ページ 1491 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PF48F4400P0VBQE3	Micron Technology Inc.	IC FLASH 512MBIT 100NS 88SCSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 88-TFBGA, CSPBGA Supplier Device Package: 88-SCSP (11x8)	パッケージ: 88-TFBGA, CSPBGA	在庫6,896	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	52MHz	100ns	100ns	1.7 V ~ 2 V	-40°C ~ 85°C (TC)	Surface Mount	88-TFBGA, CSPBGA	88-SCSP (11x8)
AT24C256BN-SH-B	Microchip Technology	IC EEPROM 256KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫6,000	EEPROM	EEPROM	256Kb (32K x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
M25P20-VMP6TG TR	Micron Technology Inc.	IC FLASH 2MBIT 50MHZ 8VFDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 50MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VFQFPN (6x5)	パッケージ: 8-VDFN Exposed Pad	在庫6,128	FLASH	FLASH - NOR	2Mb (256K x 8)	SPI	50MHz	15ms, 5ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-VFQFPN (6x5)
AT49F2048A-70TC	Microchip Technology	IC FLASH 2MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8, 128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫8,712	FLASH	FLASH	2Mb (256K x 8, 128K x 16)	Parallel	-	50µs	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
AT24C64-10TI-1.8	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫7,520	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	10ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AT28HC64B-70PC	Microchip Technology	IC EEPROM 64KBIT 70NS 28DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	パッケージ: 28-DIP (0.600", 15.24mm)	在庫3,712	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	10ms	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
AT28HC256-90JC	Microchip Technology	IC EEPROM 256KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	パッケージ: 32-LCC (J-Lead)	在庫9,672	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT24C128N-10SI	Microchip Technology	IC EEPROM 128KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 10ms Access Time: 550ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫4,608	EEPROM	EEPROM	128Kb (16K x 8)	I2C	1MHz	10ms	550ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT28C256F-15UM/883	Microchip Technology	IC EEPROM 256KBIT 150NS 28CPGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 3ms Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Through Hole Package / Case: 28-BCPGA Supplier Device Package: 28-CPGA (13.55x15.06)	パッケージ: 28-BCPGA	在庫2,912	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	3ms	150ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TC)	Through Hole	28-BCPGA	28-CPGA (13.55x15.06)
MR2A16AMYS35R	Everspin Technologies Inc.	IC MRAM 4MBIT 35NS 44TSOP Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫4,272	RAM	MRAM (Magnetoresistive RAM)	4Mb (256K x 16)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP2
MT41J64M16TW-093:J TR	Micron Technology Inc.	IC SDRAM 1GBIT 1067MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	パッケージ: 96-TFBGA	在庫4,528	DRAM	SDRAM - DDR3	1Gb (64M x 16)	Parallel	1067MHz	-	-	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
S29GL064S70BHA043	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,272	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	60ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
S27KS0641DPBHV023	Cypress Semiconductor Corp	IC DRAM 64MBIT 1.8V 166MHZ 24BGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 64Mb (8M x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 40ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	パッケージ: 24-TBGA	在庫6,288	DRAM	DRAM	64Mb (8M x 8)	Parallel	166MHz	-	40ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
93C66AT-I/ST	Microchip Technology	IC EEPROM 4KBIT 2MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫2,720	EEPROM	EEPROM	4Kb (512 x 8)	SPI	2MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
93C66C-I/ST	Microchip Technology	IC EEPROM 4KBIT 3MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8, 256 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫2,976	EEPROM	EEPROM	4Kb (512 x 8, 256 x 16)	SPI	3MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DS24L65P+	Maxim Integrated	IC EEPROM 64BIT 1WIRE 6TSOC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512b (32 Bytes x 2 pages) Memory Interface: 1-Wire? Clock Frequency: 400kHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-LSOJ (0.148", 3.76mm Width) Supplier Device Package: 6-TSOC	パッケージ: 6-LSOJ (0.148", 3.76mm Width)	在庫19,680	EEPROM	EEPROM	512b (32 Bytes x 2 pages)	1-Wire?	400kHz	-	-	1.71 V ~ 1.89 V	-40°C ~ 85°C (TA)	Surface Mount	6-LSOJ (0.148", 3.76mm Width)	6-TSOC
