ページ 95 - IXYS 製品 | Heisener Electronics

部品番号	メーカ	説明	パッケージ	在庫
IXBH14N250	IXYS	IGBT 2500V TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	パッケージ: TO-247-3	在庫3,408
IXGR55N120A3H1	IXYS	IGBT 1200V 70A 200W ISOPLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 330A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A Power - Max: 200W Switching Energy: 5.1mJ (on), 13.3mJ (off) Input Type: Standard Gate Charge: 185nC Td (on/off) @ 25°C: 23ns/365ns Test Condition: 960V, 55A, 3 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247?	パッケージ: TO-247-3	在庫3,344
IXGH28N120BD1	IXYS	IGBT 1200V 50A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A Power - Max: 250W Switching Energy: 2.2mJ (off) Input Type: Standard Gate Charge: 92nC Td (on/off) @ 25°C: 30ns/210ns Test Condition: 960V, 28A, 5 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	パッケージ: TO-247-3	在庫480,156
IXGH30N120C3H1	IXYS	IGBT 1200V 48A 250W TO247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 115A Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A Power - Max: 250W Switching Energy: 1.45mJ (on), 470µJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 18ns/106ns Test Condition: 600V, 24A, 5 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	パッケージ: TO-247-3	在庫400,800
IXDP35N60B	IXYS	IGBT 600V 60A 250W TO220AB IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 70A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A Power - Max: 250W Switching Energy: 1.6mJ (on), 800µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: - Test Condition: 300V, 35A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫7,888
IXTQ220N075T	IXYS	MOSFET N-CH 75V 220A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	パッケージ: TO-3P-3, SC-65-3	在庫3,216
IXTP50N085T	IXYS	MOSFET N-CH 85V 50A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫3,488
IXFV18N60P	IXYS	MOSFET N-CH 600V 18A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	パッケージ: TO-220-3, Short Tab	在庫6,624
IXFN170N30P	IXYS	MOSFET N-CH 300V 138A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 138A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	パッケージ: SOT-227-4, miniBLOC	在庫3,936
IXFL34N100	IXYS	MOSFET N-CH 1000V 30A ISOPLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUS264?	パッケージ: ISOPLUS264?	在庫5,504
IXTK140N30P	IXYS	MOSFET N-CH 300V 140A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫5,184
IXFK32N100P	IXYS	MOSFET N-CH 1000V 32A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫6,496
IXTA18P10T	IXYS	MOSFET P-CH 100V 18A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫7,040
IXTP05N100P	IXYS	MOSFET N-CH 1000V 500MA TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 30 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫2,576
IXFP14N85X	IXYS	MOSFET N-CH 850V 14A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	パッケージ: TO-220-3	在庫4,160
275-101N30A-00	IXYS	RF MOSFET N-CHANNEL DE275 Transistor Type: N-Channel Frequency: - Gain: - Voltage - Test: - Current Rating: 25µA Noise Figure: - Current - Test: - Power - Output: 550W Voltage - Rated: 100V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE275	パッケージ: 6-SMD, Flat Lead Exposed Pad	在庫7,584
DSA300I200NA	IXYS	DIODE MODULE 200V 300A SOT227B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.03V @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 200V Capacitance @ Vr, F: 2220pF @ 24V, 1MHz Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B Operating Temperature - Junction: -	パッケージ: SOT-227-4, miniBLOC	在庫3,360
DHG100X600NA	IXYS	DIODE MODULE 600V 100A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	パッケージ: SOT-227-4, miniBLOC	在庫3,312
VUO52-20NO1	IXYS	RECT BRIDGE 3PH 54A 2000V V1-A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 2000V Current - Average Rectified (Io): 54A Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A Current - Reverse Leakage @ Vr: 40µA @ 2000V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V1-A Supplier Device Package: V1-A	パッケージ: V1-A	在庫4,160
IXDD430YI	IXYS	IC DRVR MOSF/IGBT 30A TO263-5 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 8.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 30A, 30A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 18ns, 16ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA Supplier Device Package: TO-263 (D2Pak)	パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	在庫6,800
IXRFD630	IXYS	IC MOSFET DVR RF 30A HI DCB Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 8 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 30A, 30A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 4ns, 4ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: -	パッケージ: 6-SMD, Flat Lead Exposed Pad	在庫12,816
IXBOD1-23R	IXYS	IC DIODE MODULE BOD 0.9A 2300V Voltage - Clamping: 2300V (2.3kV) Technology: Mixed Technology Number of Circuits: 3 Number of Circuits: 3 Applications: High Voltage Mounting Type: PCB, Through Hole Package / Case: Radial Supplier Device Package: BOD	パッケージ: Radial	在庫3,186
CLA50E1200TC-TUB	IXYS	SCR 1.2KV 80A TO268AA Voltage - Off State: 1.2 kV Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 50 mA Voltage - On State (Vtm) (Max): 1.6 V Current - On State (It (AV)) (Max): 50 A Current - On State (It (RMS)) (Max): 80 A Current - Hold (Ih) (Max): 75 mA Current - Off State (Max): 50 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 590A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA	パッケージ: -	Request a Quote
DMA50P1600HB	IXYS	DIODE GEN PURP 1.6KV 50A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 1600 V Capacitance @ Vr, F: 19pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	Request a Quote
IXGA20N120B3-TRL	IXYS	IXGA20N120B3 TRL IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 36 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A Power - Max: 180 W Switching Energy: 920µJ (on), 560µJ (off) Input Type: Standard Gate Charge: 51 nC Td (on/off) @ 25°C: 16ns/150ns Test Condition: 600V, 16A, 15Ohm, 15V Reverse Recovery Time (trr): 31 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	パッケージ: -	Request a Quote
IXXT100N75B4HV	IXYS	IGBT DISCRETE TO-268HV IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
IXTA230N075T2-TRL	IXYS	MOSFET N-CH 75V 230A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	Request a Quote
N7585FE240	IXYS	SCR 2.4KV W119 Voltage - Off State: 2.4 kV Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Voltage - On State (Vtm) (Max): - Current - On State (It (AV)) (Max): 7535 A Current - On State (It (RMS)) (Max): - Current - Hold (Ih) (Max): - Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 110000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: - Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W119	パッケージ: -	Request a Quote
MCC600-22IO1W	IXYS	MOD SCR THYRISTOR 2200V Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 2.2 kV Current - On State (It (AV)) (Max): 710 A Current - On State (It (RMS)) (Max): 1116 A Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A, 18200A Current - Hold (Ih) (Max): 1 A Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	パッケージ: -	Request a Quote
IXTH220N20X4	IXYS	MOSFET N-CH 200V 220A X4 TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISO TO-247-3 Package / Case: TO-247-3	パッケージ: -	Request a Quote

IXBH14N250

IXYS

IGBT 2500V TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)

パッケージ: TO-247-3

在庫3,408

IXGR55N120A3H1

IXYS

IGBT 1200V 70A 200W ISOPLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 330A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A
Power - Max: 200W
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Input Type: Standard
Gate Charge: 185nC
Td (on/off) @ 25°C: 23ns/365ns
Test Condition: 960V, 55A, 3 Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247?

パッケージ: TO-247-3

在庫3,344

IXGH28N120BD1

IXYS

IGBT 1200V 50A 250W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
Power - Max: 250W
Switching Energy: 2.2mJ (off)
Input Type: Standard
Gate Charge: 92nC
Td (on/off) @ 25°C: 30ns/210ns
Test Condition: 960V, 28A, 5 Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

パッケージ: TO-247-3

在庫480,156

IXGH30N120C3H1

IXYS

IGBT 1200V 48A 250W TO247AD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 115A
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A
Power - Max: 250W
Switching Energy: 1.45mJ (on), 470µJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 18ns/106ns
Test Condition: 600V, 24A, 5 Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

パッケージ: TO-247-3

在庫400,800

IXDP35N60B

IXYS

IGBT 600V 60A 250W TO220AB

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 70A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
Power - Max: 250W
Switching Energy: 1.6mJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: -
Test Condition: 300V, 35A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫7,888

IXTQ220N075T

IXYS

MOSFET N-CH 75V 220A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

在庫3,216

IXTP50N085T

IXYS

MOSFET N-CH 85V 50A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫3,488

IXFV18N60P

IXYS

MOSFET N-CH 600V 18A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

パッケージ: TO-220-3, Short Tab

在庫6,624

IXFN170N30P

IXYS

MOSFET N-CH 300V 138A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 138A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 85A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

在庫3,936

IXFL34N100

IXYS

MOSFET N-CH 1000V 30A ISOPLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS264?
Package / Case: ISOPLUS264?

パッケージ: ISOPLUS264?

