ページ 41 - トランジスタ - JFET | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MX2N4392	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,312	-	-	-	-	-	-	-	-	-	-	-	-
2N5114	Vishay Siliconix	JFET P-CH 30V TO-206AA FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	パッケージ: TO-206AA, TO-18-3 Metal Can	在庫5,248	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
TF408-3-TL-H	ON Semiconductor	JFET N-CH 10MA 30MW USFP FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V Current Drain (Id) - Max: 10mA Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Resistance - RDS(On): - Power - Max: 30mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-USFP	パッケージ: 3-SMD, Flat Leads	在庫3,440	-	-	1.2mA @ 10V	10mA	180mV @ 1µA	4pF @ 10V	-	30mW	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-USFP
2SK715W	ON Semiconductor	JFET N-CH 50MA 300MW SPA FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 15V Current - Drain (Idss) @ Vds (Vgs=0): 14.5mA @ 5V Current Drain (Id) - Max: 50mA Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: 125°C (TJ) Mounting Type: Through Hole Package / Case: SC-72 Supplier Device Package: 3-SPA	パッケージ: SC-72	在庫4,448	-	15V	14.5mA @ 5V	50mA	600mV @ 100µA	10pF @ 5V	-	300mW	125°C (TJ)	Through Hole	SC-72	3-SPA
J112RL1	ON Semiconductor	JFET N-CH 35V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 50 Ohm Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫5,824	35V	-	5mA @ 15V	-	1V @ 1µA	-	50 Ohm	350mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BFR30LT1G	ON Semiconductor	JFET N-CH 225MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Resistance - RDS(On): - Power - Max: 225mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫4,048	-	25V	4mA @ 10V	-	5V @ 0.5nA	5pF @ 10V	-	225mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
J271	Fairchild/ON Semiconductor	JFET P-CH 30V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫7,424	30V	-	6mA @ 15V	-	1.5V @ 1nA	-	-	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
PN5432	Fairchild/ON Semiconductor	JFET N-CH 25V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS) Resistance - RDS(On): 5 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫6,608	25V	-	150mA @ 15V	-	4V @ 3nA	30pF @ 10V (VGS)	5 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J201_D74Z	Fairchild/ON Semiconductor	JFET N-CH 40V 0.625W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫3,296	40V	-	200µA @ 20V	-	300mV @ 10nA	-	-	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5638	Fairchild/ON Semiconductor	JFET N-CH 30V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS) Resistance - RDS(On): 30 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA)	在庫9,912	30V	-	50mA @ 20V	-	-	10pF @ 12V (VGS)	30 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J113,126	NXP	JFET N-CH 40V 400MW TO92-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS) Resistance - RDS(On): 100 Ohm Power - Max: 400mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫4,240	40V	40V	2mA @ 15V	-	500mV @ 1µA	6pF @ 10V (VGS)	100 Ohm	400mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BSR56,215	NXP	JFET N-CH 40V 0.25W SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V Current Drain (Id) - Max: 20mA Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 25 Ohm Power - Max: 250mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫2,032	40V	40V	50mA @ 15V	20mA	4V @ 0.5nA	-	25 Ohm	250mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
SMMBF4393LT1G	ON Semiconductor	JFET N-CH 30V 0.225W SOT23-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS) Resistance - RDS(On): 100 Ohm Power - Max: 225mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫36,000	30V	30V	30mA @ 15V	-	3V @ 10nA	14pF @ 15V (VGS)	100 Ohm	225mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MMBFJ113	Fairchild/ON Semiconductor	JFET N-CH 35V 350MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 100 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫1,467,984	35V	-	2mA @ 15V	-	500mV @ 1µA	-	100 Ohm	350mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
LS5912-TO-71-6L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 25V TO71 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 25 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Resistance - RDS(On): - Power - Max: 500 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Metal Can Supplier Device Package: TO-71	パッケージ: -	在庫1,500	25 V	-	7 mA @ 10 V	-	1 V @ 1 nA	5pF @ 10V	-	500 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-71-6 Metal Can	TO-71
SMP152	InterFET	JFET N-Channel -20V Low Noise FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 20 V Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.2 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Resistance - RDS(On): 42 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: -	Request a Quote	-	20 V	14 mA @ 10 V	-	1.2 V @ 1 nA	15pF @ 10V	42 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
2N2608UB-TR	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Resistance - RDS(On): - Power - Max: 300 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	パッケージ: -	Request a Quote	30 V	-	1 mA @ 5 V	-	750 mV @ 1 µA	10pF @ 5V	-	300 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
CMPFJ175-PBFREE	Central Semiconductor Corp	IC JFET P-CH SOT23-3 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SST201-SOT-23-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 40V SOT23-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V Resistance - RDS(On): - Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: -	在庫16,689	40 V	-	200 µA @ 15 V	-	300 mV @ 10 nA	4.5pF @ 15V	-	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
NTE460	NTE Electronics, Inc	JFET P-CH 20V TO72 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 20 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V Resistance - RDS(On): 800 Ohms Power - Max: 300 mW Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	パッケージ: -	Request a Quote	20 V	-	2 mA @ 10 V	-	-	20pF @ 10V	800 Ohms	300 mW	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
PF5301-TO-92-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 30V TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 300 mW Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	パッケージ: -	在庫3,018	30 V	-	30 µA @ 10 V	-	3 V @ 1 nA	3pF @ 10V	-	300 mW	-55°C ~ 135°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
MQ2N4093UB-TR	Microchip Technology	JFET N-CH 40V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 80 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	パッケージ: -	Request a Quote	40 V	40 V	8 mA @ 20 V	-	-	16pF @ 20V	80 Ohms	360 mW	-65°C ~ 175°C (TJ)	Surface Mount	3-SMD, No Lead	UB

MX2N4392

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,312

-

2N5114

Vishay Siliconix

JFET P-CH 30V TO-206AA

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

パッケージ: TO-206AA, TO-18-3 Metal Can

在庫5,248

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

TF408-3-TL-H

ON Semiconductor

JFET N-CH 10MA 30MW USFP

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
Current Drain (Id) - Max: 10mA
Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Resistance - RDS(On): -
Power - Max: 30mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-USFP

パッケージ: 3-SMD, Flat Leads

在庫3,440

-

1.2mA @ 10V

10mA

180mV @ 1µA

4pF @ 10V

-

30mW

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-USFP

2SK715W

ON Semiconductor

JFET N-CH 50MA 300MW SPA

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 15V
Current - Drain (Idss) @ Vds (Vgs=0): 14.5mA @ 5V
Current Drain (Id) - Max: 50mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72
Supplier Device Package: 3-SPA

パッケージ: SC-72

在庫4,448

-

15V

14.5mA @ 5V

50mA

600mV @ 100µA

10pF @ 5V

-

300mW

125°C (TJ)

Through Hole

SC-72

3-SPA

J112RL1

ON Semiconductor

JFET N-CH 35V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 50 Ohm
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫5,824

35V

-

5mA @ 15V

-

1V @ 1µA

-

50 Ohm

350mW

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BFR30LT1G

ON Semiconductor

JFET N-CH 225MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Resistance - RDS(On): -
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫4,048

-

25V

4mA @ 10V

-

5V @ 0.5nA

5pF @ 10V

-

225mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

J271

Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA)

在庫7,424

30V

-

6mA @ 15V

-

1.5V @ 1nA

-

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

PN5432

Fairchild/ON Semiconductor

JFET N-CH 25V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
Resistance - RDS(On): 5 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA)

在庫6,608

25V

-

150mA @ 15V

-

4V @ 3nA

30pF @ 10V (VGS)

5 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J201_D74Z

Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫3,296

40V

-

200µA @ 20V

-

300mV @ 10nA

-

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5638

Fairchild/ON Semiconductor

JFET N-CH 30V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Resistance - RDS(On): 30 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA)

在庫9,912

30V

-

50mA @ 20V

-

10pF @ 12V (VGS)

30 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J113,126

NXP

JFET N-CH 40V 400MW TO92-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Resistance - RDS(On): 100 Ohm
Power - Max: 400mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫4,240

40V

2mA @ 15V

-

500mV @ 1µA

6pF @ 10V (VGS)

100 Ohm

400mW

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BSR56,215

NXP

JFET N-CH 40V 0.25W SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
Current Drain (Id) - Max: 20mA
Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 25 Ohm
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫2,032

40V

50mA @ 15V

20mA

4V @ 0.5nA

-

25 Ohm

250mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

SMMBF4393LT1G

ON Semiconductor

JFET N-CH 30V 0.225W SOT23-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
Resistance - RDS(On): 100 Ohm
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫36,000

30V

30mA @ 15V

-

3V @ 10nA

14pF @ 15V (VGS)

100 Ohm

225mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

MMBFJ113

Fairchild/ON Semiconductor

JFET N-CH 35V 350MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 100 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫1,467,984

35V

-

2mA @ 15V

-

500mV @ 1µA

-

100 Ohm

350mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

LS5912-TO-71-6L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 25V TO71

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 25 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Resistance - RDS(On): -
Power - Max: 500 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-71-6 Metal Can
Supplier Device Package: TO-71

パッケージ: -

在庫1,500

25 V

-

7 mA @ 10 V

-

1 V @ 1 nA

5pF @ 10V

-

500 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-71-6 Metal Can

TO-71

SMP152

InterFET

JFET N-Channel -20V Low Noise

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 20 V
Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.2 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Resistance - RDS(On): 42 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: -

Request a Quote

-

20 V

14 mA @ 10 V

-

1.2 V @ 1 nA

15pF @ 10V

42 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

2N2608UB-TR

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Resistance - RDS(On): -
Power - Max: 300 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

パッケージ: -

Request a Quote

30 V

-

1 mA @ 5 V

-

750 mV @ 1 µA

10pF @ 5V

-

300 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

CMPFJ175-PBFREE

Central Semiconductor Corp

IC JFET P-CH SOT23-3

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

SST201-SOT-23-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 40V SOT23-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Resistance - RDS(On): -
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: -

在庫16,689

40 V

-

200 µA @ 15 V

-

300 mV @ 10 nA

4.5pF @ 15V

-

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

NTE460

NTE Electronics, Inc

JFET P-CH 20V TO72

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 20 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
Resistance - RDS(On): 800 Ohms
Power - Max: 300 mW
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

パッケージ: -

Request a Quote

20 V

-

2 mA @ 10 V

-

20pF @ 10V

800 Ohms

300 mW

-

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

PF5301-TO-92-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 30V TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Resistance - RDS(On): -
Power - Max: 300 mW
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

パッケージ: -

在庫3,018

30 V

-

30 µA @ 10 V

-

3 V @ 1 nA

3pF @ 10V

-

300 mW

-55°C ~ 135°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

MQ2N4093UB-TR

Microchip Technology

JFET N-CH 40V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 80 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

パッケージ: -

Request a Quote

40 V

8 mA @ 20 V

-

16pF @ 20V

80 Ohms

360 mW

-65°C ~ 175°C (TJ)

Surface Mount

3-SMD, No Lead

UB