ページ 14 - トランジスタ - IGBT - シングル | ディスクリート半導体製品

IRG8CH15K10D

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,864

-

IXGC16N60C2D1

IXYS

IGBT 600V 20A 63W ISOPLUS220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Power - Max: 63W
Switching Energy: 60µJ (off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 25ns/60ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?

パッケージ: ISOPLUS220?

在庫3,104

600V

20A

100A

3V @ 15V, 12A

63W

60µJ (off)

Standard

32nC

25ns/60ns

400V, 12A, 22 Ohm, 15V

30ns

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS220?

FGL60N100DTU

Fairchild/ON Semiconductor

IGBT 1000V 60A 176W TO264

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Power - Max: 176W
Switching Energy: -
Input Type: Standard
Gate Charge: 230nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.5µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264

パッケージ: TO-264-3, TO-264AA

在庫7,616

1000V

60A

120A

2.9V @ 15V, 60A

176W

-

Standard

230nC

-

1.5µs

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264

HGTP12N60C3

Fairchild/ON Semiconductor

IGBT 600V 24A 104W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 96A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Power - Max: 104W
Switching Energy: 380µJ (on), 900µJ (off)
Input Type: Standard
Gate Charge: 48nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫2,016

600V

24A

96A

2V @ 15V, 12A

104W

380µJ (on), 900µJ (off)

Standard

48nC

-

-40°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

SGW10N60RUFDTM

Fairchild/ON Semiconductor

IGBT 600V 16A 75W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Power - Max: 75W
Switching Energy: 141µJ (on), 215µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 15ns/36ns
Test Condition: 300V, 10A, 20 Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫12,180

600V

16A

30A

2.8V @ 15V, 10A

75W

141µJ (on), 215µJ (off)

Standard

30nC

15ns/36ns

300V, 10A, 20 Ohm, 15V

60ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

SGS10N60RUFTU

Fairchild/ON Semiconductor

IGBT 600V 16A 55W TO220F

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Power - Max: 55W
Switching Energy: 141µJ (on), 215µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 15ns/36ns
Test Condition: 300V, 10A, 20 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

パッケージ: TO-220-3 Full Pack

在庫2,000

600V

16A

30A

2.8V @ 15V, 10A

55W

141µJ (on), 215µJ (off)

Standard

30nC

15ns/36ns

300V, 10A, 20 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

IRGS4062DTRLPBF

Infineon Technologies

IGBT DISCRETES

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫5,968

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

IRG4BC30KPBF

Infineon Technologies

IGBT 600V 28A 100W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 58A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Power - Max: 100W
Switching Energy: 360µJ (on), 510µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 26ns/130ns
Test Condition: 480V, 16A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫7,872

600V

28A

58A

2.7V @ 15V, 16A

100W

360µJ (on), 510µJ (off)

Standard

67nC

26ns/130ns

480V, 16A, 23 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IRG4RC10UDPBF

Infineon Technologies

IGBT 600V 8.5A 38W DPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8.5A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 38W
Switching Energy: 140µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 40ns/87ns
Test Condition: 480V, 5A, 100 Ohm, 15V
Reverse Recovery Time (trr): 28ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫7,616

600V

8.5A

34A

2.6V @ 15V, 5A

38W

140µJ (on), 120µJ (off)

Standard

15nC

40ns/87ns

480V, 5A, 100 Ohm, 15V

28ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

IXXK300N60C3

IXYS

IGBT 600V 510A 2300W TO264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 510A
Current - Collector Pulsed (Icm): 1075A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Power - Max: 2300W
Switching Energy: 3.35mJ (on), 1.9mJ (off)
Input Type: Standard
Gate Charge: 438nC
Td (on/off) @ 25°C: 50ns/160ns
Test Condition: 400V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXXK)

パッケージ: TO-264-3, TO-264AA

在庫7,680

600V

510A

1075A

2V @ 15V, 100A

2300W

3.35mJ (on), 1.9mJ (off)

Standard

438nC

50ns/160ns

400V, 100A, 1 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264 (IXXK)

APT30GT60BRG

Microsemi Corporation

IGBT 600V 64A 250W TO247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 64A
Current - Collector Pulsed (Icm): 110A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: 250W
Switching Energy: 525µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 12ns/225ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

