ページ 140 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT49H32M18FM-25E:B TR	Micron Technology Inc.	IC RLDRAM 576MBIT 400MHZ 144UBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 15ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-µBGA (18.5x11)	パッケージ: 144-TFBGA	在庫3,776	DRAM	DRAM	576Mb (32M x 18)	Parallel	400MHz	-	15ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-µBGA (18.5x11)
IDT71124S12YGI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 12NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	パッケージ: 32-BSOJ (0.400", 10.16mm Width)	在庫6,432	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
IDT6116SA25SOI8	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 25NS 24SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Supplier Device Package: 24-SOIC	パッケージ: 24-SOIC (0.295", 7.50mm Width)	在庫6,336	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	24-SOIC (0.295", 7.50mm Width)	24-SOIC
AT27C4096-90JC	Microchip Technology	IC OTP 4MBIT 90NS 44PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 44-LCC (J-Lead) Supplier Device Package: 44-PLCC (16.59x16.59)	パッケージ: 44-LCC (J-Lead)	在庫4,960	EPROM	EPROM - OTP	4Mb (256K x 16)	Parallel	-	-	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	44-LCC (J-Lead)	44-PLCC (16.59x16.59)
AT25080N-10SI	Microchip Technology	IC EEPROM 8KBIT 3MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫5,216	EEPROM	EEPROM	8Kb (1K x 8)	SPI	3MHz	5ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY7C1062G30-10BGXIT	Cypress Semiconductor Corp	IC SRAM 16MBIT 10NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (512K x 32) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	パッケージ: 119-BGA	在庫5,472	SRAM	SRAM - Asynchronous	16Mb (512K x 32)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
7142LA25JI8	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 25NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	パッケージ: 52-LCC (J-Lead)	在庫2,784	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
71V65903S85PFG8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 8.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	パッケージ: 100-LQFP	在庫5,520	SRAM	SRAM - Synchronous ZBT	9Mb (512K x 18)	Parallel	-	-	8.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
71V3559S75BQ8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 7.5NS 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	パッケージ: 165-TBGA	在庫7,440	SRAM	SRAM - Synchronous ZBT	4.5Mb (256K x 18)	Parallel	-	-	7.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
AS7C4096A-15TINTR	Alliance Memory, Inc.	IC SRAM 4MBIT 15NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫6,880	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS61WV3216DBLL-10TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 512KBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫7,616	SRAM	SRAM - Asynchronous	512Kb (32K x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP2
IS63WV1024BLL-12BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 1MBIT 12NS 48MINIBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-miniBGA (6x8)	パッケージ: 48-TFBGA	在庫5,808	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-miniBGA (6x8)
24AA256T-E/ST	Microchip Technology	IC EEPROM 256KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫7,488	EEPROM	EEPROM	256Kb (32K x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
24LC02BH-I/ST	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫2,992	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY7C1470BV33-200AXC	Cypress Semiconductor Corp	IC SRAM 72MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	パッケージ: 100-LQFP	在庫3,776	SRAM	SRAM - Synchronous	72Mb (2M x 36)	Parallel	200MHz	-	3ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
MT28EW256ABA1LJS-0SIT	Micron Technology Inc.	IC FLASH 256MBIT 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 95ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	パッケージ: 56-TFSOP (0.724", 18.40mm Width)	在庫14,040	FLASH	FLASH - NOR	256Mb (32M x 8, 16M x 16)	Parallel	-	60ns	95ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
MTFC4GLMDQ-AIT Z	Micron Technology Inc.	IC FLASH 32G MMC LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,792	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-
93C46B-I/W15K	Microchip Technology	IC EEPROM 1K SPI 2MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫6,688	EEPROM	EEPROM	1Kb (64 x 16)	SPI	2MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
BR93G76F-3BGTE2	Rohm Semiconductor	MICROWIRE BUS 8KBIT(512X16BIT) E Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (512 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.173", 4.40mm Width)	在庫25,296	EEPROM	EEPROM	8Kb (512 x 16)	SPI	3MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
S29JL032J60TFI210	Cypress Semiconductor Corp	IC FLASH 32M PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 60ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP (18.4x12)	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫7,936	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	60ns	60ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP (18.4x12)
IS25WP016D-JKLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 16M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	パッケージ: 8-WDFN Exposed Pad	在庫4,432	FLASH	FLASH - NOR	16Mb (2M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
IS61VPS51236A-200B3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	パッケージ: 165-TBGA	在庫4,384	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	200MHz	-	3.1ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
CAT34C02HU4IGT4U5	onsemi	IC EEPROM 2KBIT I2C 400KHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: I2C Clock Frequency: 400 kHz Write Cycle Time - Word, Page: 5ms Access Time: 900 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	パッケージ: -	在庫12,000	EEPROM	EEPROM	2Kbit	I2C	400 kHz	5ms	900 ns	1.7V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
IS25WP01G-RILE-TR	ISSI, Integrated Silicon Solution Inc	1Gb QPI/QSPI, 24-ball LFBGA 6x8m Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: 10 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-LBGA Supplier Device Package: 24-LFBGA (6x8)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI, DTR	104 MHz	50µs, 1ms	10 ns	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	24-LBGA	24-LFBGA (6x8)
27C512-75DC	Rochester Electronics, LLC	IC EPROM 512KBIT PARALLEL 32CDIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 75 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-CDIP (0.600", 15.24mm) Supplier Device Package: 32-CDIP	パッケージ: -	Request a Quote	EPROM	EPROM - OTP	512Kbit	Parallel	-	-	75 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Through Hole	32-CDIP (0.600", 15.24mm)	32-CDIP
SM662PXF-BESS-1	Silicon Motion, Inc.	IC FLASH 960GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 960Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (SLC)	960Gbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
CY15B128J-SXET	Infineon Technologies	FRAM Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 128Kbit Memory Interface: I2C Clock Frequency: 3.4 MHz Write Cycle Time - Word, Page: - Access Time: 130 ns Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	128Kbit	I2C	3.4 MHz	-	130 ns	2V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT53E768M64D4HJ-046-WT-C-TR	Micron Technology Inc.	LPDDR4 48GBIT 64 556/841 TFBGA 4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

MT49H32M18FM-25E:B TR

Micron Technology Inc.

IC RLDRAM 576MBIT 400MHZ 144UBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 15ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-µBGA (18.5x11)

パッケージ: 144-TFBGA

在庫3,776

DRAM

576Mb (32M x 18)

Parallel

400MHz

-

15ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-µBGA (18.5x11)

IDT71124S12YGI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

パッケージ: 32-BSOJ (0.400", 10.16mm Width)

在庫6,432

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

12ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

IDT6116SA25SOI8

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 24SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC

パッケージ: 24-SOIC (0.295", 7.50mm Width)

在庫6,336

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

24-SOIC (0.295", 7.50mm Width)

24-SOIC

AT27C4096-90JC

Microchip Technology

IC OTP 4MBIT 90NS 44PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Supplier Device Package: 44-PLCC (16.59x16.59)

パッケージ: 44-LCC (J-Lead)

在庫4,960

EPROM

EPROM - OTP

4Mb (256K x 16)

Parallel

-

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

44-LCC (J-Lead)

44-PLCC (16.59x16.59)

AT25080N-10SI

Microchip Technology

IC EEPROM 8KBIT 3MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫5,216

EEPROM

8Kb (1K x 8)

SPI

3MHz

5ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY7C1062G30-10BGXIT

Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (512K x 32)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

パッケージ: 119-BGA

在庫5,472

SRAM

SRAM - Asynchronous

16Mb (512K x 32)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

7142LA25JI8

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

パッケージ: 52-LCC (J-Lead)

在庫2,784

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

71V65903S85PFG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

パッケージ: 100-LQFP

在庫5,520

SRAM

SRAM - Synchronous ZBT

9Mb (512K x 18)

Parallel

-

8.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

71V3559S75BQ8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 7.5NS 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

パッケージ: 165-TBGA

在庫7,440

SRAM

SRAM - Synchronous ZBT

4.5Mb (256K x 18)

Parallel

-

7.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

AS7C4096A-15TINTR

Alliance Memory, Inc.

