ページ 5 - IXYS Integrated Circuits Division 製品 - PMIC - ゲートドライバ | Heisener Electronics
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IXYS Integrated Circuits Division 製品 - PMIC - ゲートドライバ

レコード 147
ページ  5/5
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXDD614D2TR
IXYS Integrated Circuits Division

14A 5LEAD TO-263 NON INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263 (D2Pak)
パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
在庫4,240
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263 (D2Pak)
IXDN630MYI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO263

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 9 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
在庫6,608
Single
1
IGBT, N-Channel, P-Channel MOSFET
9 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDN630MCI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 9 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
パッケージ: TO-220-5
在庫6,400
Single
1
IGBT, N-Channel, P-Channel MOSFET
9 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXDI630MYI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO263

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 9 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
在庫2,656
Single
1
IGBT, N-Channel, P-Channel MOSFET
9 V ~ 35 V
0.8V, 3.5V
30A, 30A
Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDI630YI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO263

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 12.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
在庫6,128
Single
1
IGBT, N-Channel, P-Channel MOSFET
12.5 V ~ 35 V
0.8V, 3.5V
30A, 30A
Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDI630MCI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 9 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
パッケージ: TO-220-5
在庫5,296
Single
1
IGBT, N-Channel, P-Channel MOSFET
9 V ~ 35 V
0.8V, 3.5V
30A, 30A
Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXDD630MCI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 9 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
パッケージ: TO-220-5
在庫3,232
Single
1
IGBT, N-Channel, P-Channel MOSFET
9 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
hot IXDD630CI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 12.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
パッケージ: TO-220-5
在庫25,032
Single
1
IGBT, N-Channel, P-Channel MOSFET
12.5 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXDI630CI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 12.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
パッケージ: TO-220-5
在庫5,792
Single
1
IGBT, N-Channel, P-Channel MOSFET
12.5 V ~ 35 V
0.8V, 3.5V
30A, 30A
Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXDN614YI
IXYS Integrated Circuits Division

14A 5LEAD TO-263 NON INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
在庫3,760
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDI614YI
IXYS Integrated Circuits Division

14A 5 LEAD TO-263 INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
在庫2,656
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDI614CI
IXYS Integrated Circuits Division

14A 5 PIN TO-220 INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Formed Leads
  • Supplier Device Package: TO-220-5
パッケージ: TO-220-5 Formed Leads
在庫2,064
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Formed Leads
TO-220-5
hot IXDN614SI
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫56,796
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot IXDI614SI
IXYS Integrated Circuits Division

14A 8LEAD SOIC EXP MTL INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫39,576
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot IXDD614SI
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INV W/ENAB

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫41,880
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDN614SITR
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫7,152
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDI614SITR
IXYS Integrated Circuits Division

14A 8LEAD SOIC EXP MTL INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫6,224
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDD614SITR
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INV W/ENAB

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫5,264
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IX2204NETR
IXYS Integrated Circuits Division

IC IGBT GATE DVR DUAL 16SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT
  • Voltage - Supply: -10 V ~ 25 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: 16-SOIC (0.154", 3.90mm Width)
在庫3,056
Independent
2
IGBT
-10 V ~ 25 V
0.8V, 2V
2A, 4A
Non-Inverting
-
-, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot IXDN609YI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO263-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
在庫19,368
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
hot IXDN609CI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO220-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Formed Leads
  • Supplier Device Package: TO-220-5
パッケージ: TO-220-5 Formed Leads
在庫12,384
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Formed Leads
TO-220-5
IXDI609CI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO220-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
パッケージ: TO-220-5
在庫4,816
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXDD609YI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO263-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263
パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
在庫7,872
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263
IXDN604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫6,528
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDI604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫5,184
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDF604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫3,008
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Inverting, Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDD604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫3,552
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP