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IXYS 製品

レコード 5,468
ページ  3/183
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hot IXGH24N60C
IXYS

IGBT 600V 48A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 15ns/75ns
  • Test Condition: 480V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
パッケージ: TO-247-3
在庫103,464
IXGX32N170AH1
IXYS

IGBT 1700V 32A 350W PLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
  • Power - Max: 350W
  • Switching Energy: 4.1mJ (on), 1.25mJ (off)
  • Input Type: Standard
  • Gate Charge: 157nC
  • Td (on/off) @ 25°C: 27ns/270ns
  • Test Condition: 850V, 32A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
パッケージ: TO-247-3
在庫4,448
IXGT6N170AHV
IXYS

IGBT 1700V 6A 75W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 14A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
  • Power - Max: 75W
  • Switching Energy: 590µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.5nC
  • Td (on/off) @ 25°C: 46ns/220ns
  • Test Condition: 850V, 6A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫3,536
IXYT80N90C3
IXYS

IGBT 900V 165A 830W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 165A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
  • Power - Max: 830W
  • Switching Energy: 4.3mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 34ns/90ns
  • Test Condition: 450V, 80A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫5,680
IXBF12N300
IXYS

IGBT 3000V 26A 125W ISOPLUSI4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 26A
  • Current - Collector Pulsed (Icm): 98A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.4µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
パッケージ: i4-Pac?-5 (3 leads)
在庫6,640
MWI80-12T6K
IXYS

MOD IGBT SIXPACK RBSOA 1200V E1

  • IGBT Type: Trench
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 270W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E1
  • Supplier Device Package: E1
パッケージ: E1
在庫7,952
IXYN82N120C3
IXYS

IGBT XPT 1200V 105A SOT-227B

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 105A
  • Power - Max: 500W
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
  • Current - Collector Cutoff (Max): 25µA
  • Input Capacitance (Cies) @ Vce: 4.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
パッケージ: SOT-227-4, miniBLOC
在庫5,712
IXTH280N055T
IXYS

MOSFET N-CH 55V 280A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫6,960
IXTH250N075T
IXYS

MOSFET N-CH 75V 250A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫3,872
IXFH10N90
IXYS

MOSFET N-CH 900V 10A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫4,704
IXFX38N80Q2
IXYS

MOSFET N-CH 800V 38A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 735W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫6,768
MKE38RK600DFELB-TRR
IXYS

MOSFET N-CH 600V 50A SMPD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ISOPLUS-SMPD?.B
  • Package / Case: 9-SMD Module
パッケージ: 9-SMD Module
在庫3,920
IXTH2N170D2
IXYS

MOSFET N-CH 1700V 2A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫4,368
IXTK82N25P
IXYS

MOSFET N-CH 250V 82A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 41A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
パッケージ: TO-264-3, TO-264AA
在庫6,832
hot IXTP06N120P
IXYS

MOSFET N-CH 1200V 600MA TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫30,000
IXTP3N100P
IXYS

MOSFET N-CH 1000V 3A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫3,600
IXFP10N60P
IXYS

MOSFET N-CH 600V 10A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 740 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫4,864
IXTY08N100P
IXYS

MOSFET N-CH 1000V 800MA TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫7,568
IXTT1N300P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 3000V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 195W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫7,376
IXTT60N20L2
IXYS

MOSFET N-CH 200V 60A TO268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫6,456
IXTA64N10L2
IXYS

N-CHANNEL: LINEAR POWER MOSFETS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 64A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫7,320
VVZ12-12IO1
IXYS

RECT BRIDGE 3PH 20A 1200V KAMM

  • Structure: Bridge, 3-Phase - SCRs/Diodes
  • Number of SCRs, Diodes: 3 SCRs, 3 Diodes
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 20A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Gate Trigger (Igt) (Max): 65mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 110A, 115A
  • Current - Hold (Ih) (Max): 100mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: KAMM
パッケージ: KAMM
在庫2,736
MCD56-16IO8B
IXYS

MOD THYRISTOR/DIO 1600V TO-240AA

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 64A
  • Current - On State (It (RMS)) (Max): 100A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
パッケージ: TO-240AA
在庫3,584
MLO175-16IO7
IXYS

MODULE AC CONTROL 1600V ECO-PAC1

  • Structure: 1-Phase Controller - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 80A
  • Current - On State (It (RMS)) (Max): 125A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
パッケージ: Module
在庫3,808
hot DSEP30-04A
IXYS

DIODE GEN PURP 400V 30A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.46V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 250µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-247-2
在庫16,020
DGS10-018AS-TUBE
IXYS

DIODE SCHOTTKY 180V 15A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 180V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.3mA @ 180V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫7,568
DSA30I100PA
IXYS

DIODE SCHOTTKY 100V 30A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 900µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-220-2
在庫6,128
hot DSI2X55-12A
IXYS

DIODE MODULE 1.2KV 56A SOT227B

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 56A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
パッケージ: SOT-227-4, miniBLOC
在庫6,672
IXDE509SIA
IXYS

IC GATE DRIVER 9A 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫7,888
IXCY100M35
IXYS

IC CURRENT REGULATOR DPAK

  • Function: Current Regulator
  • Sensing Method: -
  • Accuracy: -
  • Voltage - Input: -
  • Current - Output: 100mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫6,368