ページ 28 - Infineon Technologies 製品 - トランジスタ - IGBT - シングル | Heisener Electronics
連絡先
SalesDept@heisener.com +86-755-83210559 ext. 803
ログイン/登録
Language Translation

* Please refer to the English Version as our Official Version.

BOM
カート 0

Infineon Technologies 製品 - トランジスタ - IGBT - シングル

レコード 1,429
ページ  28/48
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SGP15N120XKSA1
Infineon Technologies

IGBT 1200V 30A 198W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
  • Power - Max: 198W
  • Switching Energy: 1.9mJ
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 18ns/580ns
  • Test Condition: 800V, 15A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
パッケージ: TO-220-3
在庫7,040
1200V
30A
52A
3.6V @ 15V, 15A
198W
1.9mJ
Standard
130nC
18ns/580ns
800V, 15A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IGZ50N65H5XKSA1
Infineon Technologies

IGBT 650V 50A SGL TO-247-4

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 273W
  • Switching Energy: 410µJ (on), 190µJ (off)
  • Input Type: Standard
  • Gate Charge: 109nC
  • Td (on/off) @ 25°C: 20ns/250ns
  • Test Condition: 400V, 25A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4
パッケージ: TO-247-4
在庫3,520
650V
85A
200A
2.1V @ 15V, 50A
273W
410µJ (on), 190µJ (off)
Standard
109nC
20ns/250ns
400V, 25A, 12 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4
IGP50N60TXKSA1
Infineon Technologies

IGBT 600V 100A 333W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
パッケージ: TO-220-3
在庫7,776
600V
100A
150A
2V @ 15V, 50A
333W
2.6mJ
Standard
310nC
26ns/299ns
400V, 50A, 7 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IRG4BC20UDSTRRP
Infineon Technologies

IGBT 600V 13A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 160µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 39ns/93ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫5,728
600V
13A
52A
2.1V @ 15V, 6.5A
60W
160µJ (on), 130µJ (off)
Standard
27nC
39ns/93ns
480V, 6.5A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRGS30B60KPBF
Infineon Technologies

IGBT 600V 78A 370W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 370W
  • Switching Energy: 350µJ (on), 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 46ns/185ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫5,072
600V
78A
120A
2.35V @ 15V, 30A
370W
350µJ (on), 825µJ (off)
Standard
102nC
46ns/185ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
SGB15N120ATMA1
Infineon Technologies

IGBT 1200V 30A 198W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
  • Power - Max: 198W
  • Switching Energy: 1.9mJ
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 18ns/580ns
  • Test Condition: 800V, 15A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,520
1200V
30A
52A
3.6V @ 15V, 15A
198W
1.9mJ
Standard
130nC
18ns/580ns
800V, 15A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IGW30N60H3FKSA1
Infineon Technologies

IGBT 600V 60A 187W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 187W
  • Switching Energy: 1.38mJ
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 21ns/207ns
  • Test Condition: 400V, 30A, 10.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫5,968
600V
60A
120A
2.4V @ 15V, 30A
187W
1.38mJ
Standard
165nC
21ns/207ns
400V, 30A, 10.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRGR4610DTRPBF
Infineon Technologies

IGBT 600V 16A 77W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫7,536
600V
16A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
13nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRGC4062B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫2,480
600V
24A
-
-
-
-
Standard
-
-
-
-
175°C (TJ)
Surface Mount
Die
Die
hot IRGSL15B60KDPBF
Infineon Technologies

IGBT 600V 31A 208W TO262

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 208W
  • Switching Energy: 220µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 34ns/184ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 92ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: PG-TO262-3
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA
在庫16,524
600V
31A
62A
2.2V @ 15V, 15A
208W
220µJ (on), 340µJ (off)
Standard
56nC
34ns/184ns
400V, 15A, 22 Ohm, 15V
92ns
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
PG-TO262-3
hot IRGSL10B60KDPBF
Infineon Technologies

IGBT 600V 22A 156W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
  • Power - Max: 156W
  • Switching Energy: 140µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 30ns/230ns
  • Test Condition: 400V, 10A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA
在庫17,196
600V
22A
44A
2.2V @ 15V, 10A
156W
140µJ (on), 250µJ (off)
Standard
38nC
30ns/230ns
400V, 10A, 47 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
AUIRG4BC30U-S
Infineon Technologies

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 360µJ
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 17ns/78ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫5,952
600V
23A
92A
2.1V @ 15V, 12A
100W
360µJ
Standard
50nC
17ns/78ns
480V, 12A, 23 Ohm, 15V
-
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRG4PC30KPBF
Infineon Technologies

IGBT 600V 28A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 58A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 360µJ (on), 510µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 26ns/130ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫18,000
600V
28A
58A
2.7V @ 15V, 16A
100W
360µJ (on), 510µJ (off)
Standard
67nC
26ns/130ns
480V, 16A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IHW15N120R3
Infineon Technologies

