ページ 25 - GeneSiC Semiconductor 製品 - ダイオード - 整流器 - シングル

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRH20035RL	GeneSiC Semiconductor	DIODE MODULE 35V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫3,104	35V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 200V	-	Chassis Mount	D-67	D-67	-
MBRH20035L	GeneSiC Semiconductor	DIODE MODULE 35V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫6,384	35V	200A	600mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 200V	-	Chassis Mount	D-67	D-67	-
MBRH20030RL	GeneSiC Semiconductor	DIODE MODULE 30V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: D-67	在庫6,736	30V	200A	580mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20030L	GeneSiC Semiconductor	DIODE MODULE 30V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: D-67	在庫5,024	30V	200A	580mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH20020RL	GeneSiC Semiconductor	DIODE MODULE 20V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫3,840	20V	200A	580mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
MBRH20020L	GeneSiC Semiconductor	DIODE MODULE 20V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫4,800	20V	200A	580mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
MBRH15045RL	GeneSiC Semiconductor	DIODE MODULE 45V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫5,328	45V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-
MBRH15045L	GeneSiC Semiconductor	DIODE MODULE 45V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫6,464	45V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-
MBRH15040RL	GeneSiC Semiconductor	DIODE MODULE 40V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫6,624	40V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Chassis Mount	D-67	D-67	-
MBRH15040L	GeneSiC Semiconductor	DIODE MODULE 40V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫5,280	40V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Chassis Mount	D-67	D-67	-
MBRH15035RL	GeneSiC Semiconductor	DIODE MODULE 35V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫6,560	35V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 35V	-	Chassis Mount	D-67	D-67	-
MBRH15035L	GeneSiC Semiconductor	DIODE MODULE 35V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫7,360	35V	150A	600mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 35V	-	Chassis Mount	D-67	D-67	-
MBRH15030RL	GeneSiC Semiconductor	DIODE MODULE 30V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫2,496	30V	150A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-
MBRH15030L	GeneSiC Semiconductor	DIODE MODULE 30V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: D-67	在庫7,792	30V	150A	580mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH15020RL	GeneSiC Semiconductor	DIODE MODULE 20V 150A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫7,984	20V	150A	580mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
MBRH15020L	GeneSiC Semiconductor	DIODE MODULE 20V 150A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	パッケージ: D-67	在庫6,000	20V	150A	580mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-	Chassis Mount	D-67	D-67	-
GB10SLT12-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 1200V 10A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	在庫3,648	-	-	-	-	-	-	-	-	-	-	-
GB02SLT06-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 650V 2A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	在庫6,240	-	-	-	-	-	-	-	-	-	-	-
GAP05SLT80-220	GeneSiC Semiconductor	DIODE SCHOTTKY 8KV 50MA AXIAL Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 8000V Current - Average Rectified (Io): 50mA (DC) Voltage - Forward (Vf) (Max) @ If: 4.6V @ 50mA Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 3.8µA @ 8000V Capacitance @ Vr, F: 25pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: Axial	在庫2,224	8000V	50mA (DC)	4.6V @ 50mA	No Recovery Time > 500mA (Io)	0ns	3.8µA @ 8000V	25pF @ 1V, 1MHz	Through Hole	Axial	-	-55°C ~ 175°C
1N8028-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 9.4A TO257 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 9.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 20µA @ 1200V Capacitance @ Vr, F: 884pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -55°C ~ 250°C	パッケージ: TO-257-3	在庫5,840	1200V	9.4A (DC)	1.6V @ 10A	No Recovery Time > 500mA (Io)	0ns	20µA @ 1200V	884pF @ 1V, 1MHz	Through Hole	TO-257-3	TO-257	-55°C ~ 250°C
1N8034-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 9.4A TO257 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 9.4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 650V Capacitance @ Vr, F: 1107pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -55°C ~ 250°C	パッケージ: TO-257-3	在庫6,048	650V	9.4A (DC)	1.34V @ 10A	No Recovery Time > 500mA (Io)	0ns	5µA @ 650V	1107pF @ 1V, 1MHz	Through Hole	TO-257-3	TO-257	-55°C ~ 250°C
1N8031-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 1A TO276 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 650V Capacitance @ Vr, F: 76pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-276AA Supplier Device Package: TO-276 Operating Temperature - Junction: -55°C ~ 250°C	パッケージ: TO-276AA	在庫3,216	650V	1A	1.5V @ 1A	No Recovery Time > 500mA (Io)	0ns	5µA @ 650V	76pF @ 1V, 1MHz	Through Hole	TO-276AA	TO-276	-55°C ~ 250°C
MBRH200200R	GeneSiC Semiconductor	DIODE MODULE 200V 200A D-67 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 920mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: D-67	在庫2,368	200V	200A	920mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 200V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRH200200	GeneSiC Semiconductor	DIODE MODULE 200V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 920mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: D-67	在庫2,640	200V	200A	920mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 200V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MURH7020R	GeneSiC Semiconductor	DIODE FAST 200V 70A D-67 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: D-67	在庫5,040	200V	70A	1V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	25µA @ 200V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MURH7020	GeneSiC Semiconductor	DIODE FAST 200V 70A D-67 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: D-67	在庫2,144	200V	70A	1V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	25µA @ 200V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
S400YR	GeneSiC Semiconductor	DIODE GEN PURP REV 1.6KV DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	パッケージ: DO-205AB, DO-9, Stud	在庫7,440	1600V	400A	1.2V @ 400A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 200°C
S400Y	GeneSiC Semiconductor	DIODE GEN PURP 1.6KV 400A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	パッケージ: DO-205AB, DO-9, Stud	在庫7,120	1600V	400A	1.2V @ 400A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 200°C
S400QR	GeneSiC Semiconductor	DIODE GEN PURP REV 1.2KV DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	パッケージ: DO-205AB, DO-9, Stud	在庫2,224	1200V	400A	1.2V @ 400A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 200°C
S400Q	GeneSiC Semiconductor	DIODE GEN PURP 1.2KV 400A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	パッケージ: DO-205AB, DO-9, Stud	在庫6,896	1200V	400A	1.2V @ 400A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 200°C