BR24L01AFV-WE2	Rohm Semiconductor	IC EEPROM 1KBIT 400KHZ 8SSOPB Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-SSOPB	パッケージ: 8-LSSOP (0.173", 4.40mm Width)	在庫55,992	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-LSSOP (0.173", 4.40mm Width)	8-SSOPB
AS4C64M8D3-12BIN	Alliance Memory, Inc.	IC DRAM 512M PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TA) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (8x10.5)	パッケージ: 78-VFBGA	在庫6,800	DRAM	SDRAM - DDR3	512Mb (64M x 8)	Parallel	800MHz	-	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TA)	Surface Mount	78-VFBGA	78-FBGA (8x10.5)
IS49NLS18320A-25WBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	パッケージ: 144-TBGA	在庫6,576	DRAM	DRAM	576Mb (32M x 18)	Parallel	400MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
S34ML04G100TFA003	Cypress Semiconductor Corp	IC FLASH 4G PARALLEL 48TSOP I Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫6,624	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	25ns	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
S29JL032J70TFI413	Cypress Semiconductor Corp	IC FLASH 32M PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫7,488	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
MT41K256M16TW-107 AT:P TR	Micron Technology Inc.	MEMORY DRAM Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	パッケージ: 96-TFBGA	在庫5,040	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
N25Q128A13ESFH0E TR	Micron Technology Inc.	IC FLASH 128M SPI 108MHZ 16SOP2 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (32M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	パッケージ: 16-SOIC (0.295", 7.50mm Width)	在庫7,568	FLASH	FLASH - NOR	128Mb (32M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
EM-10 8GB I-GRADE	Swissbit	IND EMBEDDED MMC EM-10 8 GB MLC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 8GB Memory Interface: eMMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-BGA (11.5x13)	パッケージ: 153-VFBGA	在庫2,656	FLASH	FLASH - NAND (MLC)	8GB	eMMC	52MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C	Surface Mount	153-VFBGA	153-BGA (11.5x13)
IS26KS256S-DPBLA100	Infineon Technologies	INFINEON Memory Type: Non-Volatile Memory Format: FLASH Technology: HyperFlash Memory Size: 256Mbit Memory Interface: HyperBus Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 96 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-VFBGA (6x8)	パッケージ: -	Request a Quote	FLASH	HyperFlash	256Mbit	HyperBus	166 MHz	-	96 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-VFBGA (6x8)
NLQ46PFS-8NIT	Insignis Technology Corporation	LPDDR4 4GB X16 2400MHZ CL16 10X1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gbit Memory Interface: LVSTL Clock Frequency: 1.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-FBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	4Gbit	LVSTL	1.2 GHz	-	-	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	200-WFBGA	200-FBGA (10x14.5)
LE25S161CA-Z1	onsemi	IC FLASH 16MBIT SPI 70MHZ 8VSOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mbit Memory Interface: SPI Clock Frequency: 70 MHz Write Cycle Time - Word, Page: 700µs Access Time: 8 ns Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 90°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-VSOIC	パッケージ: -	Request a Quote	FLASH	FLASH	16Mbit	SPI	70 MHz	700µs	8 ns	1.65V ~ 1.95V	-40°C ~ 90°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-VSOIC
W66BQ6NBHAHJ	Winbond Electronics	2GB LPDDR4X, X16, 2133MHZ, -40C~ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 2Gbit Memory Interface: LVSTL_06 Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.6 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 100-VFBGA Supplier Device Package: 100-VFBGA (10x7.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	2Gbit	LVSTL_06	2.133 GHz	18ns	3.6 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	100-VFBGA	100-VFBGA (10x7.5)
AS7C34098A-8TAN	Alliance Memory, Inc.	MEMORY Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 8ns Access Time: 8 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	8ns	8 ns	3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
SM662GXD-BEST-1	Silicon Motion, Inc.	IC FLASH 1TBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)