IGBT 1200V 30A 254W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
  • Power - Max: 254W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: -/300ns
  • Test Condition: 600V, 15A, 14.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫125,964
1200V
30A
45A
1.7V @ 15V, 15A
254W
700µJ (off)
Standard
165nC
-/300ns
600V, 15A, 14.6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRG4PH40KPBF
Infineon Technologies

IGBT 1200V 30A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
  • Power - Max: 160W
  • Switching Energy: 730µJ (on), 1.66mJ (off)
  • Input Type: Standard
  • Gate Charge: 94nC
  • Td (on/off) @ 25°C: 30ns/200ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫5,664
1200V
30A
60A
3.4V @ 15V, 15A
160W
730µJ (on), 1.66mJ (off)
Standard
94nC
30ns/200ns
960V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC40W-STRRP
Infineon Technologies

IGBT 600V 40A 160W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 110µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 27ns/100ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫5,776
600V
40A
160A
2.5V @ 15V, 20A
160W
110µJ (on), 230µJ (off)
Standard
98nC
27ns/100ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IGW03N120H2FKSA1
Infineon Technologies

IGBT 1200V 9.6A 62.5W TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 9.6A
  • Current - Collector Pulsed (Icm): 9.9A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 62.5W
  • Switching Energy: 290µJ
  • Input Type: Standard
  • Gate Charge: 22nC
  • Td (on/off) @ 25°C: 9.2ns/281ns
  • Test Condition: 800V, 3A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫6,752
1200V
9.6A
9.9A
2.8V @ 15V, 3A
62.5W
290µJ
Standard
22nC
9.2ns/281ns
800V, 3A, 82 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRG4BC30FDSTRRP
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 630µJ (on), 1.39mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 42ns/230ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,072
600V
31A
120A
1.8V @ 15V, 17A
100W
630µJ (on), 1.39mJ (off)
Standard
51nC
42ns/230ns
480V, 17A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4PC30SPBF
Infineon Technologies

IGBT 600V 34A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫3,968
600V
34A
68A
1.6V @ 15V, 18A
100W
260µJ (on), 3.45mJ (off)
Standard
50nC
22ns/540ns
480V, 18A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4PC30FPBF
Infineon Technologies

IGBT 600V 31A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 230µJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫23,400
600V
31A
120A
1.8V @ 15V, 17A
100W
230µJ (on), 1.18mJ (off)
Standard
51nC
21ns/200ns
480V, 17A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
AUIRG4BC30USTRL
Infineon Technologies

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 17ns/78ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫5,856
600V
23A
92A
2.1V @ 15V, 12A
100W
160µJ (on), 200µJ (off)
Standard
50nC
17ns/78ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
AUIRG4BC30SSTRL
Infineon Technologies

IGBT 600V 34A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫7,440
600V
34A
68A
1.6V @ 15V, 18A
100W
260µJ (on), 3.45mJ (off)
Standard
50nC
22ns/540ns
480V, 18A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGC4660B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫2,848
600V
48A
-
-
-
-
Standard
-
-
-
45ns
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGC4263B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫2,976
650V
48A
-
-
-
-
Standard
-
-
-
60ns
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGS15B60KPBF
Infineon Technologies

IGBT 600V 31A 208W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 208W
  • Switching Energy: 220µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 34ns/184ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,888
600V
31A
62A
2.2V @ 15V, 15A
208W
220µJ (on), 340µJ (off)
Standard
56nC
34ns/184ns
400V, 15A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4BC30KDSTRRP
Infineon Technologies

IGBT 600V 28A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫6,432
600V
28A
56A
2.7V @ 15V, 16A
100W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG7CH37K10EF
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 28ns/122ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫3,072
1200V
15A
-
2.3V @ 15V, 15A
-
-
Standard
80nC
28ns/122ns
600V, 15A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKP20N60TAHKSA1
Infineon Technologies

IGBT 600V 40A 166W TO220-3-1

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
  • Power - Max: 166W
  • Switching Energy: 770µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 18ns/199ns
  • Test Condition: 400V, 20A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 41ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3-1
パッケージ: TO-220-3
在庫4,656
600V
40A
60A
2.05V @ 15V, 20A
166W
770µJ
Standard
120nC
18ns/199ns
400V, 20A, 12 Ohm, 15V
41ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3-1
SGP07N120XKSA1
Infineon Technologies

IGBT 1200V 16.5A 125W TO220

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 16.5A
  • Current - Collector Pulsed (Icm): 27A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
  • Power - Max: 125W
  • Switching Energy: 1mJ
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 27ns/440ns
  • Test Condition: 800V, 8A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
パッケージ: TO-220-3
在庫6,912
1200V
16.5A
27A
3.6V @ 15V, 8A
125W
1mJ
Standard
70nC
27ns/440ns
800V, 8A, 47 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot IRGB10B60KDPBF
Infineon Technologies

IGBT 600V 22A 156W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
  • Power - Max: 156W
  • Switching Energy: 140µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 30ns/230ns
  • Test Condition: 400V, 10A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫103,464
600V
22A
44A
2.2V @ 15V, 10A
156W
140µJ (on), 250µJ (off)
Standard
38nC
30ns/230ns
400V, 10A, 47 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB