GeneSiC Semiconductor 製品

GA080TH65

GeneSiC Semiconductor

MOD THYRSTR SIC SGL 6500V SOT227

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 6500V
• Current - On State (It (AV)) (Max): 80A
• Current - On State (It (RMS)) (Max): 139A
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: SOT-227-2

パッケージ: SOT-227-2

MBRH30040RL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A D67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: D-67

MURH10020

GeneSiC Semiconductor

DIODE MODULE 200V 100A D-67

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

パッケージ: D-67

1N5829R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 20V DO4

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

FR30JR02

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 30A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: DO-203AB, DO-5, Stud

1N2137A

GeneSiC Semiconductor

DIODE GEN PURP 500V 60A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: DO-203AB, DO-5, Stud

1N2133AR

GeneSiC Semiconductor

DIODE GEN PURP REV 300V 60A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: DO-203AB, DO-5, Stud

S16K

GeneSiC Semiconductor

DIODE GEN PURP 800V 16A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AA, DO-4, Stud

MBRTA40020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A 3TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 30V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

パッケージ: Three Tower

MBRF40030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A TO244AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

パッケージ: TO-244AB

MBRF20045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 100A TO244AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

パッケージ: TO-244AB

MBR60020CT

GeneSiC Semiconductor

DIODE MODULE 20V 300A 2TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io) (per Diode): 300A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

パッケージ: Twin Tower

MURTA40040R

GeneSiC Semiconductor

DIODE GEN PURP 400V 200A 3 TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 400V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

パッケージ: Three Tower

MBR50080CTR

GeneSiC Semiconductor

DIODE MODULE 80V 500A 2TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 500A (DC)
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

パッケージ: Twin Tower

MSRT150120(A)

GeneSiC Semiconductor

DIODE MODULE 1.2KV 150A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 150A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

パッケージ: Three Tower

GBPC35005T

GeneSiC Semiconductor

DIODE BRIDGE 50V 35A GBPC-T/W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC
• Supplier Device Package: GBPC

パッケージ: 4-Square, GBPC

KBPC2504W

GeneSiC Semiconductor

DIODE BRIDGE 400V 25A KBPC-W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, KBPC-W
• Supplier Device Package: KBPC-W

パッケージ: 4-Square, KBPC-W

GBU10M

GeneSiC Semiconductor

DIODE BRIDGE 1000V 10A GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

GBU10A

GeneSiC Semiconductor

DIODE BRIDGE 50V 10A GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

DB153G

GeneSiC Semiconductor

DIODE BRIDGE 200V 1.5A DB

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-EDIP (0.321", 8.15mm)
• Supplier Device Package: DB

パッケージ: 4-EDIP (0.321", 8.15mm)

KBU6D

GeneSiC Semiconductor

DIODE BRIDGE 200V 6A KBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBU
• Supplier Device Package: KBU

パッケージ: 4-SIP, KBU

MSRT150100AD

GeneSiC Semiconductor

DIODE MODULE GP 1KV 150A 3TOWER

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io) (per Diode): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

パッケージ: -

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GD20MPS12A

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 42A TO220-2

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 42A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
• Capacitance @ Vr, F: 737pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

G3R20MT12K

GeneSiC Semiconductor

SIC MOSFET N-CH 128A TO247-4

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 2.69V @ 15mA
• Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 542W (Tc)
• Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4
• Package / Case: TO-247-4

パッケージ: -

GBJ6B

GeneSiC Semiconductor

100V 6A GBJ SINGLE PHASE BRIDGE

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100 V
• Current - Average Rectified (Io): 6 A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

パッケージ: -

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GBJ15G

GeneSiC Semiconductor

400V 15A GBJ SINGLE PHASE BRIDGE

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400 V
• Current - Average Rectified (Io): 15 A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

パッケージ: -

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GE12MPS06E

GeneSiC Semiconductor

650V 12A TO-252-2 SIC SCHOTTKY M

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (Max): 650V
• Current - Max: 12 A
• Capacitance @ Vr, F: -
• Resistance @ If, F: -
• Power Dissipation (Max): -
• Operating Temperature: -
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2

パッケージ: -

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MSRT100100D

GeneSiC Semiconductor

DIODE MODULE GP 1KV 100A 3TOWER

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

パッケージ: -

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