パッケージ: TO-247-3

在庫5,872

600V

64A

110A

2.5V @ 15V, 30A

250W

525µJ (on), 600µJ (off)

Standard

145nC

12ns/225ns

400V, 30A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247 [B]

IXGK28N140B3H1

IXYS

IGBT 1400V 60A 300W TO264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1400V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Power - Max: 300W
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Input Type: Standard
Gate Charge: 88nC
Td (on/off) @ 25°C: 16ns/190ns
Test Condition: 960V, 28A, 5 Ohm, 15V
Reverse Recovery Time (trr): 350ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXGK)

パッケージ: TO-264-3, TO-264AA

在庫2,032

1400V

60A

150A

3.6V @ 15V, 28A

300W

3.6mJ (on), 3.9mJ (off)

Standard

88nC

16ns/190ns

960V, 28A, 5 Ohm, 15V

350ns

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264 (IXGK)

IXYP20N65C3D1M

IXYS

IGBT 650V 18A 50W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 18A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 50W
Switching Energy: 430µJ (on), 350µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 19ns/80ns
Test Condition: 400V, 20A, 20 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫7,984

650V

18A

105A

2.5V @ 15V, 20A

50W

430µJ (on), 350µJ (off)

Standard

30nC

19ns/80ns

400V, 20A, 20 Ohm, 15V

30ns

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220AB

IKW50N60TA

Infineon Technologies

IGBT 600V 80A 333W TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 333W
Switching Energy: 2.6mJ
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 26ns/299ns
Test Condition: 400V, 50A, 7 Ohm, 15V
Reverse Recovery Time (trr): 143ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

パッケージ: TO-247-3

在庫103,464

600V

80A

150A

2V @ 15V, 50A

333W

2.6mJ

Standard

310nC

26ns/299ns

400V, 50A, 7 Ohm, 15V

143ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

LGB8204ATI

Littelfuse Inc.

IGBT 430V 18A 115W D2PAK3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

AOK60B65H2AL

Alpha & Omega Semiconductor Inc.

IGBT 60A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 180 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Power - Max: 416 W
Switching Energy: 2.36mJ (on), 1.17mJ (off)
Input Type: Standard
Gate Charge: 84 nC
Td (on/off) @ 25°C: 35ns/168ns
Test Condition: 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr): 318 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

パッケージ: -

Request a Quote

650 V

120 A

180 A

2.5V @ 15V, 60A

416 W

2.36mJ (on), 1.17mJ (off)

Standard

84 nC

35ns/168ns

400V, 60A, 5Ohm, 15V

318 ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

FGD1240G2

onsemi

IGBT 600V DPAK-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3

パッケージ: -

在庫7,500

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK-3

HGTH12N50CID

Harris Corporation

12A, 500V, N CHANNEL IGBT WITH A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

RJP30L4DPE-00-J3

Renesas Electronics Corporation

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

SIGC54T60R3EX1SA3

Infineon Technologies

IGBT TRENCH FS 600V 100A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

Request a Quote

600 V

100 A

300 A

1.85V @ 15V, 100A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

IKB30N65ES5ATMA1

Infineon Technologies

IGBT TRENCH FS 650V 62A TO263-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 62 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 188 W
Switching Energy: 560µJ (on), 320µJ (off)
Input Type: Standard
Gate Charge: 70 nC
Td (on/off) @ 25°C: 17ns/124ns
Test Condition: 400V, 30A, 13Ohm, 15V
Reverse Recovery Time (trr): 75 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3

パッケージ: -

在庫11,544

650 V

62 A

120 A

1.7V @ 15V, 30A

188 W

560µJ (on), 320µJ (off)

Standard

70 nC

17ns/124ns

400V, 30A, 13Ohm, 15V

75 ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-3

IQFH55N04NM6ATMA1

Infineon Technologies

TRENCH <= 40V

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

RGTVX2TS65GC11

Rohm Semiconductor

IGBT TRENCH FLD 650V 111A TO247N

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 111 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Power - Max: 319 W
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Input Type: Standard
Gate Charge: 123 nC
Td (on/off) @ 25°C: 49ns/150ns
Test Condition: 400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247N

パッケージ: -

在庫1,254

650 V

111 A

240 A

1.9V @ 15V, 60A

319 W

2.08mJ (on), 1.15mJ (off)

