ページ 13 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS42RM32800D-75TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫6,800	DRAM	SDRAM - Mobile	256Mb (8M x 32)	Parallel	133MHz	-	5.4ns	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
MT29F256G08CJAAAWP-IT:A TR	Micron Technology Inc.	IC FLASH 256GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,312	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
IS45S16160D-7BLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 143MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x13)	パッケージ: 54-TFBGA	在庫2,992	DRAM	SDRAM	256Mb (16M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x13)
CY7C1515SV18-167BZC	Cypress Semiconductor Corp	IC SRAM 72MBIT 167MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: 165-LBGA	在庫4,848	SRAM	SRAM - Synchronous, QDR II	72Mb (2M x 36)	Parallel	167MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
AT93C46A-10TU-2.7-T	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8 , 64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫7,856	EEPROM	EEPROM	1Kb (128 x 8 , 64 x 16)	SPI	2MHz	10ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AT49LV002NT-90PC	Microchip Technology	IC FLASH 2MBIT 90NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	パッケージ: 32-DIP (0.600", 15.24mm)	在庫2,560	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	90ns	3 V ~ 3.6 V	0°C ~ 70°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
AT49F1025-55VI	Microchip Technology	IC FLASH 1MBIT 55NS 40VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 40-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 40-VSOP	パッケージ: 40-TFSOP (0.488", 12.40mm Width)	在庫5,616	FLASH	FLASH	1Mb (64K x 16)	Parallel	-	50µs	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	40-TFSOP (0.488", 12.40mm Width)	40-VSOP
AT24C04A-10PI-1.8	Microchip Technology	IC EEPROM 4KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫2,880	EEPROM	EEPROM	4Kb (512 x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IS65WV12816BLL-55TLA3	ISSI, Integrated Silicon Solution Inc	IC SRAM 2MBIT 55NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫7,728	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	55ns	55ns	2.5 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
MR256A08BYS35R	Everspin Technologies Inc.	IC MRAM 256KBIT 35NS 44TSOP Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫7,808	RAM	MRAM (Magnetoresistive RAM)	256Kb (32K x 8)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP2
24AA024H-I/SN	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫6,720	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
M95020-RMC6TG	STMicroelectronics	IC EEPROM 2KBIT 5MHZ 8UFDFPN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UFDFPN (2x3)	パッケージ: 8-UFDFN Exposed Pad	在庫5,472	EEPROM	EEPROM	2Kb (256 x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UFDFPN (2x3)
M93C46-WMN6P	STMicroelectronics	IC EEPROM 1KBIT 2MHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8, 64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫110,364	EEPROM	EEPROM	1Kb (128 x 8, 64 x 16)	SPI	2MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MX25V4006EM1I-13G	Macronix	IC FLASH 4MBIT 75MHZ 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: - Voltage - Supply: 2.35 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫27,954	FLASH	FLASH - NOR	4Mb (512K x 8)	SPI	75MHz	50µs, 1ms	-	2.35 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AS7C34096B-10TINTR	Alliance Memory, Inc.	IC SRAM 4M PARALLEL 48TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫7,840	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
S29WS128N0LBFW012	Cypress Semiconductor Corp	IC MEMORY NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,496	-	-	-	-	-	-	-	-	-	-	-	-
MTFC16GAKAEEF-AAT TR	Micron Technology Inc.	IC FLASH 128G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,288	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	-	-40°C ~ 105°C (TA)	-	-	-
AS5F32G04SND-08LIN	Alliance Memory, Inc.	IC FLASH 2GBIT SPI/QUAD 8LGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: SPI - Quad I/O Clock Frequency: 120 MHz Write Cycle Time - Word, Page: 700µs Access Time: - Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WLGA Supplier Device Package: 8-LGA (8x6)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	SPI - Quad I/O	120 MHz	700µs	-	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WLGA	8-LGA (8x6)
BY25Q64ESHIG-R	BYTe Semiconductor	64 MBIT, 3.0V (2.7V TO 3.6V), -4 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 64Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 120 MHz Write Cycle Time - Word, Page: 50µs, 2.4ms Access Time: 11.5 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-XDFN Exposed Pad Supplier Device Package: 8-USON (4x3)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	64Mbit	SPI - Quad I/O	120 MHz	50µs, 2.4ms	11.5 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-XDFN Exposed Pad	8-USON (4x3)
MT62F2G32D4DS-026-AAT-B-TR	Micron Technology Inc.	LPDDR5 64GBIT 32 315/315 TFBGA 4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	Parallel	3.2 GHz	-	-	1.05V	-40°C ~ 105°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
CY7C1370B-200BGC	Cypress Semiconductor Corp	IC SRAM 18MBIT PARALLEL 119PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 3 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	パッケージ: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	18Mbit	Parallel	200 MHz	-	3 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
MB85RS1MTPNF-G-AWERE2	Fujitsu Semiconductor Memory Solution	1MBIT FRAM WITH SPI SERIAL INTER Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 1Mbit Memory Interface: SPI Clock Frequency: 40 MHz Write Cycle Time - Word, Page: - Access Time: 9 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: -	在庫4,500	FRAM	FRAM (Ferroelectric RAM)	1Mbit	SPI	40 MHz	-	9 ns	1.8V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NDL86PFG-9MET-TR	Insignis Technology Corporation	DDR3L 8GB X16 FBGA 9X13(X1.2) 18 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x13)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3L	8Gbit	Parallel	933 MHz	-	-	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x13)
W631GU6NB15I	Winbond Electronics	IC DRAM 1GBIT PAR 96VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 667 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V, 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (7.5x13)	パッケージ: -	在庫564	DRAM	SDRAM - DDR3L	1Gbit	Parallel	667 MHz	15ns	20 ns	1.283V ~ 1.45V, 1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (7.5x13)
W9816G6JB-7I-TR	Winbond Electronics	IC DRAM 16MBIT LVTTL 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-VFBGA (6.4x10.1)	パッケージ: -	Request a Quote	DRAM	SDRAM	16Mbit	LVTTL	143 MHz	-	5 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-VFBGA (6.4x10.1)
S29AL008D70TFI020	Spansion	FLASH NOR 8MB 3V TSOP (BTM BT-BL Memory Type: Non-Volatile Memory Format: FLASH Technology: - Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	パッケージ: -	Request a Quote	FLASH	-	8Mbit	Parallel	-	70ns	-	2.7V ~ 3.6V	-40°C ~ 85°C	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
IS25LP512MG-RMLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 512MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: 5.5 ns Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	パッケージ: -	Request a Quote	FLASH	FLASH - NOR	512Mbit	SPI - Quad I/O, QPI, DTR	166 MHz	50µs, 1ms	5.5 ns	2.3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
AF128GEC5X-2001EX	ATP Electronics, Inc.	IC FLASH 1TBIT EMMC 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 1Tbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 153-FBGA Supplier Device Package: 153-BGA (11.5x13)	パッケージ: -	在庫12	FLASH	FLASH - NAND (MLC)	1Tbit	eMMC	-	-	-	-	-40°C ~ 105°C	Surface Mount	153-FBGA	153-BGA (11.5x13)