PF48F4400P0VBQE3

Micron Technology Inc.

IC FLASH 512MBIT 100NS 88SCSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 88-TFBGA, CSPBGA
Supplier Device Package: 88-SCSP (11x8)

パッケージ: 88-TFBGA, CSPBGA

在庫6,896

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

52MHz

100ns

1.7 V ~ 2 V

-40°C ~ 85°C (TC)

Surface Mount

88-TFBGA, CSPBGA

88-SCSP (11x8)

AT24C256BN-SH-B

Microchip Technology

IC EEPROM 256KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫6,000

EEPROM

256Kb (32K x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

M25P20-VMP6TG TR

Micron Technology Inc.

IC FLASH 2MBIT 50MHZ 8VFDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VFQFPN (6x5)

パッケージ: 8-VDFN Exposed Pad

在庫6,128

FLASH

FLASH - NOR

2Mb (256K x 8)

SPI

50MHz

15ms, 5ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-VFQFPN (6x5)

AT49F2048A-70TC

Microchip Technology

IC FLASH 2MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8, 128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫8,712

FLASH

2Mb (256K x 8, 128K x 16)

Parallel

-

50µs

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

AT24C64-10TI-1.8

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫7,520

EEPROM

64Kb (8K x 8)

I2C

400kHz

10ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AT28HC64B-70PC

Microchip Technology

IC EEPROM 64KBIT 70NS 28DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

パッケージ: 28-DIP (0.600", 15.24mm)

在庫3,712

EEPROM

64Kb (8K x 8)

Parallel

-

10ms

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

AT28HC256-90JC

Microchip Technology

IC EEPROM 256KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

パッケージ: 32-LCC (J-Lead)

在庫9,672

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT24C128N-10SI

Microchip Technology

IC EEPROM 128KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 10ms
Access Time: 550ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫4,608

EEPROM

128Kb (16K x 8)

I2C

1MHz

10ms

550ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT28C256F-15UM/883

Microchip Technology

IC EEPROM 256KBIT 150NS 28CPGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 3ms
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Through Hole
Package / Case: 28-BCPGA
Supplier Device Package: 28-CPGA (13.55x15.06)

パッケージ: 28-BCPGA

在庫2,912

EEPROM

256Kb (32K x 8)

Parallel

-

3ms

150ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TC)

Through Hole

28-BCPGA

28-CPGA (13.55x15.06)

MR2A16AMYS35R

Everspin Technologies Inc.

IC MRAM 4MBIT 35NS 44TSOP

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫4,272

RAM

MRAM (Magnetoresistive RAM)

4Mb (256K x 16)

Parallel

-

35ns

3 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP2

MT41J64M16TW-093:J TR

Micron Technology Inc.

IC SDRAM 1GBIT 1067MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

パッケージ: 96-TFBGA

在庫4,528

DRAM

SDRAM - DDR3

1Gb (64M x 16)

Parallel

1067MHz

-

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

S29GL064S70BHA043

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,272

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

60ns

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

S27KS0641DPBHV023

Cypress Semiconductor Corp

IC DRAM 64MBIT 1.8V 166MHZ 24BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 64Mb (8M x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 40ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

パッケージ: 24-TBGA

在庫6,288

DRAM

64Mb (8M x 8)

Parallel

166MHz

-

40ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

93C66AT-I/ST

Microchip Technology

IC EEPROM 4KBIT 2MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫2,720

EEPROM

4Kb (512 x 8)

SPI

2MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

93C66C-I/ST

Microchip Technology

IC EEPROM 4KBIT 3MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8, 256 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫2,976

EEPROM

4Kb (512 x 8, 256 x 16)

SPI

3MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

DS24L65P+

Maxim Integrated

IC EEPROM 64BIT 1WIRE 6TSOC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512b (32 Bytes x 2 pages)
Memory Interface: 1-Wire?
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-LSOJ (0.148", 3.76mm Width)
Supplier Device Package: 6-TSOC

パッケージ: 6-LSOJ (0.148", 3.76mm Width)

在庫19,680

EEPROM

512b (32 Bytes x 2 pages)

1-Wire?

