Infineon Technologies 製品 | Heisener Electronics

部品番号	メーカ	説明	パッケージ	在庫
BCV 61A E6327	Infineon Technologies	TRANSISTOR NPN DBL 30V SOT143-4 Transistor Type: 2 NPN, Base Collector Junction Applications: Current Mirror Voltage - Rated: 30V Current Rating: 100mA Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	パッケージ: TO-253-4, TO-253AA	在庫6,800
BCV61BE6433HTMA1	Infineon Technologies	TRANSISTOR NPN DOUBLE 45V SOT143 Transistor Type: 2 NPN, Base Collector Junction Applications: Current Mirror Voltage - Rated: 30V Current Rating: 100mA Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143-4	パッケージ: TO-253-4, TO-253AA	在庫3,888
BCV61BE6327HTSA1	Infineon Technologies	TRANSISTOR NPN DOUBLE SOT-143 Transistor Type: 2 NPN, Base Collector Junction Applications: Current Mirror Voltage - Rated: 30V Current Rating: 100mA Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143-4	パッケージ: TO-253-4, TO-253AA	在庫4,192
BCV61CE6327HTSA1	Infineon Technologies	TRANSISTOR NPN DOUBLE SOT-143 Transistor Type: 2 NPN, Base Collector Junction Applications: Current Mirror Voltage - Rated: 30V Current Rating: 100mA Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	パッケージ: TO-253-4, TO-253AA	在庫29,220
IJW120R100T1FKSA1	Infineon Technologies	JFET N-CHAN 26A TO247-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 1200V Current - Drain (Idss) @ Vds (Vgs=0): 1.5µA @ 1200V Current Drain (Id) - Max: 26A Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS) Resistance - RDS(On): 100 mOhm Power - Max: 190W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	パッケージ: TO-247-3	在庫3,424
IJW120R070T1FKSA1	Infineon Technologies	JFET N-CHAN 35A TO247-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 1200V Current - Drain (Idss) @ Vds (Vgs=0): 3.3µA @ 1200V Current Drain (Id) - Max: 35A Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS) Resistance - RDS(On): 70 mOhm Power - Max: 238W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	パッケージ: TO-247-3	在庫6,912
IRGP4263D1-EPBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 192A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A Power - Max: 325W Switching Energy: 2.9mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	パッケージ: TO-247-3	在庫7,456
IRGB4710DPBF	Infineon Technologies	IGBT 600V TO220 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,904
IRGP4269DPBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,488
IRGP4263D1PBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 192A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A Power - Max: 325W Switching Energy: 2.9mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	パッケージ: TO-247-3	在庫5,456
IRGP4269D-EPBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,200
IRGPS47160DPBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	パッケージ: TO-247-3	在庫6,688
IRGIB4615DPBF	Infineon Technologies	IGBT 600V FULLPAK220 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: 145µJ (on), 70µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	パッケージ: TO-220-3 Full Pack	在庫5,840
IRGIB4610DPBF	Infineon Technologies	IGBT 600V FULLPAK220 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: 122µJ (on), 56µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	パッケージ: TO-220-3 Full Pack	在庫5,456
IRGIB4607DPBF	Infineon Technologies	IGBT 600V FULLPAK220 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 7A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: 62µJ (on), 140µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	パッケージ: TO-220-3 Full Pack	在庫6,880
IRGH4607DPBF	Infineon Technologies	IGBT 600V 8PQFN IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,144
IRGH4610DPBF	Infineon Technologies	IGBT 600V 8PQFN IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,040
IRGIB4640DPBF	Infineon Technologies	IGBT 600V 65A 250W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Power - Max: 250W Switching Energy: 115µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 41ns/104ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 8-PowerTDFN Supplier Device Package: PG-TO-220-3	パッケージ: 8-PowerTDFN	在庫4,688
IRGIB4630DPBF	Infineon Technologies	IGBT 600V 47A 206W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 47A Current - Collector Pulsed (Icm): 54A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Power - Max: 206W Switching Energy: 95µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 40ns/105ns Test Condition: 400V, 18A, 22 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack	パッケージ: TO-220-3 Full Pack	在庫6,672
IRGIB4620DPBF	Infineon Technologies	IGBT 600V 32A 140W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Power - Max: 140W Switching Energy: 185µJ (on), 355µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 31ns/83ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack	パッケージ: TO-220-3 Full Pack	在庫5,344
IRG8P75N65UD1PBF	Infineon Technologies	G8 650V 75A CO-PAK-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,496
IRG8P75N65UD1-EPBF	Infineon Technologies	G8 650V 75A CO-PAK-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,408
IRG8P45N65UD1PBF	Infineon Technologies	G8 650V 45A CO-PAK-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,352
IRG8P45N65UD1-EPBF	Infineon Technologies	G8 650V 45A CO-PAK-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,120
IRG8CH42K10F	Infineon Technologies	IGBT 1200V 40A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 40ns/240ns Test Condition: 600V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫3,536
IRG8CH42K10D	Infineon Technologies	IGBT 1200V 40A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,128
IRG8CH29K10F	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫4,960
IRG8CH29K10D	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,976
IRG8CH20K10F	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 20ns/170ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫4,304
IRG8CH20K10D	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,896

BCV 61A E6327

Infineon Technologies

TRANSISTOR NPN DBL 30V SOT143-4

Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Voltage - Rated: 30V
Current Rating: 100mA
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

パッケージ: TO-253-4, TO-253AA

在庫6,800

BCV61BE6433HTMA1

Infineon Technologies

TRANSISTOR NPN DOUBLE 45V SOT143

Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Voltage - Rated: 30V
Current Rating: 100mA
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143-4

パッケージ: TO-253-4, TO-253AA

在庫3,888

BCV61BE6327HTSA1

Infineon Technologies

TRANSISTOR NPN DOUBLE SOT-143

Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Voltage - Rated: 30V
Current Rating: 100mA
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143-4

パッケージ: TO-253-4, TO-253AA

在庫4,192

BCV61CE6327HTSA1

Infineon Technologies

TRANSISTOR NPN DOUBLE SOT-143

Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Voltage - Rated: 30V
Current Rating: 100mA
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

パッケージ: TO-253-4, TO-253AA

在庫29,220

IJW120R100T1FKSA1

Infineon Technologies

JFET N-CHAN 26A TO247-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 1200V
Current - Drain (Idss) @ Vds (Vgs=0): 1.5µA @ 1200V
Current Drain (Id) - Max: 26A
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
Resistance - RDS(On): 100 mOhm
Power - Max: 190W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

パッケージ: TO-247-3

在庫3,424

IJW120R070T1FKSA1

Infineon Technologies

JFET N-CHAN 35A TO247-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 1200V
Current - Drain (Idss) @ Vds (Vgs=0): 3.3µA @ 1200V
Current Drain (Id) - Max: 35A
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
Resistance - RDS(On): 70 mOhm
Power - Max: 238W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

パッケージ: TO-247-3

在庫6,912

IRGP4263D1-EPBF

Infineon Technologies

IGBT 600V TO247 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 192A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Power - Max: 325W
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 48A, 10 Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

パッケージ: TO-247-3

在庫7,456

IRGB4710DPBF

Infineon Technologies

IGBT 600V TO220 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,904

IRGP4269DPBF

Infineon Technologies

IGBT 600V TO247 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,488

IRGP4263D1PBF

Infineon Technologies

IGBT 600V TO247 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 192A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Power - Max: 325W
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 48A, 10 Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

パッケージ: TO-247-3

在庫5,456

IRGP4269D-EPBF

Infineon Technologies

IGBT 600V TO247 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,200

IRGPS47160DPBF

Infineon Technologies

IGBT 600V TO247 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

パッケージ: TO-247-3

在庫6,688

IRGIB4615DPBF

Infineon Technologies

IGBT 600V FULLPAK220 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: 145µJ (on), 70µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP

パッケージ: TO-220-3 Full Pack

在庫5,840

IRGIB4610DPBF

Infineon Technologies

IGBT 600V FULLPAK220 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: 122µJ (on), 56µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP

パッケージ: TO-220-3 Full Pack

在庫5,456

IRGIB4607DPBF

Infineon Technologies

IGBT 600V FULLPAK220 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 7A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: 62µJ (on), 140µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP

パッケージ: TO-220-3 Full Pack

在庫6,880

IRGH4607DPBF

Infineon Technologies

IGBT 600V 8PQFN

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,144

IRGH4610DPBF

Infineon Technologies

IGBT 600V 8PQFN

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,040

IRGIB4640DPBF

Infineon Technologies

IGBT 600V 65A 250W TO220

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Power - Max: 250W
Switching Energy: 115µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 41ns/104ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 89ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TO-220-3

パッケージ: 8-PowerTDFN

在庫4,688

IRGIB4630DPBF

Infineon Technologies

IGBT 600V 47A 206W TO220

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 47A
Current - Collector Pulsed (Icm): 54A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Power - Max: 206W
Switching Energy: 95µJ (on), 350µJ (off)
Input Type: Standard
Gate Charge: 35nC
Td (on/off) @ 25°C: 40ns/105ns
Test Condition: 400V, 18A, 22 Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack

パッケージ: TO-220-3 Full Pack

在庫6,672

IRGIB4620DPBF

Infineon Technologies

IGBT 600V 32A 140W TO220

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 32A
Current - Collector Pulsed (Icm): 36A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Power - Max: 140W
Switching Energy: 185µJ (on), 355µJ (off)
Input Type: Standard
Gate Charge: 25nC
Td (on/off) @ 25°C: 31ns/83ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Reverse Recovery Time (trr): 68ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack

パッケージ: TO-220-3 Full Pack

在庫5,344

IRG8P75N65UD1PBF

Infineon Technologies

G8 650V 75A CO-PAK-247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,496

IRG8P75N65UD1-EPBF

Infineon Technologies

G8 650V 75A CO-PAK-247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,408

IRG8P45N65UD1PBF

Infineon Technologies

G8 650V 45A CO-PAK-247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,352

IRG8P45N65UD1-EPBF

Infineon Technologies

G8 650V 45A CO-PAK-247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,120

IRG8CH42K10F

Infineon Technologies

IGBT 1200V 40A DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 230nC
Td (on/off) @ 25°C: 40ns/240ns
Test Condition: 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: Die

在庫3,536

IRG8CH42K10D

Infineon Technologies

IGBT 1200V 40A DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,128

IRG8CH29K10F

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: 40ns/245ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: Die

在庫4,960

IRG8CH29K10D

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,976

IRG8CH20K10F

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 90nC
Td (on/off) @ 25°C: 20ns/170ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: Die

在庫4,304

IRG8CH20K10D

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,896