IC SRAM 4MBIT 15NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫6,880

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

15ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS61WV3216DBLL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 512KBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫7,616

SRAM

SRAM - Asynchronous

512Kb (32K x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP2

IS63WV1024BLL-12BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 48MINIBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (6x8)

パッケージ: 48-TFBGA

在庫5,808

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-miniBGA (6x8)

24AA256T-E/ST

Microchip Technology

IC EEPROM 256KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫7,488

EEPROM

256Kb (32K x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

24LC02BH-I/ST

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫2,992

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY7C1470BV33-200AXC

Cypress Semiconductor Corp

IC SRAM 72MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

パッケージ: 100-LQFP

在庫3,776

SRAM

SRAM - Synchronous

72Mb (2M x 36)

Parallel

200MHz

-

3ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

MT28EW256ABA1LJS-0SIT

Micron Technology Inc.

IC FLASH 256MBIT 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8, 16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 95ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

パッケージ: 56-TFSOP (0.724", 18.40mm Width)

在庫14,040

FLASH

FLASH - NOR

256Mb (32M x 8, 16M x 16)

Parallel

-

60ns

95ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

MTFC4GLMDQ-AIT Z

Micron Technology Inc.

IC FLASH 32G MMC LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,792

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

-40°C ~ 85°C (TA)

-

93C46B-I/W15K

Microchip Technology

IC EEPROM 1K SPI 2MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: Die

在庫6,688

EEPROM

1Kb (64 x 16)

SPI

2MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

BR93G76F-3BGTE2

Rohm Semiconductor

MICROWIRE BUS 8KBIT(512X16BIT) E

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (512 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.173", 4.40mm Width)

在庫25,296

EEPROM

8Kb (512 x 16)

SPI

3MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

S29JL032J60TFI210

Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP (18.4x12)

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫7,936

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

60ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP (18.4x12)

IS25WP016D-JKLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 16M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

パッケージ: 8-WDFN Exposed Pad

在庫4,432

FLASH

FLASH - NOR

16Mb (2M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

IS61VPS51236A-200B3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

パッケージ: 165-TBGA

在庫4,384

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

200MHz

-

3.1ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

CAT34C02HU4IGT4U5

onsemi

IC EEPROM 2KBIT I2C 400KHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: I2C
Clock Frequency: 400 kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

パッケージ: -

在庫12,000

EEPROM

2Kbit

I2C

400 kHz

5ms

900 ns

1.7V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

IS25WP01G-RILE-TR

ISSI, Integrated Silicon Solution Inc

1Gb QPI/QSPI, 24-ball LFBGA 6x8m

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: 10 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-LBGA
Supplier Device Package: 24-LFBGA (6x8)

パッケージ: -

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FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI, DTR

104 MHz

50µs, 1ms

10 ns

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

24-LBGA

24-LFBGA (6x8)

27C512-75DC

Rochester Electronics, LLC

IC EPROM 512KBIT PARALLEL 32CDIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 75 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-CDIP (0.600", 15.24mm)
Supplier Device Package: 32-CDIP

パッケージ: -

Request a Quote

EPROM

EPROM - OTP

512Kbit

Parallel

-

75 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Through Hole

32-CDIP (0.600", 15.24mm)

32-CDIP

SM662PXF-BESS-1

Silicon Motion, Inc.

IC FLASH 960GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 960Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

パッケージ: -

Request a Quote

FLASH

FLASH - NAND (SLC)

960Gbit

eMMC

-

-25°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

CY15B128J-SXET

Infineon Technologies

FRAM

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 128Kbit
Memory Interface: I2C
Clock Frequency: 3.4 MHz
Write Cycle Time - Word, Page: -
Access Time: 130 ns
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

128Kbit

I2C

3.4 MHz

-

130 ns

2V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT53E768M64D4HJ-046-WT-C-TR

Micron Technology Inc.

LPDDR4 48GBIT 64 556/841 TFBGA 4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-