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部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAS70E6433HTMA1	Infineon Technologies	DIODE SCHOTTKY 70V 70MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,328	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	100ps	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	-55°C ~ 125°C
BAT5402VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 200MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	パッケージ: SC-79, SOD-523	在庫3,264	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAT5403WE6327HTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C (Max)	パッケージ: SC-76, SOD-323	在庫3,664	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	PG-SOD323-2	150°C (Max)
BAS2103WE6433HTMA1	Infineon Technologies	DIODE GEN PURP 200V 250MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C (Max)	パッケージ: SC-76, SOD-323	在庫5,808	200V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	PG-SOD323-2	150°C (Max)
BAS1602LE6327XTMA1	Infineon Technologies	DIODE GEN PURP 80V 200MA TSLP-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: 150°C (Max)	パッケージ: SOD-882	在庫4,672	80V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	150°C (Max)
BAS116E6433HTMA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫7,888	80V	250mA (DC)	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
BAS21E6433HTMA1	Infineon Technologies	DIODE GEN PURP 200V 250MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,376	200V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
BAL99E6327HTSA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 70V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫2,192	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 70V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	-65°C ~ 150°C
BAL99E6433HTMA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 70V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫7,712	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 70V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	-65°C ~ 150°C
BAS16WH6327XTSA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150°C (Max)	パッケージ: SC-70, SOT-323	在庫6,704	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	PG-SOT323-3	150°C (Max)
BAS16WH6433XTMA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150°C (Max)	パッケージ: SC-70, SOT-323	在庫3,328	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	PG-SOT323-3	150°C (Max)
IDW40G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 40A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 40A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 220µA @ 650V Capacitance @ Vr, F: 1140pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-247-3	在庫7,424	650V	40A (DC)	1.7V @ 40A	No Recovery Time > 500mA (Io)	0ns	220µA @ 650V	1140pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDW30G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 30A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 220µA @ 650V Capacitance @ Vr, F: 860pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-247-3	在庫5,632	650V	30A (DC)	1.7V @ 30A	No Recovery Time > 500mA (Io)	0ns	220µA @ 650V	860pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDW20G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 20A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 210µA @ 650V Capacitance @ Vr, F: 590pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-247-3	在庫2,944	650V	20A (DC)	1.7V @ 20A	No Recovery Time > 500mA (Io)	0ns	210µA @ 650V	590pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDH20G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 20A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 210µA @ 650V Capacitance @ Vr, F: 590pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫5,472	650V	20A (DC)	1.7V @ 20A	No Recovery Time > 500mA (Io)	0ns	210µA @ 650V	590pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDW16G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 16A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 16A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 650V Capacitance @ Vr, F: 470pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-247-3	在庫2,704	650V	16A (DC)	1.7V @ 16A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	470pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDH16G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 16A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 16A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 650V Capacitance @ Vr, F: 470pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫7,920	650V	16A (DC)	1.7V @ 16A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	470pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDW12G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 190µA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-247-3	在庫4,048	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	190µA @ 650V	360pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDH12G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 190µA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫6,480	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	190µA @ 650V	360pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDW10G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 10A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180µA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-247-3	在庫2,704	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	180µA @ 650V	300pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDH10G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180µA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫5,664	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	180µA @ 650V	300pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDH09G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 9A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 9A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 9A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 160µA @ 650V Capacitance @ Vr, F: 270pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫3,312	650V	9A (DC)	1.7V @ 9A	No Recovery Time > 500mA (Io)	0ns	160µA @ 650V	270pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDH08G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 8A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 140µA @ 650V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫7,184	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	140µA @ 650V	250pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDH06G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 6A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 110µA @ 650V Capacitance @ Vr, F: 190pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫6,256	650V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	110µA @ 650V	190pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDH04G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 4A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70µA @ 650V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫7,888	650V	4A (DC)	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	70µA @ 650V	130pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDH03G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 3A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 100pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫2,512	650V	3A (DC)	1.7V @ 3A	No Recovery Time > 500mA (Io)	0ns	50µA @ 650V	100pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDV08E65D2XKSA1	Infineon Technologies	DIODE GEN PURP 650V 8A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -40°C ~ 175°C	パッケージ: TO-220-2	在庫6,780	650V	8A	2.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	40µA @ 650V	-	Through Hole	TO-220-2	TO-220-2	-40°C ~ 175°C
IDH05G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1.2KV 5A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 33µA @ 1200V Capacitance @ Vr, F: 301pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫7,872	1200V	5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	33µA @ 1200V	301pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDP30E120XKSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 50A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 243ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-220-2	在庫9,396	1200V	50A (DC)	2.15V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	243ns	100µA @ 1200V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 150°C
IDV30E65D2XKSA1	Infineon Technologies	DIODE GEN PURP 650V 30A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 2.2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -40°C ~ 175°C	パッケージ: TO-220-2 Full Pack	在庫17,700	650V	30A (DC)	2.2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	40µA @ 650V	-	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-40°C ~ 175°C

BAS70E6433HTMA1

Infineon Technologies

DIODE SCHOTTKY 70V 70MA SOT23-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100ps
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,328

70V

70mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

100ps

100nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

-55°C ~ 125°C

BAT5402VH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 200MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)

パッケージ: SC-79, SOD-523

在庫3,264

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

150°C (Max)

BAT5403WE6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 200MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)

パッケージ: SC-76, SOD-323

在庫3,664

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

PG-SOD323-2

150°C (Max)

BAS2103WE6433HTMA1

Infineon Technologies

DIODE GEN PURP 200V 250MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)

パッケージ: SC-76, SOD-323

在庫5,808

200V

250mA (DC)

1.25V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 200V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

PG-SOD323-2

150°C (Max)

BAS1602LE6327XTMA1

Infineon Technologies

DIODE GEN PURP 80V 200MA TSLP-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2
Operating Temperature - Junction: 150°C (Max)

パッケージ: SOD-882

在庫4,672

80V

200mA (DC)

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SOD-882

PG-TSLP-2

150°C (Max)

BAS116E6433HTMA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5nA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: 150°C (Max)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫7,888

80V

250mA (DC)

1.25V @ 150mA

Standard Recovery >500ns, > 200mA (Io)

1.5µs

5nA @ 75V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

150°C (Max)

BAS21E6433HTMA1

Infineon Technologies

DIODE GEN PURP 200V 250MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: 150°C (Max)

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,376

200V

250mA (DC)

1.25V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 200V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

150°C (Max)

BAL99E6327HTSA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 70V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫2,192

80V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

1µA @ 70V

1.5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

-65°C ~ 150°C

BAL99E6433HTMA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 70V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫7,712

80V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

1µA @ 70V

1.5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

-65°C ~ 150°C

BAS16WH6327XTSA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C (Max)

パッケージ: SC-70, SOT-323

在庫6,704

80V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

PG-SOT323-3

150°C (Max)

BAS16WH6433XTMA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C (Max)

パッケージ: SC-70, SOT-323

在庫3,328

80V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

PG-SOT323-3

150°C (Max)

IDW40G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 40A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 40A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 220µA @ 650V
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-3

在庫7,424

650V

40A (DC)

1.7V @ 40A

No Recovery Time > 500mA (Io)

0ns

220µA @ 650V

1140pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDW30G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 30A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 220µA @ 650V
Capacitance @ Vr, F: 860pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-3

在庫5,632

650V

30A (DC)

1.7V @ 30A

No Recovery Time > 500mA (Io)

0ns

220µA @ 650V

860pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDW20G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 20A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 210µA @ 650V
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-3

在庫2,944

650V

20A (DC)

1.7V @ 20A

No Recovery Time > 500mA (Io)

0ns

210µA @ 650V

590pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDH20G65C5XKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 20A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 210µA @ 650V
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫5,472

650V

20A (DC)

1.7V @ 20A

No Recovery Time > 500mA (Io)

0ns

210µA @ 650V

590pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

IDW16G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 16A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 16A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 650V
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-3

在庫2,704

650V

16A (DC)

1.7V @ 16A

No Recovery Time > 500mA (Io)

0ns

200µA @ 650V

470pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDH16G65C5XKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 16A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 16A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 650V
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫7,920

650V

16A (DC)

1.7V @ 16A

No Recovery Time > 500mA (Io)

0ns

200µA @ 650V

470pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

IDW12G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 12A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 190µA @ 650V
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-3

在庫4,048

650V

12A (DC)

1.7V @ 12A

No Recovery Time > 500mA (Io)

0ns

190µA @ 650V

360pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDH12G65C5XKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 12A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 190µA @ 650V
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫6,480

650V

12A (DC)

1.7V @ 12A

No Recovery Time > 500mA (Io)

0ns

190µA @ 650V

360pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

IDW10G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 10A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 180µA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-3

在庫2,704

650V

10A (DC)

1.7V @ 10A

No Recovery Time > 500mA (Io)

0ns

180µA @ 650V

300pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDH10G65C5XKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 180µA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫5,664

650V

10A (DC)

1.7V @ 10A

No Recovery Time > 500mA (Io)

0ns

180µA @ 650V

300pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

IDH09G65C5XKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 9A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 9A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 9A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 160µA @ 650V
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫3,312

650V

9A (DC)

1.7V @ 9A

No Recovery Time > 500mA (Io)

0ns

160µA @ 650V

270pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

IDH08G65C5XKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 8A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 140µA @ 650V
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫7,184

650V

8A (DC)

1.7V @ 8A

No Recovery Time > 500mA (Io)

0ns

140µA @ 650V

250pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

IDH06G65C5XKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 6A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 110µA @ 650V
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫6,256

650V

6A (DC)

1.7V @ 6A

No Recovery Time > 500mA (Io)

0ns

110µA @ 650V

190pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

IDH04G65C5XKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 4A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 70µA @ 650V
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫7,888

650V

4A (DC)

1.7V @ 4A

No Recovery Time > 500mA (Io)

0ns

70µA @ 650V

130pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

IDH03G65C5XKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 3A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫2,512

650V

3A (DC)

1.7V @ 3A

No Recovery Time > 500mA (Io)

0ns

50µA @ 650V

100pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

IDV08E65D2XKSA1

Infineon Technologies

DIODE GEN PURP 650V 8A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: TO-220-2

在庫6,780

650V

8A

2.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

40µA @ 650V

-

Through Hole

TO-220-2

-40°C ~ 175°C

IDH05G120C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 1.2KV 5A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 33µA @ 1200V
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫7,872

1200V

5A (DC)

1.8V @ 5A

No Recovery Time > 500mA (Io)

0ns

33µA @ 1200V

301pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

IDP30E120XKSA1

Infineon Technologies

DIODE GEN PURP 1.2KV 50A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-220-2

在庫9,396

1200V

50A (DC)

2.15V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

243ns

100µA @ 1200V

-

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 150°C

IDV30E65D2XKSA1

Infineon Technologies

DIODE GEN PURP 650V 30A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: TO-220-2 Full Pack

在庫17,700

650V

30A (DC)

2.2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

42ns

40µA @ 650V

-

Through Hole

TO-220-2 Full Pack

PG-TO220-2 Full Pack

-40°C ~ 175°C