ページ 24 - トランジスタ - IGBT - シングル | ディスクリート半導体製品 | Heisener Electronics
連絡先
SalesDept@heisener.com 86-755-83210559-843
ログイン/登録
Language Translation

* Please refer to the English Version as our Official Version.

BOM
カート 0

トランジスタ - IGBT - シングル

レコード 4,424
ページ  24/148
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8CH29K10D
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,976
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG7PK42UD1PBF
Infineon Technologies

IGBT 1200V DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫7,952
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGI4062DPBF
Infineon Technologies

IGBT 600V 22A 48W TO220AB

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 1.58V @ 15V, 12A
  • Power - Max: 48W
  • Switching Energy: 31µJ (on), 183µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 41ns/100ns
  • Test Condition: 400V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 56ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
パッケージ: TO-220-3 Full Pack
在庫3,632
600V
22A
44A
1.58V @ 15V, 12A
48W
31µJ (on), 183µJ (off)
Standard
48nC
41ns/100ns
400V, 12A, 10 Ohm, 15V
56ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IRG4RC10SPBF
Infineon Technologies

IGBT 600V 14A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 25ns/630ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫2,112
600V
14A
18A
1.8V @ 15V, 8A
38W
140µJ (on), 2.58mJ (off)
Standard
15nC
25ns/630ns
480V, 8A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGR35N120C
IXYS

IGBT 1200V 70A 200W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
  • Power - Max: 200W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 50ns/150ns
  • Test Condition: 960V, 35A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
パッケージ: ISOPLUS247?
在庫3,536
1200V
70A
140A
4V @ 15V, 35A
200W
3mJ (off)
Standard
170nC
50ns/150ns
960V, 35A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGH20N60AU1
IXYS

IGBT 600V 40A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫3,424
600V
40A
-
3V @ 15V, 20A
150W
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
IXSH30N60C
IXYS

IGBT 600V 55A 200W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 480V, 30A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
パッケージ: TO-247-3
在庫4,912
600V
55A
110A
2.5V @ 15V, 30A
200W
700µJ (off)
Standard
100nC
30ns/90ns
480V, 30A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
hot IXGH60N60C2
IXYS

IGBT 600V 75A 480W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 480W
  • Switching Energy: 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 146nC
  • Td (on/off) @ 25°C: 18ns/95ns
  • Test Condition: 400V, 50A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫79,092
600V
75A
300A
2.5V @ 15V, 50A
480W
480µJ (off)
Standard
146nC
18ns/95ns
400V, 50A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGH40N60B2
IXYS

IGBT 600V 75A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 18ns/130ns
  • Test Condition: 400V, 30A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫6,800
600V
75A
200A
1.7V @ 15V, 30A
300W
400µJ (off)
Standard
100nC
18ns/130ns
400V, 30A, 3.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot IXSH20N60B2D1
IXYS

IGBT 600V 35A 190W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
  • Power - Max: 190W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 30ns/116ns
  • Test Condition: 480V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
パッケージ: TO-247-3
在庫94,272
600V
35A
60A
2.5V @ 15V, 16A
190W
380µJ (off)
Standard
33nC
30ns/116ns
480V, 16A, 10 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
hot IRGB4060DPBF
Infineon Technologies

IGBT 600V 16A 99W TO220AB

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
  • Power - Max: 99W
  • Switching Energy: 70µJ (on), 145µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 30ns/95ns
  • Test Condition: 400V, 8A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫18,336
600V
16A
32A
1.85V @ 15V, 8A
99W
70µJ (on), 145µJ (off)
Standard
19nC
30ns/95ns
400V, 8A, 47 Ohm, 15V
60ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRGB4B60KD1PBF
Infineon Technologies

IGBT 600V 11A 63W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 63W
  • Switching Energy: 73µJ (on), 47µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 22ns/100ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 93ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫4,992
600V
11A
22A
2.5V @ 15V, 4A
63W
73µJ (on), 47µJ (off)
Standard
12nC
22ns/100ns
400V, 4A, 100 Ohm, 15V
93ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGR32N170H1
IXYS

IGBT 1700V 38A 200W ISOPLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 38A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 21A
  • Power - Max: 200W
  • Switching Energy: 10.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 45ns/270ns
  • Test Condition: 1360V, 21A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 230ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
パッケージ: ISOPLUS247?
在庫4,688
1700V
38A
200A
3.5V @ 15V, 21A
200W
10.6mJ (off)
Standard
155nC
45ns/270ns
1360V, 21A, 2.7 Ohm, 15V
230ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
APT50GF120B2RG
Microsemi Corporation

IGBT 1200V 135A 781W TMAX

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 135A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
  • Power - Max: 781W
  • Switching Energy: 3.6mJ (on), 2.64mJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 25ns/260ns
  • Test Condition: 800V, 50A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
パッケージ: TO-247-3 Variant
在庫3,504
1200V
135A
150A
3V @ 15V, 50A
781W
3.6mJ (on), 2.64mJ (off)
Standard
340nC
25ns/260ns
800V, 50A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXGK72N60A3H1
IXYS

IGBT 600V 75A 540W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
  • Power - Max: 540W
  • Switching Energy: 1.4mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 31ns/320ns
  • Test Condition: 480V, 50A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
パッケージ: TO-264-3, TO-264AA
在庫2,720
600V
75A
400A
1.35V @ 15V, 60A
540W
1.4mJ (on), 3.5mJ (off)
Standard
230nC
31ns/320ns
480V, 50A, 3 Ohm, 15V
140ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IXBH10N170
IXYS