400kHz

-

1.71 V ~ 1.89 V

-40°C ~ 85°C (TA)

Surface Mount

6-LSOJ (0.148", 3.76mm Width)

6-TSOC

BR24L01AFV-WE2

Rohm Semiconductor

IC EEPROM 1KBIT 400KHZ 8SSOPB

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-SSOPB

パッケージ: 8-LSSOP (0.173", 4.40mm Width)

在庫55,992

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-LSSOP (0.173", 4.40mm Width)

8-SSOPB

AS4C64M8D3-12BIN

Alliance Memory, Inc.

IC DRAM 512M PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TA)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (8x10.5)

パッケージ: 78-VFBGA

在庫6,800

DRAM

SDRAM - DDR3

512Mb (64M x 8)

Parallel

800MHz

-

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TA)

Surface Mount

78-VFBGA

78-FBGA (8x10.5)

IS49NLS18320A-25WBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

パッケージ: 144-TBGA

在庫6,576

DRAM

576Mb (32M x 18)

Parallel

400MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

S34ML04G100TFA003

Cypress Semiconductor Corp

IC FLASH 4G PARALLEL 48TSOP I

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫6,624

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

25ns

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

S29JL032J70TFI413

Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫7,488

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

MT41K256M16TW-107 AT:P TR

Micron Technology Inc.

MEMORY DRAM

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

パッケージ: 96-TFBGA

在庫5,040

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

N25Q128A13ESFH0E TR

Micron Technology Inc.

IC FLASH 128M SPI 108MHZ 16SOP2

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

パッケージ: 16-SOIC (0.295", 7.50mm Width)

在庫7,568

FLASH

FLASH - NOR

128Mb (32M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

EM-10 8GB I-GRADE

Swissbit

IND EMBEDDED MMC EM-10 8 GB MLC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 8GB
Memory Interface: eMMC
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-BGA (11.5x13)

パッケージ: 153-VFBGA

在庫2,656

FLASH

FLASH - NAND (MLC)

8GB

eMMC

52MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C

Surface Mount

153-VFBGA

153-BGA (11.5x13)

IS26KS256S-DPBLA100

Infineon Technologies

INFINEON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: HyperFlash
Memory Size: 256Mbit
Memory Interface: HyperBus
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 96 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-VFBGA (6x8)

パッケージ: -

Request a Quote

FLASH

HyperFlash

256Mbit

HyperBus

166 MHz

-

96 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-VFBGA (6x8)

NLQ46PFS-8NIT

Insignis Technology Corporation

LPDDR4 4GB X16 2400MHZ CL16 10X1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gbit
Memory Interface: LVSTL
Clock Frequency: 1.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-FBGA (10x14.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

4Gbit

LVSTL

1.2 GHz

-

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

200-WFBGA

200-FBGA (10x14.5)

LE25S161CA-Z1

onsemi

IC FLASH 16MBIT SPI 70MHZ 8VSOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mbit
Memory Interface: SPI
Clock Frequency: 70 MHz
Write Cycle Time - Word, Page: 700µs
Access Time: 8 ns
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 90°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-VSOIC

パッケージ: -

Request a Quote

FLASH

16Mbit

SPI

70 MHz

700µs

8 ns

1.65V ~ 1.95V

-40°C ~ 90°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-VSOIC

W66BQ6NBHAHJ

Winbond Electronics

2GB LPDDR4X, X16, 2133MHZ, -40C~

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 2Gbit
Memory Interface: LVSTL_06
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.6 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Supplier Device Package: 100-VFBGA (10x7.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

2Gbit

LVSTL_06

2.133 GHz

18ns

3.6 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

100-VFBGA

100-VFBGA (10x7.5)

AS7C34098A-8TAN

Alliance Memory, Inc.

MEMORY

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 8ns
Access Time: 8 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: -

Request a Quote

SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

8ns

8 ns

3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

SM662GXD-BEST-1

Silicon Motion, Inc.

IC FLASH 1TBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

パッケージ: -

Request a Quote

FLASH

FLASH - NAND (TLC)

1Tbit

eMMC

-

-25°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)