ページ 63 - GeneSiC Semiconductor 製品

部品番号	メーカ	説明	パッケージ	在庫
MBRH20030L	GeneSiC Semiconductor	DIODE MODULE 30V 200A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: D-67	在庫5,024
GKR130/18	GeneSiC Semiconductor	DIODE GP 1.8KV 165A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 165A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 22mA @ 1800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-205AA, DO-8, Stud	在庫7,200
MBR8060R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 60V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 750mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 160°C	パッケージ: DO-203AB, DO-5, Stud	在庫5,888
MBR6080R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 80V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AB, DO-5, Stud	在庫7,840
MBR6035	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 60A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AB, DO-5, Stud	在庫6,384
FR85GR05	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 85A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	パッケージ: DO-203AB, DO-5, Stud	在庫7,488
S70K	GeneSiC Semiconductor	DIODE GEN PURP 800V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C	パッケージ: DO-203AB, DO-5, Stud	在庫3,296
1N3213R	GeneSiC Semiconductor	DIODE GEN PURP REV 500V 15A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫4,944
FR16K05	GeneSiC Semiconductor	DIODE GEN PURP 800V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫3,328
1N8024-GA	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 750MA TO257 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 750mA Voltage - Forward (Vf) (Max) @ If: 1.74V @ 750mA Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 10µA @ 1200V Capacitance @ Vr, F: 66pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -55°C ~ 250°C	パッケージ: TO-257-3	在庫6,144
S85YR	GeneSiC Semiconductor	DIODE GEN PURP REV 1.6KV 85A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AB, DO-5, Stud	在庫6,752
S300YR	GeneSiC Semiconductor	DIODE GEN PURP REV 1.6KV DO9 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-9 Operating Temperature - Junction: -60°C ~ 180°C	パッケージ: DO-205AB, DO-9, Stud	在庫6,600
MURF30060	GeneSiC Semiconductor	DIODE GEN PURP 600V 150A TO244 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 25µA @ 600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244	パッケージ: TO-244AB	在庫3,472
MBR40040CTL	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 200A 2 TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 40V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	パッケージ: Twin Tower	在庫5,072
MBRT50040	GeneSiC Semiconductor	DIODE MODULE 40V 500A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	パッケージ: Three Tower	在庫2,096
MBR50040CTR	GeneSiC Semiconductor	DIODE MODULE 40V 500A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	パッケージ: Twin Tower	在庫7,136
MSRTA400100(A)	GeneSiC Semiconductor	DIODE MODULE 1KV 400A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	パッケージ: Three Tower	在庫4,784
MSRTA200120(A)D	GeneSiC Semiconductor	DIODE GEN 1.2KV 200A 3 TOWER Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	パッケージ: Three Tower	在庫5,312
MBRT20035	GeneSiC Semiconductor	DIODE MODULE 35V 200A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	パッケージ: Three Tower	在庫2,560
MBRT300200	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 150A 3 TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	パッケージ: Three Tower	在庫4,112
MBR2X100A060	GeneSiC Semiconductor	DIODE SCHOTTKY 60V 100A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	パッケージ: SOT-227-4, miniBLOC	在庫3,280
MBRT20040	GeneSiC Semiconductor	DIODE MODULE 40V 200A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	パッケージ: Three Tower	在庫7,552
KBPC5008W	GeneSiC Semiconductor	DIODE BRIDGE 800V 50A KBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Supplier Device Package: KBPC-W	パッケージ: 4-Square, KBPC-W	在庫4,128
GD2X100MPS12N	GeneSiC Semiconductor	DIODE MOD SIC 1200V 136A SOT227 Diode Configuration: 2 Independent Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io) (per Diode): 136A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 25 µA @ 1200 V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	パッケージ: -	在庫366
GBJ6M	GeneSiC Semiconductor	1000V 6A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: -	Request a Quote
MSRTA50060A	GeneSiC Semiconductor	DIODE MODULE GP 600V 500A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	パッケージ: -	Request a Quote
GB50MPS17-247	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 216A TO247 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 216A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 60 µA @ 1700 V Capacitance @ Vr, F: 3193pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	Request a Quote
GE04MPS06Q	GeneSiC Semiconductor	650V 4A PQFN 8X8 SIC SCHOTTKY MP Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 650V Current - Max: 4 A Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: 4-PowerVSFN Supplier Device Package: QFN8x8	パッケージ: -	Request a Quote

