ページ 300 - Infineon Technologies 製品 - トランジスタ - FET、MOSFET - シングル

部品番号	メーカ	説明	パッケージ	在庫	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSP296NL6327HTSA1	Infineon Technologies	MOSFET N-CH 100V 1.2A PG-SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	パッケージ: TO-261-4, TO-261AA	在庫4,768	MOSFET (Metal Oxide)	100V	1.2A (Ta)	4.5V, 10V	1.8V @ 100µA	6.7nC @ 10V	152.7pF @ 25V	±20V	-	1.8W (Ta)	600 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
SIPC26N60CFDX1SA1	Infineon Technologies	MOSFET COOL MOS 600V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫3,280	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPS090N03LGBKMA1	Infineon Technologies	MOSFET N-CHANNEL 30V 40A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	パッケージ: TO-251-3 Stub Leads, IPak	在庫6,080	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.2V @ 250µA	15nC @ 10V	1600pF @ 15V	±20V	-	42W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IPS075N03LGBKMA1	Infineon Technologies	MOSFET N-CHANNEL 30V 50A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	パッケージ: TO-251-3 Stub Leads, IPak	在庫2,144	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	18nC @ 10V	1900pF @ 15V	-	-	47W (Tc)	7.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IPS060N03LGBKMA1	Infineon Technologies	MOSFET N-CHANNEL 30V 50A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	パッケージ: TO-251-3 Stub Leads, IPak	在庫7,248	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	23nC @ 10V	2400pF @ 15V	-	-	56W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IPS050N03LGBKMA1	Infineon Technologies	MOSFET N-CHANNEL 30V 50A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	パッケージ: TO-251-3 Stub Leads, IPak	在庫6,336	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	3200pF @ 15V	-	-	68W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IRFH7194TRPBF	Infineon Technologies	MOSFET N-CH 100V 11A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	パッケージ: 8-PowerTDFN	在庫2,944	MOSFET (Metal Oxide)	100V	11A (Ta), 35A (Tc)	10V	3.6V @ 50µA	19nC @ 10V	733pF @ 50V	±20V	-	3.6W (Ta), 39W (Tc)	16.4 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IRFH7190ATRPBF	Infineon Technologies	MOSFET N-CH 8-TDSON FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫2,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFH7184ATRPBF	Infineon Technologies	MOSFET N-CH 8-TDSON FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫6,320	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-