ページ 152 - IXYS 製品 | Heisener Electronics

部品番号	メーカ	説明	パッケージ	在庫
IXGY2N120	IXYS	IGBT 1200V 5A 25W TO252AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 5A Current - Collector Pulsed (Icm): 8A Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 5A Power - Max: 25W Switching Energy: 600µJ (off) Input Type: Standard Gate Charge: 9nC Td (on/off) @ 25°C: 15ns/300ns Test Condition: 960V, 2A, 150 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫5,136
IXYH10N170C	IXYS	IGBT 1.7KV 36A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 36A Current - Collector Pulsed (Icm): 84A Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A Power - Max: 280W Switching Energy: 1.4mJ (on), 700µJ (off) Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 14ns/130ns Test Condition: 850V, 10A, 10 Ohm, 15V Reverse Recovery Time (trr): 17ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXYH)	パッケージ: TO-247-3	在庫3,696
IXFT52N30Q TRL	IXYS	MOSFET N-CH TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 (IXFT) Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	在庫5,408
IXTA62N25T	IXYS	MOSFET N-CH 250V 62A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫2,160
IXFL30N120P	IXYS	MOSFET N-CH 1200V 18A I5-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak? Package / Case: ISOPLUSi5-Pak?	パッケージ: ISOPLUSi5-Pak?	在庫2,256
IXFR55N50	IXYS	MOSFET N-CH 500V 48A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	パッケージ: ISOPLUS247?	在庫97,200
IXFH60N60X	IXYS	MOSFET N-CH 600V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫6,736
IXFK80N65X2	IXYS	MOSFET N-CH 650V 80A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8245pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫6,288
IXFK64N60P3	IXYS	MOSFET N-CH 600V 64A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1130W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫7,312
IXFJ20N85X	IXYS	MOSFET N-CH 850V 9.5A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFJ) Package / Case: TO-247-3	パッケージ: TO-247-3	在庫6,656
IXFX98N50P3	IXYS	MOSFET N-CH 500V 98A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1300W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫7,776
MCD501-14IO1	IXYS	SCR THRYRISTOR 1400V WC-501 Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1400V Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): - Current - Hold (Ih) (Max): - Operating Temperature: 125°C (TJ) Mounting Type: Chassis Mount Package / Case: WC-501	パッケージ: WC-501	在庫6,816
MCMA65PD1200TB	IXYS	MOD THYRISTOR DUAL 12KV TO-240 Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 65A Current - On State (It (RMS)) (Max): 105A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 95mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1240A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	パッケージ: TO-240AA	在庫7,440
MCC26-14IO8B	IXYS	MODULE,DUAL THYRISTOR,2X50A,1500 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 32A Current - On State (It (RMS)) (Max): 50A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	パッケージ: TO-240AA	在庫4,608
CLA110MB1200NA	IXYS	MOD THYRISTOR DUAL 1200V SOT-227 Structure: 1-Phase Controller - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 50A Current - On State (It (RMS)) (Max): 110A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 40mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: SOT-227-4, miniBLOC	パッケージ: SOT-227-4, miniBLOC	在庫6,576
DSB20I15PA	IXYS	DIODE SCHOTTKY 15V 20A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 480mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 15V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-220-2	在庫5,776
HTZ120A38K	IXYS	DIODE MODULE 38KV 2A Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 38000V Current - Average Rectified (Io) (per Diode): 2A Voltage - Forward (Vf) (Max) @ If: 36.8V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 38000V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: Module	在庫6,432
DSEC29-02AS-TUBE	IXYS	DIODE ARRAY GP 200V 15A TO263 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 1.06V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 100µA @ 200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫7,600
DSSK70-008AR	IXYS	DIODE ARRAY SCHOTTKY 80V 35A Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 35A Voltage - Forward (Vf) (Max) @ If: 760mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 80V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	パッケージ: ISOPLUS247?	在庫7,320
VUB135-22NO1	IXYS	RECT BRIDGE 3PH 220V 135A E2 Diode Type: Three Phase (Braking) Technology: Standard Voltage - Peak Reverse (Max): 2200V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50A Current - Reverse Leakage @ Vr: 100µA @ 2200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	パッケージ: E2	在庫4,320
VUE35-12NO7	IXYS	DIODE BRIDGE FAST 1200V ECO-PAC1 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 2.73V @ 15A Current - Reverse Leakage @ Vr: 100µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	パッケージ: ECO-PAC1	在庫6,992
IX6R11P7	IXYS	IC BRIDGE DRIVER FOR N-CH MOSFET Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 35 V Logic Voltage - VIL, VIH: 6V, 9.6V Current - Peak Output (Source, Sink): 6A, 6A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 25ns, 17ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP	パッケージ: 14-DIP (0.300", 7.62mm)	在庫6,976
IXTA130N15X4	IXYS	MOSFET N-CH 150V 130A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	在庫1,722
K1270MA420	IXYS	SCR 4.2KV W77 Voltage - Off State: 4.2 kV Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Voltage - On State (Vtm) (Max): - Current - On State (It (AV)) (Max): 1270 A Current - On State (It (RMS)) (Max): - Current - Hold (Ih) (Max): - Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 16700A @ 50Hz SCR Type: Standard Recovery Operating Temperature: - Mounting Type: Clamp On Package / Case: TO-200AC, K-PUK Supplier Device Package: W77	パッケージ: -	Request a Quote
K1270MA450	IXYS	SCR 4.5KV W77 Voltage - Off State: 4.5 kV Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Voltage - On State (Vtm) (Max): - Current - On State (It (AV)) (Max): 1270 A Current - On State (It (RMS)) (Max): - Current - Hold (Ih) (Max): - Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 16700A @ 50Hz SCR Type: Standard Recovery Operating Temperature: - Mounting Type: Clamp On Package / Case: TO-200AC, K-PUK Supplier Device Package: W77	パッケージ: -	Request a Quote
IXFP12N65X3	IXYS	DISCRETE MOSFET 12A 650V X3 TO22 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote
IXTT1N250HV-TRL	IXYS	MOSFET N-CH 2500V 1.5A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXTT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	パッケージ: -	Request a Quote
IXFP16N85X	IXYS	IXFP16N85X FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote

IXGY2N120

IXYS

IGBT 1200V 5A 25W TO252AA

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 5A
Current - Collector Pulsed (Icm): 8A
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 5A
Power - Max: 25W
Switching Energy: 600µJ (off)
Input Type: Standard
Gate Charge: 9nC
Td (on/off) @ 25°C: 15ns/300ns
Test Condition: 960V, 2A, 150 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫5,136

IXYH10N170C

IXYS

IGBT 1.7KV 36A TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): 84A
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Power - Max: 280W
Switching Energy: 1.4mJ (on), 700µJ (off)
Input Type: Standard
Gate Charge: 46nC
Td (on/off) @ 25°C: 14ns/130ns
Test Condition: 850V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr): 17ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXYH)

パッケージ: TO-247-3

在庫3,696

IXFT52N30Q TRL

IXYS

MOSFET N-CH TO268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268 (IXFT)
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

在庫5,408

IXTA62N25T

IXYS

MOSFET N-CH 250V 62A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫2,160

IXFL30N120P

IXYS

MOSFET N-CH 1200V 18A I5-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUSi5-Pak?
Package / Case: ISOPLUSi5-Pak?

パッケージ: ISOPLUSi5-Pak?

在庫2,256

IXFR55N50

IXYS

MOSFET N-CH 500V 48A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

パッケージ: ISOPLUS247?

