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Infineon Technologies |
TRANSISTOR NPN DBL 30V SOT143-4
- Transistor Type: 2 NPN, Base Collector Junction
- Applications: Current Mirror
- Voltage - Rated: 30V
- Current Rating: 100mA
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
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パッケージ: TO-253-4, TO-253AA |
在庫6,800 |
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Infineon Technologies |
TRANSISTOR NPN DOUBLE 45V SOT143
- Transistor Type: 2 NPN, Base Collector Junction
- Applications: Current Mirror
- Voltage - Rated: 30V
- Current Rating: 100mA
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143-4
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パッケージ: TO-253-4, TO-253AA |
在庫3,888 |
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Infineon Technologies |
TRANSISTOR NPN DOUBLE SOT-143
- Transistor Type: 2 NPN, Base Collector Junction
- Applications: Current Mirror
- Voltage - Rated: 30V
- Current Rating: 100mA
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143-4
|
パッケージ: TO-253-4, TO-253AA |
在庫4,192 |
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Infineon Technologies |
TRANSISTOR NPN DOUBLE SOT-143
- Transistor Type: 2 NPN, Base Collector Junction
- Applications: Current Mirror
- Voltage - Rated: 30V
- Current Rating: 100mA
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
|
パッケージ: TO-253-4, TO-253AA |
在庫29,220 |
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Infineon Technologies |
JFET N-CHAN 26A TO247-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 1200V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5µA @ 1200V
- Current Drain (Id) - Max: 26A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
- Resistance - RDS(On): 100 mOhm
- Power - Max: 190W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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パッケージ: TO-247-3 |
在庫3,424 |
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Infineon Technologies |
JFET N-CHAN 35A TO247-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 1200V
- Current - Drain (Idss) @ Vds (Vgs=0): 3.3µA @ 1200V
- Current Drain (Id) - Max: 35A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
- Resistance - RDS(On): 70 mOhm
- Power - Max: 238W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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パッケージ: TO-247-3 |
在庫6,912 |
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Infineon Technologies |
IGBT 600V TO247 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 90A
- Current - Collector Pulsed (Icm): 192A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
- Power - Max: 325W
- Switching Energy: 2.9mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 145nC
- Td (on/off) @ 25°C: 70ns/140ns
- Test Condition: 400V, 48A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 170ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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パッケージ: TO-247-3 |
在庫7,456 |
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Infineon Technologies |
IGBT 600V TO220 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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パッケージ: - |
在庫3,904 |
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Infineon Technologies |
IGBT 600V TO247 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
パッケージ: - |
在庫3,488 |
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Infineon Technologies |
IGBT 600V TO247 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 90A
- Current - Collector Pulsed (Icm): 192A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
- Power - Max: 325W
- Switching Energy: 2.9mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 145nC
- Td (on/off) @ 25°C: 70ns/140ns
- Test Condition: 400V, 48A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 170ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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パッケージ: TO-247-3 |
在庫5,456 |
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Infineon Technologies |
IGBT 600V TO247 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
パッケージ: - |
在庫5,200 |
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Infineon Technologies |
IGBT 600V TO247 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 160A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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パッケージ: TO-247-3 |
在庫6,688 |
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Infineon Technologies |
IGBT 600V FULLPAK220 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 15A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: 145µJ (on), 70µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
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パッケージ: TO-220-3 Full Pack |
在庫5,840 |
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Infineon Technologies |
IGBT 600V FULLPAK220 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 10A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: 122µJ (on), 56µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
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パッケージ: TO-220-3 Full Pack |
在庫5,456 |
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Infineon Technologies |
IGBT 600V FULLPAK220 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 7A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: 62µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
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パッケージ: TO-220-3 Full Pack |
在庫6,880 |
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Infineon Technologies |
IGBT 600V 8PQFN
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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パッケージ: - |
在庫6,144 |
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Infineon Technologies |
IGBT 600V 8PQFN
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
パッケージ: - |
在庫5,040 |
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Infineon Technologies |
IGBT 600V 65A 250W TO220
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 65A
- Current - Collector Pulsed (Icm): 72A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
- Power - Max: 250W
- Switching Energy: 115µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 75nC
- Td (on/off) @ 25°C: 41ns/104ns
- Test Condition: 400V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 89ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TO-220-3
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パッケージ: 8-PowerTDFN |
在庫4,688 |
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Infineon Technologies |
IGBT 600V 47A 206W TO220
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 47A
- Current - Collector Pulsed (Icm): 54A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
- Power - Max: 206W
- Switching Energy: 95µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 35nC
- Td (on/off) @ 25°C: 40ns/105ns
- Test Condition: 400V, 18A, 22 Ohm, 15V
- Reverse Recovery Time (trr): 100ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220 Full Pack
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パッケージ: TO-220-3 Full Pack |
在庫6,672 |
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Infineon Technologies |
IGBT 600V 32A 140W TO220
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 32A
- Current - Collector Pulsed (Icm): 36A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
- Power - Max: 140W
- Switching Energy: 185µJ (on), 355µJ (off)
- Input Type: Standard
- Gate Charge: 25nC
- Td (on/off) @ 25°C: 31ns/83ns
- Test Condition: 400V, 12A, 22 Ohm, 15V
- Reverse Recovery Time (trr): 68ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220 Full Pack
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パッケージ: TO-220-3 Full Pack |
在庫5,344 |
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Infineon Technologies |
G8 650V 75A CO-PAK-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
パッケージ: - |
在庫4,496 |
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Infineon Technologies |
G8 650V 75A CO-PAK-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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パッケージ: - |
在庫3,408 |
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Infineon Technologies |
G8 650V 45A CO-PAK-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
パッケージ: - |
在庫6,352 |
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Infineon Technologies |
G8 650V 45A CO-PAK-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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パッケージ: - |
在庫3,120 |
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Infineon Technologies |
IGBT 1200V 40A DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 230nC
- Td (on/off) @ 25°C: 40ns/240ns
- Test Condition: 600V, 40A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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パッケージ: Die |
在庫3,536 |
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Infineon Technologies |
IGBT 1200V 40A DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
パッケージ: - |
在庫2,128 |
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Infineon Technologies |
IGBT 1200V ULTRA FAST DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 160nC
- Td (on/off) @ 25°C: 40ns/245ns
- Test Condition: 600V, 25A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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パッケージ: Die |
在庫4,960 |
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Infineon Technologies |
IGBT 1200V ULTRA FAST DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
パッケージ: - |
在庫2,976 |
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Infineon Technologies |
IGBT 1200V ULTRA FAST DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 90nC
- Td (on/off) @ 25°C: 20ns/170ns
- Test Condition: 600V, 15A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
パッケージ: Die |
在庫4,304 |
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Infineon Technologies |
IGBT 1200V ULTRA FAST DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
パッケージ: - |
在庫2,896 |
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