MBRH20035RL

GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫3,104

35V

200A

600mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 200V

-

Chassis Mount

D-67

-

MBRH20035L

GeneSiC Semiconductor

DIODE MODULE 35V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫6,384

35V

200A

600mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 200V

-

Chassis Mount

D-67

-

MBRH20030RL

GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: D-67

在庫6,736

30V

200A

580mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH20030L

GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: D-67

在庫5,024

30V

200A

580mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH20020RL

GeneSiC Semiconductor

DIODE MODULE 20V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫3,840

20V

200A

580mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-

Chassis Mount

D-67

-

MBRH20020L

GeneSiC Semiconductor

DIODE MODULE 20V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫4,800

20V

200A

580mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-

Chassis Mount

D-67

-

MBRH15045RL

GeneSiC Semiconductor

DIODE MODULE 45V 150A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫5,328

45V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 45V

-

Chassis Mount

D-67

-

MBRH15045L

GeneSiC Semiconductor

DIODE MODULE 45V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫6,464

45V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 45V

-

Chassis Mount

D-67

-

MBRH15040RL

GeneSiC Semiconductor

DIODE MODULE 40V 150A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫6,624

40V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 40V

-

Chassis Mount

D-67

-

MBRH15040L

GeneSiC Semiconductor

DIODE MODULE 40V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫5,280

40V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 40V

-

Chassis Mount

D-67

-

MBRH15035RL

GeneSiC Semiconductor

DIODE MODULE 35V 150A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫6,560

35V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 35V

-

Chassis Mount

D-67

-

MBRH15035L

GeneSiC Semiconductor

DIODE MODULE 35V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫7,360

35V

150A

600mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 35V

-

Chassis Mount

D-67

-

MBRH15030RL

GeneSiC Semiconductor

DIODE MODULE 30V 150A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫2,496

30V

150A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Chassis Mount

D-67

-

MBRH15030L

GeneSiC Semiconductor

DIODE MODULE 30V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: D-67

在庫7,792

30V

150A

580mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH15020RL

GeneSiC Semiconductor

DIODE MODULE 20V 150A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫7,984

20V

150A

580mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-

Chassis Mount

D-67

-

MBRH15020L

GeneSiC Semiconductor

DIODE MODULE 20V 150A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

パッケージ: D-67

在庫6,000

20V

150A

580mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-

Chassis Mount

D-67

-

GB10SLT12-214

GeneSiC Semiconductor

SIC SCHOTTKY DIODE 1200V 10A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

在庫3,648

-

GB02SLT06-214

GeneSiC Semiconductor

SIC SCHOTTKY DIODE 650V 2A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

在庫6,240

-

GAP05SLT80-220

GeneSiC Semiconductor

DIODE SCHOTTKY 8KV 50MA AXIAL

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 8000V
Current - Average Rectified (Io): 50mA (DC)
Voltage - Forward (Vf) (Max) @ If: 4.6V @ 50mA
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 3.8µA @ 8000V
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: Axial

在庫2,224

8000V

50mA (DC)

4.6V @ 50mA

No Recovery Time > 500mA (Io)

0ns

3.8µA @ 8000V

25pF @ 1V, 1MHz

Through Hole

Axial

-

-55°C ~ 175°C

1N8028-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 9.4A TO257

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 9.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Capacitance @ Vr, F: 884pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -55°C ~ 250°C

パッケージ: TO-257-3

在庫5,840

1200V

9.4A (DC)

1.6V @ 10A

No Recovery Time > 500mA (Io)

0ns

20µA @ 1200V

884pF @ 1V, 1MHz

Through Hole

TO-257-3

TO-257

-55°C ~ 250°C

1N8034-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 9.4A TO257

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 9.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 650V
Capacitance @ Vr, F: 1107pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -55°C ~ 250°C

パッケージ: TO-257-3

在庫6,048

650V

9.4A (DC)

1.34V @ 10A

No Recovery Time > 500mA (Io)

0ns

5µA @ 650V

1107pF @ 1V, 1MHz

Through Hole

TO-257-3

TO-257

-55°C ~ 250°C

1N8031-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 1A TO276

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 650V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-276AA
Supplier Device Package: TO-276
Operating Temperature - Junction: -55°C ~ 250°C

パッケージ: TO-276AA

在庫3,216

650V

1A

1.5V @ 1A

No Recovery Time > 500mA (Io)

0ns

5µA @ 650V

76pF @ 1V, 1MHz

Through Hole

TO-276AA

TO-276

-55°C ~ 250°C

MBRH200200R

GeneSiC Semiconductor

DIODE MODULE 200V 200A D-67

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: D-67

在庫2,368

200V

200A

920mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 200V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRH200200

GeneSiC Semiconductor

DIODE MODULE 200V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: D-67

在庫2,640

200V

200A

920mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 200V

-

Chassis Mount

D-67

-55°C ~ 150°C

MURH7020R

GeneSiC Semiconductor

DIODE FAST 200V 70A D-67

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: D-67

在庫5,040

200V

70A

1V @ 70A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

25µA @ 200V

-

Chassis Mount

D-67

-55°C ~ 150°C

MURH7020

GeneSiC Semiconductor

DIODE FAST 200V 70A D-67

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: D-67

在庫2,144

200V

70A

1V @ 70A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

25µA @ 200V

-

Chassis Mount

D-67

-55°C ~ 150°C

S400YR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 200°C

パッケージ: DO-205AB, DO-9, Stud

在庫7,440

1600V

400A

1.2V @ 400A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-60°C ~ 200°C

S400Y

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 400A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 200°C

パッケージ: DO-205AB, DO-9, Stud

在庫7,120

1600V

400A

1.2V @ 400A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-60°C ~ 200°C

S400QR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 200°C

パッケージ: DO-205AB, DO-9, Stud

在庫2,224

1200V

400A

1.2V @ 400A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-60°C ~ 200°C

S400Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 400A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 200°C

パッケージ: DO-205AB, DO-9, Stud

在庫6,896

1200V

400A

1.2V @ 400A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-60°C ~ 200°C