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レコード 62,144
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部品番号
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説明
パッケージ
在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
M29W400DB70ZE6F TR
Micron Technology Inc.

IC FLASH 4MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,640
FLASH
FLASH - NOR
4Mb (512K x 8, 256K x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
CY7C131E-55JXC
Cypress Semiconductor Corp

IC SRAM 8KBIT 55NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
パッケージ: 52-LCC (J-Lead)
在庫6,688
SRAM
SRAM - Dual Port, Asynchronous
8Kb (1K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
hot FM25H20-DG
Cypress Semiconductor Corp

IC FRAM 2MBIT 40MHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (5x6)
パッケージ: 8-WDFN Exposed Pad
在庫47,064
FRAM
FRAM (Ferroelectric RAM)
2Mb (256K x 8)
SPI
40MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-TDFN (5x6)
CY7C1062DV33-10BGIT
Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (512K x 32)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
パッケージ: 119-BGA
在庫4,976
SRAM
SRAM - Asynchronous
16Mb (512K x 32)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
M29F400BB90N1
Micron Technology Inc.

IC FLASH 4MBIT 90NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
パッケージ: 48-TFSOP (0.724", 18.40mm Width)
在庫5,696
FLASH
FLASH - NOR
4Mb (512K x 8, 256K x 16)
Parallel
-
90ns
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
hot MT48LC16M8A2BB-75 IT:G
Micron Technology Inc.

IC SDRAM 128MBIT 133MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-FBGA
  • Supplier Device Package: 60-FBGA (8x16)
パッケージ: 60-FBGA
在庫8,880
DRAM
SDRAM
128Mb (16M x 8)
Parallel
133MHz
15ns
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
60-FBGA
60-FBGA (8x16)
MT45W4MW16BFB-706 WT TR
Micron Technology Inc.

IC PSRAM 64MBIT 70NS 54VFBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (6x9)
パッケージ: 54-VFBGA
在庫3,312
PSRAM
PSRAM (Pseudo SRAM)
64Mb (4M x 16)
Parallel
-
70ns
70ns
1.7 V ~ 1.95 V
-30°C ~ 85°C (TC)
Surface Mount
54-VFBGA
54-VFBGA (6x9)
hot CY7C1399B-15ZXC
Cypress Semiconductor Corp

IC SRAM 256KBIT 15NS 28TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
パッケージ: 28-TSSOP (0.465", 11.80mm Width)
在庫5,152
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
MT44K16M36RB-093E IT:A TR
Micron Technology Inc.

IC RLDRAM 576MBIT 1.067GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 576Mb (16M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 1067MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-TBGA
  • Supplier Device Package: 168-BGA
パッケージ: 168-TBGA
在庫5,936
DRAM
DRAM
576Mb (16M x 36)
Parallel
1067MHz
-
8ns
1.28 V ~ 1.42 V
-40°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA
71321SA45J8
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 45NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
パッケージ: 52-LCC (J-Lead)
在庫5,184
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
71V632S5PFG
IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 2Mb (64K x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3.135 V ~ 3.63 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
パッケージ: 100-LQFP
在庫7,632
SRAM
SRAM - Synchronous
2Mb (64K x 32)
Parallel
100MHz
-
5ns
3.135 V ~ 3.63 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MR25H256MDF
Everspin Technologies Inc.

IC MRAM 256KBIT 40MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP, Small Flag (5x6)
パッケージ: 8-VDFN Exposed Pad
在庫5,584
RAM
MRAM (Magnetoresistive RAM)
256Kb (32K x 8)
SPI
40MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-DFN-EP, Small Flag (5x6)
MT48LC2M32B2P-5:J TR
Micron Technology Inc.

IC SDRAM 64MBIT 200MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
パッケージ: 86-TFSOP (0.400", 10.16mm Width)
在庫4,288
DRAM
SDRAM
64Mb (2M x 32)
Parallel
200MHz
-
4.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
ATAES132A-MAHER-S
Microchip Technology

IC EEPROM 32KBIT 1MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (2K x 16)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 9ms
  • Access Time: 550ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
パッケージ: 8-UFDFN Exposed Pad
在庫6,656
EEPROM
EEPROM
32Kb (2K x 16)
I2C
1MHz
9ms
550ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
24LC01BT-E/LT
Microchip Technology

IC EEPROM 1KBIT 400KHZ SC70-5

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 3500ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: SC-70-5
パッケージ: 5-TSSOP, SC-70-5, SOT-353
在庫6,304
EEPROM
EEPROM
1Kb (128 x 8)
I2C
400kHz
5ms
3500ns
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
SC-70-5
hot IS43TR16128B-125KBL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
パッケージ: 96-TFBGA
在庫11,340
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
S29GL064N90BFI032
Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-FBGA (8.15x6.15)
パッケージ: 48-VFBGA
在庫4,080
FLASH
FLASH - NOR
64Mb (8M x 8, 4M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-FBGA (8.15x6.15)
MT29F1G08ABAEAH4-AITX:E
Micron Technology Inc.

IC FLASH 1G PARALLEL FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
パッケージ: 63-VFBGA
在庫7,264
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
71T75602S100PFG
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR (ZBT)
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 2.375V ~ 2.625V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
パッケージ: -
Request a Quote
SRAM
SRAM - Synchronous, SDR (ZBT)
18Mbit
Parallel
100 MHz
-
5 ns
2.375V ~ 2.625V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
AS6C1616B-55TIN
Alliance Memory, Inc.

MEMORY

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
パッケージ: -
Request a Quote
SRAM
SRAM - Asynchronous
16Mbit
Parallel
-
55ns
55 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
IS46LQ32640AL-062BLA2
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 2

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-VFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
パッケージ: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
2Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
MTFC64GAZAOTD-AIT-TR
Micron Technology Inc.

UFS 512G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
7164S45TPGI
Renesas Electronics Corporation

IC SRAM

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.300", 7.62mm)
  • Supplier Device Package: 28-PDIP
パッケージ: -
Request a Quote
SRAM
SRAM - Asynchronous
64Kbit
Parallel
-
45ns
45 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Through Hole
28-DIP (0.300", 7.62mm)
28-PDIP
CAT93C56W
onsemi

IC EEPROM 2KBIT MICROWIRE 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 2 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 250 ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: -
Request a Quote
EEPROM
EEPROM
2Kbit
Microwire
2 MHz
-
250 ns
2.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
BR25H1MF-5ACE2
Rohm Semiconductor

IC EEPROM 1KBIT SPI 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: 3.5ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
パッケージ: -
在庫7,500
EEPROM
EEPROM
1Mbit
SPI
20 MHz
3.5ms
-
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
S99GL256S0040
Spansion

256KB NAND FLASH

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
S-24C16CH-T8T2U3
ABLIC Inc.

LINEAR IC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kbit
  • Memory Interface: I2C
  • Clock Frequency: 400 kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900 ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
パッケージ: -
Request a Quote
EEPROM
EEPROM
16Kbit
I2C
400 kHz
5ms
900 ns
2.5V ~ 5.5V
-40°C ~ 150°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SM662PAD-BFSS-1
Silicon Motion, Inc.

IC FLASH 320GBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 320Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TBGA
  • Supplier Device Package: 153-BGA (11.5x13)
パッケージ: -
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FLASH
FLASH - NAND (SLC)
320Gbit
eMMC
-
-
-
-
-40°C ~ 105°C
Surface Mount
153-TBGA
153-BGA (11.5x13)
SFEM020GB2ED1TO-A-6F-11P-STD
Swissbit

IC FLASH 160GBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (pSLC)
  • Memory Size: 160Gbit
  • Memory Interface: eMMC
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
パッケージ: -
在庫3
FLASH
FLASH - NAND (pSLC)
160Gbit
eMMC
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
W25Q64JVSFJQ-TR
Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: -
Request a Quote
FLASH
FLASH - NOR
64Mbit
SPI - Quad I/O
133 MHz
3ms
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC