ページ 206 - ダイオード - ブリッジ整流器 | ディスクリート半導体製品 | Heisener Electronics
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ダイオード - ブリッジ整流器

レコード 7,565
ページ  206/271
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在庫
数量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
KBU6G/1
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 6A 400V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
パッケージ: 4-SIP, KBU
在庫6,752
Standard
400V
6A
1V @ 6A
5µA @ 400V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
160MT100KB
Vishay Semiconductor Diodes Division

RECT BRIDGE 1000V 160A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 160A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 10mA @ 1000V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTK
  • Supplier Device Package: MTK
パッケージ: MTK
在庫4,160
Standard
1000V
160A
-
10mA @ 1000V
-40°C ~ 150°C (TJ)
Chassis Mount
MTK
MTK
hot VUO60-12NO3
IXYS

RECT BRIDGE 3PH 72A 1200V FO-F-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 72A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-F-B
  • Supplier Device Package: FO-F-B
パッケージ: FO-F-B
在庫6,224
Standard
1200V
72A
1.9V @ 150A
300µA @ 1200V
-40°C ~ 125°C (TJ)
Chassis Mount
FO-F-B
FO-F-B
GSIB2080-E3/45
Vishay Semiconductor Diodes Division

DIODE 20A 800V GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
パッケージ: 4-SIP, GSIB-5S
在庫3,648
Standard
800V
3.5A
1V @ 10A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GBU801HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: 4-SIP, GBU
在庫6,752
Standard
50V
8A
1.1V @ 8A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
BU1010-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1000V 10A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
パッケージ: 4-SIP, BU
在庫3,552
Standard
1000V
3.2A
1.05V @ 5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
hot GBU6K-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 800V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: 4-SIP, GBU
在庫6,384
Standard
800V
6A
1V @ 6A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
DBL102GHC1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
パッケージ: 4-DIP (0.300", 7.62mm)
在庫7,280
Standard
100V
1A
1.1V @ 1A
2µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
CDBHM290L-HF
Comchip Technology

DIODE SCHOTTKY 90V 2A MBS-2

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 90V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Current - Reverse Leakage @ Vr: 1mA @ 90V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: MBS-2
パッケージ: TO-269AA, 4-BESOP
在庫5,456
Schottky
90V
2A
850mV @ 2A
1mA @ 90V
-55°C ~ 125°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
MBS-2
ABS6 RGG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
パッケージ: 4-SMD, Gull Wing
在庫2,224
Standard
600V
800mA
950mV @ 400mA
10µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
EDF1DM-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1A 200V 50NS 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
パッケージ: 4-EDIP (0.300", 7.62mm)
在庫3,584
Standard
200V
1A
1.05V @ 1A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
VS-36MB10A
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 100V 35A D-34A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, D-34
  • Supplier Device Package: D-34
パッケージ: 4-Square, D-34
在庫6,464
Standard
100V
35A
-
10µA @ 100V
-40°C ~ 150°C (TJ)
QC Terminal
4-Square, D-34
D-34
GBJ1001-F
Diodes Incorporated

RECT BRIDGE GPP 10A 100V GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
パッケージ: 4-SIP, GBJ
在庫5,904
Standard
100V
10A
1.05V @ 5A
10µA @ 100V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
KBU8M
GeneSiC Semiconductor

DIODE BRIDGE 1000V 8A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
パッケージ: 4-SIP, KBU
在庫16,440
Standard
1000V
8A
1V @ 8A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
KBJ410_T0_00601
Panjit International Inc.

KBJ PACKAGE, 4A/1000V STANDARD B

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ-2
  • Supplier Device Package: KBJ-2
パッケージ: -
在庫29,988
Standard
1 kV
4 A
1.05 V @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ-2
KBJ-2
VS-161MT180C
Vishay General Semiconductor - Diodes Division

MTC - THREE PHASE BRIDGE

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.8 kV
  • Current - Average Rectified (Io): 257 A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 300 A
  • Current - Reverse Leakage @ Vr: 12 mA @ 1800 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
パッケージ: -
在庫51
Standard
1.8 kV
257 A
1.85 V @ 300 A
12 mA @ 1800 V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
NTE5316
NTE Electronics, Inc

R-SI BRIDGE 800V 8A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square
  • Supplier Device Package: -
パッケージ: -
Request a Quote
Standard
800 V
8 A
1.1 V @ 4 A
10 µA @ 800 V
-55°C ~ 125°C (TJ)
Through Hole
4-Square
-
KBP4MI_T0_00101
Panjit International Inc.

KBP, GENERAL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP, KBP
  • Supplier Device Package: KBP
パッケージ: -
在庫8,400
Standard
1 kV
4 A
1.1 V @ 4 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP, KBP
KBP
DBLS203G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 200V 2A DBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
パッケージ: -
在庫2,685
Standard
200 V
2 A
1.15 V @ 2 A
2 µA @ 200 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
GBL608-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
パッケージ: -
Request a Quote
Standard
800 V
6 A
1 V @ 3 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
RMB4SH
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 400V 500MA MBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 500 mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-BESOP (0.173", 4.40mm Width)
  • Supplier Device Package: MBS
パッケージ: -
在庫9,000
Standard
400 V
500 mA
1 V @ 400 mA
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Surface Mount
4-BESOP (0.173", 4.40mm Width)
MBS
DF30NA160F1
SanRex Corporation

DIOE MODULE 1600V 30A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 30 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
  • Current - Reverse Leakage @ Vr: 14 mA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 5-SIP Exposed Pad
  • Supplier Device Package: 5-SIP
パッケージ: -
Request a Quote
Standard
1.6 kV
30 A
1.2 V @ 30 A
14 mA @ 1600 V
-40°C ~ 150°C (TJ)
Through Hole
5-SIP Exposed Pad
5-SIP
GBL410
Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
パッケージ: -
在庫225
Standard
1 kV
4 A
1 V @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
TT10M-13
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE TTL T&R

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: TTL
パッケージ: -
在庫2,013
Standard
1 kV
10 A
1.05 V @ 5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
TTL
DB102SP-HF
Comchip Technology

BRIDGE RECT 1PHASE 100V 1A DBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBS
パッケージ: -
Request a Quote
Standard
100 V
1 A
1.1 V @ 1 A
10 µA @ 100 V
-55°C ~ 150°C
Surface Mount
4-SMD, Gull Wing
DBS
680-4E3
Microchip Technology

BRIDGES

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 400 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, NA
  • Supplier Device Package: NA
パッケージ: -
Request a Quote
Standard
400 V
10 A
1.2 V @ 2 A
2 µA @ 400 V
-65°C ~ 150°C (TJ)
Chassis Mount
4-Square, NA
NA
B250S-SLIM
Diotec Semiconductor

1PH BRIDGE SO-DIL 600V 1A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SO-DIL SLIM
パッケージ: -
在庫9,000
Standard
600 V
1 A
1.1 V @ 1 A
5 µA @ 600 V
-50°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SO-DIL SLIM
PB1010
Diotec Semiconductor

BRIDGE 1-PH KBPC8-PB10 1000V 10A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 7 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, PB
  • Supplier Device Package: PB
パッケージ: -
Request a Quote
Standard
1 kV
7 A
1.2 V @ 5 A
5 µA @ 1000 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, PB
PB