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IXYS |
IGBT 600V 48A 150W TO263AA
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 48A
- Current - Collector Pulsed (Icm): 96A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
- Power - Max: 150W
- Switching Energy: 240µJ (off)
- Input Type: Standard
- Gate Charge: 55nC
- Td (on/off) @ 25°C: 15ns/75ns
- Test Condition: 480V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (IXGA)
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パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫5,856 |
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IXYS |
IGBT 1200V 70A 250W ISOPLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 140A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
- Power - Max: 250W
- Switching Energy: 5mJ (off)
- Input Type: Standard
- Gate Charge: 120nC
- Td (on/off) @ 25°C: 36ns/160ns
- Test Condition: 960V, 35A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): 40ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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パッケージ: ISOPLUS247? |
在庫2,192 |
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IXYS |
IGBT 600V 20A 100W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): 30A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 100W
- Switching Energy: 430µJ (off)
- Input Type: Standard
- Gate Charge: 17nC
- Td (on/off) @ 25°C: 30ns/180ns
- Test Condition: 480V, 10A, 30 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXSH)
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パッケージ: TO-247-3 |
在庫3,568 |
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IXYS |
IGBT 600V 75A 300W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Power - Max: 300W
- Switching Energy: 3mJ (off)
- Input Type: Standard
- Gate Charge: 160nC
- Td (on/off) @ 25°C: 50ns/150ns
- Test Condition: 480V, 50A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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パッケージ: TO-247-3 |
在庫6,608 |
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IXYS |
IGBT 1200V 70A 200W ISOPLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 330A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A
- Power - Max: 200W
- Switching Energy: 5.1mJ (on), 13.3mJ (off)
- Input Type: Standard
- Gate Charge: 185nC
- Td (on/off) @ 25°C: 23ns/365ns
- Test Condition: 960V, 55A, 3 Ohm, 15V
- Reverse Recovery Time (trr): 200ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247?
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パッケージ: TO-247-3 |
在庫3,344 |
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IXYS |
IGBT 1200V 48A 250W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 48A
- Current - Collector Pulsed (Icm): 115A
- Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
- Power - Max: 250W
- Switching Energy: 1.45mJ (on), 470µJ (off)
- Input Type: Standard
- Gate Charge: 80nC
- Td (on/off) @ 25°C: 18ns/106ns
- Test Condition: 600V, 24A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 70ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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パッケージ: TO-247-3 |
在庫400,800 |
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IXYS |
IGBT 320V 96A TO3P
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 320V
- Current - Collector (Ic) (Max): 96A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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パッケージ: TO-3P-3, SC-65-3 |
在庫3,344 |
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IXYS |
IGBT 650V 150A 455W ISOPLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 150A
- Current - Collector Pulsed (Icm): 460A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
- Power - Max: 455W
- Switching Energy: 2.2mJ (on), 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 183nC
- Td (on/off) @ 25°C: 38ns/156ns
- Test Condition: 400V, 55A, 2 Ohm, 15V
- Reverse Recovery Time (trr): 100ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247?
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パッケージ: TO-247-3 |
在庫7,168 |
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IXYS |
MOSFET N-CH 55V 220A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 430W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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パッケージ: TO-220-3 |
在庫6,800 |
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IXYS |
MOSFET N-CH 500V 14A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-3P-3 Full Pack
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パッケージ: TO-3P-3 Full Pack |
在庫14,988 |
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MOSFET N-CH 1000V 27A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 27A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 690W (Tc)
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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パッケージ: SOT-227-4, miniBLOC |
在庫2,608 |
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IXYS |
MOSFET N-CH 1000V 26A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Rds On (Max) @ Id, Vgs: 390 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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パッケージ: TO-247-3 |
在庫5,808 |
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IXYS |
MOSFET N-CH 85V 50A TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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パッケージ: TO-251-3 Short Leads, IPak, TO-251AA |
在庫6,928 |
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IXYS |
MOSFET N-CH 800V 7A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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パッケージ: TO-247-3 |
在庫5,360 |
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IXYS |
MOSFET NCH 850V 40A TO268HV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 860W (Tc)
- Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
在庫6,128 |
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IXYS |
SCR PHASE CONTROL 1600V 25A TO48
- Voltage - Off State: 1600V
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 50mA
- Voltage - On State (Vtm) (Max): 1.8V
- Current - On State (It (AV)) (Max): 32A
- Current - On State (It (RMS)) (Max): 50A
- Current - Hold (Ih) (Max): 100mA
- Current - Off State (Max): 3mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 450A, 480A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis, Stud Mount
- Package / Case: TO-208AA, TO-48-3, Stud
- Supplier Device Package: TO-208AA (TO-48)
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パッケージ: TO-208AA, TO-48-3, Stud |
在庫3,840 |
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IXYS |
SCR THYRISTOR CA 1400V WC-500
- Structure: Common Cathode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 545A
- Current - On State (It (RMS)) (Max): 1294A
- Voltage - Gate Trigger (Vgt) (Max): 3V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
- Current - Hold (Ih) (Max): 1A
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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パッケージ: WC-500 |
在庫2,720 |
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IXYS |
SCR THRYRISTOR 1400V WC-501
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-501
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パッケージ: WC-501 |
在庫6,816 |
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IXYS |
MOD THYRISTOR/DIODE 1400V Y2-DCB
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 320A
- Current - On State (It (RMS)) (Max): 500A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
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パッケージ: Y2-DCB |
在庫7,536 |
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IXYS |
MOD THYRISTOR DUAL 1400V TO240AA
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 64A
- Current - On State (It (RMS)) (Max): 100A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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パッケージ: TO-240AA |
在庫2,304 |
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IXYS |
MOD THYRISTOR DUAL 1200V TO240AA
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 32A
- Current - On State (It (RMS)) (Max): 50A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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パッケージ: TO-240AA |
在庫5,280 |
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IXYS |
DIODE SCHOTTKY 180V 23A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 180V
- Current - Average Rectified (Io): 23A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 7.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 180V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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パッケージ: TO-220-2 |
在庫6,416 |
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IXYS |
DIODE GEN PURP 300V 30A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 300V
- Capacitance @ Vr, F: 42pF @ 150V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -55°C ~ 175°C
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パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
在庫3,456 |
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IXYS |
DIODE MODULE 38KV 1A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 38000V
- Current - Average Rectified (Io) (per Diode): 1A
- Voltage - Forward (Vf) (Max) @ If: 24V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 38000V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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パッケージ: Module |
在庫5,312 |
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IXYS |
DIODE MODULE 16KV 1.7A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 16000V
- Current - Average Rectified (Io) (per Diode): 1.7A
- Voltage - Forward (Vf) (Max) @ If: 10V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 16800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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パッケージ: Module |
在庫6,368 |
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IXYS |
DIODE MODULE 800V 116A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io) (per Diode): 116A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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パッケージ: TO-240AA |
在庫6,832 |
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IXYS |
DIODE ARRAY SCHOTTKY 150V TO220
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 790mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 150V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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パッケージ: TO-220-3 |
在庫46,800 |
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IXYS |
IC MOD DIODE 1PHASE BRIDGE UGB1
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 10500V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: UGB-1
- Supplier Device Package: UGB-1
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パッケージ: UGB-1 |
在庫4,336 |
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IXYS |
RECT BRIDGE 3PH 1200V ECO-PAC1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 28A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
- Current - Reverse Leakage @ Vr: 300µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
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パッケージ: ECO-PAC1 |
在庫7,920 |
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IXYS |
SENSOR MONOCRYSTALLINE MODULE
- Power (Watts) - Max: 18mW
- Current @ Pmpp: 11.7mA
- Voltage @ Pmpp: 1.53V
- Current Short Circuit (Isc): 12.6mA
- Type: Monocrystalline
- Voltage - Open Circuit: 1.89V
- Operating Temperature: -
- Package / Case: Cells
- Size / Dimension: 0.866" L x 0.276" W x 0.063" H (22.00mm x 7.00mm x 1.60mm)
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パッケージ: Cells |
在庫6,156 |
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