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IGC99T120T8RLX1SA3

Infineon Technologies

IGBT 1200V 100A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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1200 V

-

300 A

1.97V @ 15V, 100A

-

Standard

-

Surface Mount

Die

SIGC12T60NCX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): 30 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

10 A

30 A

2.5V @ 15V, 10A

-

Standard

-

21ns/110ns

300V, 10A, 27Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC12T60NCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): 30 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

10 A

30 A

2.5V @ 15V, 10A

-

Standard

-

21ns/110ns

300V, 10A, 27Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IKQ100N120CH7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 166A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 166 A
Current - Collector Pulsed (Icm): 400 A
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
Power - Max: 721 W
Switching Energy: 6.7mJ (on), 2.52mJ (off)
Input Type: Standard
Gate Charge: 696 nC
Td (on/off) @ 25°C: 66ns/547ns
Test Condition: -
Reverse Recovery Time (trr): 148 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-U01

パッケージ: -

在庫600

1200 V

166 A

400 A

2.15V @ 15V, 100A

721 W

6.7mJ (on), 2.52mJ (off)

Standard

696 nC

66ns/547ns

-

148 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-U01

SIGC12T60SNCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): 30 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

10 A

30 A

2.5V @ 15V, 10A

-

Standard

-

29ns/266ns

400V, 10A, 25Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC12T60SNCX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): 30 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

10 A

30 A

2.5V @ 15V, 10A

-

Standard

-

29ns/266ns

400V, 10A, 25Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

AIKB40N65DF5ATMA1

Infineon Technologies

IGBT NPT 650V 40A TO263-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2

パッケージ: -

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650 V

40 A

-

Standard

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-3-2

IGW60T120FKSA1

Infineon Technologies

IGBT TRENCH 1200V 100A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Power - Max: 375 W
Switching Energy: 9.5mJ
Input Type: Standard
Gate Charge: 280 nC
Td (on/off) @ 25°C: 50ns/480ns
Test Condition: 600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1

パッケージ: -

在庫24

1200 V

100 A

150 A

2.4V @ 15V, 60A

375 W

9.5mJ

Standard

280 nC

50ns/480ns

600V, 60A, 10Ohm, 15V

-

-40°C ~ 150°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-1

IKQ120N120CS7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 216A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 216 A
Current - Collector Pulsed (Icm): 360 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Power - Max: 1004 W
Switching Energy: 10.3mJ (on), 5.72mJ (off)
Input Type: Standard
Gate Charge: 710 nC
Td (on/off) @ 25°C: 44ns/205ns
Test Condition: -
Reverse Recovery Time (trr): 205 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-46

パッケージ: -

在庫564

1200 V

216 A

360 A

2V @ 15V, 120A

1004 W

10.3mJ (on), 5.72mJ (off)

Standard

710 nC

44ns/205ns

-

205 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-46

IHW30N140R5LXKSA1

Infineon Technologies

IGBT 1400V 80A TO247-44

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
Power - Max: 306 W
Switching Energy: -, 140µJ (off)
Input Type: Standard
Gate Charge: 210 nC
Td (on/off) @ 25°C: -/175ns
Test Condition: 25V, 30A, 2.2Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-44

パッケージ: -

在庫669

1400 V

80 A

90 A

1.95V @ 15V, 30A

306 W

-, 140µJ (off)

Standard

210 nC

-/175ns

25V, 30A, 2.2Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-44

SIGC81T60SNCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 65ns/450ns
Test Condition: 400V, 100A, 3.3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

100 A

300 A

2.5V @ 15V, 100A

-

Standard

-

65ns/450ns

400V, 100A, 3.3Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IRGC50B120UB

Infineon Technologies

IGBT CHIP

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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1200 V

50 A

-

3.5V @ 15V, 50A

-

Standard

-

Surface Mount

Die

IGC54T65R3QEX1SA1

Infineon Technologies

IGBT CHIP

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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650 V

100 A

300 A

2.22V @ 15V, 100A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

IKD06N60RC2ATMA1

Infineon Technologies

IGBT TRENCH FS 600V 11.7A TO252

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11.7 A
Current - Collector Pulsed (Icm): 18 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Power - Max: 51.7 W
Switching Energy: 170µJ (on), 80µJ (off)
Input Type: Standard
Gate Charge: 31 nC
Td (on/off) @ 25°C: 6ns/129ns
Test Condition: 400V, 6A, 49Ohm, 15V
Reverse Recovery Time (trr): 98 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

パッケージ: -

在庫13,752

600 V

11.7 A

18 A

2.3V @ 15V, 6A

51.7 W

170µJ (on), 80µJ (off)

Standard

31 nC

6ns/129ns

400V, 6A, 49Ohm, 15V

98 ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

PG-TO252-3

SIGC14T60SNCX1SA6

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 31ns/261ns
Test Condition: 400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

31ns/261ns

400V, 15A, 21Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60SNCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 31ns/261ns
Test Condition: 400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

31ns/261ns

400V, 15A, 21Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60SNCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 31ns/261ns
Test Condition: 400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

31ns/261ns

400V, 15A, 21Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60SNCX1SA4

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 31ns/261ns
Test Condition: 400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

31ns/261ns

400V, 15A, 21Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60SNCX1SA5

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 31ns/261ns
Test Condition: 400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

31ns/261ns

400V, 15A, 21Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IRGC15B60KD

Infineon Technologies

IGBT CHIP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 130 ns
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

15 A

-

Standard

-

130 ns

-55°C ~ 150°C

Surface Mount

Die

IRGC15B60KB

Infineon Technologies

IGBT CHIP

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 3A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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600 V

15 A

-

1.35V @ 15V, 3A

-

Standard

-

Surface Mount

Die

IQFH86N06NM5ATMA1

Infineon Technologies

TRENCH 40<-<100V

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

AUXMIGP4063D

Infineon Technologies

IGBT 600V TO-247 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

IKWH30N65WR6XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 67A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 67 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Power - Max: 136 W
Switching Energy: -
Input Type: Standard
Gate Charge: 97 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-32

パッケージ: -

在庫600

650 V

67 A

90 A

1.75V @ 15V, 30A

136 W

-

Standard

97 nC

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-32

DF400R07W2S5FB77BPSA1

Infineon Technologies

LOW POWER EASY

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

AIMBG75R140M1HXTMA1

Infineon Technologies

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,000

-

AIGB30N65H5ATMA1

Infineon Technologies

DISCRETE SWITCHES

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2

パッケージ: -

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650 V

30 A

-

Standard

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-3-2

IRGC75B120UB

Infineon Technologies

IGBT CHIP

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

Request a Quote

1200 V

75 A

-

3.5V @ 15V, 75A

-

Standard

-

Surface Mount

Die

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IGC99T120T8RLX1SA3	Infineon Technologies	IGBT 1200V 100A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	1200 V	-	300 A	1.97V @ 15V, 100A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
SIGC12T60NCX7SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 10A, 27Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	10 A	30 A	2.5V @ 15V, 10A	-	-	Standard	-	21ns/110ns	300V, 10A, 27Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC12T60NCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 10A, 27Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	10 A	30 A	2.5V @ 15V, 10A	-	-	Standard	-	21ns/110ns	300V, 10A, 27Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IKQ100N120CH7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 166A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 166 A Current - Collector Pulsed (Icm): 400 A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A Power - Max: 721 W Switching Energy: 6.7mJ (on), 2.52mJ (off) Input Type: Standard Gate Charge: 696 nC Td (on/off) @ 25°C: 66ns/547ns Test Condition: - Reverse Recovery Time (trr): 148 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-U01	パッケージ: -	在庫600	1200 V	166 A	400 A	2.15V @ 15V, 100A	721 W	6.7mJ (on), 2.52mJ (off)	Standard	696 nC	66ns/547ns	-	148 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-U01
SIGC12T60SNCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 29ns/266ns Test Condition: 400V, 10A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	10 A	30 A	2.5V @ 15V, 10A	-	-	Standard	-	29ns/266ns	400V, 10A, 25Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC12T60SNCX7SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 29ns/266ns Test Condition: 400V, 10A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	10 A	30 A	2.5V @ 15V, 10A	-	-	Standard	-	29ns/266ns	400V, 10A, 25Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
AIKB40N65DF5ATMA1	Infineon Technologies	IGBT NPT 650V 40A TO263-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	パッケージ: -	Request a Quote	650 V	40 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3-2
IGW60T120FKSA1	Infineon Technologies	IGBT TRENCH 1200V 100A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Power - Max: 375 W Switching Energy: 9.5mJ Input Type: Standard Gate Charge: 280 nC Td (on/off) @ 25°C: 50ns/480ns Test Condition: 600V, 60A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	パッケージ: -	在庫24	1200 V	100 A	150 A	2.4V @ 15V, 60A	375 W	9.5mJ	Standard	280 nC	50ns/480ns	600V, 60A, 10Ohm, 15V	-	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
IKQ120N120CS7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 216A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 216 A Current - Collector Pulsed (Icm): 360 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A Power - Max: 1004 W Switching Energy: 10.3mJ (on), 5.72mJ (off) Input Type: Standard Gate Charge: 710 nC Td (on/off) @ 25°C: 44ns/205ns Test Condition: - Reverse Recovery Time (trr): 205 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	パッケージ: -	在庫564	1200 V	216 A	360 A	2V @ 15V, 120A	1004 W	10.3mJ (on), 5.72mJ (off)	Standard	710 nC	44ns/205ns	-	205 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-46
IHW30N140R5LXKSA1	Infineon Technologies	IGBT 1400V 80A TO247-44 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A Power - Max: 306 W Switching Energy: -, 140µJ (off) Input Type: Standard Gate Charge: 210 nC Td (on/off) @ 25°C: -/175ns Test Condition: 25V, 30A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-44	パッケージ: -	在庫669	1400 V	80 A	90 A	1.95V @ 15V, 30A	306 W	-, 140µJ (off)	Standard	210 nC	-/175ns	25V, 30A, 2.2Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-44
SIGC81T60SNCX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 65ns/450ns Test Condition: 400V, 100A, 3.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	100 A	300 A	2.5V @ 15V, 100A	-	-	Standard	-	65ns/450ns	400V, 100A, 3.3Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRGC50B120UB	Infineon Technologies	IGBT CHIP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	1200 V	50 A	-	3.5V @ 15V, 50A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
IGC54T65R3QEX1SA1	Infineon Technologies	IGBT CHIP IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	650 V	100 A	300 A	2.22V @ 15V, 100A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IKD06N60RC2ATMA1	Infineon Technologies	IGBT TRENCH FS 600V 11.7A TO252 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 11.7 A Current - Collector Pulsed (Icm): 18 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A Power - Max: 51.7 W Switching Energy: 170µJ (on), 80µJ (off) Input Type: Standard Gate Charge: 31 nC Td (on/off) @ 25°C: 6ns/129ns Test Condition: 400V, 6A, 49Ohm, 15V Reverse Recovery Time (trr): 98 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	パッケージ: -	在庫13,752	600 V	11.7 A	18 A	2.3V @ 15V, 6A	51.7 W	170µJ (on), 80µJ (off)	Standard	31 nC	6ns/129ns	400V, 6A, 49Ohm, 15V	98 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PG-TO252-3
SIGC14T60SNCX1SA6	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 31ns/261ns Test Condition: 400V, 15A, 21Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	31ns/261ns	400V, 15A, 21Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60SNCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 31ns/261ns Test Condition: 400V, 15A, 21Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	31ns/261ns	400V, 15A, 21Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60SNCX1SA3	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 31ns/261ns Test Condition: 400V, 15A, 21Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	31ns/261ns	400V, 15A, 21Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60SNCX1SA4	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 31ns/261ns Test Condition: 400V, 15A, 21Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	31ns/261ns	400V, 15A, 21Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60SNCX1SA5	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 31ns/261ns Test Condition: 400V, 15A, 21Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	31ns/261ns	400V, 15A, 21Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRGC15B60KD	Infineon Technologies	IGBT CHIP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 130 ns Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	15 A	-	-	-	-	Standard	-	-	-	130 ns	-55°C ~ 150°C	Surface Mount	Die	Die
IRGC15B60KB	Infineon Technologies	IGBT CHIP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 3A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	600 V	15 A	-	1.35V @ 15V, 3A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
IQFH86N06NM5ATMA1	Infineon Technologies	TRENCH 40<-<100V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUXMIGP4063D	Infineon Technologies	IGBT 600V TO-247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IKWH30N65WR6XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 67A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 67 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A Power - Max: 136 W Switching Energy: - Input Type: Standard Gate Charge: 97 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	パッケージ: -	在庫600	650 V	67 A	90 A	1.75V @ 15V, 30A	136 W	-	Standard	97 nC	-	-	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
DF400R07W2S5FB77BPSA1	Infineon Technologies	LOW POWER EASY IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMBG75R140M1HXTMA1	Infineon Technologies	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIGB30N65H5ATMA1	Infineon Technologies	DISCRETE SWITCHES IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	パッケージ: -	Request a Quote	650 V	30 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3-2
IRGC75B120UB	Infineon Technologies	IGBT CHIP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	1200 V	75 A	-	3.5V @ 15V, 75A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die