ページ 1271 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
R1LV0108ESF-5SI#S1	Renesas Electronics America	IC SRAM 1MBIT 55NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP (8x20)	パッケージ: 32-TFSOP (0.724", 18.40mm Width)	在庫3,360	SRAM	SRAM	1Mb (128K x 8)	Parallel	-	55ns	55ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP (8x20)
N25Q064A13E12D0F TR	Micron Technology Inc.	IC FLASH SER NOR SLC 16MX4 TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (16M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,280	FLASH	FLASH - NOR	64Mb (16M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT46V32M16CV-5B:J TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x12.5)	パッケージ: 60-TFBGA	在庫7,232	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-FBGA (8x12.5)
MT29F256G08CJAAAWP:A	Micron Technology Inc.	IC FLASH 256GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫4,704	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
24LC014T-E/OT	Microchip Technology	IC EEPROM 1KBIT 400KHZ SOT23-6 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	パッケージ: SOT-23-6	在庫7,648	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-6	SOT-23-6
SST49LF016C-33-4C-WHE-T	Microchip Technology	IC FLASH 16MBIT 33MHZ 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8) Memory Interface: Parallel Clock Frequency: 33MHz Write Cycle Time - Word, Page: 10µs Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-TSOP	パッケージ: 32-TFSOP (0.488", 12.40mm Width)	在庫2,544	FLASH	FLASH	16Mb (2M x 8)	Parallel	33MHz	10µs	-	3 V ~ 3.6 V	0°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-TSOP
CY7C12451KV18-400BZC	Cypress Semiconductor Corp	IC SRAM 36MBIT 400MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: 165-LBGA	在庫2,176	SRAM	SRAM - Synchronous, QDR II+	36Mb (1M x 36)	Parallel	400MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IS42S32800D-7TL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 143MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	パッケージ: 86-TFSOP (0.400", 10.16mm Width)	在庫7,728	DRAM	SDRAM	256Mb (8M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
IS42S16100C1-7T-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 143MHZ 50TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 50-TSOP (0.400", 10.16mm Width) Supplier Device Package: 50-TSOP II	パッケージ: 50-TSOP (0.400", 10.16mm Width)	在庫5,472	DRAM	SDRAM	16Mb (1M x 16)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
AT49LH004-33TC-T	Microchip Technology	IC FLASH 4MBIT 33MHZ 40TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: 33MHz Write Cycle Time - Word, Page: 50µs Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 40-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 40-TSOP	パッケージ: 40-TFSOP (0.724", 18.40mm Width)	在庫6,480	FLASH	FLASH	4Mb (512K x 8)	Parallel	33MHz	50µs	-	3 V ~ 3.6 V	0°C ~ 85°C (TC)	Surface Mount	40-TFSOP (0.724", 18.40mm Width)	40-TSOP
AT27LV256A-90RI	Microchip Technology	IC OTP 256KBIT 90NS 28SOIC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOIC	パッケージ: 28-SOIC (0.342", 8.69mm Width)	在庫7,264	EPROM	EPROM - OTP	256Kb (32K x 8)	Parallel	-	-	90ns	3 V ~ 3.6 V, 4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOIC
AT27LV010A-15VI	Microchip Technology	IC OTP 1MBIT 150NS 32VSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	パッケージ: 32-TFSOP (0.488", 12.40mm Width)	在庫4,992	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	150ns	3 V ~ 3.6 V, 4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
AT25640N-10SI-1.8	Microchip Technology	IC EEPROM 64KBIT 3MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫5,824	EEPROM	EEPROM	64Kb (8K x 8)	SPI	3MHz	5ms	-	1.8 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
71V65803S150BGI8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 150MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	パッケージ: 119-BGA	在庫6,352	SRAM	SRAM - Synchronous ZBT	9Mb (512K x 18)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
AS4C128M8D3A-12BAN	Alliance Memory, Inc.	IC SDRAM 1GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (10.5x8)	パッケージ: 78-VFBGA	在庫5,024	DRAM	SDRAM - DDR3	1Gb (128M x 8)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	78-VFBGA	78-FBGA (10.5x8)
AS6C2008-55STINTR	Alliance Memory, Inc.	IC SRAM 2MBIT 55NS 32STSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-sTSOP I	パッケージ: 32-LFSOP (0.465", 11.80mm Width)	在庫7,808	SRAM	SRAM - Asynchronous	2Mb (256K x 8)	Parallel	-	55ns	55ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-LFSOP (0.465", 11.80mm Width)	32-sTSOP I
24C01C-I/P	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 1ms Access Time: 900ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫5,232	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	1ms	900ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
CY7C1515KV18-250BZXC	Cypress Semiconductor Corp	IC SRAM 72MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: 165-LBGA	在庫3,408	SRAM	SRAM - Synchronous, QDR II	72Mb (2M x 36)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
25AA512-I/SN	Microchip Technology	IC EEPROM 512KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫68,112	EEPROM	EEPROM	512Kb (64K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
W25Q80JVSVIQ TR	Winbond Electronics	IC FLASH 8M SPI 133MHZ 8VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,600	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	133MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
IS66WVE2M16EBLL-70BLI-TR	ISSI, Integrated Silicon Solution Inc	IC PSRAM 32M PARALLEL 48TFBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 32Mb (2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	パッケージ: 48-TFBGA	在庫4,736	PSRAM	PSRAM (Pseudo SRAM)	32Mb (2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
S25FS064SAGMFB010	Cypress Semiconductor Corp	IC NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.209", 5.30mm Width)	在庫7,600	-	-	-	-	-	-	-	-	-	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IS61NVF25672-6.5B1	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 209LFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (256K x 72) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 209-BGA Supplier Device Package: 209-LFBGA (14x22)	パッケージ: 209-BGA	在庫5,936	SRAM	SRAM - Synchronous	18Mb (256K x 72)	Parallel	133MHz	-	6.5ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	209-BGA	209-LFBGA (14x22)
MT53D768M64D8WF-053 WT ES:D	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,440	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D1024M64D8WF-053 WT:D	Micron Technology Inc.	IC DRAM 64G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,136	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
AM29LV160DT-70EC-T	AMD	FLASH NOR 16MB TSOP TOP BLK 3V 7 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 3V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 48-TSOP	パッケージ: -	Request a Quote	FLASH	FLASH - NOR	16Mbit	Parallel	-	70ns	70 ns	3V	0°C ~ 70°C	Surface Mount	-	48-TSOP
W25R512JVEIN	Winbond Electronics	RPMC SPIFLASH, 3V, 512M-BIT, DRV Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: SPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	512Mbit	SPI	133 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
FM25C040VMT8X	Fairchild Semiconductor	EEPROM, 512X8, SERIAL, CMOS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GS8322Z36AGD-333I	GSI Technology Inc.	IC SRAM 36MBIT PARALLEL 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, ZBT Memory Size: 36Mbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (13x15)	パッケージ: -	Request a Quote	SRAM	SRAM - Synchronous, ZBT	36Mbit	Parallel	333 MHz	-	-	2.3V ~ 2.7V, 3V ~ 3.6V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (13x15)
GS8342QT19BGD-333I	GSI Technology Inc.	IC SRAM 36MBIT PARALLEL 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 36Mbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (15x13)	パッケージ: -	Request a Quote	SRAM	SRAM - Quad Port, Synchronous	36Mbit	Parallel	333 MHz	-	-	1.7V ~ 1.9V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (15x13)

R1LV0108ESF-5SI#S1

Renesas Electronics America

IC SRAM 1MBIT 55NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP (8x20)

パッケージ: 32-TFSOP (0.724", 18.40mm Width)

在庫3,360

SRAM

1Mb (128K x 8)

Parallel

-

55ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP (8x20)

N25Q064A13E12D0F TR

Micron Technology Inc.

IC FLASH SER NOR SLC 16MX4 TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,280

FLASH

FLASH - NOR

64Mb (16M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT46V32M16CV-5B:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x12.5)

パッケージ: 60-TFBGA

在庫7,232

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-FBGA (8x12.5)

MT29F256G08CJAAAWP:A

Micron Technology Inc.

IC FLASH 256GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫4,704

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

24LC014T-E/OT

Microchip Technology

IC EEPROM 1KBIT 400KHZ SOT23-6

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

パッケージ: SOT-23-6

在庫7,648

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-6

SST49LF016C-33-4C-WHE-T

Microchip Technology

IC FLASH 16MBIT 33MHZ 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Memory Interface: Parallel
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: 10µs
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-TSOP

パッケージ: 32-TFSOP (0.488", 12.40mm Width)

在庫2,544

FLASH

16Mb (2M x 8)

Parallel

33MHz

10µs

-

3 V ~ 3.6 V

0°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-TSOP

CY7C12451KV18-400BZC

Cypress Semiconductor Corp

IC SRAM 36MBIT 400MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: 165-LBGA

在庫2,176

SRAM

SRAM - Synchronous, QDR II+

36Mb (1M x 36)

Parallel

400MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IS42S32800D-7TL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

パッケージ: 86-TFSOP (0.400", 10.16mm Width)

在庫7,728

DRAM

SDRAM

256Mb (8M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

IS42S16100C1-7T-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 50TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II

パッケージ: 50-TSOP (0.400", 10.16mm Width)

在庫5,472

DRAM

SDRAM

16Mb (1M x 16)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

50-TSOP (0.400", 10.16mm Width)

50-TSOP II

AT49LH004-33TC-T

Microchip Technology

IC FLASH 4MBIT 33MHZ 40TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: 50µs
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 40-TSOP

パッケージ: 40-TFSOP (0.724", 18.40mm Width)

在庫6,480

FLASH

4Mb (512K x 8)

Parallel

33MHz

50µs

-

3 V ~ 3.6 V

0°C ~ 85°C (TC)

