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トランジスタ - プログラム可能ユニジャンクション

レコード 14
ページ 1/1
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Power Dissipation (Max)
Voltage - Output
Voltage - Offset (Vt)
Current - Gate to Anode Leakage (Igao)
Current - Valley (Iv)
Current - Peak
Package / Case
hot2N6028RLRPG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫317
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRMG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫284
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6027RL1G
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫4,400
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRP
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫473
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6028G
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫581
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA)
2N6027RL1
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫320
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6027G
ON Semiconductor

TRANS PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫38,320
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA)
2N6028RLRAG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫365
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6027RLRAG
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫3,476
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRA
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫215
300mW
11V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6027RLRA
ON Semiconductor

THYRISTOR PROG UNIJUNCT 40V TO92

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 11V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
在庫10,000
300mW
11V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot2N6028
Central Semiconductor Corp

PROGRAMMABLE UJT 40V TO226-3

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 6V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫1,010,020
300mW
6V
600mV
10nA
25µA
150nA
TO-226-3, TO-92-3 (TO-226AA)
hot2N6027
Central Semiconductor Corp

PROGRAMMABLE UJT 40V TO226-3

  • Voltage: 40V
  • Power Dissipation (Max): 300mW
  • Voltage - Output: 6V
  • Voltage - Offset (Vt): 1.6V
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 50µA
  • Current - Peak: 2µA
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
パッケージ: TO-226-3, TO-92-3 (TO-226AA)
在庫1,116,024
300mW
6V
1.6V
10nA
50µA
2µA
TO-226-3, TO-92-3 (TO-226AA)
CMPP6028 TR
Central Semiconductor Corp

PROGRAMMABLE UJT SOT-23

  • Voltage: 40V
  • Power Dissipation (Max): 167mW
  • Voltage - Output: 6V
  • Voltage - Offset (Vt): 600mV
  • Current - Gate to Anode Leakage (Igao): 10nA
  • Current - Valley (Iv): 25µA
  • Current - Peak: 150nA
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫8,641
167mW
6V
600mV
10nA
25µA
150nA
TO-236-3, SC-59, SOT-23-3