トランジスタ - IGBT - シングル

IRG7PK42UD1MPBF

Infineon Technologies

IGBT 1200V DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

IKD10N60R

Infineon Technologies

IGBT 600V 20A 150W TO252-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
• Power - Max: 150W
• Switching Energy: 590µJ
• Input Type: Standard
• Gate Charge: 64nC
• Td (on/off) @ 25°C: 14ns/192ns
• Test Condition: 400V, 10A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 62ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRG4RC10UD

Infineon Technologies

IGBT 600V 8.5A 38W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 8.5A
• Current - Collector Pulsed (Icm): 34A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
• Power - Max: 38W
• Switching Energy: 140µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 15nC
• Td (on/off) @ 25°C: 40ns/87ns
• Test Condition: 480V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRG4PSH71UD

Infineon Technologies

IGBT 1200V 99A 350W SUPER247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 99A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
• Power - Max: 350W
• Switching Energy: 8.8mJ (on), 9.4mJ (off)
• Input Type: Standard
• Gate Charge: 380nC
• Td (on/off) @ 25°C: 46ns/250ns
• Test Condition: 960V, 70A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 110ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-274AA
• Supplier Device Package: SUPER-247 (TO-274AA)

パッケージ: TO-274AA

IXGA90N33TC

IXYS

IGBT 330V 90A 200W TO263AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 330V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
• Power - Max: 200W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 69nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRGC4069B

Infineon Technologies

IGBT CHIP WAFER

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

パッケージ: Die

IXYX50N170C

IXYS

IGBT 1700V 178A PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 178A
• Current - Collector Pulsed (Icm): 460A
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
• Power - Max: 1500W
• Switching Energy: 8.7mJ (on), 5.6mJ (off)
• Input Type: Standard
• Gate Charge: 260nC
• Td (on/off) @ 25°C: 20ns/180ns
• Test Condition: 850V, 50A, 1 Ohm, 15V
• Reverse Recovery Time (trr): 44ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

パッケージ: TO-247-3

APT100GT60B2RG

Microsemi Corporation

IGBT 600V 148A 500W SOT247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 148A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
• Power - Max: 500W
• Switching Energy: 3.25mJ (on), 3.125mJ (off)
• Input Type: Standard
• Gate Charge: 460nC
• Td (on/off) @ 25°C: 40ns/320ns
• Test Condition: 400V, 100A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: -

パッケージ: TO-247-3 Variant

IXGT24N60B

IXYS

IGBT 600V 24A TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

NGTG20N60L2TF1G

ON Semiconductor

IGBT 600V 40A 64W TO-3PF

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 105A
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
• Power - Max: 64W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 84nC
• Td (on/off) @ 25°C: 60ns/193ns
• Test Condition: 300V, 20A, 30 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: -

パッケージ: TO-3P-3 Full Pack

STGB4M65DF2

STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, M S

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 8A
• Current - Collector Pulsed (Icm): 16A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
• Power - Max: 68W
• Switching Energy: 40µJ (on), 136µJ (off)
• Input Type: Standard
• Gate Charge: 15.2nC
• Td (on/off) @ 25°C: 12ns/86ns
• Test Condition: 400V, 4A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 133ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT75GN60BG

Microsemi Corporation

IGBT 600V 155A 536W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 155A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
• Power - Max: 536W
• Switching Energy: 2500µJ (on), 2140µJ (off)
• Input Type: Standard
• Gate Charge: 485nC
• Td (on/off) @ 25°C: 47ns/385ns
• Test Condition: 400V, 75A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

パッケージ: TO-247-3

IHW15N120E1XKSA1

Infineon Technologies

IGBT 1200V 15A TO247-3

• IGBT Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
• Power - Max: 156W
• Switching Energy: 300µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

パッケージ: TO-247-3

IRG4BC15UD-SPBF

Infineon Technologies

IGBT 600V 14A 49W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 42A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
• Power - Max: 49W
• Switching Energy: 240µJ (on), 260µJ (off)
• Input Type: Standard
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 17ns/160ns
• Test Condition: 480V, 7.8A, 75 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT43GA90B

Microsemi Corporation

IGBT 900V 78A 337W TO-247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 78A
• Current - Collector Pulsed (Icm): 129A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
• Power - Max: 337W
• Switching Energy: 875µJ (on), 425µJ (off)
• Input Type: Standard
• Gate Charge: 116nC
• Td (on/off) @ 25°C: 12ns/82ns
• Test Condition: 600V, 25A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

パッケージ: TO-247-3

IXXK200N65B4

IXYS

IGBT 650V 370A 1150W TO264

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 370A
• Current - Collector Pulsed (Icm): 1000A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
• Power - Max: 1150W
• Switching Energy: 4.4mJ (on), 2.2mJ (off)
• Input Type: Standard
• Gate Charge: 553nC
• Td (on/off) @ 25°C: 62ns/245ns
• Test Condition: 400V, 100A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXXK)

パッケージ: TO-264-3, TO-264AA

IXYH40N120B3D1

IXYS

IGBT 1200V 86A 480W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 86A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
• Power - Max: 480W
• Switching Energy: 2.7mJ (on), 1.6mJ (off)
• Input Type: Standard
• Gate Charge: 87nC
• Td (on/off) @ 25°C: 22ns/177ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

パッケージ: TO-247-3

FGA40T65SHDF

Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
• Power - Max: 268W
• Switching Energy: 1.22mJ (on), 440µJ (off)
• Input Type: Standard
• Gate Charge: 68nC
• Td (on/off) @ 25°C: 18ns/64ns
• Test Condition: 400V, 40A, 6 Ohm, 15V
• Reverse Recovery Time (trr): 101ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

パッケージ: TO-3P-3, SC-65-3

FGA25S125P_SN00337

Fairchild/ON Semiconductor

IGBT 1250V 50A 250W TO-3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1250V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
• Power - Max: 250W
• Switching Energy: 1.09mJ (on), 580µJ (off)
• Input Type: Standard
• Gate Charge: 204nC
• Td (on/off) @ 25°C: 24ns/502ns
• Test Condition: 600V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

パッケージ: TO-3P-3, SC-65-3

ISL9V5036S3ST

Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO263AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 390V
• Current - Collector (Ic) (Max): 46A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
• Power - Max: 250W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 32nC
• Td (on/off) @ 25°C: -/10.8µs
• Test Condition: 300V, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXYH40N120C4H1

IXYS

IGBT TRENCH 1200V 110A TO247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 110 A
• Current - Collector Pulsed (Icm): 230 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
• Power - Max: 680 W
• Switching Energy: 5.55mJ (on), 1.55mJ (off)
• Input Type: Standard
• Gate Charge: 92 nC
• Td (on/off) @ 25°C: 21ns/140ns
• Test Condition: 960V, 32A, 5Ohm, 15V
• Reverse Recovery Time (trr): 380 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

パッケージ: -

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RGTV80TK65GVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 39A TO3PFM

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 39 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
• Power - Max: 85 W
• Switching Energy: 1.02mJ (on), 710µJ (off)
• Input Type: Standard
• Gate Charge: 81 nC
• Td (on/off) @ 25°C: 39ns/113ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PFM, SC-93-3
• Supplier Device Package: TO-3PFM

パッケージ: -

SIGC06T60EX7SA1

Infineon Technologies

IGBT TRENCH FS 600V 10A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

パッケージ: -

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SIGC121T60NR2CX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): 450 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 125ns/225ns
• Test Condition: 300V, 150A, 1.5Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

パッケージ: -

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RJH30E2DPP-00-T2

Renesas Electronics Corporation

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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STGP30H65DFB2

STMicroelectronics

IGBT 600V 60A 258W TO220AB

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 167 W
• Switching Energy: 270µJ (on), 310µJ (off)
• Input Type: Standard
• Gate Charge: 90 nC
• Td (on/off) @ 25°C: 18.4ns/71ns
• Test Condition: 400V, 30A, 6.8Ohm, 15V
• Reverse Recovery Time (trr): 115 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

パッケージ: -

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HGTD3N60B3

Harris Corporation

IGBT 600V 7A IPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 7 A
• Current - Collector Pulsed (Icm): 20 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
• Power - Max: 33.3 W
• Switching Energy: 66µJ (on), 88µJ (off)
• Input Type: Standard
• Gate Charge: 21 nC
• Td (on/off) @ 25°C: 18ns/105ns
• Test Condition: 480V, 3.5A, 82Ohm, 15V
• Reverse Recovery Time (trr): 16 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
• Supplier Device Package: IPAK

パッケージ: -

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FGI3040G2-F085

onsemi

ECOSPARK 2-400V IGNITION IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Current - Collector (Ic) (Max): 41 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
• Power - Max: 150 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 21 nC
• Td (on/off) @ 25°C: 900ns/4.8µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
• Supplier Device Package: TO-262 (I2PAK)

パッケージ: -