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IXYS |
IGBT 330V 90A 200W TO3P
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 330V
- Current - Collector (Ic) (Max): 90A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
- Power - Max: 200W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 69nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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パッケージ: TO-3P-3, SC-65-3 |
在庫5,712 |
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IXYS |
IGBT 600V 15A 85W ISOPLUS220
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 15A
- Current - Collector Pulsed (Icm): 48A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
- Power - Max: 85W
- Switching Energy: 90µJ (off)
- Input Type: Standard
- Gate Charge: 32nC
- Td (on/off) @ 25°C: 20ns/60ns
- Test Condition: 480V, 12A, 18 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220?
- Supplier Device Package: ISOPLUS220?
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パッケージ: ISOPLUS220? |
在庫3,648 |
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IXYS |
IGBT 3000V 29A 240W ISOPLUSI4
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 29A
- Current - Collector Pulsed (Icm): 240A
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
- Power - Max: 240W
- Switching Energy: 7.2mJ (on), 1.04mJ (off)
- Input Type: Standard
- Gate Charge: 208nC
- Td (on/off) @ 25°C: 32ns/390ns
- Test Condition: 1500V, 10A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 700ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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パッケージ: i4-Pac?-5 (3 leads) |
在庫7,264 |
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IXYS |
IGBT 600V 500A 1700W TO264
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 500A
- Current - Collector Pulsed (Icm): 1200A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
- Power - Max: 1700W
- Switching Energy: 2.7mJ (on), 3.5mJ (off)
- Input Type: Standard
- Gate Charge: 585nC
- Td (on/off) @ 25°C: 44ns/250ns
- Test Condition: 480V, 100A, 1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXGK)
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パッケージ: TO-264-3, TO-264AA |
在庫2,736 |
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IXYS |
IGBT 1000V 24A 100W TO220AB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000V
- Current - Collector (Ic) (Max): 24A
- Current - Collector Pulsed (Icm): 48A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
- Power - Max: 100W
- Switching Energy: 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 65nC
- Td (on/off) @ 25°C: 100ns/850ns
- Test Condition: 800V, 12A, 120 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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パッケージ: TO-220-3 |
在庫5,056 |
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IXYS |
IGBT 2500V 32A 250W I4PAC
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 2500V
- Current - Collector (Ic) (Max): 32A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
- Power - Max: 250W
- Switching Energy: 15mJ (on), 30mJ (off)
- Input Type: Standard
- Gate Charge: 142nC
- Td (on/off) @ 25°C: -
- Test Condition: 1500V, 19A, 47 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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パッケージ: i4-Pac?-5 (3 leads) |
在庫8,016 |
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MODULE IGBT CBI E1
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 18A
- Power - Max: 70W
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 10A
- Current - Collector Cutoff (Max): 500µA
- Input Capacitance (Cies) @ Vce: 850nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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パッケージ: E1 |
在庫7,360 |
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IXYS |
IGBT 1.2KV 420A MODULE
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 420A
- Power - Max: 1700W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
- Current - Collector Cutoff (Max): 3.3mA
- Input Capacitance (Cies) @ Vce: 17nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-Li
- Supplier Device Package: Y3-Li
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パッケージ: Y3-Li |
在庫3,504 |
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IXYS |
MOSFET N-CH 85V 152A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫7,536 |
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IXYS |
MOSFET N-CH 900V 0.25A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 133pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫6,224 |
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IXYS |
MOSFET N-CH PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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パッケージ: TO-247-3 |
在庫3,040 |
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IXYS |
MOSFET N-CH 1000V 12A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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パッケージ: TO-247-3 |
在庫4,304 |
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IXYS |
MOSFET N-CH 150V 48A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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パッケージ: TO-247-3 |
在庫7,648 |
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IXYS |
MOSFET N-CH 600V 15A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 166W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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パッケージ: ISOPLUS247? |
在庫3,600 |
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IXYS |
MOSFET N-CH 500V 6A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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パッケージ: TO-220-3 |
在庫7,440 |
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IXYS |
MOSFET P-CH 150V 10A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫3,200 |
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MOSFET N-CH 850V 14A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB (IXFP)
- Package / Case: TO-220-3
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パッケージ: TO-220-3 |
在庫4,160 |
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IXYS |
MOSFET N-CH 40V 100A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2690pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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パッケージ: TO-220-3 |
在庫13,608 |
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IXYS |
MOD THYRISTOR DUAL 1200V WC-500
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 545A
- Current - On State (It (RMS)) (Max): 1294A
- Voltage - Gate Trigger (Vgt) (Max): 3V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
- Current - Hold (Ih) (Max): 1A
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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パッケージ: WC-500 |
在庫3,904 |
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IXYS |
SCR THYRISTOR CA 1600V WC-500
- Structure: Common Cathode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 700A
- Current - On State (It (RMS)) (Max): 1331A
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
- Current - Hold (Ih) (Max): -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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パッケージ: WC-500 |
在庫5,984 |
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IXYS |
MOD THYRISTOR/DIODE 2200V Y2-DCB
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 2200V
- Current - On State (It (AV)) (Max): 320A
- Current - On State (It (RMS)) (Max): 500A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
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パッケージ: Y2-DCB |
在庫4,224 |
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IXYS |
MOD THYRISTOR DUAL 1200V Y4-M6
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 130A
- Current - On State (It (RMS)) (Max): 300A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
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パッケージ: Y4-M6 |
在庫5,088 |
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IXYS |
RECT BRIDGE 3PH 1600V FO-T-A
- Structure: Bridge, 3-Phase - All SCRs
- Number of SCRs, Diodes: 6 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 70A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
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パッケージ: FO-T-A |
在庫6,176 |
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IXYS |
MOD THYRISTOR/DIO 2000V TO-240AA
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 2000V
- Current - On State (It (AV)) (Max): 104A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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パッケージ: TO-240AA |
在庫6,672 |
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IXYS |
RECT BRIDGE 1PH 1200V FO-T-A
- Structure: Bridge, Single Phase - All SCRs
- Number of SCRs, Diodes: 4 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 53A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
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パッケージ: FO-T-A |
在庫3,232 |
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IXYS |
DIODE MODULE 1.4KV 113A TO240AA
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io) (per Diode): 113A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 1400V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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パッケージ: TO-240AA |
在庫6,400 |
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IXYS |
RECT BRIDG 3PH 127A 1600V PWS-E1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 127A
- Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
- Current - Reverse Leakage @ Vr: 100µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E1
- Supplier Device Package: PWS-E1
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パッケージ: PWS-E1 |
在庫5,680 |
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IXYS |
IC MOSFET DRIVER SYNC BUCK 10QFN
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 5.5 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 24V
- Rise / Fall Time (Typ): 20ns, 15ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFQFN Exposed Pad
- Supplier Device Package: 10-QFN (3x3)
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パッケージ: 10-VFQFN Exposed Pad |
在庫2,416 |
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IXYS |
BREAKOVER DIODE
- Voltage - Breakover: 500V
- Voltage - Off State: -
- Voltage - On State: -
- Current - Peak Pulse (8/20µs): -
- Current - Peak Pulse (10/1000µs): -
- Current - Hold (Ih): 20mA
- Number of Elements: 1
- Capacitance: -
- Mounting Type: Through Hole
- Package / Case: Radial
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パッケージ: Radial |
在庫8,748 |
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IXYS |
IC SGL DIODE BOD 0.9A 1000V FP
- Voltage - Clamping: 1000V (1kV)
- Technology: Mixed Technology
- Number of Circuits: 1
- Number of Circuits: 1
- Applications: High Voltage
- Mounting Type: Through Hole
- Package / Case: Radial
- Supplier Device Package: FP-Case
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パッケージ: Radial |
在庫6,396 |
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