ページ 38 - トランジスタ - IGBT - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - IGBT - シングル

レコード 4,424
ページ  38/158
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説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SGD04N60BUMA1
Infineon Technologies

IGBT 600V 9.4A 50W TO252-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9.4A
  • Current - Collector Pulsed (Icm): 19A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
  • Power - Max: 50W
  • Switching Energy: 131µJ
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 22ns/237ns
  • Test Condition: 400V, 4A, 67 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫4,368
600V
9.4A
19A
2.4V @ 15V, 4A
50W
131µJ
Standard
24nC
22ns/237ns
400V, 4A, 67 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
hot IRGPC40U
Infineon Technologies

IGBT UFAST 600V 40A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫15,828
600V
40A
-
3V @ 15V, 20A
160W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
STGF10NC60SD
STMicroelectronics

IGBT 600V 10A 25W TP220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
  • Power - Max: 25W
  • Switching Energy: 60µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 19ns/160ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
パッケージ: TO-220-3 Full Pack
在庫6,768
600V
10A
25A
1.65V @ 15V, 5A
25W
60µJ (on), 340µJ (off)
Standard
18nC
19ns/160ns
390V, 5A, 10 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
hot IXGH24N60CD1
IXYS

IGBT 600V 48A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 15ns/75ns
  • Test Condition: 480V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫103,464
600V
48A
80A
2.5V @ 15V, 24A
150W
240µJ (off)
Standard
55nC
15ns/75ns
480V, 24A, 10 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGA12N60C
IXYS

IGBT 600V 24A 100W TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 20ns/60ns
  • Test Condition: 480V, 12A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫6,768
600V
24A
48A
2.7V @ 15V, 12A
100W
90µJ (off)
Standard
32nC
20ns/60ns
480V, 12A, 18 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
hot FGPF30N30
Fairchild/ON Semiconductor

IGBT 300V 46W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 10A
  • Power - Max: 46W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 39nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
パッケージ: TO-220-3 Full Pack
在庫215,064
300V
-
80A
1.5V @ 15V, 10A
46W
-
Standard
39nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
NGB8206NG
ON Semiconductor

IGBT 390V 20A 150W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/5µs
  • Test Condition: 300V, 9A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫5,504
390V
20A
50A
1.9V @ 4.5V, 20A
150W
-
Logic
-
-/5µs
300V, 9A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot SGH80N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 80A 195W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
  • Power - Max: 195W
  • Switching Energy: 570µJ (on), 590µJ (off)
  • Input Type: Standard
  • Gate Charge: 175nC
  • Td (on/off) @ 25°C: 23ns/90ns
  • Test Condition: 300V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
パッケージ: TO-3P-3, SC-65-3
在庫6,640
600V
80A
220A
2.6V @ 15V, 40A
195W
570µJ (on), 590µJ (off)
Standard
175nC
23ns/90ns
300V, 40A, 5 Ohm, 15V
95ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot SGF40N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 40A 100W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
  • Power - Max: 100W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 97nC
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 300V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-94
  • Supplier Device Package: TO-3PF
パッケージ: SC-94
在庫14,772
600V
40A
160A
2.6V @ 15V, 20A
100W
160µJ (on), 200µJ (off)
Standard
97nC
15ns/65ns
300V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
SC-94
TO-3PF
AIKB20N60CTATMA1
Infineon Technologies

IC DISCRETE 600V TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
  • Power - Max: 156W
  • Switching Energy: 310µJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 18ns/199ns
  • Test Condition: 600V, 20A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫2,784
600V
40A
60A
2.05V @ 15V, 20A
156W
310µJ (on), 460µJ (off)
Standard
120nC
18ns/199ns
600V, 20A, 12 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IXGH10N100
IXYS

IGBT 1000V 20A 100W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 10A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫4,272
1000V
20A
-
3.5V @ 15V, 10A
100W
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
NGTB75N65FL2WAG
ON Semiconductor

IGBT FIELD STOP 650V TO247-4

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 536W
  • Switching Energy: 610µJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 23ns/157ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
パッケージ: TO-247-4
在庫7,760
650V
200A
200A
2V @ 15V, 75A
536W
610µJ (on), 1.2mJ (off)
Standard
310nC
23ns/157ns
400V, 75A, 10 Ohm, 15V
90ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
hot STGD5NB120SZT4
STMicroelectronics

IGBT 1200V 10A 75W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 10A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
  • Power - Max: 75W
  • Switching Energy: 2.59mJ (on), 9mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 690ns/12.1µs
  • Test Condition: 960V, 5A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫21,600
1200V
10A
10A
2V @ 15V, 5A
75W
2.59mJ (on), 9mJ (off)
Standard
-
690ns/12.1µs
960V, 5A, 1 kOhm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
APT35GA90B
Microsemi Corporation

IGBT 900V 63A 290W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 63A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
  • Power - Max: 290W
  • Switching Energy: 642µJ (on), 382µJ (off)
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 12ns/104ns
  • Test Condition: 600V, 18A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
パッケージ: TO-247-3
在庫7,408
900V
63A
105A
3.1V @ 15V, 18A
290W
642µJ (on), 382µJ (off)
Standard
84nC
12ns/104ns
600V, 18A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IRGP4069DPBF
Infineon Technologies

