ページ 1058 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PC28F256G18AF TR	Micron Technology Inc.	IC FLASH 256MBIT 96NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 96ns Access Time: 96ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (8x10)	パッケージ: 64-TBGA	在庫4,336	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	133MHz	96ns	96ns	1.7 V ~ 2 V	-30°C ~ 85°C (TC)	Surface Mount	64-TBGA	64-EasyBGA (8x10)
MT42L128M64D2MC-18 WT:A TR	Micron Technology Inc.	IC SDRAM 8GBIT 533MHZ 240FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 240-WFBGA Supplier Device Package: 240-FBGA (14x14)	パッケージ: 240-WFBGA	在庫5,456	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	Surface Mount	240-WFBGA	240-FBGA (14x14)
IDT71V3556S133BGI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	パッケージ: 119-BGA	在庫3,536	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
M29W320DT70ZE6F TR	Micron Technology Inc.	IC FLASH 32MBIT 70NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	パッケージ: 48-TFBGA	在庫2,816	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
CY7C09159AV-9AXC	Cypress Semiconductor Corp	IC SRAM 72KBIT 9NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 72Kb (8K x 9) Memory Interface: Parallel Clock Frequency: 67MHz Write Cycle Time - Word, Page: - Access Time: 9ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	パッケージ: 100-LQFP	在庫4,784	SRAM	SRAM - Dual Port, Synchronous	72Kb (8K x 9)	Parallel	67MHz	-	9ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
AT49F002NT-90PI	Microchip Technology	IC FLASH 2MBIT 90NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	パッケージ: 32-DIP (0.600", 15.24mm)	在庫6,464	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
AT24C32W-10SI	Microchip Technology	IC EEPROM 32KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.209", 5.30mm Width)	在庫3,936	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	10ms	900ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
MT53B768M32D4TT-062 WT ES:B TR	Micron Technology Inc.	IC SDRAM 24GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (768M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,264	DRAM	SDRAM - Mobile LPDDR4	24Gb (768M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
FM24CL16B-DGTR	Cypress Semiconductor Corp	IC FRAM 16KBIT 1MHZ 8TDFN Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: - Access Time: 550ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-TDFN (4x4.5)	パッケージ: 8-WDFN Exposed Pad	在庫3,504	FRAM	FRAM (Ferroelectric RAM)	16Kb (2K x 8)	I2C	1MHz	-	550ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-TDFN (4x4.5)
IS63LV1024-8KL-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 1MBIT 8NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 8ns Access Time: 8ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	パッケージ: 32-BSOJ (0.400", 10.16mm Width)	在庫6,416	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	8ns	8ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
SST25VF080B-50-4I-QAF	Microchip Technology	IC FLASH 8MBIT 50MHZ 8TDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 50MHz Write Cycle Time - Word, Page: 10µs Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	パッケージ: 8-WDFN Exposed Pad	在庫6,224	FLASH	FLASH	8Mb (1M x 8)	SPI	50MHz	10µs	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
93C76C-E/MS	Microchip Technology	IC EEPROM 8KBIT 3MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8, 512 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	在庫7,504	EEPROM	EEPROM	8Kb (1K x 8, 512 x 16)	SPI	3MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
CY7S1041G-10ZSXI	Cypress Semiconductor Corp	IC SRAM 4MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫7,760	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
93C46BT-I/MC	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x3)	パッケージ: 8-VFDFN Exposed Pad	在庫4,448	EEPROM	EEPROM	1Kb (64 x 16)	SPI	2MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x3)
IS61WV25616BLL-10TL	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫6,800	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
MT28EW512ABA1HPC-1SIT TR	Micron Technology Inc.	IC FLASH 512M PARALLEL 64LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 95ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	パッケージ: 64-LBGA	在庫7,008	FLASH	FLASH - NOR	512Mb (64M x 8, 32M x 16)	Parallel	-	60ns	95ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-LBGA (11x13)
SST26VF016B-104I/SN70SVAO	Microchip Technology	16MB SQI FLASH MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫2,064	FLASH	FLASH	16Mb (2M x 8)	SPI - Quad I/O	104MHz	1.5ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
W25Q64CVSFSG	Winbond Electronics	IC FLASH 64MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 80 MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	パッケージ: -	Request a Quote	FLASH	FLASH - NOR	64Mbit	SPI - Quad I/O	80 MHz	50µs, 3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
FEMC016GTTG7-T13-27	Flexxon Pte Ltd	IC FLASH 128GBIT EMMC 100FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (pSLC) Memory Size: 128Gbit Memory Interface: eMMC Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-FBGA (14x18)	パッケージ: -	在庫213	FLASH	FLASH - NAND (pSLC)	128Gbit	eMMC	200 MHz	-	-	2.7V ~ 3.6V	-25°C ~ 85°C	Surface Mount	100-LBGA	100-FBGA (14x18)
W971GG6NB-18	Winbond Electronics	IC DRAM 1GBIT SSTL 18 84TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gbit Memory Interface: SSTL_18 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: 58.125 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TFBGA (8x12.5)	パッケージ: -	在庫105	DRAM	SDRAM - DDR2	1Gbit	SSTL_18	533 MHz	15ns	58.125 ns	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-TFBGA (8x12.5)
5962-3829406MZA	Renesas Electronics Corporation	IC SRAM 64KBIT PARALLEL 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Supplier Device Package: 28-CDIP	パッケージ: -	Request a Quote	SRAM	SRAM - Asynchronous	64Kbit	Parallel	-	70ns	70 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.300", 7.62mm)	28-CDIP
W25N512GVBIT	Winbond Electronics	IC FLASH 512MBIT SPI 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 512Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 700µs Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (SLC)	512Mbit	SPI - Quad I/O	166 MHz	700µs	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
GD25LQ20CUIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 2MBIT SPI/QUAD 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 2.4ms Access Time: - Voltage - Supply: 1.65V ~ 2.1V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (3x2)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR	2Mbit	SPI - Quad I/O	104 MHz	50µs, 2.4ms	-	1.65V ~ 2.1V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (3x2)
CG7883AA	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W71NW10GF3FW	Winbond Electronics	IC FLASH RAM 1GBIT 400MHZ Memory Type: Non-Volatile, Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, DRAM - LPDDR2 Memory Size: 1Gbit (NAND), 1Gbit (LPDDR2) Memory Interface: - Clock Frequency: 400 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	FLASH, RAM	FLASH - NAND, DRAM - LPDDR2	1Gbit (NAND), 1Gbit (LPDDR2)	-	400 MHz	-	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	-	-	-
CY7C09269V-12AXC	Infineon Technologies	IC SRAM 256KBIT 12NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: 50 MHz Write Cycle Time - Word, Page: - Access Time: 12 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	パッケージ: -	Request a Quote	SRAM	SRAM - Dual Port, Synchronous	256Kbit	Parallel	50 MHz	-	12 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
QS7026A-20J	Quality Semiconductor	IC SRAM 256KBIT 50MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 256Kbit Memory Interface: - Clock Frequency: 50 MHz Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 5V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	SRAM	SRAM	256Kbit	-	50 MHz	20ns	20 ns	5V	0°C ~ 70°C	Surface Mount	-	-
MX25L32356ZBI03	Macronix	MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 32Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 50µs, 1.2ms Access Time: 6 ns Voltage - Supply: 2.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-USON (4x3)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	32Mbit	SPI - Quad I/O, QPI	133 MHz	50µs, 1.2ms	6 ns	2.65V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-USON (4x3)

PC28F256G18AF TR

Micron Technology Inc.

IC FLASH 256MBIT 96NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 96ns
Access Time: 96ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (8x10)

パッケージ: 64-TBGA

在庫4,336

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

133MHz

96ns

1.7 V ~ 2 V

-30°C ~ 85°C (TC)

Surface Mount

64-TBGA

64-EasyBGA (8x10)

MT42L128M64D2MC-18 WT:A TR

Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 240FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 240-WFBGA
Supplier Device Package: 240-FBGA (14x14)

パッケージ: 240-WFBGA

在庫5,456

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

Surface Mount

240-WFBGA

240-FBGA (14x14)

IDT71V3556S133BGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

パッケージ: 119-BGA

在庫3,536

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

M29W320DT70ZE6F TR

Micron Technology Inc.

IC FLASH 32MBIT 70NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

パッケージ: 48-TFBGA

在庫2,816

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

CY7C09159AV-9AXC

Cypress Semiconductor Corp

IC SRAM 72KBIT 9NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 72Kb (8K x 9)
Memory Interface: Parallel
Clock Frequency: 67MHz
Write Cycle Time - Word, Page: -
Access Time: 9ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

パッケージ: 100-LQFP

在庫4,784

SRAM

SRAM - Dual Port, Synchronous

72Kb (8K x 9)

Parallel

67MHz

-

9ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

AT49F002NT-90PI

Microchip Technology

IC FLASH 2MBIT 90NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

パッケージ: 32-DIP (0.600", 15.24mm)

在庫6,464

FLASH

2Mb (256K x 8)

Parallel

-

50µs

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

AT24C32W-10SI

Microchip Technology

IC EEPROM 32KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.209", 5.30mm Width)

在庫3,936

EEPROM

32Kb (4K x 8)

I2C

400kHz

10ms

900ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

MT53B768M32D4TT-062 WT ES:B TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (768M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,264

DRAM

SDRAM - Mobile LPDDR4

24Gb (768M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

FM24CL16B-DGTR

Cypress Semiconductor Corp

IC FRAM 16KBIT 1MHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: -
Access Time: 550ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-TDFN (4x4.5)

パッケージ: 8-WDFN Exposed Pad

在庫3,504

FRAM

FRAM (Ferroelectric RAM)

16Kb (2K x 8)

I2C

1MHz

-

550ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-TDFN (4x4.5)

IS63LV1024-8KL-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 8NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 8ns
Access Time: 8ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

パッケージ: 32-BSOJ (0.400", 10.16mm Width)

在庫6,416

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

8ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

SST25VF080B-50-4I-QAF

Microchip Technology

IC FLASH 8MBIT 50MHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 10µs
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

パッケージ: 8-WDFN Exposed Pad

在庫6,224

FLASH

8Mb (1M x 8)

SPI

50MHz

10µs

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

93C76C-E/MS

Microchip Technology

IC EEPROM 8KBIT 3MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8, 512 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

在庫7,504

EEPROM

8Kb (1K x 8, 512 x 16)

SPI

3MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

CY7S1041G-10ZSXI

Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫7,760

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

93C46BT-I/MC

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x3)

パッケージ: 8-VFDFN Exposed Pad

在庫4,448

EEPROM

1Kb (64 x 16)

SPI

2MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x3)

IS61WV25616BLL-10TL

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫6,800

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

MT28EW512ABA1HPC-1SIT TR

Micron Technology Inc.

IC FLASH 512M PARALLEL 64LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8, 32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 95ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LBGA (11x13)

パッケージ: 64-LBGA

在庫7,008

FLASH

FLASH - NOR

512Mb (64M x 8, 32M x 16)

Parallel

-

60ns

95ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-LBGA (11x13)

SST26VF016B-104I/SN70SVAO

Microchip Technology

16MB SQI FLASH MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫2,064

FLASH

16Mb (2M x 8)

SPI - Quad I/O

104MHz

1.5ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

W25Q64CVSFSG

Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 80 MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

パッケージ: -

Request a Quote

FLASH

FLASH - NOR

64Mbit

SPI - Quad I/O

80 MHz

50µs, 3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

FEMC016GTTG7-T13-27

Flexxon Pte Ltd

IC FLASH 128GBIT EMMC 100FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (pSLC)
Memory Size: 128Gbit
Memory Interface: eMMC
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-FBGA (14x18)

パッケージ: -

在庫213

FLASH

FLASH - NAND (pSLC)

128Gbit

eMMC

200 MHz

-

2.7V ~ 3.6V

-25°C ~ 85°C

Surface Mount

100-LBGA

100-FBGA (14x18)

W971GG6NB-18

Winbond Electronics

IC DRAM 1GBIT SSTL 18 84TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gbit
Memory Interface: SSTL_18
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 58.125 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TFBGA (8x12.5)

パッケージ: -

在庫105

DRAM

SDRAM - DDR2

1Gbit

SSTL_18

533 MHz

15ns

58.125 ns

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-TFBGA (8x12.5)

5962-3829406MZA

Renesas Electronics Corporation

IC SRAM 64KBIT PARALLEL 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP

パッケージ: -

Request a Quote

SRAM

SRAM - Asynchronous

64Kbit

Parallel

-

70ns

70 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.300", 7.62mm)

28-CDIP

W25N512GVBIT

Winbond Electronics

IC FLASH 512MBIT SPI 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 700µs
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

パッケージ: -

Request a Quote

FLASH

FLASH - NAND (SLC)

512Mbit

SPI - Quad I/O

166 MHz

700µs

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

GD25LQ20CUIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 2MBIT SPI/QUAD 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Access Time: -
Voltage - Supply: 1.65V ~ 2.1V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (3x2)

パッケージ: -

Request a Quote

FLASH

FLASH - NOR

2Mbit

SPI - Quad I/O

104 MHz

50µs, 2.4ms

-

1.65V ~ 2.1V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (3x2)

CG7883AA

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

W71NW10GF3FW

Winbond Electronics

IC FLASH RAM 1GBIT 400MHZ

Memory Type: Non-Volatile, Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, DRAM - LPDDR2
Memory Size: 1Gbit (NAND), 1Gbit (LPDDR2)
Memory Interface: -
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

FLASH, RAM

FLASH - NAND, DRAM - LPDDR2

1Gbit (NAND), 1Gbit (LPDDR2)

-

400 MHz

-

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

-

CY7C09269V-12AXC

Infineon Technologies

IC SRAM 256KBIT 12NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: -
Access Time: 12 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

パッケージ: -

Request a Quote

SRAM

SRAM - Dual Port, Synchronous

256Kbit

Parallel

50 MHz

-

12 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

QS7026A-20J

Quality Semiconductor

IC SRAM 256KBIT 50MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 256Kbit
Memory Interface: -
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 5V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

SRAM

256Kbit

-

50 MHz

20ns

20 ns

5V

0°C ~ 70°C

Surface Mount

-

MX25L32356ZBI03

Macronix

MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 50µs, 1.2ms
Access Time: 6 ns
Voltage - Supply: 2.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-USON (4x3)

パッケージ: -

Request a Quote

FLASH

FLASH - NOR (SLC)

32Mbit

SPI - Quad I/O, QPI

133 MHz

50µs, 1.2ms

6 ns

2.65V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-USON (4x3)