トランジスタ - IGBT - シングル

IRGP4269DPBF

Infineon Technologies

IGBT 600V TO247 COPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

IRG8CH10K10F

Infineon Technologies

IGBT 1200V 5A DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 30nC
• Td (on/off) @ 25°C: 20ns/160ns
• Test Condition: 600V, 5A, 47 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

パッケージ: Die

IRG7PH35UD1-EP

Infineon Technologies

IGBT 1200V 50A 179W TO247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
• Power - Max: 179W
• Switching Energy: 620µJ (off)
• Input Type: Standard
• Gate Charge: 130nC
• Td (on/off) @ 25°C: -/160ns
• Test Condition: 600V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

パッケージ: TO-247-3

IRG4BC30S-S

Infineon Technologies

IGBT 600V 34A 100W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 34A
• Current - Collector Pulsed (Icm): 68A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
• Power - Max: 100W
• Switching Energy: 260µJ (on), 3.45mJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 22ns/540ns
• Test Condition: 480V, 18A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXGR60N60C2G1

IXYS

IGBT 600V 75A ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

パッケージ: ISOPLUS247?

STGB7NB40LZT4

STMicroelectronics

IGBT 430V 14A 100W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 5V, 14A
• Power - Max: 100W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 22nC
• Td (on/off) @ 25°C: 900ns/4.4µs
• Test Condition: 300V, 46 Ohm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXSH35N140A

IXYS

IGBT 1400V 70A 300W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1400V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 140A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
• Power - Max: 300W
• Switching Energy: 4mJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 40ns/150ns
• Test Condition: 960V, 35A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

パッケージ: TO-247-3

IXGR40N120A2D1

IXYS

IGBT 1200V ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

パッケージ: ISOPLUS247?

IXGK64N60B3D1

IXYS

IGBT 600V 460W TO264

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 400A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
• Power - Max: 460W
• Switching Energy: 1.5mJ (on), 1mJ (off)
• Input Type: Standard
• Gate Charge: 168nC
• Td (on/off) @ 25°C: 25ns/138ns
• Test Condition: 480V, 50A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXGK)

パッケージ: TO-264-3, TO-264AA

IXGT20N140C3H1

IXYS

IGBT 1400V 42A 250W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1400V
• Current - Collector (Ic) (Max): 42A
• Current - Collector Pulsed (Icm): 108A
• Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
• Power - Max: 250W
• Switching Energy: 1.35mJ (on), 440µJ (off)
• Input Type: Standard
• Gate Charge: 88nC
• Td (on/off) @ 25°C: 19ns/110ns
• Test Condition: 700V, 20A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 70ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT15GN120BDQ1G

Microsemi Corporation

IGBT 1200V 45A 195W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 45A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 195W
• Switching Energy: 410µJ (on), 950µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: 10ns/150ns
• Test Condition: 800V, 15A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

パッケージ: TO-247-3

IXGH48N60A3D1

IXYS

IGBT 600V 300W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
• Power - Max: 300W
• Switching Energy: 950µJ (on), 2.9mJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 25ns/334ns
• Test Condition: 480V, 32A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

パッケージ: TO-247-3

NGTB30N60L2WG

ON Semiconductor

IGBT 600V 30A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
• Power - Max: 225W
• Switching Energy: 310µJ (on), 1.14mJ (off)
• Input Type: Standard
• Gate Charge: 166nC
• Td (on/off) @ 25°C: 100ns/390ns
• Test Condition: 300V, 30A, 30 Ohm, 15V
• Reverse Recovery Time (trr): 70ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

パッケージ: TO-247-3

STGF8NC60KD

STMicroelectronics

IGBT 600V 7A 24W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 7A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
• Power - Max: 24W
• Switching Energy: 55µJ (on), 85µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 17ns/72ns
• Test Condition: 390V, 3A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 23.5ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

パッケージ: TO-220-3 Full Pack

STGB3HF60HD

STMicroelectronics

IGBT 600V 7.5A D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 7.5A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 1.5A
• Power - Max: 38W
• Switching Energy: 19µJ (on), 12µJ (off)
• Input Type: Standard
• Gate Charge: 12nC
• Td (on/off) @ 25°C: 11ns/60ns
• Test Condition: 400V, 1.5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 85ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGW15H120F2

