ページ 1564 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F64G08CECCBH1-12Z:C	Micron Technology Inc.	IC FLASH 64GBIT 83MHZ 100VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-VBGA Supplier Device Package: 100-VBGA (12x18)	パッケージ: 100-VBGA	在庫7,488	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-VBGA	100-VBGA (12x18)
IS41LV16105C-50KLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 16MBIT 50NS 42SOJ Memory Type: Volatile Memory Format: DRAM Technology: DRAM - FP Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 42-BSOJ (0.400", 10.16mm) Supplier Device Package: 42-SOJ	パッケージ: 42-BSOJ (0.400", 10.16mm)	在庫5,136	DRAM	DRAM - FP	16Mb (1M x 16)	Parallel	-	-	25ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	42-BSOJ (0.400", 10.16mm)	42-SOJ
CAT28F001L-12B	ON Semiconductor	IC FLASH 1MBIT 120NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 120ns Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-PDIP	パッケージ: 32-DIP (0.600", 15.24mm)	在庫2,064	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	120ns	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	32-DIP (0.600", 15.24mm)	32-PDIP
JS28F512M29EWL0	Micron Technology Inc.	IC FLASH 512MBIT 110NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	パッケージ: 56-TFSOP (0.724", 18.40mm Width)	在庫5,056	FLASH	FLASH - NOR	512Mb (64M x 8, 32M x 16)	Parallel	-	110ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
CY62256NLL-55ZRXET	Cypress Semiconductor Corp	IC SRAM 256KBIT 55NS 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP I	パッケージ: 28-TSSOP (0.465", 11.80mm Width)	在庫3,216	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP I
AT45DB161B-CNC-2.5	Microchip Technology	IC FLASH 16MBIT 15MHZ 8CASON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (528 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 15MHz Write Cycle Time - Word, Page: 14ms Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 8-VDFN Supplier Device Package: 8-CASON (6x8)	パッケージ: 8-VDFN	在庫4,512	FLASH	FLASH	16Mb (528 Bytes x 4096 pages)	SPI	15MHz	14ms	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	8-VDFN	8-CASON (6x8)
AT28C16-20PC	Microchip Technology	IC EEPROM 16KBIT 200NS 24DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 1ms Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 24-DIP (0.600", 15.24mm) Supplier Device Package: 24-PDIP	パッケージ: 24-DIP (0.600", 15.24mm)	在庫8,964	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	1ms	200ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	24-DIP (0.600", 15.24mm)	24-PDIP
MT29F128G08CECABH1-10Z:A TR	Micron Technology Inc.	IC FLASH 128GBIT 100VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-VBGA Supplier Device Package: 100-VBGA (12x18)	パッケージ: 100-VBGA	在庫5,520	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-VBGA	100-VBGA (12x18)
W97BH6KBQX2E	Winbond Electronics	IC SDRAM 2GBIT 400MHZ 168WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-WFBGA (12x12)	パッケージ: 168-WFBGA	在庫5,392	DRAM	SDRAM - Mobile LPDDR2	2Gb (128M x 16)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-25°C ~ 85°C (TC)	Surface Mount	168-WFBGA	168-WFBGA (12x12)
MT29F2G08ABBEAHC-AIT:E TR	Micron Technology Inc.	IC FLASH 2GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,416	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
N25Q512A83G1241F TR	Micron Technology Inc.	IC FLASH 512MBIT 108MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (128M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	パッケージ: 24-TBGA	在庫3,008	FLASH	FLASH - NOR	512Mb (128M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
IS25LQ025B-JKLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 256KBIT 104MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Kb (32K x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	パッケージ: 8-WDFN Exposed Pad	在庫7,904	FLASH	FLASH - NOR	256Kb (32K x 8)	SPI - Quad I/O	104MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
DS28E05P+	Maxim Integrated	IC EEPROM 896BIT 1WIRE 6TSOC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 896b (112 x 8) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 2µs Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-LSOJ (0.148", 3.76mm Width) Supplier Device Package: 6-TSOC	パッケージ: 6-LSOJ (0.148", 3.76mm Width)	在庫18,066	EEPROM	EEPROM	896b (112 x 8)	1-Wire?	-	-	2µs	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	6-LSOJ (0.148", 3.76mm Width)	6-TSOC
IS61C1024AL-12JLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 1MBIT 12NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 32-SOJ	パッケージ: 32-BSOJ (0.300", 7.62mm Width)	在庫23,100	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-BSOJ (0.300", 7.62mm Width)	32-SOJ
S25FL127SABMFI103	Cypress Semiconductor Corp	IC FLASH 128M SPI 108MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.209", 5.30mm Width)	在庫23,760	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
MT53D768M64D8SQ-046 WT ES:E	Micron Technology Inc.	IC DRAM 48G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,696	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
EN-20 64GB I-GRADE	Swissbit	IND BGA PCIE SSD EN-20 (1620) 64 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,080	-	-	-	-	-	-	-	-	-	-	-	-
BY25D80ASSIG-R	BYTe Semiconductor	8 MBIT, 3.0V (2.7V TO 3.6V), -40 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 8Mbit Memory Interface: SPI - Dual I/O Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 2.4ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOP	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	8Mbit	SPI - Dual I/O	108 MHz	2.4ms	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOP
TH58NYG2S3HBAI6	Kioxia America, Inc.	IC FLASH 4GBIT PARALLEL 63BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-BGA Supplier Device Package: 63-BGA (9x11)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (SLC)	4Gbit	Parallel	-	25ns	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	63-BGA	63-BGA (9x11)
CY15V108QN-40LPXIT	Infineon Technologies	IC FRAM 8MBIT SPI 40MHZ 8GQFN Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 8Mbit Memory Interface: SPI Clock Frequency: 40 MHz Write Cycle Time - Word, Page: - Access Time: 9 ns Voltage - Supply: 1.71V ~ 1.89V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UQFN Supplier Device Package: 8-GQFN (3.23x3.28)	パッケージ: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	8Mbit	SPI	40 MHz	-	9 ns	1.71V ~ 1.89V	-40°C ~ 85°C (TA)	Surface Mount	8-UQFN	8-GQFN (3.23x3.28)
W978H2KBVX1I-TR	Winbond Electronics	IC DRAM 256MBIT HSUL 12 134VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4B Memory Size: 256Mbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-VFBGA (10x11.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4B	256Mbit	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-VFBGA (10x11.5)
MT53E512M32D1ZW-046BAIT-B-TR	Micron Technology Inc.	IC DRAM 16GBIT 2.133GHZ 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	16Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
MT58L512Y32DT-10	Micron Technology Inc.	IC SRAM 18MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	パッケージ: -	Request a Quote	SRAM	SRAM - Standard	18Mbit	Parallel	100 MHz	-	5 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
IM1216SDBATG-6I	Intelligent Memory Ltd.	SDRAM, 128MB, 3.3V, 8MX16, 166MH Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 12ns Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: -	Request a Quote	DRAM	SDRAM	128Mbit	LVTTL	166 MHz	12ns	5 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
CY62148DV30LL-70BVIT	Cypress Semiconductor Corp	IC SRAM 4MBIT PARALLEL 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	パッケージ: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	70ns	70 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
CY7C1515KV18-300XCKB	Cypress Semiconductor Corp	QDR SRAM, 2MX36, 0.45NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NM25C040LM8	Fairchild Semiconductor	IC EEPROM 4KBIT SPI 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: SPI Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 15ms Access Time: - Voltage - Supply: 2.7V ~ 4.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: -	Request a Quote	EEPROM	EEPROM	4Kbit	SPI	1 MHz	15ms	-	2.7V ~ 4.5V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CG7765AAT	Infineon Technologies	IC PSOC1 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

MT29F64G08CECCBH1-12Z:C

Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 100VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-VBGA
Supplier Device Package: 100-VBGA (12x18)

パッケージ: 100-VBGA

在庫7,488

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-VBGA

100-VBGA (12x18)

IS41LV16105C-50KLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - FP
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 42-BSOJ (0.400", 10.16mm)
Supplier Device Package: 42-SOJ

パッケージ: 42-BSOJ (0.400", 10.16mm)

在庫5,136

DRAM

DRAM - FP

16Mb (1M x 16)

Parallel

-

25ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

42-BSOJ (0.400", 10.16mm)

42-SOJ

CAT28F001L-12B

ON Semiconductor

IC FLASH 1MBIT 120NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-PDIP

パッケージ: 32-DIP (0.600", 15.24mm)

在庫2,064

FLASH

1Mb (128K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

32-DIP (0.600", 15.24mm)

32-PDIP

JS28F512M29EWL0

Micron Technology Inc.

IC FLASH 512MBIT 110NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8, 32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

パッケージ: 56-TFSOP (0.724", 18.40mm Width)

在庫5,056

FLASH

FLASH - NOR

512Mb (64M x 8, 32M x 16)

Parallel

-

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

CY62256NLL-55ZRXET

Cypress Semiconductor Corp

IC SRAM 256KBIT 55NS 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP I

パッケージ: 28-TSSOP (0.465", 11.80mm Width)

在庫3,216

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP I

AT45DB161B-CNC-2.5

Microchip Technology

IC FLASH 16MBIT 15MHZ 8CASON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (528 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 15MHz
Write Cycle Time - Word, Page: 14ms
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-VDFN
Supplier Device Package: 8-CASON (6x8)

パッケージ: 8-VDFN

在庫4,512

FLASH

16Mb (528 Bytes x 4096 pages)

SPI

15MHz

14ms

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

8-VDFN

8-CASON (6x8)

AT28C16-20PC

Microchip Technology

IC EEPROM 16KBIT 200NS 24DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 1ms
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 24-DIP (0.600", 15.24mm)
Supplier Device Package: 24-PDIP

パッケージ: 24-DIP (0.600", 15.24mm)

在庫8,964

EEPROM

16Kb (2K x 8)

Parallel

-

1ms

200ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

24-DIP (0.600", 15.24mm)

24-PDIP

MT29F128G08CECABH1-10Z:A TR

Micron Technology Inc.

