ページ 138 - ISSI, Integrated Silicon Solution Inc 製品 - メモリ

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS61LV12824-10BL	ISSI, Integrated Silicon Solution Inc	IC SRAM 3MBIT 10NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 3Mb (128K x 24) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	パッケージ: 119-BGA	在庫4,112	SRAM	SRAM - Asynchronous	3Mb (128K x 24)	Parallel	-	10ns	10ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS46LR32160C-6BLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫5,968	DRAM	SDRAM - Mobile DDR	512Mb (16M x 32)	Parallel	166MHz	12ns	5.5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS43LR32160C-6BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫4,720	DRAM	SDRAM - Mobile DDR	512Mb (16M x 32)	Parallel	166MHz	12ns	5.5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42VM32160E-75BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫3,936	DRAM	SDRAM - Mobile	512Mb (16M x 32)	Parallel	133MHz	-	6ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS46R16320D-5BLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 200MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (8x13)	パッケージ: 60-TFBGA	在庫2,592	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (8x13)
IS64LF12836A-7.5B3LA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4.5MBIT 7.5NS 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	パッケージ: 165-TBGA	在庫5,776	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 125°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61WV51216EDBLL-8BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 8MBIT 8NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 8ns Access Time: 8ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	パッケージ: 48-TFBGA	在庫4,864	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	8ns	8ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS61WV25632BLL-10BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 8MBIT 10NS 90FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (256K x 32) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫5,520	SRAM	SRAM - Asynchronous	8Mb (256K x 32)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS46R16320D-6BLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 167MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (8x13)	パッケージ: 60-TFBGA	在庫5,136	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 105°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (8x13)
IS42S16320F-7TL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫5,536	DRAM	SDRAM	512Mb (32M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS43LR16640A-5BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 200MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10)	パッケージ: 60-TFBGA	在庫7,904	DRAM	SDRAM - Mobile DDR	1Gb (64M x 16)	Parallel	200MHz	15ns	5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (8x10)
IS43TR16256A-125KBLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 4GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫3,520	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS46TR16128B-125KBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫5,760	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16128AL-125KBLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫5,136	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS46TR16128A-15HBLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫3,552	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	667MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS46TR16128BL-15HBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫4,896	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	667MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS42SM32160E-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫3,824	DRAM	SDRAM - Mobile	512Mb (16M x 32)	Parallel	133MHz	-	6ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS46DR16320C-3DBLA2	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 333MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	パッケージ: 84-TFBGA	在庫4,336	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 105°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
IS46DR16640B-3DBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	パッケージ: 84-TFBGA	在庫6,960	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 105°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
IS43LR16640A-6BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 166MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10)	パッケージ: 60-TFBGA	在庫6,896	DRAM	SDRAM - Mobile DDR	1Gb (64M x 16)	Parallel	166MHz	15ns	5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (8x10)
IS61WV51216EDBLL-8TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 8MBIT 8NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 8ns Access Time: 8ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫5,328	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	8ns	8ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP2
IS64VF12832A-7.5TQLA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4Mb (128K x 32) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫5,136	SRAM	SRAM - Synchronous	4Mb (128K x 32)	Parallel	117MHz	-	7.5ns	2.375 V ~ 2.625 V	-40°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS64LPS12832A-200TQLA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4Mb (128K x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	パッケージ: 100-LQFP	在庫7,552	SRAM	SRAM - Synchronous	4Mb (128K x 32)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
IS64LF12832A-7.5TQLA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 117MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4Mb (128K x 32) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	パッケージ: 100-LQFP	在庫3,808	SRAM	SRAM - Synchronous	4Mb (128K x 32)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
IS43LR32160B-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫6,192	DRAM	SDRAM - Mobile DDR	512Mb (16M x 32)	Parallel	166MHz	12ns	5.5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS43TR16256A-15HBLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 4GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫5,696	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	667MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS46TR16128B-15HBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫5,328	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	667MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS64LPS12832EC-200TQLA3	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4Mb (128K x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫5,216	SRAM	SRAM - Synchronous	4Mb (128K x 32)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)

