulsed (Icm): 430 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
  • Power - Max: 625 W
  • Switching Energy: 3.36mJ (on), 1.83mJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 26ns/112ns
  • Test Condition: 400V, 80A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXXH)
パッケージ: -
在庫2,940
650 V
180 A
430 A
2.1V @ 15V, 80A
625 W
3.36mJ (on), 1.83mJ (off)
Standard
120 nC
26ns/112ns
400V, 80A, 3Ohm, 15V
100 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXXH)
FGY75T95LQDT
onsemi

IGBT 950V 75A

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 950 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 1.69V @ 15V, 75A
  • Power - Max: 453 W
  • Switching Energy: 2mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 663.3 nC
  • Td (on/off) @ 25°C: 52ns/496ns
  • Test Condition: 600V, 37.5A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 259 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: -
Request a Quote
950 V
150 A
225 A
1.69V @ 15V, 75A
453 W
2mJ (on), 1.8mJ (off)
Standard
663.3 nC
52ns/496ns
600V, 37.5A, 4.7Ohm, 15V
259 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGW00TS65DHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 254 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 141 nC
  • Td (on/off) @ 25°C: 48ns/186ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 90 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
パッケージ: -
在庫1,275
650 V
96 A
200 A
1.9V @ 15V, 50A
254 W
-
Standard
141 nC
48ns/186ns
400V, 25A, 10Ohm, 15V
90 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
FGH75T65SHDT-F155
onsemi

IGBT TRENCH FS 650V 150A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 455 W
  • Switching Energy: 3mJ (on), 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 123 nC
  • Td (on/off) @ 25°C: 28ns/86ns
  • Test Condition: 400V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 76 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: -
在庫540
650 V
150 A
225 A
2.1V @ 15V, 75A
455 W
3mJ (on), 750µJ (off)
Standard
123 nC
28ns/86ns
400V, 75A, 3Ohm, 15V
76 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3