Standard

123 nC

49ns/150ns

400V, 60A, 10Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247N

IXYH40N120C4

IXYS

IGBT DISCRETE TO-247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 230 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Power - Max: 680 W
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Input Type: Standard
Gate Charge: 92 nC
Td (on/off) @ 25°C: 21ns/140ns
Test Condition: 960V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr): 55 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

パッケージ: -

Request a Quote

1200 V

120 A

230 A

2.5V @ 15V, 32A

680 W

5.55mJ (on), 1.55mJ (off)

Standard

92 nC

21ns/140ns

960V, 32A, 5Ohm, 15V

55 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247 (IXTH)

IKFW75N60ETXKSA1

Infineon Technologies

IGBT TRENCH FS 600V 80A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 178 W
Switching Energy: 2.7mJ (on), 2.35J (off)
Input Type: Standard
Gate Charge: 440 nC
Td (on/off) @ 25°C: 33ns/340ns
Test Condition: 400V, 75A, 5Ohm, 15V
Reverse Recovery Time (trr): 107 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-AI

パッケージ: -

在庫600

600 V

80 A

225 A

2V @ 15V, 75A

178 W

2.7mJ (on), 2.35J (off)

Standard

440 nC

33ns/340ns

400V, 75A, 5Ohm, 15V

107 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-AI

MIW60N65RA-BP

Micro Commercial Co

IGBT TRENCH FS 650V 120A TO247AB

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Power - Max: 333 W
Switching Energy: 2.84mJ (on), 1.21mJ (off)
Input Type: Standard
Gate Charge: 240 nC
Td (on/off) @ 25°C: 18ns/163ns
Test Condition: 400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr): 42 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AB

パッケージ: -

Request a Quote

650 V

120 A

2.4V @ 15V, 60A

333 W

2.84mJ (on), 1.21mJ (off)

Standard

240 nC

18ns/163ns

400V, 60A, 10Ohm, 15V

42 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AB

SIGC25T60SNCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 44ns/324ns
Test Condition: 400V, 30A, 11Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

Request a Quote

600 V

30 A

90 A

2.5V @ 15V, 30A

-

Standard

-

44ns/324ns

400V, 30A, 11Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC11T60NCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): 30 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 20ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