IGBT 600V 76A 268W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 76A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 35A
  • Power - Max: 268W
  • Switching Energy: 390µJ (on), 632µJ (off)
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: 46ns/105ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 120ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫14,310
600V
76A
105A
1.85V @ 15V, 35A
268W
390µJ (on), 632µJ (off)
Standard
69nC
46ns/105ns
400V, 35A, 10 Ohm, 15V
120ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4PH40UPBF
Infineon Technologies

IGBT 1200V 41A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 82A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
  • Power - Max: 160W
  • Switching Energy: 1.04mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 86nC
  • Td (on/off) @ 25°C: 24ns/220ns
  • Test Condition: 960V, 21A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫5,200
1200V
41A
82A
3.1V @ 15V, 21A
160W
1.04mJ (on), 3.4mJ (off)
Standard
86nC
24ns/220ns
960V, 21A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IKD15N60RFATMA1
Infineon Technologies

IGBT TRENCH FS 600V 30A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 250 W
  • Switching Energy: 270µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 13ns/160ns
  • Test Condition: 400V, 15A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 74 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
パッケージ: -
在庫16,824
600 V
30 A
45 A
2.5V @ 15V, 15A
250 W
270µJ (on), 250µJ (off)
Standard
90 nC
13ns/160ns
400V, 15A, 15Ohm, 15V
74 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
IKA10N65ET6XKSA2
Infineon Technologies

IGBT TRENCH FS 650V 15A TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 42.5 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
  • Power - Max: 40 W
  • Switching Energy: 200µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 27 nC
  • Td (on/off) @ 25°C: 30ns/106ns
  • Test Condition: 400V, 8.5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 51 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3-FP
パッケージ: -
在庫1,500
650 V
15 A
42.5 A
1.9V @ 15V, 8.5A
40 W
200µJ (on), 70µJ (off)
Standard
27 nC
30ns/106ns
400V, 8.5A, 47Ohm, 15V
51 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3-FP
IHW40N60RFFKSA1
Infineon Technologies

IGBT TRENCH 600V 80A TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 305 W
  • Switching Energy: 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 220 nC
  • Td (on/off) @ 25°C: -/175ns
  • Test Condition: 400V, 40A, 5.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
パッケージ: -
Request a Quote
600 V
80 A
120 A
2.4V @ 15V, 40A
305 W
560µJ (off)
Standard
220 nC
-/175ns
400V, 40A, 5.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
SIGC07T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 6A, 54Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
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600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
21ns/110ns
300V, 6A, 54Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IGC07T120T8LX1SA2
Infineon Technologies

IGBT 1200V 4A SAWN ON FOIL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 12 A
  • Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 4A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
1200 V
-
12 A
2.02V @ 15V, 4A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
FGH25T120SMD-F155
onsemi

IGBT TRENCH FS 1200V 50A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 428 W
  • Switching Energy: 1.74mJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 225 nC
  • Td (on/off) @ 25°C: 40ns/490ns
  • Test Condition: 600V, 25A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: -
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1200 V
50 A
100 A
2.4V @ 15V, 25A
428 W
1.74mJ (on), 560µJ (off)
Standard
225 nC
40ns/490ns
600V, 25A, 23Ohm, 15V
60 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
HGTP7N60A4_NL
Fairchild Semiconductor

IGBT, 34A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 34 A
  • Current - Collector Pulsed (Icm): 56 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125 W
  • Switching Energy: 55µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 11ns/100ns
  • Test Condition: 390V, 7A, 25Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
パッケージ: -
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600 V
34 A
56 A
2.7V @ 15V, 7A
125 W
55µJ (on), 60µJ (off)
Standard
37 nC
11ns/100ns
390V, 7A, 25Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
IXGA30N120B3-TRL
IXYS

IXGA30N120B3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
  • Power - Max: 300 W
  • Switching Energy: 3.47mJ (on), 2.16mJ (off)
  • Input Type: Standard
  • Gate Charge: 87 nC
  • Td (on/off) @ 25°C: 16ns/127ns
  • Test Condition: 960V, 30A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 37 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
パッケージ: -
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1200 V
60 A
150 A
3.5V @ 15V, 30A
300 W
3.47mJ (on), 2.16mJ (off)
Standard
87 nC
16ns/127ns
960V, 30A, 5Ohm, 15V
37 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
SIGC07T60SNCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IGQ120N120S7XKSA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫729
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RBN50H65T1FPQ-A0-CB0
Renesas Electronics Corporation

IGBT TRENCH 650V 100A TO247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 250 W
  • Switching Energy: 830µJ (on), 670µJ (off)
  • Input Type: Standard
  • Gate Charge: 36 nC
  • Td (on/off) @ 25°C: 20ns/93ns
  • Test Condition: 400V, 50A, 16Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
パッケージ: -
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650 V
100 A
-
2V @ 15V, 50A
250 W
830µJ (on), 670µJ (off)
Standard
36 nC
20ns/93ns
400V, 50A, 16Ohm, 15V
65 ns
175°C (TJ)
Through Hole
TO-247-3
TO-247A
RGW80TS65EHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 214 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 43ns/148ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 86 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
パッケージ: -
在庫1,350
650 V
80 A
160 A
1.9V @ 15V, 40A
214 W
-
Standard
110 nC
43ns/148ns
400V, 20A, 10Ohm, 15V
86 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N