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IXYS 製品 - ダイオード - 整流器 - シングル

レコード 504
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部品番号
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説明
パッケージ
在庫
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DPG60IM300PC-TRL
IXYS

DIODE GEN PURP 300V 60A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 300 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫9,669
300 V
60A
1.43 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 300 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
DSEP15-06AS-TUB
IXYS

DIODE GEN PURP 600V 15A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 12pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
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600 V
15A
2.04 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 600 V
12pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
DSEP15-06AS-TRL
IXYS

DIODE GEN PURP 600V 15A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 12pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
Request a Quote
600 V
15A
2.04 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
100 µA @ 600 V
12pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
DMA50P1600HB
IXYS

DIODE GEN PURP 1.6KV 50A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 19pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
Request a Quote
1600 V
50A
1.3 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
19pF @ 400V, 1MHz
Through Hole
TO-247-3
TO-247 (IXTH)
-55°C ~ 175°C
DMA10IM1600UZ-TRL
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
Request a Quote
1600 V
10A
1.26 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1600 V
4pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DMA10IM1600UZ-TUB
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫420
1600 V
10A
1.26 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1600 V
4pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
W4767MC220
IXYS

DIODE GEN PURP 2.2KV 4755A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 4755A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
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2200 V
4755A
1.05 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
26 µs
50 mA @ 2200 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 175°C
DHG40I4500KO
IXYS

DIODE GP 4.5KV 43A ISOPLUS264

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 43A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.45 µs
  • Current - Reverse Leakage @ Vr: 100 µA @ 4500 V
  • Capacitance @ Vr, F: 13pF @ 1.8kV, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS264™
  • Supplier Device Package: ISOPLUS264™
  • Operating Temperature - Junction: -40°C ~ 150°C
パッケージ: -
Request a Quote
4500 V
43A
3 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
1.45 µs
100 µA @ 4500 V
13pF @ 1.8kV, 1MHz
Through Hole
ISOPLUS264™
ISOPLUS264™
-40°C ~ 150°C
DSEP90-12AZ-TUB
IXYS

DIODE GEN PURP 1.2KV 90A TO268AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
  • Capacitance @ Vr, F: 48pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA (D3Pak-HV)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫90
1200 V
90A
2.69 V @ 90 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
1 mA @ 1200 V
48pF @ 600V, 1MHz
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA (D3Pak-HV)
-55°C ~ 175°C
DMA80I1600HA
IXYS

DIODE GEN PURP 1.6KV 80A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 43pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫8,064
1600 V
80A
1.17 V @ 80 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
43pF @ 400V, 1MHz
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
DPF30P600HR
IXYS

DIODE GEN PURP 600V 30A ISO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 500 µA @ 600 V
  • Capacitance @ Vr, F: 26pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
Request a Quote
600 V
30A
1.62 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
500 µA @ 600 V
26pF @ 400V, 1MHz
Through Hole
TO-247-3
ISO247
-55°C ~ 175°C
DSS16-01AS-TRL
IXYS

DIODE SCHOTTKY 100V 16A TO263AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
Request a Quote
100 V
16A
790 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
W108CED180
IXYS

DIODE GEN PURP 1.8KV 10815A W112

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 10815A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W112
  • Operating Temperature - Junction: -
パッケージ: -
Request a Quote
1800 V
10815A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
DO-200AE
W112
-
W108CED220
IXYS

DIODE GEN PURP 2.2KV 10815A W112

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 10815A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W112
  • Operating Temperature - Junction: -
パッケージ: -
Request a Quote
2200 V
10815A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
DO-200AE
W112
-
W1185LC420
IXYS

DIODE GEN PURP 4.2KV 1185A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4200 V
  • Current - Average Rectified (Io): 1185A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 4200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -55°C ~ 160°C
パッケージ: -
Request a Quote
4200 V
1185A
2.4 V @ 2420 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 4200 V
-
Clamp On
DO-200AB, B-PUK
W4
-55°C ~ 160°C
W1185LC450
IXYS

DIODE GEN PURP 4.5KV 1185A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1185A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -55°C ~ 160°C
パッケージ: -
Request a Quote
4500 V
1185A
2.4 V @ 2420 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 4500 V
-
Clamp On
DO-200AB, B-PUK
W4
-55°C ~ 160°C
DSEI120-12AZ-TUB
IXYS

DIODE GP 1.2KV 109A TO268AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 109A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
  • Operating Temperature - Junction: -40°C ~ 150°C
パッケージ: -
Request a Quote
1200 V
109A
1.8 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
3 mA @ 1200 V
-
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA
-40°C ~ 150°C
DSI30-16AS-TRL
IXYS