MBRH20030L

GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: D-67

在庫5,024

GKR130/18

GeneSiC Semiconductor

DIODE GP 1.8KV 165A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io): 165A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 22mA @ 1800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-205AA, DO-8, Stud

在庫7,200

MBR8060R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 60V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 160°C

パッケージ: DO-203AB, DO-5, Stud

在庫5,888

MBR6080R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 80V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AB, DO-5, Stud

在庫7,840

MBR6035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 60A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AB, DO-5, Stud

在庫6,384

FR85GR05

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 85A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: DO-203AB, DO-5, Stud

在庫7,488

S70K

GeneSiC Semiconductor

DIODE GEN PURP 800V 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C

パッケージ: DO-203AB, DO-5, Stud

在庫3,296

1N3213R

GeneSiC Semiconductor

DIODE GEN PURP REV 500V 15A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫4,944

FR16K05

GeneSiC Semiconductor

DIODE GEN PURP 800V 16A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫3,328

1N8024-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 750MA TO257

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 750mA
Voltage - Forward (Vf) (Max) @ If: 1.74V @ 750mA
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: 66pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -55°C ~ 250°C

パッケージ: TO-257-3

在庫6,144

S85YR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV 85A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AB, DO-5, Stud

在庫6,752

S300YR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV DO9

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-9
Operating Temperature - Junction: -60°C ~ 180°C

パッケージ: DO-205AB, DO-9, Stud

在庫6,600

MURF30060

GeneSiC Semiconductor

DIODE GEN PURP 600V 150A TO244

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 25µA @ 600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244

パッケージ: TO-244AB

在庫3,472

MBR40040CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A 2 TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 40V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

パッケージ: Twin Tower

在庫5,072

MBRT50040

GeneSiC Semiconductor

DIODE MODULE 40V 500A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

パッケージ: Three Tower

在庫2,096

MBR50040CTR

GeneSiC Semiconductor

DIODE MODULE 40V 500A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

パッケージ: Twin Tower

在庫7,136

MSRTA400100(A)

GeneSiC Semiconductor

DIODE MODULE 1KV 400A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

パッケージ: Three Tower

在庫4,784

MSRTA200120(A)D

GeneSiC Semiconductor

DIODE GEN 1.2KV 200A 3 TOWER

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

パッケージ: Three Tower

在庫5,312

MBRT20035

GeneSiC Semiconductor

DIODE MODULE 35V 200A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

パッケージ: Three Tower

在庫2,560

MBRT300200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 150A 3 TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

パッケージ: Three Tower

在庫4,112

MBR2X100A060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 100A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

在庫3,280

MBRT20040

GeneSiC Semiconductor

DIODE MODULE 40V 200A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

パッケージ: Three Tower

在庫7,552

KBPC5008W

GeneSiC Semiconductor

DIODE BRIDGE 800V 50A KBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Supplier Device Package: KBPC-W

パッケージ: 4-Square, KBPC-W

在庫4,128

GD2X100MPS12N

GeneSiC Semiconductor

DIODE MOD SIC 1200V 136A SOT227

Diode Configuration: 2 Independent
Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io) (per Diode): 136A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

パッケージ: -

在庫366

GBJ6M

GeneSiC Semiconductor

1000V 6A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: -

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MSRTA50060A

GeneSiC Semiconductor

DIODE MODULE GP 600V 500A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

パッケージ: -

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GB50MPS17-247

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 216A TO247

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 216A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 60 µA @ 1700 V
Capacitance @ Vr, F: 3193pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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GE04MPS06Q

GeneSiC Semiconductor

650V 4A PQFN 8X8 SIC SCHOTTKY MP

Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 650V
Current - Max: 4 A
Capacitance @ Vr, F: -
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: -
Package / Case: 4-PowerVSFN
Supplier Device Package: QFN8x8

パッケージ: -

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