IC FLASH 128GBIT 100VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-VBGA
Supplier Device Package: 100-VBGA (12x18)

パッケージ: 100-VBGA

在庫5,520

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-VBGA

100-VBGA (12x18)

W97BH6KBQX2E

Winbond Electronics

IC SDRAM 2GBIT 400MHZ 168WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)

パッケージ: 168-WFBGA

在庫5,392

DRAM

SDRAM - Mobile LPDDR2

2Gb (128M x 16)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-25°C ~ 85°C (TC)

Surface Mount

168-WFBGA

168-WFBGA (12x12)

MT29F2G08ABBEAHC-AIT:E TR

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,416

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

-

N25Q512A83G1241F TR

Micron Technology Inc.

IC FLASH 512MBIT 108MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (128M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

パッケージ: 24-TBGA

在庫3,008

FLASH

FLASH - NOR

512Mb (128M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

IS25LQ025B-JKLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 256KBIT 104MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

パッケージ: 8-WDFN Exposed Pad

在庫7,904

FLASH

FLASH - NOR

256Kb (32K x 8)

SPI - Quad I/O

104MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

DS28E05P+

Maxim Integrated

IC EEPROM 896BIT 1WIRE 6TSOC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 896b (112 x 8)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 2µs
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-LSOJ (0.148", 3.76mm Width)
Supplier Device Package: 6-TSOC

パッケージ: 6-LSOJ (0.148", 3.76mm Width)

在庫18,066

EEPROM

896b (112 x 8)

1-Wire?

-

2µs

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

6-LSOJ (0.148", 3.76mm Width)

6-TSOC

IS61C1024AL-12JLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ

パッケージ: 32-BSOJ (0.300", 7.62mm Width)

在庫23,100

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

12ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-BSOJ (0.300", 7.62mm Width)

32-SOJ

S25FL127SABMFI103

Cypress Semiconductor Corp

IC FLASH 128M SPI 108MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.209", 5.30mm Width)

在庫23,760

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

MT53D768M64D8SQ-046 WT ES:E

Micron Technology Inc.

IC DRAM 48G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,696

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

EN-20 64GB I-GRADE

Swissbit

IND BGA PCIE SSD EN-20 (1620) 64

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,080

-

BY25D80ASSIG-R

BYTe Semiconductor

8 MBIT, 3.0V (2.7V TO 3.6V), -40

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 8Mbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 2.4ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP

パッケージ: -

Request a Quote

FLASH

FLASH - NOR (SLC)

8Mbit

SPI - Dual I/O

108 MHz

2.4ms

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOP

TH58NYG2S3HBAI6

Kioxia America, Inc.

IC FLASH 4GBIT PARALLEL 63BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-BGA
Supplier Device Package: 63-BGA (9x11)

パッケージ: -

Request a Quote

FLASH

FLASH - NAND (SLC)

4Gbit

Parallel

-

25ns

-

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

63-BGA

63-BGA (9x11)

CY15V108QN-40LPXIT

Infineon Technologies

IC FRAM 8MBIT SPI 40MHZ 8GQFN

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 8Mbit
Memory Interface: SPI
Clock Frequency: 40 MHz
Write Cycle Time - Word, Page: -
Access Time: 9 ns
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Supplier Device Package: 8-GQFN (3.23x3.28)

パッケージ: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

8Mbit

SPI

40 MHz

-

9 ns

1.71V ~ 1.89V

-40°C ~ 85°C (TA)

Surface Mount

8-UQFN

8-GQFN (3.23x3.28)

W978H2KBVX1I-TR

Winbond Electronics

IC DRAM 256MBIT HSUL 12 134VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4B
Memory Size: 256Mbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-VFBGA (10x11.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2-S4B

256Mbit

HSUL_12

533 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-VFBGA (10x11.5)

MT53E512M32D1ZW-046BAIT-B-TR

Micron Technology Inc.

IC DRAM 16GBIT 2.133GHZ 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

16Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

MT58L512Y32DT-10

Micron Technology Inc.

IC SRAM 18MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

パッケージ: -

Request a Quote

SRAM

SRAM - Standard

18Mbit

Parallel

100 MHz

-

5 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

IM1216SDBATG-6I

Intelligent Memory Ltd.

SDRAM, 128MB, 3.3V, 8MX16, 166MH

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: -

Request a Quote

DRAM

SDRAM

128Mbit

LVTTL

166 MHz

12ns

5 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

CY62148DV30LL-70BVIT

Cypress Semiconductor Corp

IC SRAM 4MBIT PARALLEL 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

パッケージ: -

Request a Quote

SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

70ns

70 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

CY7C1515KV18-300XCKB

Cypress Semiconductor Corp

QDR SRAM, 2MX36, 0.45NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

NM25C040LM8

Fairchild Semiconductor

IC EEPROM 4KBIT SPI 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: SPI
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 15ms
Access Time: -
Voltage - Supply: 2.7V ~ 4.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: -

Request a Quote

EEPROM

4Kbit

SPI

1 MHz

15ms

-

2.7V ~ 4.5V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CG7765AAT

Infineon Technologies

IC PSOC1

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-