在庫5,504

IXTK140N30P

IXYS

MOSFET N-CH 300V 140A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 24 mOhm @ 70A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫5,184

IXFK32N100P

IXYS

MOSFET N-CH 1000V 32A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫6,496

IXTA18P10T

IXYS

MOSFET P-CH 100V 18A TO-263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫7,040

IXTP05N100P

IXYS

MOSFET N-CH 1000V 500MA TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 30 Ohm @ 250mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫2,576

IXFP14N85X

IXYS

MOSFET N-CH 850V 14A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB (IXFP)
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫4,160

275-101N30A-00

IXYS

RF MOSFET N-CHANNEL DE275

Transistor Type: N-Channel
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: 25µA
Noise Figure: -
Current - Test: -
Power - Output: 550W
Voltage - Rated: 100V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: DE275

パッケージ: 6-SMD, Flat Lead Exposed Pad

在庫7,584

DSA300I200NA

IXYS

DIODE MODULE 200V 300A SOT227B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.03V @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 200V
Capacitance @ Vr, F: 2220pF @ 24V, 1MHz
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -

パッケージ: SOT-227-4, miniBLOC

在庫3,360

DHG100X600NA

IXYS

DIODE MODULE 600V 100A SOT227B

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

パッケージ: SOT-227-4, miniBLOC

在庫3,312

VUO52-20NO1

IXYS

RECT BRIDGE 3PH 54A 2000V V1-A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 2000V
Current - Average Rectified (Io): 54A
Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A
Current - Reverse Leakage @ Vr: 40µA @ 2000V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1-A
Supplier Device Package: V1-A

パッケージ: V1-A

在庫4,160

IXDD430YI

IXYS

IC DRVR MOSF/IGBT 30A TO263-5

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 8.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 18ns, 16ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Supplier Device Package: TO-263 (D2Pak)

パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

在庫6,800

IXRFD630

IXYS

IC MOSFET DVR RF 30A HI DCB

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 8 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 4ns, 4ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: -

パッケージ: 6-SMD, Flat Lead Exposed Pad

在庫12,816

IXBOD1-23R

IXYS

IC DIODE MODULE BOD 0.9A 2300V

Voltage - Clamping: 2300V (2.3kV)
Technology: Mixed Technology
Number of Circuits: 3
Number of Circuits: 3
Applications: High Voltage
Mounting Type: PCB, Through Hole
Package / Case: Radial
Supplier Device Package: BOD

パッケージ: Radial

在庫3,186

CLA50E1200TC-TUB

IXYS

SCR 1.2KV 80A TO268AA

Voltage - Off State: 1.2 kV
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 50 mA
Voltage - On State (Vtm) (Max): 1.6 V
Current - On State (It (AV)) (Max): 50 A
Current - On State (It (RMS)) (Max): 80 A
Current - Hold (Ih) (Max): 75 mA
Current - Off State (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 590A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA

パッケージ: -

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DMA50P1600HB

IXYS

DIODE GEN PURP 1.6KV 50A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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IXGA20N120B3-TRL

IXYS

IXGA20N120B3 TRL

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 36 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Power - Max: 180 W
Switching Energy: 920µJ (on), 560µJ (off)
Input Type: Standard
Gate Charge: 51 nC
Td (on/off) @ 25°C: 16ns/150ns
Test Condition: 600V, 16A, 15Ohm, 15V
Reverse Recovery Time (trr): 31 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)

パッケージ: -

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IXXT100N75B4HV

IXYS

IGBT DISCRETE TO-268HV

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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IXTA230N075T2-TRL

IXYS

MOSFET N-CH 75V 230A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

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N7585FE240

IXYS

SCR 2.4KV W119

Voltage - Off State: 2.4 kV
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Voltage - On State (Vtm) (Max): -
Current - On State (It (AV)) (Max): 7535 A
Current - On State (It (RMS)) (Max): -
Current - Hold (Ih) (Max): -
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 110000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Supplier Device Package: W119

パッケージ: -

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MCC600-22IO1W

IXYS

MOD SCR THYRISTOR 2200V

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 2.2 kV
Current - On State (It (AV)) (Max): 710 A
Current - On State (It (RMS)) (Max): 1116 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A, 18200A
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

パッケージ: -

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IXTH220N20X4

IXYS

MOSFET N-CH 200V 220A X4 TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISO TO-247-3
Package / Case: TO-247-3

パッケージ: -

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