IXYS 製品

IXGQ90N33TC

IXYS

IGBT 330V 90A 200W TO3P

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 330V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
• Power - Max: 200W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 69nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

パッケージ: TO-3P-3, SC-65-3

IXGH28N60B3D1

IXYS

IGBT 600V 66A 190W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 66A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
• Power - Max: 190W
• Switching Energy: 340µJ (on), 650µJ (off)
• Input Type: Standard
• Gate Charge: 62nC
• Td (on/off) @ 25°C: 19ns/125ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

パッケージ: TO-247-3

IXYH40N65C3H1

IXYS

IGBT 650V 80A 300W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
• Power - Max: 300W
• Switching Energy: 860µJ (on), 400µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 26ns/106ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 120ns
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

パッケージ: TO-247-3

MUBW10-06A6K

IXYS

MODULE IGBT CBI E1

• IGBT Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11A
• Power - Max: 50W
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 10A
• Current - Collector Cutoff (Max): 65µA
• Input Capacitance (Cies) @ Vce: 0.22nF @ 25V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E1
• Supplier Device Package: E1

パッケージ: E1

IXFN80N50Q2

IXYS

MOSFET N-CH 500V 80A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 80A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 890W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

IXTT500N04T2

IXYS

MOSFET N-CH 40V 500A TO-268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 405nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 25000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1000W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT21N50Q

IXYS

MOSFET N-CH 500V 21A TO-268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 280W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 10.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTP2N80

IXYS

MOSFET N-CH 800V 2A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 54W (Tc)
• Rds On (Max) @ Id, Vgs: 6.2 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: TO-220-3

IXTP1N100P

IXYS

MOSFET N-CH 1000V 1A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: TO-220-3

IXFH24N90P

IXYS

MOSFET N-CH TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 660W (Tc)
• Rds On (Max) @ Id, Vgs: 420 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

パッケージ: TO-247-3

IXFN56N90P

IXYS

MOSFET N-CH 900V 56A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 56A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1000W (Tc)
• Rds On (Max) @ Id, Vgs: 135 mOhm @ 28A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

DH60-14A

IXYS

DIODE GEN PURP 1.4KV 60A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 230ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Capacitance @ Vr, F: 32pF @ 1200V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-247-2

DSEI2X31-06P

IXYS

DIODE MODULE 600V 30A ECO-PAC1

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

パッケージ: ECO-PAC1

DPH30IS600HI

IXYS

DIODE ARRAY 600V 30A ISOPLUS247

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.48V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

パッケージ: ISOPLUS247?

VBO105-14NO7

IXYS

DIODE BRIDGE 1400V 107A PWS-C

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 107A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-C
• Supplier Device Package: PWS-C

パッケージ: PWS-C

VUO50-14NO3

IXYS

RECT BRIDGE 3PH 58A 1400V FO-F-B

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 58A
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1400V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-F-B
• Supplier Device Package: FO-F-B

パッケージ: FO-F-B

IXDN509D1T/R

IXYS

IC GATE DRIVER SGL 9A 6-DFN

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 2.4V
• Current - Peak Output (Source, Sink): 9A, 9A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 23ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-DFN (4x5)

パッケージ: 6-VDFN Exposed Pad

IXDI502SIA

IXYS

IC GATE DRIVER DUAL 2A 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 7.5ns, 6.5ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IXCP02M35A

IXYS

IC CURRENT REGULATOR TO220AB

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 2mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

IXBOD1-19RD

IXYS

IC DIODE MODULE BOD 0.2A 1900V

• Voltage - Clamping: 1900V (1.9kV)
• Technology: Mixed Technology
• Number of Circuits: 2
• Number of Circuits: 2
• Applications: High Voltage
• Mounting Type: PCB, Through Hole
• Package / Case: Radial
• Supplier Device Package: BOD

パッケージ: Radial

IX6610TR

IXYS

IC MOSF DRIVER

• Applications: Transformer Driver
• Current - Supply: 1mA
• Voltage - Supply: 14 V ~ 15.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 28-TSSOP

パッケージ: 28-TSSOP (0.173", 4.40mm Width)

IXYH8N250CHV

IXYS

IGBT 2500V 29A TO247HV

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500 V
• Current - Collector (Ic) (Max): 29 A
• Current - Collector Pulsed (Icm): 70 A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
• Power - Max: 280 W
• Switching Energy: 2.6mJ (on), 1.07mJ (off)
• Input Type: Standard
• Gate Charge: 45 nC
• Td (on/off) @ 25°C: 11ns/180ns
• Test Condition: 1250V, 8A, 15Ohm, 15V
• Reverse Recovery Time (trr): 5 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: TO-247HV

パッケージ: -

IXTM67N10

IXYS

MOSFET N-CH 100V 67A TO204AE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-204AE
• Package / Case: TO-204AE

パッケージ: -

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DLA10IM800UC-TRL

IXYS

DIODE GEN PURP 800V 10A TO252AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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DMA80IM1600HB

IXYS

DIODE GEN PURP 1.6KV 80A TO247

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io): 80A
• Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
• Capacitance @ Vr, F: 43pF @ 400V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

IXFH98N60X3

IXYS

MOSFET ULTRA JCT 600V 98A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 49A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

パッケージ: -

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IXYN75N65C3D1

IXYS

IGBT 650V 150A SOT227B

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): 360 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
• Power - Max: 600 W
• Switching Energy: 2mJ (on), 950µJ (off)
• Input Type: Standard
• Gate Charge: 122 nC
• Td (on/off) @ 25°C: 26ns/93ns
• Test Condition: 400V, 60A, 3Ohm, 15V
• Reverse Recovery Time (trr): 65 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

パッケージ: -

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MCNA220P2200YA

IXYS

BIPOLAR MODULE - THYRISTOR Y4-M

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 220 A
• Current - On State (It (RMS)) (Max): 345 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y4-M6

パッケージ: -