Surface Mount

40-TFSOP (0.724", 18.40mm Width)

40-TSOP

AT27LV256A-90RI

Microchip Technology

IC OTP 256KBIT 90NS 28SOIC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOIC

パッケージ: 28-SOIC (0.342", 8.69mm Width)

在庫7,264

EPROM

EPROM - OTP

256Kb (32K x 8)

Parallel

-

90ns

3 V ~ 3.6 V, 4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

28-SOIC (0.342", 8.69mm Width)

28-SOIC

AT27LV010A-15VI

Microchip Technology

IC OTP 1MBIT 150NS 32VSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 150ns
Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

パッケージ: 32-TFSOP (0.488", 12.40mm Width)

在庫4,992

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

150ns

3 V ~ 3.6 V, 4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

AT25640N-10SI-1.8

Microchip Technology

IC EEPROM 64KBIT 3MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫5,824

EEPROM

64Kb (8K x 8)

SPI

3MHz

5ms

-

1.8 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

71V65803S150BGI8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

パッケージ: 119-BGA

在庫6,352

SRAM

SRAM - Synchronous ZBT

9Mb (512K x 18)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

AS4C128M8D3A-12BAN

Alliance Memory, Inc.

IC SDRAM 1GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x8)

パッケージ: 78-VFBGA

在庫5,024

DRAM

SDRAM - DDR3

1Gb (128M x 8)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

78-VFBGA

78-FBGA (10.5x8)

AS6C2008-55STINTR

Alliance Memory, Inc.

IC SRAM 2MBIT 55NS 32STSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP I

パッケージ: 32-LFSOP (0.465", 11.80mm Width)

在庫7,808

SRAM

SRAM - Asynchronous

2Mb (256K x 8)

Parallel

-

55ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-LFSOP (0.465", 11.80mm Width)

32-sTSOP I

24C01C-I/P

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 1ms
Access Time: 900ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫5,232

EEPROM

1Kb (128 x 8)

I2C

400kHz

1ms

900ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

CY7C1515KV18-250BZXC

Cypress Semiconductor Corp

IC SRAM 72MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: 165-LBGA

在庫3,408

SRAM

SRAM - Synchronous, QDR II

72Mb (2M x 36)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

25AA512-I/SN

Microchip Technology

IC EEPROM 512KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫68,112

EEPROM

512Kb (64K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

W25Q80JVSVIQ TR

Winbond Electronics

IC FLASH 8M SPI 133MHZ 8VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,600

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

133MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

IS66WVE2M16EBLL-70BLI-TR

ISSI, Integrated Silicon Solution Inc

IC PSRAM 32M PARALLEL 48TFBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 32Mb (2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

パッケージ: 48-TFBGA

在庫4,736

PSRAM

PSRAM (Pseudo SRAM)

32Mb (2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

S25FS064SAGMFB010

Cypress Semiconductor Corp

IC NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.209", 5.30mm Width)

在庫7,600

-

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IS61NVF25672-6.5B1

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 209LFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (256K x 72)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 209-BGA
Supplier Device Package: 209-LFBGA (14x22)

パッケージ: 209-BGA

在庫5,936

SRAM

SRAM - Synchronous

18Mb (256K x 72)

Parallel

133MHz

-

6.5ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

209-BGA

209-LFBGA (14x22)

MT53D768M64D8WF-053 WT ES:D

Micron Technology Inc.

IC DRAM 48G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,440

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D1024M64D8WF-053 WT:D

Micron Technology Inc.

IC DRAM 64G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,136

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

AM29LV160DT-70EC-T

AMD

FLASH NOR 16MB TSOP TOP BLK 3V 7

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 3V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 48-TSOP

パッケージ: -

Request a Quote

FLASH

FLASH - NOR

16Mbit

Parallel

-

70ns

70 ns

3V

0°C ~ 70°C

Surface Mount

-

48-TSOP

W25R512JVEIN

Winbond Electronics

RPMC SPIFLASH, 3V, 512M-BIT, DRV

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: SPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

パッケージ: -

Request a Quote

FLASH

FLASH - NOR (SLC)

512Mbit

SPI

133 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

FM25C040VMT8X

Fairchild Semiconductor

EEPROM, 512X8, SERIAL, CMOS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

GS8322Z36AGD-333I

GSI Technology Inc.

IC SRAM 36MBIT PARALLEL 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, ZBT
Memory Size: 36Mbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (13x15)

パッケージ: -

Request a Quote

SRAM

SRAM - Synchronous, ZBT

36Mbit

Parallel

333 MHz

-

2.3V ~ 2.7V, 3V ~ 3.6V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (13x15)

GS8342QT19BGD-333I

GSI Technology Inc.

IC SRAM 36MBIT PARALLEL 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 36Mbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (15x13)

パッケージ: -

Request a Quote

SRAM

SRAM - Quad Port, Synchronous

36Mbit

Parallel

333 MHz

-

1.7V ~ 1.9V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (15x13)