IGBT 1700V 20A 140W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
  • Power - Max: 140W
  • Switching Energy: 6mJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 35ns/500ns
  • Test Condition: 1360V, 10A, 56 Ohm, 15V
  • Reverse Recovery Time (trr): 360ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
パッケージ: TO-247-3
在庫6,320
1700V
20A
40A
3.8V @ 15V, 10A
140W
6mJ (off)
Standard
30nC
35ns/500ns
1360V, 10A, 56 Ohm, 15V
360ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXBH)
IXA20I1200PB
IXYS

IGBT 1200V 33A 130W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 38A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 165W
  • Switching Energy: 1.65mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 47nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 15A, 56 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫3,488
1200V
38A
-
2.1V @ 15V, 15A
165W
1.65mJ (on), 1.7mJ (off)
Standard
47nC
-
600V, 15A, 56 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTD21T65F2SWK
ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 45A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫7,328
650V
-
200A
1.9V @ 15V, 45A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
hot FGAF40N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 40A 100W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 100W
  • Switching Energy: 470µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 300V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-94
  • Supplier Device Package: TO-3PF
パッケージ: SC-94
在庫24,732
600V
40A
160A
3V @ 15V, 20A
100W
470µJ (on), 130µJ (off)
Standard
77nC
15ns/65ns
300V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
SC-94
TO-3PF
STGW75M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 468W
  • Switching Energy: 690µJ (on), 2.54mJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 47ns/125ns
  • Test Condition: 400V, 75A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 165ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫6,096
650V
120A
225A
2.1V @ 15V, 75A
468W
690µJ (on), 2.54mJ (off)
Standard
225nC
47ns/125ns
400V, 75A, 3.3 Ohm, 15V
165ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
SLA5222
Sanken

IGBT 600V 30A PFC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
パッケージ: 12-SIP, Exposed Tab
在庫7,920
600V
30A
-
-
-
-
Standard
-
-
-
-
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
STGW25S120DF3
STMicroelectronics

IGBT 1200V 25A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 375W
  • Switching Energy: 830µJ (on), 2.37mJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 31ns/147ns
  • Test Condition: 600V, 25A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 265ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫6,900
1200V
50A
100A
2.1V @ 15V, 25A
375W
830µJ (on), 2.37mJ (off)
Standard
80nC
31ns/147ns
600V, 25A, 15 Ohm, 15V
265ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGFW20H65FB
STMicroelectronics

IGBT 650V 40A 52W TO3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 52W
  • Switching Energy: 77µJ (on), 170µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 30ns/139ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PF
パッケージ: TO-3PFM, SC-93-3
在庫7,860
650V
40A
80A
2V @ 15V, 20A
52W
77µJ (on), 170µJ (off)
Standard
120nC
30ns/139ns
400V, 20A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PF
hot HGTG10N120BND
Fairchild/ON Semiconductor

IGBT 1200V 35A 298W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 298W
  • Switching Energy: 850µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 23ns/165ns
  • Test Condition: 960V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫85,680
1200V
35A
80A
2.7V @ 15V, 10A
298W
850µJ (on), 800µJ (off)
Standard
100nC
23ns/165ns
960V, 10A, 10 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
RGW80TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 78A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 78 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 214 W
  • Switching Energy: 760µJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 44ns/143ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
パッケージ: -
在庫951
650 V
78 A
160 A
1.9V @ 15V, 40A
214 W
760µJ (on), 720µJ (off)
Standard
110 nC
44ns/143ns
400V, 40A, 10Ohm, 15V
92 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
AIKW50N65RF5XKSA1
Infineon Technologies

SIC_DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 250 W
  • Switching Energy: 310µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 109 nC
  • Td (on/off) @ 25°C: 20ns/156ns
  • Test Condition: 400V, 25A, 12Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: -
Request a Quote
650 V
80 A
150 A
2.1V @ 15V, 50A
250 W
310µJ (on), 120µJ (off)
Standard
109 nC
20ns/156ns
400V, 25A, 12Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IGTH20N40D
Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3 Isolated Tab, TO-218AC
  • Supplier Device Package: TO-218 Isolated
パッケージ: -
Request a Quote
400 V
20 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-218-3 Isolated Tab, TO-218AC
TO-218 Isolated
ISL9V5045S3ST-F085
onsemi

IGBT 480V 51A 300W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 480 V
  • Current - Collector (Ic) (Max): 51 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 300 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
パッケージ: -
Request a Quote
480 V
51 A
-
1.6V @ 4V, 10A
300 W
-
Logic
32 nC
-/10.8µs
300V, 1kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IXYN120N65C3D1
IXYS

IGBT PT 650V 190A SOT227B

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 190 A
  • Current - Collector Pulsed (Icm): 620 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
  • Power - Max: 830 W
  • Switching Energy: 1.25mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 265 nC
  • Td (on/off) @ 25°C: 28ns/127ns
  • Test Condition: 400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
パッケージ: -
Request a Quote
650 V
190 A
620 A
2.8V @ 15V, 100A
830 W
1.25mJ (on), 500µJ (off)
Standard
265 nC
28ns/127ns
400V, 50A, 2Ohm, 15V
29 ns
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
SIGC07T60SNCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die