IS42RM32800D-75TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫6,800

DRAM

SDRAM - Mobile

256Mb (8M x 32)

Parallel

133MHz

-

5.4ns

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

MT29F256G08CJAAAWP-IT:A TR

Micron Technology Inc.

IC FLASH 256GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,312

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

IS45S16160D-7BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x13)

パッケージ: 54-TFBGA

在庫2,992

DRAM

SDRAM

256Mb (16M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x13)

CY7C1515SV18-167BZC

Cypress Semiconductor Corp

IC SRAM 72MBIT 167MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: 165-LBGA

在庫4,848

SRAM

SRAM - Synchronous, QDR II

72Mb (2M x 36)

Parallel

167MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

AT93C46A-10TU-2.7-T

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8 , 64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫7,856

EEPROM

1Kb (128 x 8 , 64 x 16)

SPI

2MHz

10ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AT49LV002NT-90PC

Microchip Technology

IC FLASH 2MBIT 90NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

パッケージ: 32-DIP (0.600", 15.24mm)

在庫2,560

FLASH

2Mb (256K x 8)

Parallel

-

50µs

90ns

3 V ~ 3.6 V

0°C ~ 70°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

AT49F1025-55VI

Microchip Technology

IC FLASH 1MBIT 55NS 40VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 40-VSOP

パッケージ: 40-TFSOP (0.488", 12.40mm Width)

在庫5,616

FLASH

1Mb (64K x 16)

Parallel

-

50µs

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

40-TFSOP (0.488", 12.40mm Width)

40-VSOP

AT24C04A-10PI-1.8

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫2,880

EEPROM

4Kb (512 x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IS65WV12816BLL-55TLA3

ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 55NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫7,728

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

55ns

2.5 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

MR256A08BYS35R

Everspin Technologies Inc.

IC MRAM 256KBIT 35NS 44TSOP

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫7,808

RAM

MRAM (Magnetoresistive RAM)

256Kb (32K x 8)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP2

24AA024H-I/SN

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫6,720

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

M95020-RMC6TG

STMicroelectronics

IC EEPROM 2KBIT 5MHZ 8UFDFPN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UFDFPN (2x3)

パッケージ: 8-UFDFN Exposed Pad

在庫5,472

EEPROM

2Kb (256 x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UFDFPN (2x3)

M93C46-WMN6P

STMicroelectronics

IC EEPROM 1KBIT 2MHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8, 64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫110,364

EEPROM

1Kb (128 x 8, 64 x 16)

SPI

2MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MX25V4006EM1I-13G

Macronix

IC FLASH 4MBIT 75MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: -
Voltage - Supply: 2.35 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫27,954

FLASH

FLASH - NOR

4Mb (512K x 8)

SPI

75MHz

50µs, 1ms

-

2.35 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AS7C34096B-10TINTR

Alliance Memory, Inc.

IC SRAM 4M PARALLEL 48TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫7,840

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

S29WS128N0LBFW012

Cypress Semiconductor Corp

IC MEMORY NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,496

-

MTFC16GAKAEEF-AAT TR

Micron Technology Inc.

IC FLASH 128G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,288

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

-40°C ~ 105°C (TA)

-

AS5F32G04SND-08LIN

Alliance Memory, Inc.

IC FLASH 2GBIT SPI/QUAD 8LGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 120 MHz
Write Cycle Time - Word, Page: 700µs
Access Time: -
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WLGA
Supplier Device Package: 8-LGA (8x6)

パッケージ: -

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FLASH

FLASH - NAND (SLC)

2Gbit

SPI - Quad I/O

120 MHz

700µs

-

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WLGA

8-LGA (8x6)

BY25Q64ESHIG-R

BYTe Semiconductor

64 MBIT, 3.0V (2.7V TO 3.6V), -4

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 120 MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Access Time: 11.5 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XDFN Exposed Pad
Supplier Device Package: 8-USON (4x3)

パッケージ: -

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FLASH

FLASH - NOR (SLC)

64Mbit

SPI - Quad I/O

120 MHz

50µs, 2.4ms

11.5 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-XDFN Exposed Pad

8-USON (4x3)

MT62F2G32D4DS-026-AAT-B-TR

Micron Technology Inc.

LPDDR5 64GBIT 32 315/315 TFBGA 4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR5

64Gbit

Parallel

3.2 GHz

-

1.05V

-40°C ~ 105°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

CY7C1370B-200BGC

Cypress Semiconductor Corp

IC SRAM 18MBIT PARALLEL 119PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 3 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

パッケージ: -

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SRAM

SRAM - Synchronous, SDR

18Mbit

Parallel

200 MHz

-

3 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

MB85RS1MTPNF-G-AWERE2

Fujitsu Semiconductor Memory Solution

1MBIT FRAM WITH SPI SERIAL INTER

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 1Mbit
Memory Interface: SPI
Clock Frequency: 40 MHz
Write Cycle Time - Word, Page: -
Access Time: 9 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: -

在庫4,500

FRAM

FRAM (Ferroelectric RAM)

1Mbit

SPI

40 MHz

-

9 ns

1.8V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NDL86PFG-9MET-TR

Insignis Technology Corporation

DDR3L 8GB X16 FBGA 9X13(X1.2) 18

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x13)

パッケージ: -

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DRAM

SDRAM - DDR3L

8Gbit

Parallel

933 MHz

-

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x13)

W631GU6NB15I

Winbond Electronics

IC DRAM 1GBIT PAR 96VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 667 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V, 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)

パッケージ: -

在庫564

DRAM

SDRAM - DDR3L

1Gbit

Parallel

667 MHz

15ns

20 ns

1.283V ~ 1.45V, 1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (7.5x13)

W9816G6JB-7I-TR

Winbond Electronics

IC DRAM 16MBIT LVTTL 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-VFBGA (6.4x10.1)

パッケージ: -

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DRAM

SDRAM

16Mbit

LVTTL

143 MHz

-

5 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-VFBGA (6.4x10.1)

S29AL008D70TFI020

Spansion

FLASH NOR 8MB 3V TSOP (BTM BT-BL

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: -
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

パッケージ: -

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FLASH

-

8Mbit

Parallel

-

70ns

-

2.7V ~ 3.6V

-40°C ~ 85°C

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

IS25LP512MG-RMLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 512MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: 5.5 ns
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

パッケージ: -

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FLASH

FLASH - NOR

512Mbit

SPI - Quad I/O, QPI, DTR

166 MHz

50µs, 1ms

5.5 ns

2.3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

AF128GEC5X-2001EX

ATP Electronics, Inc.

IC FLASH 1TBIT EMMC 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 1Tbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 153-FBGA
Supplier Device Package: 153-BGA (11.5x13)

パッケージ: -

在庫12

FLASH

FLASH - NAND (MLC)

1Tbit

eMMC

-

-40°C ~ 105°C

Surface Mount

153-FBGA

153-BGA (11.5x13)