ページ 130 - IXYS 製品 | Heisener Electronics
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IXYS 製品

レコード 5,468
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hot IXSH30N60CD1
IXYS

IGBT 600V 55A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 480V, 30A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
パッケージ: TO-247-3
在庫390,000
IXGH40N60A3D1
IXYS

IGBT 600V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫2,800
IXGT24N60C
IXYS

IGBT 600V 48A 150W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 15ns/75ns
  • Test Condition: 480V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫6,112
IXGH20N120IH
IXYS

IGBT 1200V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫7,632
IXGT32N170
IXYS

IGBT 1700V 75A 350W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
  • Power - Max: 350W
  • Switching Energy: 11mJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 45ns/270ns
  • Test Condition: 1020V, 32A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫3,776
VID125-12P1
IXYS

MOD IGBT BST/CHOP 1200V ECOPAC2

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 138A
  • Power - Max: 568W
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 125A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
パッケージ: ECO-PAC2
在庫5,328
MWI300-17E9
IXYS

MOD IGBT SIXPACK E+

  • IGBT Type: NPT
  • Configuration: Three Phase
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 500A
  • Power - Max: 2200W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 33nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E+
  • Supplier Device Package: E+
パッケージ: E+
在庫4,288
MUBW15-12T7
IXYS

MODULE IGBT CBI E2

  • IGBT Type: Trench
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Power - Max: 140W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
  • Current - Collector Cutoff (Max): 2.7mA
  • Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
パッケージ: E2
在庫2,320
MUBW10-06A7
IXYS

CONVERTER/BRAKE/INVERTER 1.9VCE

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Power - Max: 85W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
パッケージ: E2
在庫7,008
MMIX1F420N10T
IXYS

MOSFET N-CH 100V 334A SMPD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 670nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 680W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMPD
  • Package / Case: 24-PowerSMD, 21 Leads
パッケージ: 24-PowerSMD, 21 Leads
在庫7,280
hot IXFH16N80P
IXYS

MOSFET N-CH 800V 16A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫475,872
IXFP4N100P
IXYS

MOSFET N-CH 1000V 4A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫5,536
IXFT15N100Q3
IXYS

MOSFET N-CH 1000V 15A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫6,704
MCA500-22IO1
IXYS

SCR THRYRISTOR CA 2200V WC-500

  • Structure: Common Anode - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 2200V
  • Current - On State (It (AV)) (Max): 545A
  • Current - On State (It (RMS)) (Max): 1294A
  • Voltage - Gate Trigger (Vgt) (Max): 3V
  • Current - Gate Trigger (Igt) (Max): 300mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
  • Current - Hold (Ih) (Max): 1A
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: WC-500
パッケージ: WC-500
在庫3,696
VGO36-16IO7
IXYS

RECT BRIDGE 1PH 1600V ECOPAC1

  • Structure: Bridge, Single Phase - SCRs/Diodes (Layout 3)
  • Number of SCRs, Diodes: 2 SCRs, 2 Diodes
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 40A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Gate Trigger (Igt) (Max): 65mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
  • Current - Hold (Ih) (Max): 100mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
パッケージ: ECO-PAC1
在庫4,816
MLO230-16IO7
IXYS

MODULE AC CONTROL 1600V ECO-PAC2

  • Structure: 1-Phase Controller - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 105A
  • Current - On State (It (RMS)) (Max): 180A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
パッケージ: Module
在庫5,600
DSS2-40BB
IXYS

DIODE SCHOTTKY 40V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: DO-214AA, SMB
在庫3,472
hot DSEP60-12A
IXYS

DIODE GEN PURP 1.2KV 60A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.66V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 650µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-247-2
在庫7,536
hot VUO60-18NO3
IXYS

RECT BRIDGE 3PH 72A 1800V FO-F-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 72A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1800V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-F-B
  • Supplier Device Package: FO-F-B
パッケージ: FO-F-B
在庫6,912
IX4R11S3
IXYS

IC DRVR HALF BRIDGE 4A 16-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 35 V
  • Logic Voltage - VIL, VIH: 6V, 7V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 650V
  • Rise / Fall Time (Typ): 23ns, 22ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: 16-SOIC (0.295", 7.50mm Width)
在庫4,512
IXBA16N170AHV
IXYS

REVERSE CONDUCTING IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 40 A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
  • Power - Max: 150 W
  • Switching Energy: 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 65 nC
  • Td (on/off) @ 25°C: 15ns/250ns
  • Test Condition: 1360V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
パッケージ: -
在庫42
SRU6008DS2RP
IXYS

8 Amp High Temperature Sensitive

  • Voltage - Off State: -
  • Voltage - Gate Trigger (Vgt) (Max): -
  • Current - Gate Trigger (Igt) (Max): -
  • Voltage - On State (Vtm) (Max): -
  • Current - On State (It (AV)) (Max): -
  • Current - On State (It (RMS)) (Max): -
  • Current - Hold (Ih) (Max): -
  • Current - Off State (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): -
  • SCR Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
IXFK220N20X3
IXYS

MOSFET N-CH 200V 220A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264
  • Package / Case: TO-264-3, TO-264AA
パッケージ: -
在庫30
CLA16E1200PN
IXYS

SCR 1.2KV 16A TO220ABFP

  • Voltage - Off State: 1.2 kV
  • Voltage - Gate Trigger (Vgt) (Max): 1.3 V
  • Current - Gate Trigger (Igt) (Max): 30 mA
  • Voltage - On State (Vtm) (Max): 1.14 V
  • Current - On State (It (AV)) (Max): 10 A
  • Current - On State (It (RMS)) (Max): 16 A
  • Current - Hold (Ih) (Max): 60 mA
  • Current - Off State (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
  • SCR Type: Standard Recovery
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220ABFP
パッケージ: -
Request a Quote
DMA200YC1600NA
IXYS

DIODE MOD GP 1600V 200A SOT227B

  • Diode Configuration: 2 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 70 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
パッケージ: -
Request a Quote
FMP76-01T
IXYS

MOSFET N/P-CH 100V 54A I4-PAC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc), 62A (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V
  • Power - Max: 89W, 132W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUSi5-PAK™
  • Supplier Device Package: ISOPLUS i4-PAC™
パッケージ: -
Request a Quote
W2340JK150
IXYS

DIODE GEN PURP 1.5KV 2340A W113

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500 V
  • Current - Average Rectified (Io): 2340A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W113
  • Operating Temperature - Junction: -
パッケージ: -
Request a Quote
IXGT32N170-TRL
IXYS

IGBT 1700V 75A 350W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
  • Power - Max: 350 W
  • Switching Energy: 11mJ (off)
  • Input Type: Standard
  • Gate Charge: 155 nC
  • Td (on/off) @ 25°C: 45ns/270ns
  • Test Condition: 1020V, 32A, 2.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
パッケージ: -
在庫6,666