IS61LV12824-10BL

ISSI, Integrated Silicon Solution Inc

IC SRAM 3MBIT 10NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 3Mb (128K x 24)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

パッケージ: 119-BGA

在庫4,112

SRAM

SRAM - Asynchronous

3Mb (128K x 24)

Parallel

-

10ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS46LR32160C-6BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫5,968

DRAM

SDRAM - Mobile DDR

512Mb (16M x 32)

Parallel

166MHz

12ns

5.5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS43LR32160C-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫4,720

DRAM

SDRAM - Mobile DDR

512Mb (16M x 32)

Parallel

166MHz

12ns

5.5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42VM32160E-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫3,936

DRAM

SDRAM - Mobile

512Mb (16M x 32)

Parallel

133MHz

-

6ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS46R16320D-5BLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 200MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x13)

パッケージ: 60-TFBGA

在庫2,592

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (8x13)

IS64LF12836A-7.5B3LA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 7.5NS 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

パッケージ: 165-TBGA

在庫5,776

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 125°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61WV51216EDBLL-8BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 8NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 8ns
Access Time: 8ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

パッケージ: 48-TFBGA

在庫4,864

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

8ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS61WV25632BLL-10BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 10NS 90FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (256K x 32)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫5,520

SRAM

SRAM - Asynchronous

8Mb (256K x 32)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS46R16320D-6BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x13)

パッケージ: 60-TFBGA

在庫5,136

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 105°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (8x13)

IS42S16320F-7TL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫5,536

DRAM

SDRAM

512Mb (32M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IS43LR16640A-5BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 200MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10)

パッケージ: 60-TFBGA

在庫7,904

DRAM

SDRAM - Mobile DDR

1Gb (64M x 16)

Parallel

200MHz

15ns

5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (8x10)

IS43TR16256A-125KBLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫3,520

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS46TR16128B-125KBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫5,760

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16128AL-125KBLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫5,136

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS46TR16128A-15HBLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫3,552

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

667MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS46TR16128BL-15HBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫4,896

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

667MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS42SM32160E-75BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫3,824

DRAM

SDRAM - Mobile

512Mb (16M x 32)

Parallel

133MHz

-

6ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS46DR16320C-3DBLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 333MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

パッケージ: 84-TFBGA

在庫4,336

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 105°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

IS46DR16640B-3DBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

パッケージ: 84-TFBGA

在庫6,960

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 105°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

IS43LR16640A-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 166MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10)

パッケージ: 60-TFBGA

在庫6,896

DRAM

SDRAM - Mobile DDR

1Gb (64M x 16)

Parallel

166MHz

15ns

5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (8x10)

IS61WV51216EDBLL-8TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 8NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 8ns
Access Time: 8ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫5,328

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

8ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP2

IS64VF12832A-7.5TQLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4Mb (128K x 32)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫5,136

SRAM

SRAM - Synchronous

4Mb (128K x 32)

Parallel

117MHz

-

7.5ns

2.375 V ~ 2.625 V

-40°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS64LPS12832A-200TQLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4Mb (128K x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

パッケージ: 100-LQFP

在庫7,552

SRAM

SRAM - Synchronous

4Mb (128K x 32)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

IS64LF12832A-7.5TQLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 117MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4Mb (128K x 32)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

パッケージ: 100-LQFP

在庫3,808

SRAM

SRAM - Synchronous

4Mb (128K x 32)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

IS43LR32160B-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫6,192

DRAM

SDRAM - Mobile DDR

512Mb (16M x 32)

Parallel

166MHz

12ns

5.5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS43TR16256A-15HBLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫5,696

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

667MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS46TR16128B-15HBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫5,328

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

667MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS64LPS12832EC-200TQLA3

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4Mb (128K x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫5,216

SRAM

SRAM - Synchronous

4Mb (128K x 32)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)