ページ 253 - ダイオード - ブリッジ整流器 | ディスクリート半導体製品 | Heisener Electronics
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ダイオード - ブリッジ整流器

レコード 7,565
ページ  253/271
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パッケージ
在庫
数量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MB4M-BP
Micro Commercial Co

DIODE BRIDGE GPP 0.5A MB-1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.200", 5.08mm)
  • Supplier Device Package: MB-1
パッケージ: 4-DIP (0.200", 5.08mm)
在庫2,192
Standard
400V
500mA
1V @ 400mA
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.200", 5.08mm)
MB-1
MB158
Diodes Incorporated

RECTIFIER BRIDGE 15A 800V MB-35

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, MB-W
  • Supplier Device Package: MB-W
パッケージ: 4-Square, MB-W
在庫7,008
Standard
800V
15A
1.1V @ 7.5A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, MB-W
MB-W
GBPC1508W
Diodes Incorporated

RECT BRIDGE GPP 800V 15A GBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
パッケージ: 4-Square, GBPC-W
在庫5,456
Standard
800V
15A
1.1V @ 7.5A
5µA @ 800V
-65°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBPC3506W/1
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 35A 600V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
パッケージ: 4-Square, GBPC-W
在庫3,008
Standard
600V
35A
1.1V @ 17.5A
5µA @ 600V
-
Through Hole
4-Square, GBPC-W
GBPC-W
GBJ10005
Diodes Incorporated

RECT BRIDGE GPP 50V 10A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
パッケージ: 4-SIP, GBJ
在庫7,760
Standard
50V
10A
1.05V @ 5A
10µA @ 50V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
VS-91MT160KPBF
Vishay Semiconductor Diodes Division

POWER MOD 3PH BRIDGE 55A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MT-K Module
  • Supplier Device Package: MT-K
パッケージ: MT-K Module
在庫3,440
Standard
1600V
90A
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
MT-K Module
MT-K
M2550TB1200
Crydom Co.

MODULE POWER 50A 1200V 3PH BRDG

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: Module
在庫5,824
Standard
1200V
50A
-
-
-
Chassis Mount
Module
Module
VUO100-08NO7
IXYS

RECT BRIDGE 100A 800V FO-T-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
  • Current - Reverse Leakage @ Vr: 500µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
  • Supplier Device Package: FO-T-A
パッケージ: FO-T-A
在庫7,968
Standard
800V
100A
1.4V @ 150A
500µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
FO-T-A
FO-T-A
KBPC3506W
GeneSiC Semiconductor

DIODE BRIDGE 600V 35A KBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-W
  • Supplier Device Package: KBPC-W
パッケージ: 4-Square, KBPC-W
在庫5,552
Standard
600V
35A
1.1V @ 17.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-W
KBPC-W
TS15P01G C2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
パッケージ: 4-SIP, TS-6P
在庫6,800
Standard
50V
15A
1.1V @ 15A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
G2SB80-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 800V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
パッケージ: 4-SIP, GBL
在庫3,520
Standard
800V
1.5A
1V @ 750mA
50µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
B380C1000G-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 1A 600V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
パッケージ: 4-Circular, WOG
在庫7,040
Standard
600V
1A
1V @ 1A
10µA @ 600V
-40°C ~ 125°C (TJ)
Through Hole
4-Circular, WOG
WOG
CD-MBL210S
Bourns Inc.

DIO BR VRRM 1000V 2A MBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Chip, Concave Terminals
  • Supplier Device Package: -
パッケージ: Chip, Concave Terminals
在庫2,320
Standard
1000V
2A
1V @ 2A
5µA @ 1000V
-55°C ~ 175°C (TJ)
Surface Mount
Chip, Concave Terminals
-
T10JA06G-K
Taiwan Semiconductor Corporation

10A, 800V, STANDARD BRIDGE RECTI

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
パッケージ: -
在庫4,500
Standard
800 V
10 A
1.1 V @ 10 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBU804G
SMC Diode Solutions

BRIDGE RECT 1PHASE 400V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
パッケージ: -
Request a Quote
Standard
400 V
8 A
1.1 V @ 8 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
TT8JL
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE TT T&R

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: TTL
パッケージ: -
Request a Quote
Standard
600 V
8 A
900 mV @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
TTL
KBJA1510-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JB
  • Supplier Device Package: JB
パッケージ: -
Request a Quote
Standard
1 kV
15 A
1 V @ 7.5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, JB
JB
MSCDC200H120AG
Microchip Technology

PM-DIODE-SIC-SBD-SP6C

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 1.2 kV
  • Current - Average Rectified (Io): 200 A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A
  • Current - Reverse Leakage @ Vr: 800 µA @ 1200 V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6
パッケージ: -
在庫6
Silicon Carbide Schottky
1.2 kV
200 A
1.8 V @ 200 A
800 µA @ 1200 V
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6
DXK210_T0_00001
Panjit International Inc.

DXK,GLASS PASSIVATED BRIDGE RECT

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: DXK
パッケージ: -
在庫14,505
Standard
1 kV
2 A
1.05 V @ 1 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP
DXK
CBR1U-D020S-TIN-LEAD
Central Semiconductor Corp

SURFACE MOUNT-RECTIFIER-B

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMDIP
パッケージ: -
在庫132
Standard
200 V
1 A
1.05 V @ 1 A
5 µA @ 200 V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SMDIP
GBUK8D
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 190 V
  • Current - Average Rectified (Io): 5.6 A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 mA
  • Current - Reverse Leakage @ Vr: 5 µA @ 190 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: -
Request a Quote
Standard
190 V
5.6 A
900 mV @ 1 mA
5 µA @ 190 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBPC2508-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
パッケージ: -
Request a Quote
Standard
800 V
25 A
1.1 V @ 12.5 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
GBJL606-BP
Micro Commercial Co

DIODE BRIDGE GBJL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJL
  • Supplier Device Package: GBJL
パッケージ: -
Request a Quote
Standard
600 V
6 A
1 V @ 3 A
5 µA @ 600 V
-55°C ~ 150°C
Through Hole
4-SIP, GBJL
GBJL
UR8KB60
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 8A D3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: D3K
パッケージ: -
在庫4,464
Standard
600 V
8 A
1.1 V @ 8 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
D3K
RBV804
EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 8A 400V, CASE T

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RBV-25
  • Supplier Device Package: RBV-25
パッケージ: -
Request a Quote
Standard
400 V
8 A
1 V @ 4 A
10 µA @ 400 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, RBV-25
RBV-25
GBU6JL-5301M3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3.8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3.8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: -
Request a Quote
Standard
600 V
3.8 A
1 V @ 6 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
BR2504
EIC SEMICONDUCTOR INC.

STD 25A, CASE TYPE: BR50

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, BR-50
  • Supplier Device Package: BR-50
パッケージ: -
Request a Quote
Standard
400 V
25 A
1.1 V @ 12.5 A
10 µA @ 400 V
-40°C ~ 150°C (TJ)
Chassis Mount
4-Square, BR-50
BR-50
G3SBA60-5410M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 2.3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 2.3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
パッケージ: -
Request a Quote
Standard
600 V
2.3 A
1 V @ 2 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU