ページ 1106 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AT45DB321D-SU	Adesto Technologies	IC FLASH 32MBIT 66MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (528 Bytes x 8192 pages) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.209", 5.30mm Width)	在庫745,200	FLASH	FLASH	32Mb (528 Bytes x 8192 pages)	SPI	66MHz	6ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IDT71P79804S250BQGI8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 250MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 6.3ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	パッケージ: 165-TBGA	在庫7,616	SRAM	SRAM - Synchronous, DDR II	18Mb (1M x 18)	Parallel	250MHz	-	6.3ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IDT71016S20PH	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 20NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫5,136	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AT49BV512-90JC	Microchip Technology	IC FLASH 512KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 30µs Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	パッケージ: 32-LCC (J-Lead)	在庫56,976	FLASH	FLASH	512Kb (64K x 8)	Parallel	-	30µs	90ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
70V3389S5BFI8	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 5NS 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (64K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	パッケージ: 208-LFBGA	在庫4,736	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (64K x 18)	Parallel	-	-	5ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
70V9269S9PRF	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 9NS 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 9ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	パッケージ: 128-LQFP	在庫3,936	SRAM	SRAM - Dual Port, Synchronous	256Kb (16K x 16)	Parallel	-	-	9ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
70V05S25PF8	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 25NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	パッケージ: 64-LQFP	在庫7,568	SRAM	SRAM - Dual Port, Asynchronous	64Kb (8K x 8)	Parallel	-	25ns	25ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
MT29F64G08CBAAAWP-ITZ:A TR	Micron Technology Inc.	IC FLASH 64GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫2,480	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F32G08CBADAL83A3WC1	Micron Technology Inc.	IC FLASH 32GBIT WAFER Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,440	FLASH	FLASH - NAND	32Gb (4G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
S25FL128SAGNFV011	Cypress Semiconductor Corp	IC FLASH 128MBIT 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	パッケージ: 8-WDFN Exposed Pad	在庫4,480	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
IS61WV5128EDBLL-10BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 10NS 36TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-TFBGA Supplier Device Package: 36-TFBGA (6x8)	パッケージ: 36-TFBGA	在庫7,648	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	36-TFBGA	36-TFBGA (6x8)
AS7C3256A-20TCN	Alliance Memory, Inc.	IC SRAM 256KBIT 20NS 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP I	パッケージ: 28-TSSOP (0.465", 11.80mm Width)	在庫3,808	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP I
SST25VF010A-33-4I-QAE-T	Microchip Technology	IC FLASH 1MBIT 33MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 33MHz Write Cycle Time - Word, Page: 20µs Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON	パッケージ: 8-WDFN Exposed Pad	在庫5,408	FLASH	FLASH	1Mb (128K x 8)	SPI	33MHz	20µs	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON
DS1225AB-150IND+	Maxim Integrated	IC NVSRAM 64KBIT 150NS 28EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.600", 15.24mm) Supplier Device Package: 28-EDIP	パッケージ: 28-DIP Module (0.600", 15.24mm)	在庫4,496	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	Parallel	-	150ns	150ns	4.75 V ~ 5.25 V	-40°C ~ 85°C (TA)	Through Hole	28-DIP Module (0.600", 15.24mm)	28-EDIP
24AA64F-I/ST	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫8,112	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
S29GL512S10DHI013	Cypress Semiconductor Corp	IC FLASH 512M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	パッケージ: 64-LBGA	在庫3,088	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	-	60ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (9x9)
S29JL064J60BHA003	Cypress Semiconductor Corp	IC 64 MB FLASH MEMORY Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,408	-	-	-	-	-	-	-	-	-	-	-	-
MX25R512FZUIH1	Macronix	IC FLASH 512KBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,752	-	-	-	-	-	-	-	-	-	-	-	-
MT29F128G08CECGBJ4-37R:G TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,864	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MTFC64GAPALNA-AIT ES	Micron Technology Inc.	EMMC 512G MMC5.1 J58X AT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,456	-	-	-	-	-	-	-	-	-	-	-	-
CG7815AA	Cypress Semiconductor Corp	MEMORY SRAM ASYNC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,152	-	-	-	-	-	-	-	-	-	-	-	-
IS43TR16256B-125KBL	ISSI, Integrated Silicon Solution Inc	4G 1.5V DDR3 256MX16 1600MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫6,048	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
24FC512-I-MS	Microchip Technology	IC EEPROM 512KBIT I2C 1MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 400 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	パッケージ: -	Request a Quote	EEPROM	EEPROM	512Kbit	I2C	1 MHz	5ms	400 ns	1.7V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
MTFC256GAXATHF-WT	Micron Technology Inc.	UFS 2T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GD25D80CEIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 8MBIT SPI/DUAL 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 8Mbit Memory Interface: SPI - Dual I/O Clock Frequency: 100 MHz Write Cycle Time - Word, Page: 50µs, 4ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-XFDFN Exposed Pad Supplier Device Package: 8-USON (3x2)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	8Mbit	SPI - Dual I/O	100 MHz	50µs, 4ms	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-XFDFN Exposed Pad	8-USON (3x2)
CG8234AA	Infineon Technologies	IC SRAM MICROPOWER Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MR1A16AMYS35	Everspin Technologies Inc.	IC RAM 2MBIT PARALLEL 44TSOP2 Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2	パッケージ: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	2Mbit	Parallel	-	35ns	35 ns	3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP2
EM6GD08EWUF-10IH	Etron Technology, Inc.	IC DRAM 2GBIT PAR 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3	2Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)

AT45DB321D-SU

Adesto Technologies

IC FLASH 32MBIT 66MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (528 Bytes x 8192 pages)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.209", 5.30mm Width)

在庫745,200

FLASH

32Mb (528 Bytes x 8192 pages)

SPI

66MHz

6ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IDT71P79804S250BQGI8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 250MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 6.3ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

パッケージ: 165-TBGA

在庫7,616

SRAM

SRAM - Synchronous, DDR II

18Mb (1M x 18)

Parallel

250MHz

-

6.3ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IDT71016S20PH

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫5,136

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AT49BV512-90JC

Microchip Technology

IC FLASH 512KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 30µs
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

パッケージ: 32-LCC (J-Lead)

在庫56,976

FLASH

512Kb (64K x 8)

Parallel

-

30µs

90ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

70V3389S5BFI8

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 5NS 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (64K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

パッケージ: 208-LFBGA

在庫4,736

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (64K x 18)

Parallel

-

5ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

70V9269S9PRF

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 9NS 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 9ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

パッケージ: 128-LQFP

在庫3,936

SRAM

SRAM - Dual Port, Synchronous

256Kb (16K x 16)

Parallel

-

9ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

70V05S25PF8

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 25NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

パッケージ: 64-LQFP

在庫7,568

SRAM

SRAM - Dual Port, Asynchronous

64Kb (8K x 8)

Parallel

-

25ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

MT29F64G08CBAAAWP-ITZ:A TR

Micron Technology Inc.

IC FLASH 64GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫2,480

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F32G08CBADAL83A3WC1

Micron Technology Inc.

IC FLASH 32GBIT WAFER

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,440

FLASH

FLASH - NAND

32Gb (4G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

S25FL128SAGNFV011

Cypress Semiconductor Corp

IC FLASH 128MBIT 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

パッケージ: 8-WDFN Exposed Pad

在庫4,480

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

IS61WV5128EDBLL-10BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 36TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Supplier Device Package: 36-TFBGA (6x8)

パッケージ: 36-TFBGA

在庫7,648

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

36-TFBGA

36-TFBGA (6x8)

AS7C3256A-20TCN

Alliance Memory, Inc.

IC SRAM 256KBIT 20NS 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP I

パッケージ: 28-TSSOP (0.465", 11.80mm Width)

在庫3,808

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

20ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP I

SST25VF010A-33-4I-QAE-T

Microchip Technology

IC FLASH 1MBIT 33MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: 20µs
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON

パッケージ: 8-WDFN Exposed Pad

在庫5,408

FLASH

1Mb (128K x 8)

SPI

33MHz

20µs

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON

DS1225AB-150IND+

Maxim Integrated

IC NVSRAM 64KBIT 150NS 28EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP

パッケージ: 28-DIP Module (0.600", 15.24mm)

在庫4,496

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

Parallel

-

150ns

4.75 V ~ 5.25 V

-40°C ~ 85°C (TA)

Through Hole

28-DIP Module (0.600", 15.24mm)

28-EDIP

24AA64F-I/ST

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫8,112

EEPROM

64Kb (8K x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

S29GL512S10DHI013

Cypress Semiconductor Corp

IC FLASH 512M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

パッケージ: 64-LBGA

在庫3,088

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

-

60ns

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (9x9)

S29JL064J60BHA003

Cypress Semiconductor Corp

IC 64 MB FLASH MEMORY

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,408

-

MX25R512FZUIH1

Macronix

IC FLASH 512KBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,752

-

MT29F128G08CECGBJ4-37R:G TR

Micron Technology Inc.

IC FLASH 128G PARALLEL 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,864

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MTFC64GAPALNA-AIT ES

Micron Technology Inc.

EMMC 512G MMC5.1 J58X AT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,456

-

CG7815AA

Cypress Semiconductor Corp

MEMORY SRAM ASYNC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,152

-

IS43TR16256B-125KBL

ISSI, Integrated Silicon Solution Inc

4G 1.5V DDR3 256MX16 1600MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫6,048

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

24FC512-I-MS

Microchip Technology

IC EEPROM 512KBIT I2C 1MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

パッケージ: -

Request a Quote

EEPROM

512Kbit

I2C

1 MHz

5ms

400 ns

1.7V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

MTFC256GAXATHF-WT

Micron Technology Inc.

UFS 2T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

GD25D80CEIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 8MBIT SPI/DUAL 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 8Mbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: 50µs, 4ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: 8-USON (3x2)

パッケージ: -

Request a Quote

FLASH

FLASH - NOR (SLC)

8Mbit

SPI - Dual I/O

100 MHz

50µs, 4ms

6 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-XFDFN Exposed Pad

8-USON (3x2)

CG8234AA

Infineon Technologies

IC SRAM MICROPOWER

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MR1A16AMYS35

Everspin Technologies Inc.

IC RAM 2MBIT PARALLEL 44TSOP2

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2

パッケージ: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

2Mbit

Parallel

-

35ns

35 ns

3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP2

EM6GD08EWUF-10IH

Etron Technology, Inc.

IC DRAM 2GBIT PAR 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR3

2Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)