STMicroelectronics

IGBT H-SERIES 1200V 15A TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
• Power - Max: 259W
• Switching Energy: 380µJ (on), 370µJ (off)
• Input Type: Standard
• Gate Charge: 67nC
• Td (on/off) @ 25°C: 23ns/111ns
• Test Condition: 600V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

パッケージ: TO-247-3

IRGIB15B60KD1P

Infineon Technologies

IGBT 600V 19A 52W TO220FP

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 19A
• Current - Collector Pulsed (Icm): 38A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
• Power - Max: 52W
• Switching Energy: 127µJ (on), 334µJ (off)
• Input Type: Standard
• Gate Charge: 56nC
• Td (on/off) @ 25°C: 30ns/173ns
• Test Condition: 400V, 15A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 67ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

パッケージ: TO-220-3 Full Pack

APT30GT60BRDQ2G

Microsemi Corporation

IGBT 600V 64A 250W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 64A
• Current - Collector Pulsed (Icm): 110A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: 250W
• Switching Energy: 80µJ (on), 605µJ (off)
• Input Type: Standard
• Gate Charge: 7.5nC
• Td (on/off) @ 25°C: 12ns/225ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

パッケージ: TO-247-3

APT50GF120LRG

Microsemi Corporation

IGBT 1200V 135A 781W TO264

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 135A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
• Power - Max: 781W
• Switching Energy: 3.6mJ (on), 2.64mJ (off)
• Input Type: Standard
• Gate Charge: 340nC
• Td (on/off) @ 25°C: 25ns/260ns
• Test Condition: 800V, 50A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 [L]

パッケージ: TO-264-3, TO-264AA

APT35GN120L2DQ2G

Microsemi Corporation

IGBT 1200V 94A 379W TO264

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 94A
• Current - Collector Pulsed (Icm): 105A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
• Power - Max: 379W
• Switching Energy: 2.315mJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 24ns/300ns
• Test Condition: 800V, 35A, 2.2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: -

パッケージ: TO-264-3, TO-264AA

IHW30N120R3FKSA1

Infineon Technologies

IGBT 1200V 60A 349W TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
• Power - Max: 349W
• Switching Energy: 1.47mJ (off)
• Input Type: Standard
• Gate Charge: 263nC
• Td (on/off) @ 25°C: -/326ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

パッケージ: TO-247-3

FGD5T120SH

Fairchild/ON Semiconductor

IGBT 1200V 5A FS3 DPAK

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): 12.5A
• Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A
• Power - Max: 69W
• Switching Energy: 247µJ (on), 94µJ (off)
• Input Type: Standard
• Gate Charge: 6.7nC
• Td (on/off) @ 25°C: 4.8ns/24.8ns
• Test Condition: 600V, 5A, 30 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRG4PH40UDPBF

Infineon Technologies

IGBT 1200V 41A 160W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 41A
• Current - Collector Pulsed (Icm): 82A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
• Power - Max: 160W
• Switching Energy: 1.8mJ (on), 1.93mJ (off)
• Input Type: Standard
• Gate Charge: 86nC
• Td (on/off) @ 25°C: 46ns/97ns
• Test Condition: 800V, 21A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 63ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

パッケージ: TO-247-3

IRG4PC40WPBF

Infineon Technologies

IGBT 600V 40A 160W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 160W
• Switching Energy: 110µJ (on), 230µJ (off)
• Input Type: Standard
• Gate Charge: 98nC
• Td (on/off) @ 25°C: 27ns/100ns
• Test Condition: 480V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

パッケージ: TO-247-3

STG5592QTR

STMicroelectronics

Linear IC's

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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SIGC42T60SNCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 57ns/380ns
• Test Condition: 400V, 50A, 6.8Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

パッケージ: -

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PCISL9R1560W

onsemi

IGBT STEALTH DUAL 600V 30A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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HGTD3N60B3S

Harris Corporation

7A, 600V, UFS N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 7 A
• Current - Collector Pulsed (Icm): 20 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
• Power - Max: 33.3 W
• Switching Energy: 66µJ (on), 88µJ (off)
• Input Type: Standard
• Gate Charge: 21 nC
• Td (on/off) @ 25°C: 18ns/105ns
• Test Condition: 480V, 3.5A, 82Ohm, 15V
• Reverse Recovery Time (trr): 16 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

パッケージ: -

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