在庫97,200

IXFH60N60X

IXYS

MOSFET N-CH 600V 60A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫6,736

IXFK80N65X2

IXYS

MOSFET N-CH 650V 80A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8245pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫6,288

IXFK64N60P3

IXYS

MOSFET N-CH 600V 64A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1130W (Tc)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫7,312

IXFJ20N85X

IXYS

MOSFET N-CH 850V 9.5A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFJ)
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫6,656

IXFX98N50P3

IXYS

MOSFET N-CH 500V 98A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1300W (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫7,776

MCD501-14IO1

IXYS

SCR THRYRISTOR 1400V WC-501

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): -
Current - Hold (Ih) (Max): -
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: WC-501

パッケージ: WC-501

在庫6,816

MCMA65PD1200TB

IXYS

MOD THYRISTOR DUAL 12KV TO-240

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 65A
Current - On State (It (RMS)) (Max): 105A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 95mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1240A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

パッケージ: TO-240AA

在庫7,440

MCC26-14IO8B

IXYS

MODULE,DUAL THYRISTOR,2X50A,1500

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 32A
Current - On State (It (RMS)) (Max): 50A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

パッケージ: TO-240AA

在庫4,608

CLA110MB1200NA

IXYS

MOD THYRISTOR DUAL 1200V SOT-227

Structure: 1-Phase Controller - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 50A
Current - On State (It (RMS)) (Max): 110A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 40mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

在庫6,576

DSB20I15PA

IXYS

DIODE SCHOTTKY 15V 20A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 15V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-220-2

在庫5,776

HTZ120A38K

IXYS

DIODE MODULE 38KV 2A

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 38000V
Current - Average Rectified (Io) (per Diode): 2A
Voltage - Forward (Vf) (Max) @ If: 36.8V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 38000V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: Module

在庫6,432

DSEC29-02AS-TUBE

IXYS

DIODE ARRAY GP 200V 15A TO263

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 1.06V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫7,600

DSSK70-008AR

IXYS

DIODE ARRAY SCHOTTKY 80V 35A

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 35A
Voltage - Forward (Vf) (Max) @ If: 760mV @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 80V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

パッケージ: ISOPLUS247?

在庫7,320

VUB135-22NO1

IXYS

RECT BRIDGE 3PH 220V 135A E2

Diode Type: Three Phase (Braking)
Technology: Standard
Voltage - Peak Reverse (Max): 2200V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50A
Current - Reverse Leakage @ Vr: 100µA @ 2200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

パッケージ: E2

在庫4,320

VUE35-12NO7

IXYS

DIODE BRIDGE FAST 1200V ECO-PAC1

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 2.73V @ 15A
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

パッケージ: ECO-PAC1

在庫6,992

IX6R11P7

IXYS

IC BRIDGE DRIVER FOR N-CH MOSFET

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 35 V
Logic Voltage - VIL, VIH: 6V, 9.6V
Current - Peak Output (Source, Sink): 6A, 6A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 25ns, 17ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-DIP

パッケージ: 14-DIP (0.300", 7.62mm)

在庫6,976

IXTA130N15X4

IXYS

MOSFET N-CH 150V 130A TO263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

在庫1,722

K1270MA420

IXYS

SCR 4.2KV W77

Voltage - Off State: 4.2 kV
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Voltage - On State (Vtm) (Max): -
Current - On State (It (AV)) (Max): 1270 A
Current - On State (It (RMS)) (Max): -
Current - Hold (Ih) (Max): -
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 16700A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -
Mounting Type: Clamp On
Package / Case: TO-200AC, K-PUK
Supplier Device Package: W77

パッケージ: -

Request a Quote

K1270MA450

IXYS

SCR 4.5KV W77

Voltage - Off State: 4.5 kV
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Voltage - On State (Vtm) (Max): -
Current - On State (It (AV)) (Max): 1270 A
Current - On State (It (RMS)) (Max): -
Current - Hold (Ih) (Max): -
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 16700A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -
Mounting Type: Clamp On
Package / Case: TO-200AC, K-PUK
Supplier Device Package: W77

パッケージ: -

Request a Quote

IXFP12N65X3

IXYS

DISCRETE MOSFET 12A 650V X3 TO22

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

IXTT1N250HV-TRL

IXYS

MOSFET N-CH 2500V 1.5A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2500 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXTT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

パッケージ: -

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IXFP16N85X

IXYS

IXFP16N85X

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote