ページ 1264 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT53B384M64D4NK-053 WT ES:A TR	Micron Technology Inc.	IC SDRAM 24GBIT 1.8GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,080	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT42L128M32D1LF-18 WT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-FBGA (12x12)	パッケージ: 168-WFBGA	在庫4,304	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	Surface Mount	168-WFBGA	168-FBGA (12x12)
IS25LP064-JBLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 64MBIT 133MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.209", 5.30mm Width)	在庫2,224	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	133MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
AT45DB321D-MU-SL955	Adesto Technologies	IC FLASH 32MBIT 66MHZ 8VDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (512 Bytes x 8192 pages) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFN (6x5)	パッケージ: 8-VDFN Exposed Pad	在庫5,120	FLASH	FLASH	32Mb (512 Bytes x 8192 pages)	SPI	66MHz	6ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-VDFN Exposed Pad	8-VDFN (6x5)
IS25WD040-JBLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 4MBIT 80MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 80MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.209", 5.30mm Width)	在庫2,704	FLASH	FLASH - NOR	4Mb (512K x 8)	SPI	80MHz	3ms	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
RC48F4400P0VB0E4	Micron Technology Inc.	IC FLASH 512MBIT 100NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-EasyBGA (8x10)	パッケージ: 64-LBGA	在庫5,536	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	52MHz	100ns	100ns	1.7 V ~ 2 V	-40°C ~ 85°C (TC)	Surface Mount	64-LBGA	64-EasyBGA (8x10)
IS45S32400B-6BLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 90FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫3,904	DRAM	SDRAM	128Mb (4M x 32)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
MT47H32M16CC-5E L:B TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 84FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 600ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (12x12.5)	パッケージ: 84-TFBGA	在庫6,512	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	200MHz	15ns	600ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (12x12.5)
MT46V128M4P-5B:F TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (128M x 4) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	パッケージ: 66-TSSOP (0.400", 10.16mm Width)	在庫7,200	DRAM	SDRAM - DDR	512Mb (128M x 4)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
AT49LV040-12VI	Microchip Technology	IC FLASH 4MBIT 120NS 32VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	パッケージ: 32-TFSOP (0.488", 12.40mm Width)	在庫2,976	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	50µs	120ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
AT28C256-25FM/883-949	Microchip Technology	IC EEPROM 256KBIT 250NS 28FLATPK Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 250ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,552	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	250ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TC)	-	-	-
IS61LPS25636A-200TQ2LI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	パッケージ: 100-LQFP	在庫5,696	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
CY7C1347G-133BGXC	Cypress Semiconductor Corp	IC SRAM 4.5MBIT 133MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4ns Voltage - Supply: 3.15 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	パッケージ: 119-BGA	在庫3,808	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4ns	3.15 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
N25Q128A13E1240E	Micron Technology Inc.	IC FLASH 128MBIT 108MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (32M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	パッケージ: 24-TBGA	在庫2,544	FLASH	FLASH - NOR	128Mb (32M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
24AA04H-I/SN	Microchip Technology	IC EEPROM 4KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,712	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S-93L66AD0I-I8T1U	SII Semiconductor Corporation	EEPROM Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 8ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SNT-8A	パッケージ: 8-SMD, Flat Lead	在庫4,160	EEPROM	EEPROM	4Kb (256 x 16)	SPI	2MHz	8ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SMD, Flat Lead	SNT-8A
MT25QL128ABA1EW7-0SIT	Micron Technology Inc.	IC FLASH 128MBIT 133MHZ 8WPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPDFN (6x5)(MLP8)	パッケージ: 8-WDFN Exposed Pad	在庫2,848	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WPDFN (6x5)(MLP8)
AT27LV512A-90JU-T	Microchip Technology	IC OTP 512KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	パッケージ: 32-LCC (J-Lead)	在庫6,208	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	90ns	3 V ~ 3.6 V, 4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AS4C32M16SB-7TCN	Alliance Memory, Inc.	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: 14ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫15,972	DRAM	SDRAM	512Mb (32M x 16)	Parallel	143MHz	14ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
S34MS02G100TFI000	Cypress Semiconductor Corp	IC FLASH 2GBIT 45NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫18,144	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	45ns	45ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
71V30VL55TFI8	IDT, Integrated Device Technology Inc	IC SRAM 8K PARALLEL 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	パッケージ: 64-LQFP	在庫6,160	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	55ns	55ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LQFP	64-TQFP (10x10)
SST26VF016B-80E/MF	Microchip Technology	16MBIT SPI/SQI FLASH 125C INDUST Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16M (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WDFN (5x6)	パッケージ: 8-WDFN Exposed Pad	在庫10,968	FLASH	FLASH	16M (2M x 8)	SPI - Quad I/O	80MHz	1.5ms	-	2.3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WDFN (5x6)
24LC02BT-E/ST16KVAO	Microchip Technology	2K 256X8 2.5V SERIAL EE Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫3,904	EEPROM	EEPROM	2Kb (256 x 8)	I²C	400kHz	5ms	900ns	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MTFC128GAPALPH-AIT	Micron Technology Inc.	IC FLASH 1TBIT MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tbit Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	FLASH	FLASH - NAND	1Tbit	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	-	-	-
W25Q128JVPJM	Winbond Electronics	IC FLASH 128MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	3ms	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
CY7C245A-25SC	Cypress Semiconductor Corp	IC EPROM 16KBIT PARALLEL Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 16Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 25 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	EPROM	EPROM - OTP	16Kbit	Parallel	-	-	25 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	-	-	-
MT29F4T08EMLCHD4-QJ-C	Micron Technology Inc.	TLC 4T 512GX8 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MTC8C1084S1SC56BD1	Micron Technology Inc.	DDR5 16GB SODIMM VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

MT53B384M64D4NK-053 WT ES:A TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.8GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,080

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT42L128M32D1LF-18 WT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-FBGA (12x12)

パッケージ: 168-WFBGA

在庫4,304

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

Surface Mount

168-WFBGA

168-FBGA (12x12)

IS25LP064-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 64MBIT 133MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.209", 5.30mm Width)

在庫2,224

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

133MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

AT45DB321D-MU-SL955

Adesto Technologies

IC FLASH 32MBIT 66MHZ 8VDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (512 Bytes x 8192 pages)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFN (6x5)

パッケージ: 8-VDFN Exposed Pad

在庫5,120

FLASH

32Mb (512 Bytes x 8192 pages)

SPI

66MHz

6ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-VDFN Exposed Pad

8-VDFN (6x5)

IS25WD040-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 4MBIT 80MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.209", 5.30mm Width)

在庫2,704

FLASH

FLASH - NOR

4Mb (512K x 8)

SPI

80MHz

3ms

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

RC48F4400P0VB0E4

Micron Technology Inc.

IC FLASH 512MBIT 100NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-EasyBGA (8x10)

パッケージ: 64-LBGA

在庫5,536

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

52MHz

100ns

1.7 V ~ 2 V

-40°C ~ 85°C (TC)

Surface Mount

64-LBGA

64-EasyBGA (8x10)

IS45S32400B-6BLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 90FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫3,904

DRAM

SDRAM

128Mb (4M x 32)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

MT47H32M16CC-5E L:B TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 84FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 600ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (12x12.5)

パッケージ: 84-TFBGA

在庫6,512

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

200MHz

15ns

600ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (12x12.5)

MT46V128M4P-5B:F TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (128M x 4)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

パッケージ: 66-TSSOP (0.400", 10.16mm Width)

在庫7,200

DRAM

SDRAM - DDR

512Mb (128M x 4)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

AT49LV040-12VI

Microchip Technology

IC FLASH 4MBIT 120NS 32VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

パッケージ: 32-TFSOP (0.488", 12.40mm Width)

在庫2,976

FLASH

4Mb (512K x 8)

Parallel

-

50µs

120ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

AT28C256-25FM/883-949

Microchip Technology

IC EEPROM 256KBIT 250NS 28FLATPK

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 250ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,552

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

250ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TC)

-

IS61LPS25636A-200TQ2LI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

パッケージ: 100-LQFP

在庫5,696

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

CY7C1347G-133BGXC

Cypress Semiconductor Corp

IC SRAM 4.5MBIT 133MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4ns
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

パッケージ: 119-BGA

在庫3,808

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4ns

3.15 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

N25Q128A13E1240E

Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

パッケージ: 24-TBGA

在庫2,544

FLASH

FLASH - NOR

128Mb (32M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

24AA04H-I/SN

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,712

EEPROM

4Kb (256 x 8 x 2)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S-93L66AD0I-I8T1U

SII Semiconductor Corporation

EEPROM

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 8ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SNT-8A

パッケージ: 8-SMD, Flat Lead

在庫4,160

EEPROM

4Kb (256 x 16)

SPI

2MHz

8ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SMD, Flat Lead

SNT-8A

MT25QL128ABA1EW7-0SIT

Micron Technology Inc.

IC FLASH 128MBIT 133MHZ 8WPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPDFN (6x5)(MLP8)

パッケージ: 8-WDFN Exposed Pad

在庫2,848

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WPDFN (6x5)(MLP8)

AT27LV512A-90JU-T

Microchip Technology

IC OTP 512KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

パッケージ: 32-LCC (J-Lead)

在庫6,208

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

90ns

3 V ~ 3.6 V, 4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AS4C32M16SB-7TCN

Alliance Memory, Inc.

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫15,972

DRAM

SDRAM

512Mb (32M x 16)

Parallel

143MHz

14ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

S34MS02G100TFI000

Cypress Semiconductor Corp

IC FLASH 2GBIT 45NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫18,144

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

45ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

71V30VL55TFI8

IDT, Integrated Device Technology Inc

IC SRAM 8K PARALLEL 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

パッケージ: 64-LQFP

在庫6,160

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

55ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LQFP

64-TQFP (10x10)

SST26VF016B-80E/MF

Microchip Technology

16MBIT SPI/SQI FLASH 125C INDUST

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16M (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WDFN (5x6)

パッケージ: 8-WDFN Exposed Pad

在庫10,968

FLASH

16M (2M x 8)

SPI - Quad I/O

80MHz

1.5ms

-

2.3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WDFN (5x6)

24LC02BT-E/ST16KVAO

Microchip Technology

2K 256X8 2.5V SERIAL EE

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫3,904

EEPROM

2Kb (256 x 8)

I²C

400kHz

5ms

900ns

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MTFC128GAPALPH-AIT

Micron Technology Inc.

IC FLASH 1TBIT MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tbit
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

FLASH

FLASH - NAND

1Tbit

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

-

W25Q128JVPJM

Winbond Electronics

IC FLASH 128MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

パッケージ: -

Request a Quote

FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

3ms

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

CY7C245A-25SC

Cypress Semiconductor Corp

IC EPROM 16KBIT PARALLEL

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 16Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 25 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

EPROM

EPROM - OTP

16Kbit

Parallel

-

25 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

-

MT29F4T08EMLCHD4-QJ-C

Micron Technology Inc.

TLC 4T 512GX8 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MTC8C1084S1SC56BD1

Micron Technology Inc.

DDR5 16GB SODIMM VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-