ページ 93 - ISSI, Integrated Silicon Solution Inc 製品 - メモリ

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS25LQ080B-JKLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 8MBIT 104MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	パッケージ: 8-WDFN Exposed Pad	在庫12,204	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI - Quad I/O	104MHz	1ms	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
IS61NLP102436B-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 36MBIT 200MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫5,792	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS43DR82560C-25DBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 400MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (10.5x8)	パッケージ: 60-TFBGA	在庫6,448	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (10.5x8)
IS43DR82560C-3DBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 333MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (10.5x8)	パッケージ: 60-TFBGA	在庫6,432	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (10.5x8)
IS43LR32640A-6BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-LFBGA Supplier Device Package: 90-WBGA (8x13)	パッケージ: 90-LFBGA	在庫4,352	DRAM	SDRAM - DDR	2Gb (64M x 32)	Parallel	166MHz	15ns	5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-LFBGA	90-WBGA (8x13)
IS61LPS51236B-200B3LI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8MBIT 200MHZ 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	パッケージ: 165-TBGA	在庫4,000	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	200MHz	-	3ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61NLP51236B-200B3LI	ISSI, Integrated Silicon Solution Inc	IC SRAM 18MBIT 200MHZ 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	パッケージ: 165-TBGA	在庫7,568	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	200MHz	-	3ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS43DR16128C-3DBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 333MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	パッケージ: 84-TFBGA	在庫4,672	DRAM	SDRAM - DDR2	2Gb (128M x 16)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
IS61NLP51236B-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 18MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫4,336	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	200MHz	-	3ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61NLP102418B-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 18MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫6,000	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	200MHz	-	3ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61LF51236B-7.5TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 18MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫7,392	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS43LR32640A-6BL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-LFBGA Supplier Device Package: 90-WBGA (8x13)	パッケージ: 90-LFBGA	在庫4,768	DRAM	SDRAM - DDR	2Gb (64M x 32)	Parallel	166MHz	15ns	5ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	90-LFBGA	90-WBGA (8x13)
IS61LPS25636B-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 9MBIT 200MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫7,888	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61LPS51218B-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 9MBIT 200MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫7,088	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61LF51218B-7.5TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 9MBIT 7.5NS 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫6,560	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS43TR82560BL-125KBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	パッケージ: 78-TFBGA	在庫4,800	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
IS43DR82560C-3DBL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 333MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (10.5x8)	パッケージ: 60-TFBGA	在庫7,904	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-TWBGA (10.5x8)
IS43DR16128C-3DBL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 333MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	パッケージ: 84-TFBGA	在庫6,592	DRAM	SDRAM - DDR2	2Gb (128M x 16)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
IS43R86400F-5TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 64MX8 200MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	パッケージ: 66-TSSOP (0.400", 10.16mm Width)	在庫6,132	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
IS43TR81280B-125JBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	パッケージ: 78-TFBGA	在庫7,296	DRAM	SDRAM - DDR3	1Gb (128M x 8)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
IS43DR81280C-3DBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (10.5x8)	パッケージ: 60-TFBGA	在庫4,176	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (10.5x8)
IS43TR81280BL-125JBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	パッケージ: 78-TFBGA	在庫7,632	DRAM	SDRAM - DDR3L	1Gb (128M x 8)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
IS61LF12836EC-7.5TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4.5MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫7,440	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61LPS25618EC-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4.5MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫6,416	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61LPS12836EC-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4.5MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	パッケージ: 100-LQFP	在庫6,828	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS43TR16640B-125JBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫7,272	DRAM	SDRAM - DDR3	1Gb (64M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43R16320F-6TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 167MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	パッケージ: 66-TSSOP (0.400", 10.16mm Width)	在庫6,792	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	167MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
IS43R16160F-6BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (8x13)	パッケージ: 60-TFBGA	在庫5,568	DRAM	SDRAM - DDR	256Mb (16M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (8x13)

IS25LQ080B-JKLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 8MBIT 104MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

パッケージ: 8-WDFN Exposed Pad

在庫12,204

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI - Quad I/O

104MHz

1ms

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

IS61NLP102436B-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 200MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫5,792

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS43DR82560C-25DBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 400MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (10.5x8)

パッケージ: 60-TFBGA

在庫6,448

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (10.5x8)

IS43DR82560C-3DBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 333MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (10.5x8)

パッケージ: 60-TFBGA

在庫6,432

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (10.5x8)

IS43LR32640A-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-LFBGA
Supplier Device Package: 90-WBGA (8x13)

パッケージ: 90-LFBGA

在庫4,352

DRAM

SDRAM - DDR

2Gb (64M x 32)

Parallel

166MHz

15ns

5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-LFBGA

90-WBGA (8x13)

IS61LPS51236B-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 200MHZ 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

パッケージ: 165-TBGA

在庫4,000

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

200MHz

-

3ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61NLP51236B-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 200MHZ 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

パッケージ: 165-TBGA

在庫7,568

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

200MHz

-

3ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS43DR16128C-3DBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 333MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

パッケージ: 84-TFBGA

在庫4,672

DRAM

SDRAM - DDR2

2Gb (128M x 16)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

IS61NLP51236B-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫4,336

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

200MHz

-

3ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61NLP102418B-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫6,000

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

200MHz

-

3ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61LF51236B-7.5TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫7,392

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS43LR32640A-6BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-LFBGA
Supplier Device Package: 90-WBGA (8x13)

パッケージ: 90-LFBGA

在庫4,768

DRAM

SDRAM - DDR

2Gb (64M x 32)

Parallel

166MHz

15ns

5ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

90-LFBGA

90-WBGA (8x13)

IS61LPS25636B-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫7,888

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61LPS51218B-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫7,088

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61LF51218B-7.5TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 7.5NS 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫6,560

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS43TR82560BL-125KBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

パッケージ: 78-TFBGA

在庫4,800

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

IS43DR82560C-3DBL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 333MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (10.5x8)

パッケージ: 60-TFBGA

在庫7,904

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-TWBGA (10.5x8)

IS43DR16128C-3DBL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 333MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

パッケージ: 84-TFBGA

在庫6,592

DRAM

SDRAM - DDR2

2Gb (128M x 16)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

IS43R86400F-5TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 64MX8 200MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

パッケージ: 66-TSSOP (0.400", 10.16mm Width)

在庫6,132

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

IS43TR81280B-125JBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

パッケージ: 78-TFBGA

在庫7,296

DRAM

SDRAM - DDR3

1Gb (128M x 8)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

IS43DR81280C-3DBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (10.5x8)

パッケージ: 60-TFBGA

在庫4,176

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (10.5x8)

IS43TR81280BL-125JBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

パッケージ: 78-TFBGA

在庫7,632

DRAM

SDRAM - DDR3L

1Gb (128M x 8)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

IS61LF12836EC-7.5TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫7,440

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61LPS25618EC-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫6,416

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61LPS12836EC-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

パッケージ: 100-LQFP

在庫6,828

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS43TR16640B-125JBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫7,272

DRAM

SDRAM - DDR3

1Gb (64M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43R16320F-6TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

パッケージ: 66-TSSOP (0.400", 10.16mm Width)

在庫6,792

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

167MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

IS43R16160F-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (8x13)

パッケージ: 60-TFBGA

在庫5,568

DRAM

SDRAM - DDR

256Mb (16M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (8x13)