ページ 5 - Infineon Technologies 製品 - トランジスタ - バイポーラ(BJT) - RF | Heisener Electronics
連絡先
SalesDept@heisener.com +86-755-83210559 ext. 814
Language Translation

* Please refer to the English Version as our Official Version.

Infineon Technologies 製品 - トランジスタ - バイポーラ(BJT) - RF

レコード 178
ページ  5/6
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP183WE6327BTSA1
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫5,280
12V
8GHz
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
22dB
450mW
70 @ 15mA, 8V
65mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP182WE6327HTSA1
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫3,312
12V
8GHz
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
22dB
250mW
70 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP 420F E6327
Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 19.5dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
パッケージ: 4-SMD, Flat Leads
在庫5,056
5V
25GHz
1.1dB @ 1.8GHz
19.5dB
160mW
60 @ 5mA, 4V
35mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP 405F E6327
Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 22.5dB
  • Power - Max: 55mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 12mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
パッケージ: 4-SMD, Flat Leads
在庫6,048
5V
25GHz
1.25dB @ 1.8GHz
22.5dB
55mW
60 @ 5mA, 4V
12mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP650E6327HTSA1
Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 37GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
  • Gain: 10.5dB ~ 21.5dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫3,584
4.5V
37GHz
0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
10.5dB ~ 21.5dB
500mW
110 @ 80mA, 3V
150mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP540ESDE6327HTSA1
Infineon Technologies

TRANS RF NPN 4.5V ESD SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 30GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
  • Gain: 21.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫3,264
5V
30GHz
0.9dB ~ 1.4dB @ 1.8GHz
21.5dB
250mW
50 @ 20mA, 3.5V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP540E6327BTSA1
Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 30GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
  • Gain: 21.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫3,504
5V
30GHz
0.9dB ~ 1.4dB @ 1.8GHz
21.5dB
250mW
50 @ 20mA, 3.5V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP 650F E6327
Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
  • Gain: 11dB ~ 21.5dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
パッケージ: 4-SMD, Flat Leads
在庫4,576
4.5V
42GHz
0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
11dB ~ 21.5dB
500mW
110 @ 80mA, 3V
150mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP540FESDE6327
Infineon Technologies

TRANS RF NPN 4.5V 80MA 4TSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 30GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
  • Gain: 20dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
パッケージ: 4-SMD, Flat Leads
在庫6,592
5V
30GHz
0.9dB ~ 1.4dB @ 1.8GHz
20dB
250mW
50 @ 20mA, 3.5V
80mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP620E7764BTSA1
Infineon Technologies

TRANSISTOR RF NPN 2.3V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 65GHz
  • Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
  • Gain: 21.5dB
  • Power - Max: 185mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫3,792
2.8V
65GHz
0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
21.5dB
185mW
110 @ 50mA, 1.5V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP 540F E6327
Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 30GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
  • Gain: 20dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
パッケージ: 4-SMD, Flat Leads
在庫4,464
5V
30GHz
0.9dB ~ 1.4dB @ 1.8GHz
20dB
250mW
50 @ 20mA, 3.5V
80mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP 520F E6327
Infineon Technologies

TRANSISTOR RF NPN 2.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
  • Gain: 22.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
パッケージ: 4-SMD, Flat Leads
在庫2,480
3.5V
45GHz
0.95dB @ 1.8GHz
22.5dB
100mW
70 @ 20mA, 2V
40mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFR750L3RHE6327XTSA1
Infineon Technologies

TRANS RF BIPO NPN 90MA TSLP-3-9

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 37GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
  • Gain: 21dB
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
パッケージ: SC-101, SOT-883
在庫6,512
4.7V
37GHz
0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
21dB
360mW
160 @ 60mA, 3V
90mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BFR 705L3RH E6327
Infineon Technologies

TRANS RF BIPO NPN 10MA TSLP-3-9

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 39GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 25dB
  • Power - Max: 40mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
パッケージ: SC-101, SOT-883
在庫6,400
4.7V
39GHz
0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
25dB
40mW
160 @ 7mA, 3V
10mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BFP 740F E6327
Infineon Technologies

TRANSISTOR RF NPN 30MA TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
  • Gain: 27.5dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
パッケージ: 4-SMD, Flat Leads
在庫3,488
4.7V
42GHz
0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
27.5dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP740E6327HTSA1
Infineon Technologies

TRANSISTOR RF NPN 30MA SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
  • Gain: 27dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫4,096
4.7V
42GHz
0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
27dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BGB 540 E6327
Infineon Technologies

TRANSISTOR RF ACT BIAS SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 16dB ~ 17.5dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
パッケージ: SC-82A, SOT-343
在庫5,920
3.5V
-
1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
16dB ~ 17.5dB
120mW
-
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFS 483 E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain: 19dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
パッケージ: 6-VSSOP, SC-88, SOT-363
在庫3,728
12V
8GHz
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
19dB
450mW
70 @ 15mA, 8V
65mA
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BFS 481 E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain: 20dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
パッケージ: 6-VSSOP, SC-88, SOT-363
在庫3,056
12V
8GHz
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
20dB
175mW
70 @ 5mA, 8V
20mA
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BFS 469L6 E6327
Infineon Technologies

TRANSISTOR RF TWIN NPN TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5V, 10V
  • Frequency - Transition: 22GHz, 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
  • Gain: 14.5dB
  • Power - Max: 200mW, 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 50mA, 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
パッケージ: 6-XFDFN
在庫5,632
5V, 10V
22GHz, 9GHz
1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
14.5dB
200mW, 250mW
130 @ 20mA, 3V / 100 @ 5mA, 3V
50mA, 70mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
BFS 466L6 E6327
Infineon Technologies

TRANSISTOR RF TWIN NPN TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5V, 9V
  • Frequency - Transition: 22GHz, 14GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
  • Gain: 12dB ~ 17dB
  • Power - Max: 200mW, 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 50mA, 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
パッケージ: 6-XFDFN
在庫6,800
5V, 9V
22GHz, 14GHz
1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
12dB ~ 17dB
200mW, 210mW
90 @ 20mA, 3V / 90 @ 15mA, 3V
50mA, 35mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
BFS 460L6 E6327
Infineon Technologies

TRANSISTOR RF TWIN NPN TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5.8V
  • Frequency - Transition: 22GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
パッケージ: 6-XFDFN
在庫2,784
5.8V
22GHz
1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
10dB ~ 14.5dB
200mW
90 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
BFS 386L6 E6327
Infineon Technologies

TRANSISTOR ARRAY DUAL NPN TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 210mW, 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V / 60 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 35mA, 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
パッケージ: 6-XFDFN
在庫3,232
6V
14GHz
1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
10dB ~ 14.5dB
210mW, 380mW
60 @ 15mA, 3V / 60 @ 40mA, 3V
35mA, 80mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
BFS 380L6 E6327
Infineon Technologies

TRANSISTOR GP BJT NPN 6V TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
  • Gain: 8dB ~ 12dB
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
パッケージ: 6-XFDFN
在庫4,528
9V
14GHz
1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
8dB ~ 12dB
380mW
60 @ 40mA, 3V
80mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
BFS 360L6 E6327
Infineon Technologies

TRANSISTOR NPN 6V 35MA TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
パッケージ: 6-XFDFN
在庫6,640
9V
14GHz
1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
10dB ~ 14.5dB
210mW
60 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
BFS17WE6327HTSA1
Infineon Technologies

TRANSISTOR NPN RF 15V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
パッケージ: SC-70, SOT-323
在庫7,856
15V
1.4GHz
3.5dB ~ 5dB @ 800MHz
-
280mW
40 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BFS 17P E6433
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫7,552
15V
1.4GHz
3.5dB ~ 5dB @ 800MHz
-
280mW
40 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFR 949T E6327
Infineon Technologies

TRANSISTOR RF BIP SC-75

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
  • Gain: 20dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
パッケージ: SC-75, SOT-416
在庫7,104
10V
9GHz
1dB ~ 2.5dB @ 1GHz
20dB
250mW
100 @ 5mA, 6V
35mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
PG-SC-75
BFR 949L3 E6327
Infineon Technologies

TRANSISTOR RF NPN 10V TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
  • Gain: 21.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
パッケージ: SC-101, SOT-883
在庫4,784
10V
9GHz
1dB ~ 2.5dB @ 1GHz
21.5dB
250mW
100 @ 5mA, 6V
50mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BFR 93AW E6327
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 15.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
パッケージ: SC-70, SOT-323
在庫6,336
12V
6GHz
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
10.5dB ~ 15.5dB
300mW
70 @ 30mA, 8V
90mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3