Request a Quote

600 V

10 A

30 A

2.5V @ 15V, 10A

-

Standard

-

20ns/110ns

300V, 10A, 27Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG8CH15K10D	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,864	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXGC16N60C2D1	IXYS	IGBT 600V 20A 63W ISOPLUS220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Power - Max: 63W Switching Energy: 60µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 25ns/60ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	パッケージ: ISOPLUS220?	在庫3,104	600V	20A	100A	3V @ 15V, 12A	63W	60µJ (off)	Standard	32nC	25ns/60ns	400V, 12A, 22 Ohm, 15V	30ns	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
FGL60N100DTU	Fairchild/ON Semiconductor	IGBT 1000V 60A 176W TO264 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Power - Max: 176W Switching Energy: - Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.5µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	パッケージ: TO-264-3, TO-264AA	在庫7,616	1000V	60A	120A	2.9V @ 15V, 60A	176W	-	Standard	230nC	-	-	1.5µs	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264
HGTP12N60C3	Fairchild/ON Semiconductor	IGBT 600V 24A 104W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A Power - Max: 104W Switching Energy: 380µJ (on), 900µJ (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫2,016	600V	24A	96A	2V @ 15V, 12A	104W	380µJ (on), 900µJ (off)	Standard	48nC	-	-	-	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
SGW10N60RUFDTM	Fairchild/ON Semiconductor	IGBT 600V 16A 75W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A Power - Max: 75W Switching Energy: 141µJ (on), 215µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 15ns/36ns Test Condition: 300V, 10A, 20 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫12,180	600V	16A	30A	2.8V @ 15V, 10A	75W	141µJ (on), 215µJ (off)	Standard	30nC	15ns/36ns	300V, 10A, 20 Ohm, 15V	60ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
SGS10N60RUFTU	Fairchild/ON Semiconductor	IGBT 600V 16A 55W TO220F IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A Power - Max: 55W Switching Energy: 141µJ (on), 215µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 15ns/36ns Test Condition: 300V, 10A, 20 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	パッケージ: TO-220-3 Full Pack	在庫2,000	600V	16A	30A	2.8V @ 15V, 10A	55W	141µJ (on), 215µJ (off)	Standard	30nC	15ns/36ns	300V, 10A, 20 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
IRGS4062DTRLPBF	Infineon Technologies	IGBT DISCRETES IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫5,968	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRG4BC30KPBF	Infineon Technologies	IGBT 600V 28A 100W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫7,872	600V	28A	58A	2.7V @ 15V, 16A	100W	360µJ (on), 510µJ (off)	Standard	67nC	26ns/130ns	480V, 16A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IRG4RC10UDPBF	Infineon Technologies	IGBT 600V 8.5A 38W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 8.5A Current - Collector Pulsed (Icm): 34A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Power - Max: 38W Switching Energy: 140µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25°C: 40ns/87ns Test Condition: 480V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫7,616	600V	8.5A	34A	2.6V @ 15V, 5A	38W	140µJ (on), 120µJ (off)	Standard	15nC	40ns/87ns	480V, 5A, 100 Ohm, 15V	28ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
IXXK300N60C3	IXYS	IGBT 600V 510A 2300W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 510A Current - Collector Pulsed (Icm): 1075A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Power - Max: 2300W Switching Energy: 3.35mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 438nC Td (on/off) @ 25°C: 50ns/160ns Test Condition: 400V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXXK)	パッケージ: TO-264-3, TO-264AA	在庫7,680	600V	510A	1075A	2V @ 15V, 100A	2300W	3.35mJ (on), 1.9mJ (off)	Standard	438nC	50ns/160ns	400V, 100A, 1 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXXK)
APT30GT60BRG	Microsemi Corporation	IGBT 600V 64A 250W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 250W Switching Energy: 525µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 12ns/225ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	パッケージ: TO-247-3	在庫5,872	600V	64A	110A	2.5V @ 15V, 30A	250W	525µJ (on), 600µJ (off)	Standard	145nC	12ns/225ns	400V, 30A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
IXGK28N140B3H1	IXYS	IGBT 1400V 60A 300W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1400V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A Power - Max: 300W Switching Energy: 3.6mJ (on), 3.9mJ (off) Input Type: Standard Gate Charge: 88nC Td (on/off) @ 25°C: 16ns/190ns Test Condition: 960V, 28A, 5 Ohm, 15V Reverse Recovery Time (trr): 350ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXGK)	パッケージ: TO-264-3, TO-264AA	在庫2,032	1400V	60A	150A	3.6V @ 15V, 28A	300W	3.6mJ (on), 3.9mJ (off)	Standard	88nC	16ns/190ns	960V, 28A, 5 Ohm, 15V	350ns	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXGK)
IXYP20N65C3D1M	IXYS	IGBT 650V 18A 50W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 50W Switching Energy: 430µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 19ns/80ns Test Condition: 400V, 20A, 20 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫7,984	650V	18A	105A	2.5V @ 15V, 20A	50W	430µJ (on), 350µJ (off)	Standard	30nC	19ns/80ns	400V, 20A, 20 Ohm, 15V	30ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB
IKW50N60TA	Infineon Technologies	IGBT 600V 80A 333W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 333W Switching Energy: 2.6mJ Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 26ns/299ns Test Condition: 400V, 50A, 7 Ohm, 15V Reverse Recovery Time (trr): 143ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	パッケージ: TO-247-3	在庫103,464	600V	80A	150A	2V @ 15V, 50A	333W	2.6mJ	Standard	310nC	26ns/299ns	400V, 50A, 7 Ohm, 15V	143ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
LGB8204ATI	Littelfuse Inc.	IGBT 430V 18A 115W D2PAK3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOK60B65H2AL	Alpha & Omega Semiconductor Inc.	IGBT 60A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 120 A Current - Collector Pulsed (Icm): 180 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Power - Max: 416 W Switching Energy: 2.36mJ (on), 1.17mJ (off) Input Type: Standard Gate Charge: 84 nC Td (on/off) @ 25°C: 35ns/168ns Test Condition: 400V, 60A, 5Ohm, 15V Reverse Recovery Time (trr): 318 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	パッケージ: -	Request a Quote	650 V	120 A	180 A	2.5V @ 15V, 60A	416 W	2.36mJ (on), 1.17mJ (off)	Standard	84 nC	35ns/168ns	400V, 60A, 5Ohm, 15V	318 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
FGD1240G2	onsemi	IGBT 600V DPAK-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	パッケージ: -	在庫7,500	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK-3
HGTH12N50CID	Harris Corporation	12A, 500V, N CHANNEL IGBT WITH A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJP30L4DPE-00-J3	Renesas Electronics Corporation	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIGC54T60R3EX1SA3	Infineon Technologies	IGBT TRENCH FS 600V 100A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	100 A	300 A	1.85V @ 15V, 100A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IKB30N65ES5ATMA1	Infineon Technologies	IGBT TRENCH FS 650V 62A TO263-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 62 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 188 W Switching Energy: 560µJ (on), 320µJ (off) Input Type: Standard Gate Charge: 70 nC Td (on/off) @ 25°C: 17ns/124ns Test Condition: 400V, 30A, 13Ohm, 15V Reverse Recovery Time (trr): 75 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	パッケージ: -	在庫11,544	650 V	62 A	120 A	1.7V @ 15V, 30A	188 W	560µJ (on), 320µJ (off)	Standard	70 nC	17ns/124ns	400V, 30A, 13Ohm, 15V	75 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3
IQFH55N04NM6ATMA1	Infineon Technologies	TRENCH <= 40V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RGTVX2TS65GC11	Rohm Semiconductor	IGBT TRENCH FLD 650V 111A TO247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 111 A Current - Collector Pulsed (Icm): 240 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A Power - Max: 319 W Switching Energy: 2.08mJ (on), 1.15mJ (off) Input Type: Standard Gate Charge: 123 nC Td (on/off) @ 25°C: 49ns/150ns Test Condition: 400V, 60A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	パッケージ: -	在庫1,254	650 V	111 A	240 A	1.9V @ 15V, 60A	319 W	2.08mJ (on), 1.15mJ (off)	Standard	123 nC	49ns/150ns	400V, 60A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
IXYH40N120C4	IXYS	IGBT DISCRETE TO-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 120 A Current - Collector Pulsed (Icm): 230 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Power - Max: 680 W Switching Energy: 5.55mJ (on), 1.55mJ (off) Input Type: Standard Gate Charge: 92 nC Td (on/off) @ 25°C: 21ns/140ns Test Condition: 960V, 32A, 5Ohm, 15V Reverse Recovery Time (trr): 55 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	パッケージ: -	Request a Quote	1200 V	120 A	230 A	2.5V @ 15V, 32A	680 W	5.55mJ (on), 1.55mJ (off)	Standard	92 nC	21ns/140ns	960V, 32A, 5Ohm, 15V	55 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)
IKFW75N60ETXKSA1	Infineon Technologies	IGBT TRENCH FS 600V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 178 W Switching Energy: 2.7mJ (on), 2.35J (off) Input Type: Standard Gate Charge: 440 nC Td (on/off) @ 25°C: 33ns/340ns Test Condition: 400V, 75A, 5Ohm, 15V Reverse Recovery Time (trr): 107 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-AI	パッケージ: -	在庫600	600 V	80 A	225 A	2V @ 15V, 75A	178 W	2.7mJ (on), 2.35J (off)	Standard	440 nC	33ns/340ns	400V, 75A, 5Ohm, 15V	107 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-AI
MIW60N65RA-BP	Micro Commercial Co	IGBT TRENCH FS 650V 120A TO247AB IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 120 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Power - Max: 333 W Switching Energy: 2.84mJ (on), 1.21mJ (off) Input Type: Standard Gate Charge: 240 nC Td (on/off) @ 25°C: 18ns/163ns Test Condition: 400V, 60A, 10Ohm, 15V Reverse Recovery Time (trr): 42 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AB	パッケージ: -	Request a Quote	650 V	120 A	120 A	2.4V @ 15V, 60A	333 W	2.84mJ (on), 1.21mJ (off)	Standard	240 nC	18ns/163ns	400V, 60A, 10Ohm, 15V	42 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AB
SIGC25T60SNCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 44ns/324ns Test Condition: 400V, 30A, 11Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	30 A	90 A	2.5V @ 15V, 30A	-	-	Standard	-	44ns/324ns	400V, 30A, 11Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC11T60NCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 20ns/110ns Test Condition: 300V, 10A, 27Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	10 A	30 A	2.5V @ 15V, 10A	-	-	Standard	-	20ns/110ns	300V, 10A, 27Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die