DIODE GEN PURP 1.6KV 30A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫7,659
1600 V
30A
1.29 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
10pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 175°C
DPG15I600APA
IXYS

PWR DIODE DISC-FRED TO-220AB / T

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
E3000EC45E
IXYS

DIODE GEN PURP 4.5KV 3410A W111

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 3410A
  • Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.25 µs
  • Current - Reverse Leakage @ Vr: 90 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W111
  • Operating Temperature - Junction: -40°C ~ 140°C
パッケージ: -
Request a Quote
4500 V
3410A
3.1 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
1.25 µs
90 mA @ 4500 V
-
Chassis Mount
DO-200AE
W111
-40°C ~ 140°C
DSEP12-12BZ-TUB
IXYS

DIODE GEN PURP 1.2KV 12A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 5pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫150
1200 V
12A
3.25 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
100 µA @ 1200 V
5pF @ 600V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DSEP12-12BZ-TRL
IXYS

DIODE GEN PURP 1.2KV 12A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 5pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
Request a Quote
1200 V
12A
3.25 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
100 µA @ 1200 V
5pF @ 600V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
W1032LC500
IXYS

DIODE GEN PURP 5KV 1032A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 5000 V
  • Current - Average Rectified (Io): 1032A
  • Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 2420 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 µs
  • Current - Reverse Leakage @ Vr: 30 mA @ 5000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 150°C
パッケージ: -
Request a Quote
5000 V
1032A
2.7 V @ 2420 A
Standard Recovery >500ns, > 200mA (Io)
30 µs
30 mA @ 5000 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 150°C
E2400EC45E
IXYS

DIODE GEN PURP 4.5KV 2490A W111

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 2490A
  • Voltage - Forward (Vf) (Max) @ If: 3.65 V @ 2400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.22 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W111
  • Operating Temperature - Junction: -40°C ~ 140°C
パッケージ: -
Request a Quote
4500 V
2490A
3.65 V @ 2400 A
Standard Recovery >500ns, > 200mA (Io)
1.22 µs
100 mA @ 4500 V
-
Chassis Mount
DO-200AE
W111
-40°C ~ 140°C
W7395ED450
IXYS

DIODE GEN PURP 2.7KV 7395A W112

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2700 V
  • Current - Average Rectified (Io): 7395A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 7000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 69 µs
  • Current - Reverse Leakage @ Vr: 120 mA @ 2700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W112
  • Operating Temperature - Junction: -40°C ~ 160°C
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2700 V
7395A
1.4 V @ 7000 A
Standard Recovery >500ns, > 200mA (Io)
69 µs
120 mA @ 2700 V
-
Chassis Mount
DO-200AE
W112
-40°C ~ 160°C
W7395ED480
IXYS

DIODE GEN PURP 2.88KV 7395A W112

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2880 V
  • Current - Average Rectified (Io): 7395A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 7000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 69 µs
  • Current - Reverse Leakage @ Vr: 120 mA @ 2880 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W112
  • Operating Temperature - Junction: -40°C ~ 160°C
パッケージ: -
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2880 V
7395A
1.4 V @ 7000 A
Standard Recovery >500ns, > 200mA (Io)
69 µs
120 mA @ 2880 V
-
Chassis Mount
DO-200AE
W112
-40°C ~ 160°C
W6360EC600
IXYS

DIODE GEN PURP 6KV 6395A W111

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6000 V
  • Current - Average Rectified (Io): 6395A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 73 µs
  • Current - Reverse Leakage @ Vr: 120 mA @ 6000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W111
  • Operating Temperature - Junction: -40°C ~ 150°C
パッケージ: -
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6000 V
6395A
1.4 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
73 µs
120 mA @ 6000 V
-
Chassis Mount
DO-200AE
W111
-40°C ~ 150°C
W1263YC250
IXYS

DIODE GEN PURP 2.5KV 1263A W2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 1263A
  • Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 17 µs
  • Current - Reverse Leakage @ Vr: 30 mA @ 2500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W2
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫6
2500 V
1263A
2.12 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
17 µs
30 mA @ 2500 V
-
Clamp On
DO-200AB, A-PUK
W2
-40°C ~ 175°C
W1263YC200
IXYS

DIODE GEN PURP 2KV 1263A W2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 1263A
  • Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 17 µs
  • Current - Reverse Leakage @ Vr: 30 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W2
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
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2000 V
1263A
2.12 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
17 µs
30 mA @ 2000 V
-
Clamp On
DO-200AB, A-PUK
W2
-40°C ~ 175°C
W1263YC160
IXYS

DIODE GEN PURP 1.6KV 1263A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 1263A
  • Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 17 µs
  • Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫33
1600 V
1263A
2.12 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
17 µs
30 mA @ 1600 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 175°C